• 한국표면공학회지
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• 제29권6호
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• pp.648-653
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• 1996

Hydrogenated amorphous carbon(a-C:H) films are prepared by rf plasma CVD in a $CH_4$ source gas system diluted with Ar of $H_2$. The spectra of emissive and reactive species in the plasma are detected using in stiu optical emission spectroscopy. Inaddition, the relationship between the film properties which can be varied by the deposition parameters and the Raman spectra is studied. In the $CH_4/H_2$ gas system, the emission intensities of CH and $H \tau$ decrease and those of $H \alpha$, $H \beta$, $C_2$ and Ar increase with increasing $H_2$ concentration, The formation of $C_2$ and CH in the $CH_4/Ar/H_2$ gas system is greatly suppressed by hydrogen addition and the excess of hydrogen addition is found to form graphite structure. The $C_2$ formation in the gas phase enhances a-C:H film formation.

• 한국전기전자재료학회논문지
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• 제11권10호
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• pp.804-808
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• 1998

The inductively coupled plasma(ICP) etching of platinum with BCl$_3$/Cl$_2$ gas chemistry has been studied. X-ray photoelectron spectroscopy (XPS) was used to investigate the chemical binding states of the etched surface. The plasma characteristics was extracted from optical emission spectroscopy (OES) and a single Langmuir probe. In this case of Pt etching using BCl$_3$/Cl$_2$ gas chemistries, the result of OES and Langmuir probe showed the increase of Cl radicals and ion current densities in the plasmas with increasing Cl$_2$ gas ratio. At the same time, XPS results indicated that the intensities of Pt 4f decreased with increasing Cl$_2$ gas ratio. The decrease of Pt 4f intensities implies the increase of residue layer thickness on the etched Pt surface.

• Journal of Electrical Engineering and Technology
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• 제13권1호
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• pp.345-351
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• 2018

This paper analyzes a resonant inverter to generate plasma. The resonant inverter consists of a full bridge converter, resonant network and reactor to generate a magnetic field for plasma generation. A plasma load has very distinct characteristics compared to conventional loads. The characteristics of plasma load are analyzed through experimental results. This paper presents the study on the resonant network, which was performed in order to determine how to achieve a constant current gain. Another important contribution of this study is the analysis of drop-out phenomenon observed in plasma loads which is responsible for unpredictable shutdown of the plasma generator that requires stable operation. In addition, the design process for the resonant network of a plasma generator is proposed. The validity of this study is verified through simulations and experimental results.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.178.2-178.2
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• 2013

Conventional ultraviolets A,B,C are known to be very important factor of killing, changing surface properties of biological cells and materials. It is of great importance to investigate the influence of extreme ultraviolet (EUV) exposure on the biological cell. Here we have studied high density EUV plasma and its emission characteristics, which have been generated by plasma focus device with hypercycloidal pinch (HCP) electrode under various Ar gas pressures ranged from 30~500 mTorr in this experiment. We have also measured the plasma characteristics generated from the HCP plasma focus device such as electron temperature by the Boltzman plot, plasma density by the Stark broading method, discharge images by open-shuttered pin hole camera, and EUV emission signals by using the photodiode AXUV-100 Zr/C.

• Elastomers and Composites
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• 제35권4호
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• pp.296-302
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• 2000

신발 중창용 EVA 발포체의 수용성 폴리우레탄계 접착제에 대한 접착력을 증가시키기 위하여 발포체 표면을 저온 플라즈마 처리하였다. 플라즈마 처리기체 종류, 플라즈마 처리시간, 전극과 시료와의 거리등의 조건에 따른 발포체의 표면형태, 접촉각 및 수성폴리우레탄에 대한 접착력 등을 주사전자현미경, 접촉각 측정기, 인장강도시험기 등을 사용하여 측정하였다. 플라즈마 처리시간이 증가함에 따라 플라즈마 에칭에 의한 표면 형태의 변화가 더욱 뚜렷하게 나타났으며, 물로 측정한 발포체의 표면 접촉각은 현저히 감소하였다. 플라즈마 처리시간이 증가함에 따라 접착력은 현저히 증가하였다.

• 공업화학
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• 제22권1호
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• pp.31-36
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• 2011

사불화탄소($CF_4$)는 반도체 제조공정에서 플라즈마 에칭과 화학기상증착(CVD)에서 사용되어온 가스이다. $CF_4$는 적외선을 강하게 흡수하고 대기 중 잔류시간이 길어서 지구온난화에 영향을 미치기 때문에 고효율의 분해가 필요하다. 본 연구에서는 플라즈마와 워터젯을 결합하여 방전영역을 증가시키고 다량의 OH 라디칼을 생성시켜 $CF_4$를 고효율로 분해할 수 있는 워터젯 글라이딩 아크 플라즈마 시스템을 개발하였다. 실험 변수로 전극 형태, 전극 각도, 가스 노즐직경, 전극 간격과 전극 길이를 취하였다. 변수실험을 통하여 Arc 형태의 전극에서 전극 각도가 $20^{\circ}$, 가스 노즐 직경이 3 mm, 전극 간격이 3 mm, 전극 길이가 120 mm일 때 $CF_4$ 분해율은 최고 93.4%까지 도달하였다.

