• Journal of the Korean Ceramic Society
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• v.51 no.3
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• pp.201-207
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• 2014

High-purity aluminum nitride nanopowders were synthesized using an RF induction thermal plasma instrument. Ammonia and nitrogen gases were used as sheath gas to control the reactor atmosphere. Synthesized AlN nanopowders were characterized by XRD, SEM, TEM, EDS, BET, FTIR, and N-O analyses. It was possible to synthesize high-purity AlN nanoparticles through control of the ammonia gas flow rate. However, additional process parameters such as plasma power and reactor pressure had to be controlled for the production of high-purity AlN nanopowders using nitrogen gas.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.12S
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• pp.1248-1254
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• 2003

Carbon nanotubes(CNTs) are grown by using Co catalyst metal. CNTs fabricated by PECVD(plasma enhanced chemical vapor deposition) method are studied in terms of surface reaction and surface structure by TEM and Raman analysing method and ate analysed in its electrical field emission characteristics with variation of space between anode and cathode. Acetylene(C$_2$H$_2$) gas is used as the carbon source, while ammonia and hydrogen gas are used as catalyst and dilution gas. The CNTs grown by hydrogen(H$_2$) gas plasma indicates better vortical alignment, lower temperature process, and longer tip, compared to that grown by ammonia(NH$_3$) gas plasma. The CNTs fabricated with Co(cobalt) catalyst metal and PECVD method show the multiwall structure in mid-circle type in tip-end and the inner vacancy of 10nm. Emission properties of CNTs indicate the turn-on field to be 2.6 V/${\mu}{\textrm}{m}$ We suggest that CNTs can be possibly applied to the emitter tip of FEDs and high brightness flat lamp because of low temperature CNTs growth, low turn-on field.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.71-75
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• 2003

Carbon nanotubes(CNTs) are grown by using Co catalyst metal. CNTs fabricated by PECVD(plasma enhanced chemical vapor deposition) method are studied in terms of surface reaction and surface structure by TEM and Raman analysing method and are analysed in its electrical field emission characteristics with variation of space between anode and cathode. Acetylene($C_2H_2$) gas is used as the carbon source, while ammonia and hydrogen gas are used as catalyst and dilution gas. The CNTs grown by hydrogen($H_2$) gas plasma indicates better vertical alignment, lower temperature process and longer tip, compared to that grown by ammonia($NH_3$) gas plasma. The CNTs fabricated with Co(cobalt) catalyst metal and PECVD method show the multiwall structure in mid-circle type in tip-end and the inner vacancy of 10nm. Emission properties of CNTs indicate the turn-on field to be $2.6\;V/{\mu}m$. We suggest that CNTs can be possibly applied to the emitter tip of FEDs and high brightness flat lamp because of low temperature CNTs growth, low turn-on field.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.213-213
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• 2010

Magnetic random access memory (MRAM), based on magnetic tunnel junction (MTJ) and CMOS, is one of the best semiconductor memories because it can provide nonvolatility, fast access time, unlimited read/write endurance, low operating voltage and high storage density. For the realization of high density MRAM, the etching of MTJ stack with good properties is one of a key process. Recently, there has been great interest in the MTJ stack using MgO as barrier layer for its huge room temperature MR ratio. The use of MgO barrier layer will undoubtedly accelerate the development of MTJ stack for MRAM. In this study, high-density plasma reactive ion etching of MgO films was investigated in an inductively coupled plasma of $Cl_2$/Ar gas mixes. The etch rate, etch selectivity and etch profile of this magnetic film were examined on vary gas concentration. As the $Cl_2$ gas concentration increased, the etch rate of MgO monotonously decreased and etch slop was slanted. The effective of etch parameters including coil rf power, dc-bais voltage, and gas pressure on the etch profile of MgO thin film was explored, At high coil rf power, high dc-bais voltage, low gas pressure, the etching of MgO displayed better etch profiles. Finally, the clean and vertical etch sidewall of MgO films was achieved using $Cl_2$/Ar plasma at the optimized etch conditions.

• Journal of the Korean institute of surface engineering
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• v.26 no.4
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• pp.192-202
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• 1993

The characteristics of the high-performance ceramic coatings fabricated on the optimum processings con-ditions for the atmospheric plasma spraying are evaluated by various material tests and analyses. The opti-mum processing parameters for the plasma spraying are determined by using the two-level orthogonal arrays of fractional factorial testing method as a statistical approach. Material tests for the coating specimens are carried out to evaluate microstructure, hardness, adhesion strength, and deposition efficiency. The properties of Al2O3-13%TiO2 coating are discussed with regard to the effective processings parameters. The decarburization effects of WC-12%Co coating is examined by XRD analysis in terms of the arc power and the secondary gas species. The hardness of Al2O2-13%TiO2 coating is increased with the arc power and shows the maximum value at around 40 lpm of Ar gas flowrate, which appears to be the most critical parame-ter on the deposition efficiency. For reducing the decarburization of WC-12%Co coating, the injection of inert He gas instead of reactive H2 gas as a secondary gas is more effective than the dropping of arc power to lessen the plasma enthalpy.

• 한국전기화학회:학술대회논문집
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• 2005.07a
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• pp.173-176
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• 2005

• 한국정보디스플레이학회:학술대회논문집
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• 2002.08a
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• pp.586-589
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• 2002

The Ultra Violet(UV) emission characteristics of Neon + Nitrogen gas-mixture discharge was investigated in AC plasma display panel. The firing voltage of Ne+$N_2$ gas-mixture discharge increased with increasing nitrogen concentration. The UV intensity emitted from the gas discharge also increased with increasing nitrogen concentration. The UV efficiency increase with increasing $N_2$ partial pressure at low $N_2$ concentration, and then UV efficiency is saturated at high $N_2$ concentration.

• Proceedings of the KIEE Conference
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• 1997.07e
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• pp.1666-1668
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• 1997

This paper reports the optimal gas mixing ratio for color plasma display panel to improve luminous efficiency using gas dischage simulation which contains energy equation. We verified a simulation by measuring vacuum ultraviolet. The luminous efficiency has improved considerably(about 30%) by adding Ar (0.5%), compared with Ne-Xe(4%) mixing gas.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.744-747
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• 2009

Plasma Display Panels (PDPs) have illustrated impressive results in terms of light emission efficiency of the Ne-Xe mixture compared with the He-Xe mixture. However, He-Xe has shown to achieve superior color purity. This paper presents the optimization of excitation efficiency and color purity for He-Ne-Xe ternary gas mixtures. Furthermore, we investigate the effect that a protective dielectric layer has on UV photon efficiency in a matrix known as electrode type PDP.

• Applied Science and Convergence Technology
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• v.26 no.6
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• pp.184-188
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• 2017

Polymer deposition pattern on the ceramic lid surface is analyzed by numerical modeling. Assumption was made that is affected by gas flow pattern from the horizontal and vertical nozzles, temperature profile from the finger-like branches made of graphite and electrostatic potential effect. Calculated results showed gas flow dynamics is less relevant than two others. Temperature and electrostatic effects are likely determining the polymer deposition pattern based on our numerical simulation results.