• Title/Summary/Keyword: Plasma Gas

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The effect of captafol on the hematological value, erythrocyte membrane and plasma biochemical value in vitro (시험관내에서 captafol이 혈액학, 적혈구막 및 혈장생화학치에 미치는 영향)

  • Kim, Sung-hoon;Hwang, Hwa-seon;Cha, Shin-woo;Han, Sang-seop;Roh, Jung-koo
    • Korean Journal of Veterinary Research
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    • v.33 no.3
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    • pp.507-511
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    • 1993
  • The effect of captafol on the hematological value, erythrocyte membrane and plasma biochemical value was investigated using blood of SPF Sprague-Dawley male rats in vitro. For the anticoagulations, we used 0.5mg of heparin per $10m{\ell}$ of blood from vena cava. Three con-centrations($0.1{\times}10^{-4}M$, $1{\times}10^{-3}M$ and $1{\times}10^{-2}M$) captafol in ethanol were added to the each $2.5m{\ell}$ blood so that the linal concentration of ethanol was 1%. The blood contained with each concentration of captafol was incubated at $37^{\circ}C$ C for 2 hours under 5% $CO_2$ gas The whole blood and plasma were examined for hematological vaJues, erythrocyte membrane damage and biochemical values, respectively. The results obtained were summarized as follows ; 1. The number of RBC in $1{\times}10^{-2}M$ group and the concentration of MCHC in $1{\times}10^{-3}M$ group were significantly (p<0.05) decreased and increased from that of control values, respectively. The percentage of Hct was significantly (p<0.05) decreased with dose-response. 2. Erythrocyte fragility rate of $1{\times}10^{-3}M$ and $1{\times}10^{-2}M$ group were significantly (p<0.01) increased from that control with dose response. 3. Potassium ion level of $1{\times}10^{-2}M$ was significantly (p<0.05) increased from that of control. 4. The concentration of total bilirubin in the $1{\times}10^{-3}M$ and $1{\times}10^{-2}M$ groups were significantly increased from that of control. The enzyme level of creatine kinase in $1{\times}10^{-2}M$ group was significanlty (p<0.05) decreased from control value.

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PREPARATION OF AMORPHOUS CARBON NITRIDE FILMS AND DLC FILMS BY SHIELDED ARC ION PLATING AND THEIR TRIBOLOGICAL PROPERTIES

  • Takai, Osamu
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2000.11a
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    • pp.3-4
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    • 2000
  • Many researchers are interested in the synthesis and characterization of carbon nitride and diamond-like carbon (DLq because they show excellent mechanical properties such as low friction and high wear resistance and excellent electrical properties such as controllable electical resistivity and good field electron emission. We have deposited amorphous carbon nitride (a-C:N) thin films and DLC thin films by shielded arc ion plating (SAIP) and evaluated the structural and tribological properties. The application of appropriate negative bias on substrates is effective to increase the film hardness and wear resistance. This paper reports on the deposition and tribological OLC films in relation to the substrate bias voltage (Vs). films are compared with those of the OLC films. A high purity sintered graphite target was mounted on a cathode as a carbon source. Nitrogen or argon was introduced into a deposition chamber through each mass flow controller. After the initiation of an arc plasma at 60 A and 1 Pa, the target surface was heated and evaporated by the plasma. Carbon atoms and clusters evaporated from the target were ionized partially and reacted with activated nitrogen species, and a carbon nitride film was deposited onto a Si (100) substrate when we used nitrogen as a reactant gas. The surface of the growing film also reacted with activated nitrogen species. Carbon macropartic1es (0.1 -100 maicro-m) evaporated from the target at the same time were not ionized and did not react fully with nitrogen species. These macroparticles interfered with the formation of the carbon nitride film. Therefore we set a shielding plate made of stainless steel between the target and the substrate to trap the macropartic1es. This shielding method is very effective to prepare smooth a-CN films. We, therefore, call this method "shielded arc ion plating (SAIP)". For the deposition of DLC films we used argon instead of nitrogen. Films of about 150 nm in thickness were deposited onto Si substrates. Their structures, chemical compositions and chemical bonding states were analyzed by using X-ray diffraction, Raman spectroscopy, X-ray photoelectron spectroscopy and infrared spectroscopy. Hardness of the films was measured with a nanointender interfaced with an atomic force microscope (AFM). A Berkovich-type diamond tip whose radius was less than 100 nm was used for the measurement. A force-displacement curve of each film was measured at a peak load force of 250 maicro-N. Load, hold and unload times for each indentation were 2.5, 0 and 2.5 s, respectively. Hardness of each film was determined from five force-displacement curves. Wear resistance of the films was analyzed as follows. First, each film surface was scanned with the diamond tip at a constant load force of 20 maicro-N. The tip scanning was repeated 30 times in a 1 urn-square region with 512 lines at a scanning rate of 2 um/ s. After this tip-scanning, the film surface was observed in the AFM mode at a constant force of 5 maicro-N with the same Berkovich-type tip. The hardness of a-CN films was less dependent on Vs. The hardness of the film deposited at Vs=O V in a nitrogen plasma was about 10 GPa and almost similar to that of Si. It slightly increased to 12 - 15 GPa when a bias voltage of -100 - -500 V was applied to the substrate with showing its maximum at Vs=-300 V. The film deposited at Vs=O V was least wear resistant which was consistent with its lowest hardness. The biased films became more wear resistant. Particularly the film deposited at Vs=-300 V showed remarkable wear resistance. Its wear depth was too shallow to be measured with AFM. On the other hand, the DLC film, deposited at Vs=-l00 V in an argon plasma, whose hardness was 35 GPa was obviously worn under the same wear test conditions. The a-C:N films show higher wear resistance than DLC films and are useful for wear resistant coatings on various mechanical and electronic parts.nic parts.

