• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.257-257
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• 2010

One of the critical issues for applications of flexible organic thin film transistors (OTFTs) for flexible electronic systems is the electrical stabilities of the OTFT devices, including variation of the current on/off ratio ($I_{on}/I_{off}$), leakage current, threshold voltage, and hysteresis, under repetitive mechanical deformation. In particular, repetitive mechanical deformation accelerates the degradation of device performance at the ambient environment. In this work, electrical stabilities of the pentacene organic thin film transistors (OTFTs) employing multi-stack hybrid encapsulation layers were investigated under mechanical cyclic bending. Flexible bottom-gated pentacene-based OTFTs fabricated on flexible polyimide substrate with poly-4-vinyl phenol (PVP) dielectric as a gate dielectric were encapsulated by the plasma-deposited organic layer and atomic layer deposited inorganic layer. For cyclic bending experiment of flexible OTFTs, the devices were cyclically bent up to $10^5$ times with 5mm bending radius. In the most of the devices after $10^5$ times of bending cycles, the off-current of the OTFT with no encapsulation layers was quickly increased due to increases in the conductivity of the pentacene caused by doping effects from $O_2$ and $H_2O$ in the atmosphere, which leads to decrease in the $I_{on}/I_{off}$ and increase in the hysteresis. With encapsulation layers, however, the electrical stabilities of the OTFTs were improved significantly. In particular, the OTFTs with multi-stack hybrid encapsulation layer showed the best electrical stabilities up to the bending cycles of $10^5$ times compared to the devices with single organic encapsulation layer. Changes in electrical properties of cyclically bent OTFTs with encapsulation layers will be discussed in detail.

• Korean Journal of Materials Research
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• v.22 no.2
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• pp.61-65
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• 2012

A $Li_2O-2SiO_2$ ($LS_2$) glass was investigated as a lithium-ion conducting oxide glass, which is applicable to a fast ionic conductor even at low temperature due to its high mechanical strength and chemical stability. The $Li_2O-2SiO_2$ glass is likely to be broken into small pieces when quenched; thus, it is difficult to fabricate a specifically sized sample. The production of properly sized glass samples is necessary for device applications. In this study, we applied spark plasma sintering (SPS) to fabricate $LS_2$ glass samples which have a particular size as well as high transparency. The sintered samples, $15mm\phi{\times}2mmT$ in size, ($LS_2$-s) were produced by SPS between $480^{\circ}C$ and $500^{\circ}C$ at 45MPa for 3~5mim, after which the thermal and dielectric properties of the $LS_2$-s samples were compared with those of quenched glass ($LS_2$-q) samples. Thermal behavior, crystalline structure, and electrical conductivity of both samples were analyzed by differential scanning calorimetry (DSC), X-ray diffraction (XRD) and an impedance/gain-phase analyzer, respectively. The results showed that the $LS_2$-s had an amorphous structure, like the $LS_2$-q sample, and that both samples took on the lithium disilicate structure after the heat treatment at $800^{\circ}C$. We observed similar dielectric peaks in both of the samples between room temperature and $700^{\circ}C$. The DC activation energies of the $LS_2$-q and $LS_2$-s samples were $0.48{\pm}0.05eV$ and $0.66{\pm}0.04eV$, while the AC activation energies were $0.48{\pm}0.05eV$ and $0.68{\pm}0.04eV$, respectively.

• Korean Chemical Engineering Research
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• v.49 no.6
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• pp.710-714
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• 2011

In present work, $La_{0.8}Ca_{0.2}CrO_{3}$(LCC), $La_{0.8}Sr_{0.2}CrO_{3}$(LSC) and $La_{0.8}Ca_{0.2}CrO_{0.9}Co_{0.1}O_{3}$(LCCC) ceramic interconnect layer for SOFC were prepared by using thermal plasma spray coating process. The LCC, LSC and LCCC powders were characterized by x-ray diffraction(XRD), scanning electron microscopy(SEM), particle counter and BET analysis. In addition, basic and essential properties such as the surface morphology, cross section, gas leak rate, and electrical conductivity of LCC, LSC, and LCCC layers coated by thermal plasma spray coating process were analyzed and discussed. Based on these experimental results, it can be concluded that the LCCC layer coated by thermal plasma spray coating process can be suitable as a ceramic interconnect of SOFC.

• Electrical & Electronic Materials
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• v.10 no.2
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• pp.141-149
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• 1997