• 반도체디스플레이기술학회지
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• 제22권2호
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• pp.35-39
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• 2023

Silicon oxide thin films have been deposited by plasma-enhanced chemical vapor deposition in SiH4 and N2O plasma along the variation of the gas flow ratio. Optical emission spectroscopy was employed to monitor the plasma and ellipsometry was employed to obtain refractive index of the deposited thin film. The atomic ratio of Si, O, and N in the film was obtained using XPS depth profiling. Fourier Transform Infrared Spectroscopy was used to analyze structures of the films. RI decreased with the increase in N2O/SiH4 gas flow ratio. We noticed the increase in the Si-O-Si bond angles as the N2O/SiH4 gas flow ratio increased, according to the analysis of the Si-O-Si stretching peak between 950 and 1,150 cm-1 in the wavenumber. We observed a correlation between the optical emission intensity ratio of (ISi+ISiH)/IO. The OES intensity ratio is also related with the measured refractive index and chemical composition ratio of the deposited thin film. Therefore, we report the added value of OES data analysis from the plasma related to the thin film characteristics in the PECVD process.

• 한국가스학회지
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• 제26권5호
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• pp.35-40
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• 2022

태양광 전지 제조 설비인 PCVD(Plasma Chemical Vapor Deposition)는 NH₃, SIH₄, O₂를 Chamber에 주입하여 생성된 Plasma를 Wafer에 증착시키는 설비이다. PCVD설비에서 Gas 이동과 주입이 Gas Cabinet에서 이루어지며, 내부에는 MFC, Regulator, Valve, Pipe 등이 복잡하게 연결되어 많은 누출 점이 존재한다. 폭발 상한값(UEL) 33.6%, 폭발 하한값(LEL) 15%의 NH₃ 누출 시 폭발을 예방하기 위해서는 NH₃ 농도가 폭발 범위에서 벗어날 수 있는 희석능력이 있어야 한다. 본 연구는 기존 PCVD의 Gas Cabinet에 대한 NH₃ Gas 누출 시 희석능력을 3D와 수치로 확인할 수 있는 CFD 분석 기법을 활용하여 분석하였다. 그 결과 중희석에 해당되며 설비 개선을 통해 고환기가 가능하다는 결론을 얻었다.

• 한국환경과학회지
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• 제20권7호
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• pp.907-917
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• 2011

This study investigated the application of experimental design methodology to optimization of conditions of air-plasma and oxygen-plasma oxidation of N, N-Dimethyl-4-nitrosoaniline (RNO). The reactions of RNO degradation were described as a function of the parameters of voltage ($X_1$), gas flow rate ($X_2$) and initial RNO concentration ($X_3$) and modeled by the use of the central composite design. In pre-test, RNO degradation of the oxygen-plasma was higher than that of the air-plasma though low voltage and gas flow rate. The application of response surface methodology (RSM) yielded the following regression equation, which is an empirical relationship between the RNO removal efficiency and test variables in a coded unit: RNO removal efficiency (%) = $86.06\;+\;5.00X_1\;+\;14.19X_2\;-\;8.08X_3\;+\;3.63X_1X_2\;-\;7.66X_2^2$ (air-plasma); RNO removal efficiency (%) = $88.06\;+\;4.18X_1\;+\;2.25X_2\;-\;4.91X_3\;+\;2.35X_1X_3\;+\;2.66X_1^2\;+\;1.72X_3^2$ (oxygen-plasma). In analysis of the main effect, air flow rate and initial RNO concentration were most important factor on RNO degradation in air-plasma and oxygen-plasma, respectively. Optimized conditions under specified range were obtained for the highest desirability at voltage 152.37 V, 135.49 V voltage and 5.79 L/min, 2.82 L/min gas flow rate and 25.65 mg/L, 34.94 mg/L initial RNO concentration for air-plasma and oxygen-plasma, respectively.

• 대한화학회지
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• 제30권3호
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• pp.327-332
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• 1986

유도결합 플라스마 공간내의 전자밀도를 측정하였다. 전자밀도의 측정시 유도결합 플라스마의 작동조건은, (1) 냉각기체만 사용할 때, (2) 냉각기체와 운반기체만을 사용할 때, (3) 보통의 작동조건은, 즉 에아로졸을 포함한 운반기체를 사용할 때, (4) 약 88%의 에아로졸을 제거시켰을 때, 그리고 (5) 과량의 리튬을 주입시켰을 때로서 분류하였다. 보통의 작동조건에서 플라스마의 낮은 부분에서는 전자밀도가 상당히 감소하여 플라스마내의 가장 전자밀도가 큰 곳보다 약 80배 감소하였다. 이온화 방해영향을 일으키는 알칼리금속을 과량으로 넣었을 때 전자밀도의 변화는 관찰되지 않았고 유도코일의 power를 증가시키면 전자밀도도 증가하였다.