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Determination of plasma ketone body following oximation-trimethylsily| derivatization using gas chromatography-mass spectrometry selected ion monitoring (혈장 중 케톤체의 옥심-TMS 유도체화 후 GC-MS/SIM을 이용한 분석)

  • Yoon, Hye-Ran
    • Analytical Science and Technology
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    • v.29 no.1
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    • pp.49-55
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    • 2016
  • A ketone body (acetoacetic acid, β-hydroxybutyric acid, and acetone) increases from blood or urine when bio-energy dependence pays more fatty acid than glucose. However, in case oxidation of fat is greater than the capacity of the citric acid cycle the fatty acid oxidation is made from acetoacetyl CoA to acetoacetate then, again form β-hydroxyburytic acid to acetone, the diffusion take place into the blood. Enzymes that oxidize ketone body in the brain and nerve tissue blood ketone dody is increased during prolonged fasting, brain used it as energy. In this study, we developed the rapid two step derivatization method for sensitive detection of the ketone body by GC-MS/SIM. The plasma was deproteinized and then the hydroxy and carboxyl groups of ketone body are subjected to extraction and drying then, keto-group were derivatized with hydoxylamine at 60℃ for 30 min for oximation. Then it was trimetyl-silylated with BSTFA at 80℃ for 30 min and analyzed using a GC-MS. The linear ranges were in between 0.001 μg/mL and 250 μg/mL for β-hydroxy butyrate, and acetoacetate. The method detection limits were below 0.1 pg over each target compound determined. The mean recoveries (%) of target compounds were ranged from 88.2 % to 92.3 % at 1 µg/mL, from 89.5 % to 94.8 % at 10 μg/mL, with RSD of 6.3-9.4 %. This method could be applied to quantification of ketone bodies which are seen in the keto-acidosis in children and adults from a variety of diseases that cause ketones in the blood and urine.

Determination of Novel Synthetic 5HT2C Agonist KOPC20010 by Gas-Chromatography/Mass Spectrometry and its Bioavailability in Sprague-Dawley Rats

  • Im, Hye-Yeon;Pae, Ae-Nim;Yang, Ha-Yun;Park, Woo-Kyu;Seo, Ji-Eun;Haque, Md. Mamunul;Kwon, Oh-Seung
    • Journal of Pharmaceutical Investigation
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    • v.41 no.1
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    • pp.31-36
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    • 2011
  • $5HT_{2C}$ receptor among fourteen 5-HT subtypes plays important roles in several disorders such as depression, anxiety, epilepsy, schizophrenia and sleep disorders. The purpose of the study is to investigate pharmacokinetic parameters and bioavailability of a newly synthesized selective agonist of $5-HT_{2C}$ receptor, KOPC-20010 (KP10) in rats after intravenous and oral administration for the development of therapeutic anti-obesity agents. KP10 was administered orally (40 mg/kg) or intravenously (20 mg/kg), blood was collected via a catheter, and analyzed by GC/MSD. The calibration curve of KP10 in plasma and urine showed high linearity ($r^2$ >0.999). The retention times of KP10 in plasma and urine were 8.7 and 9.7 min, respectively. After oral administration of 40 mg/kg, pharmacokinetic parameters were calculated as follows; $C_{max}$ value was $1242.9{\pm}1195.5$ ng/mL at $1.1{\pm}0.6$ hr ($T_{max}$). $AUC_{0->24hr}$ and $AUC_{0>{\infty}}$ were $8034.2{\pm}960.7$ and $10464.1{\pm}681.5\;ng{\cdot}hr/mL$, respectively. The terminal half-life was $21.9{\pm}7.6$ hr. $AUC_{0->24hr}$ and $AUC_{0>{\infty}}$ were $4292.4{\pm}523.0$ and $6111.2{\pm}756.2\;ng{\cdot}hr/mL$, respectively, after 20 mg/kg of intravenous administration. The terminal half-life after intravenous administration was $25.1{\pm}9.4$ hr. Bioavailability of KP10 was determined to 86%. The excretion amount into the urine within 48 hr was approximately 4.7 to 6.7% of the dose administered. These data may be beneficial to the anti-obesity drug development of KP10.

Microfabrication of submicron-size hole for potential held emission and near field optical sensor applications (전계방출 및 근접 광센서 응용을 위한 서브 마이크론 aperture의 제작)

  • Lee, J.W.;Park, S.S.;Kim, J.W.;M.Y. Jung;Kim, D.W.
    • Journal of the Korean Vacuum Society
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    • v.9 no.2
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    • pp.99-101
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    • 2000
  • The fabrication of the submicron size hole has been interesting due to the potential application of the near field optical sensor or liquid metal ion source. The 2 micron size dot array was photolithographically patterned. After formation of the V-groove shape by anisotropic KOH etching, dry oxidation at $1000^{\circ}C$ for 600 minutes was followed. In this procedure, the orientation dependent oxide growth was performed to have an etch-mask for dry etching. The reactive ion etching by the inductively coupled plasma (ICP) system was performed in order to etch ~90 nm $SiO_2$ layer at the bottom of the V-groove and to etch the Si at the bottom. The negative ion energy would enhance the anisotropic etching by the $Cl_2$ gas. After etching, the remaining thickness of the oxide on the Si(111) surface was measured to be ~130 nm by scanning electron microscopy. The etched Si aperture can be used for NSOM sensor.

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Optical Properties and Structural Analysis of SiO2 Thick Films Deposited by Plasma Enhanced Chemical Vapor Deposition (PECVD법에 의해 증착된 SiO2 후막의 광학적 성질 및 구조적 분석)

  • Cho, Sung-Min;Kim, Yong-Tak;Seo, Yong-Gon;Yoon, Hyung-Do;Im, Young-Min;Yoon, Dae-Ho
    • Journal of the Korean Ceramic Society
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    • v.39 no.5
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    • pp.479-483
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    • 2002
  • Silicon dioxide thick film using silica optical waveguide cladding was fabricated by Plasma Enhanced Chemical Vapor Deposition(PECVD) method, at a low temperature ($320^{\circ}$C) and from $(SiH_4+N_2O)$ gas mixtures. The effects of deposition parameters on properties of $SiO_2$ thick films were investigated by variation of $N_2O/SiH_4$ flow ratio and RF power. After the deposition process, the samples were annealed in a furnace at $1150^{\circ}$C, in N2 atmosphere, for 2h. As the $N_2O/SiH_4$ flow ratio increased, deposition rate decreased from 9.4 to 2.9 ${\mu}m/h$. As the RF power increased, deposition rate increased from 4.7 to 6.9 ${\mu}m/h$. The thickness and the refractive index measurements were measured by prism coupler. X-ray Photoelectron Spectroscopy(XPS) and Fourier Transform-infrared Spectroscopy(FT-IR) were used to determine the chemical states. The cross-section of films was observed by Scanning Electron Microscopy(SEM).

Hydrogen Isotope Exchange Reaction in Electrical Discharge through D2/H2O System (전기방전하에서 D2/H2O 반응계의 수소 동위원소 교환반응)

  • Kim, H.J.;Park, Y.D.;Lee, W.M.
    • Transactions of the Korean hydrogen and new energy society
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    • v.9 no.2
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    • pp.77-84
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    • 1998
  • Hydrogen isotope exchange in mixtures of $H_2O/D_2$, $H_2O/D_2O$, or $D_2O/H_2$ can be facilitated under electrical discharge. For example, a simple DC corona discharge through the mixture creates a plasma in which the reactants are excited energetically. The reactants in such plasma, due to increase in population of excited quantum levels or due to production of radicals or ions, undergo very rapid chemical reactions even at ambient temperature. The isotope exchange reaction of hydrogen(H) and deuterium(D) produces the third kind of heavy water(HDO) and isotopic hydrogen gas(HD), as shown in $D_2+H_2O{\rightarrow}HD$ K=11.257(at $25^{\circ}C$) The reaction products can be detected with temporal resolution using the Fourier transform infrared(FTIR) absorption spectroscopy. Since $H_2O$, $D_2O$ and HDO are all infrared active with different absorption peaks, FTIR proves to be a useful tool for monitoring the reaction. Experimental results show that the electrical method is indeed a useful means to promote the reaction, showing a better efficiency than traditional catalytic methods.

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Growth of Hexagonal Boron Nitride Thin Films on Silicon Using a Single Source Precursors

  • Boo, Jin-Hyo;Lee, Soon-Bo;Casten Rohr;Wilson Ho
    • Proceedings of the Korean Vacuum Society Conference
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    • 1998.02a
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    • pp.120-120
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    • 1998
  • Boron nitride (BN) films have attracted a growing interest for a variety of t technological applications due to their excellent characteristics, namely hardness, c chemical inertness, and dielectrical behavior, etc. There are two crystalline phases 1551; of BN that are analogous to phases of carbon. Hexagonal boron nitride (h-BN) has a a layered s$\sigma$ucture which is spz-bonded structure similar to that of graphite, and is t the stable ordered phase at ambient conditions. Cubic boron nitride (c-BN) has a z zinc blende structure with sp3-bonding like as diamond, 따ld is the metastable phase a at ambient conditions. Among of their prototypes, especially 삼Ie c-BN is an i interesting material because it has almost the same hardness and thermal c conductivity as di없nond. C Conventionally, significant progress has been made in the experimental t techniques for synthesizing BN films using various of the physical vapor deposition 밍ld chemical vapor deposition. But, the major disadvantage of c-BN films is that t they are much more difficult to synthesize than h-BN films due to its narrow s stability phase region, high compression stress, and problem of nitrogen source c control. Recent studies of the metalorganic chemical vapor deposition (MOCVD) of I III - V compound have established that a molecular level understanding of the d deposition process is mandatory in controlling the selectivity parameters. This led t to the concept of using a single source organometallic precursor, having the c constituent elements in stoichiometric ratio, for MOCVD growth of 삼Ie required b binary compound. I In this study, therefore, we have been carried out the growth of h-BN thin f films on silicon substrates using a single source precursors. Polycrystalline h-BN t thin films were deposited on silicon in the temperature range of $\alpha$)() - 900 $^{\circ}$C from t the organometallic precursors of Boron-Triethylamine complex, (CZHs)3N:BRJ, and T Tris(dimethylamino)Borane, [CH3}zNhB, by supersonic molecular jet and remote p plasma assisted MOCVD. Hydrogen was used as carrier gas, and additional nitrogen w was supplied by either aDlIDonia through a nozzle, or nitrogen via a remote plasma. T The as-grown films were characterized by Fourier transform infrared spectroscopy, x x-ray pthotoelectron spectroscopy, Auger electron spectroscopy, x-ray diffraction, t transmission electron diffraction, optical transmission, and atomic force microscopy.roscopy.

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Characteristics of Diamond Like Carbon Film Fabricated by Plasma Enhanced Chemical Vapor Deposition Method with mixed Ar, N2 gas rate (혼합된 Ar, N2 가스 유량에 따른 PECVD 방법에 의하여 제작된 다이아몬드 상 탄소 박막의 특성)

  • Gang, Seong-Ho;Kim, Byeong-Jin;Bae, Gyeong-Tae;Ju, Seong-Hu
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2018.06a
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    • pp.87-87
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    • 2018
  • 다이아몬드 상 탄소(diamond-like carbon, DLC)는 상당량의 $sp^3$ 결합을 가지는 비정질 탄소(a-C) 또는 수소화 비정질 탄소(a-C:H)로 이루어진 준안정 형태의 탄소이다. DLC는 전기 저항과 굴절률이 높고 화학적으로 다른 물질과 반응하지 않으며, 마찰계수가 낮고 경도가 높아 자기 디스크, 광학 소자 등의 다양한 분야에서 적용되고 있다[1,2]. 또한 다이아몬드에 비해 상온에서 성장이 가능할 정도로 합성온도가 낮아 적용 기판의 제한이 거의 없고, 증착 방법과 조건에 따라 탄소 결합의 다양성과 비정질성이 변화하기 때문에 넓은 범위의 특성을 얻을 수 있는 장점이 있다. 지금까지 DLC 박막의 광학적 특성, 특히 굴절률, 광학적인 에너지 밴드 갭, 자외선과 적외선 투과성에 대해서는 많은 연구가 진행되었으나 가시광선의 투과성에 대한 연구는 제한적이며[4], 가시광선 투과도 개선에 대한 연구는 전무하다. 본 연구에서는 ITO 기판 위에 DLC를 합성하고 기계적 특성과 가시광선 영역 투과도를 조사하였다. RF-PECVD(radio frequency plasma enhanced chemical vapor deposition) 방법에 의해서 $C_2H_2+Ar$ 혼합 가스 비율과 $C_2H_2+N_2$ 혼합 가스 비율을 변화시켜 ITO 기판 위에 DLC 박막을 합성하였다. 공정 압력과 rf-power, 증착시간, 기판온도는 0.2 torr, 40 W, 5 분, $50^{\circ}C$로 고정하고, 공정 가스는 $C_2H_2+Ar$$C_2H_2+N_2$가 200 sccm이 되도록 비율을 변화하였다. $C_2H_2:Ar$$C_2H_2:N_2$의 비율은 180 : 20, 160 : 40, 140 : 60, 120 : 80, 100 : 100이 되도록 가스의 유량을 조절하였다. 투과도는 가시광선(380 ~ 780 nm) 범위에서 측정하였고 두께와 표면조도는 AFM으로 측정하였다. 투과도는 $C_2H_2+Ar$의 Ar 가스 비율이 증가할수록 증가해 140 : 60일 때 최댓값을 나타낸 후 다시 감소하였다. $C_2H_2+N_2$ 투과도는 $N_2$ 가스 비율이 증가할수록 감소하는 경향을 나타내었다. 표면 거칠기는 $C_2H_2+Ar$ 혼합 가스를 사용한 경우의 Ar의 가스 비율이 증가할수록 증가하였다. 그러나 $C_2H_2+N_2$ 혼합 가스를 사용한 경우에는 $N_2$ 가스의 혼합 비율이 증가할수록 감소하였다.

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Cacao bean husk: an applicable bedding material in dairy free-stall barns

  • Yajima, Akira;Owada, Hisashi;Kobayashi, Suguru;Komatsu, Natsumi;Takehara, Kazuaki;Ito, Maria;Matsuda, Kazuhide;Sato, Kan;Itabashi, Hisao;Sugimura, Satoshi;Kanda, Shuhei
    • Asian-Australasian Journal of Animal Sciences
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    • v.30 no.7
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    • pp.1048-1053
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    • 2017
  • Objective: The objectives of the study were to assess the effect of cacao bean husk as bedding material in free-stall barn on the behavior, productivity, and udder health of dairy cattle, and on the ammonia concentrations in the barn. Methods: Four different stall surfaces (no bedding, cacao bean husk, sawdust, and chopped wheat straw) were each continuously tested for a period of 1 week to determine their effects on nine lactating Holstein cows housed in the free-stall barn with rubber matting. The lying time and the milk yield were measured between d 4 and d 7. Blood samples for plasma cortisol concentration and teat swabs for bacterial counts were obtained prior to morning milking on d 7. The time-averaged gas-phase ammonia concentrations in the barn were measured between d 2 and d 7. Results: The cows spent approximately 2 h more per day lying in the stalls when bedding was available than without bedding. The milk yield increased in the experimental periods when cows had access to bedding materials as compared to the period without bedding. The lying time was positively correlated with the milk yield. Bacterial counts on the teat ends recorded for cows housed on cacao bean husk were significantly lower than those recorded for cows housed without bedding. Ammonia concentration under cacao bean husk bedding decreased by 6%, 15%, and 21% as compared to no bedding, sawdust, and chopped wheat straw, respectively. The cortisol concentration was lowest in the period when cacao bean husk bedding was used. We observed a positive correlation between the ammonia concentrations in the barn and the plasma cortisol concentrations. Conclusion: Cacao bean husk is a potential alternative of conventional bedding material, such as sawdust or chopped wheat straw, with beneficial effects on udder health and ammonia concentrations in the barns.