L $a_{0.7}$S $r_{0.3}$Mn $O_{3}$ powders were prepared by both GNP(Glycine-Nitrate Process) and solid state reaction method in various of calcination temperature(800-1000.deg. C) and time in air. Also, L $a_{0.7}$S $r_{0.3}$Mn $O_{3}$ cathode contacts on YSZ(Yttria-Stabilized Zirconia) substrate were prepared by screen printing and sintering method as a function of sintering temperature(1100-1450.deg. C) in air. Sintering behaviors have been investigated by SEM(Scanning Electron Microscope) and porosity measurement. Compositional and structural characterization were carried out by X-ray diffractometer and ICP AES(Inductively Coupled Plasma-Atomic Emission Spectrometry) analysis. Electrical characterization was carried out by the electrical conductivity with linear 4 point probe method. As the calcination period increased in solid state reaction method, L $a_{0.7}$S $r_{0.3}$Mn $O_{3}$ phase increased. Although L $a_{0.7}$S $r_{0.3}$Mn $O_{3}$ single phase was obtained only for 48hrs at 1000.deg. C, in GNP method it was easy to get single and ultra-fine L $a_{0.7}$S $r_{0.3}$Mn $O_{3}$ powders with submicron particle size at 650.deg. C for 30min. The particle size and thickness of L $a_{0.7}$S $r_{0.3}$Mn $O_{3}$ cathode contact by solid state reaction method did not change during the heat treatment, while those by GNP method showed good sintering characteristics because initial powder size fabricated from GNP method is smaller than that fabricated from solid state reaction method. Based on enthalpy change from thermodynamic data and ICP-AES analysis, it was suggested to make cathode contact in composition of (L $a_{0.7}$S $r_{0.3}$)$_{0.91}$ Mn $O_{3}$ which have little second phase (L $a_{2}$Z $r_{2}$ $O_{7}$) for high efficient solid oxide fuel cells applications. As (L $a_{0.7}$S $r_{0.3}$)$_{0.91}$Mn $O_{3}$ cathode contact on YSZ substrate was sintering at 1250.deg. C the temperature that liquid phase sintering did not occur. It was possible to obtain proper cathode contacts with electrical conductivity of 150(S/cm) and porosity content of 30-40%.m) and porosity content of 30-40%.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.63 no.2
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• pp.250-256
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• 2014

In this study, we deposited and investigated ${\mu}c$-Si:H thin films prepared by Plasma Enhanced Chemical Vapor Deposition(PECVD) system. To deposition silicon thin films, we controlled $SiH_4$ gas concentration, RF input power, and heater temperature. According to the experiments, the more $SiH_4$ gas concentration increased, deposition rate also increased but crystalline property decreased at the same conditions. In the RF input power case, deposition rate and crystalline property increased together when the input power increased from 100[W] to 300[W]. If RF input power was 300[W], deposition rate has reached saturation point. In the heater temperature, deposition rate increased when heater temperature increased. Crystalline property maintained a certain level until heater temperature was $250[^{\circ}C]$. And then it was a suddenly increased. Multistep method has been proposed to improve the quality of ${\mu}c$-Si:H thin film. $SiH_4$ gas was injected with a time interval. According to the experiments, crystallite ratio improve about 20~60[%] and photo conductivity increased up to six times.

• Journal of Powder Materials
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• v.17 no.4
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• pp.319-325
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• 2010

Electrical discharge machining (EDM) is an attractive machining technique but it requires electrically conductive ceramic materials. In this study, Alumina matrix composites reinforced with CNTs were fabricated through CNT purification, mixing, compaction and spark plasma sintering (SPS) processes. $Al_2O_3$ nanocomposites with the different CNT concentrations were synthesized. The mechanical and electrical characteristics of $Al_2O_3$/CNTs composites were examined in order to apply the materials to the EDM process. In addition, micro-EDM using wire electrical discharge grinding (WEDG) was conducted under the various EDM parameters to investigate the machining characteristics of machined hole by Field Emission Scanning Electron Microscope (FE-SEM). The results show that $Al_2O_3$/CNTs 10%Vol. was more suitable than the other materials because high conductivity and large discharge energy caused violent sparks resulting in bad machining accuracy and surface quality.

• Journal of the Semiconductor & Display Technology
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• v.17 no.4
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• pp.66-69
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• 2018

This study was researched the electrical properties of semiconductor devices such as ITO, $SiO_2$, $V_2O_5$ thin films. The films of ITO, $SiO_2$, $V_2O_5$ were deposited by the rf magnetron sputtering system with mixed gases of oxygen and argon to generate the plasma. All samples were cleaned before deposition and prepared the metal electrodes to research the current-voltage properties. The electrical characteristics of semiconductors depends on the interface's properties at the junction. There are two kinds of junctions such as ohmic and schottky contacts in the semiconductors. In this study, the ITO thin film was shown the ohmic contact properties as the linear current-voltage curves, and the electrical characteristics of $SiO_2$ and $V_2O_5$ films were shown the non-linear current-voltage curves as the schottky contacts. It was confirmed that the electronic system with schottky contacts enhanced the electronic flow owing to the increment of efficiency and increased the conductivity. The schottky contact was only defined special characteristics at the semiconductor and the interface depletion layer at the junction made the schottky contact which has the effect of leakage current cutoff. Consequently the semiconductor device with shottky contact increased the electronic current flow, in spite of depletion of carriers.

• Journal of the Korean Society for Heat Treatment
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• v.31 no.3
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• pp.135-142
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• 2018

In this study, we have fabricated n-type $Bi_2Te_{2.85}Se_{0.15}$ compounds by different processing routes such as crushing, milling and mixing respectively. Subsequently, the obtained powders were consolidated by spark plasma sintering (SPS). The phase crystallinity of bulk samples were identified using X-ray diffraction technique. Powder morphology and fracture surface of bulk samples were observed using the scanning electron microscopy (SEM). The Seebeck coefficient and electrical conductivity values were significantly increased for the milling sample than crushing and mixing samples. As a result, the maximum power factor was obtained $2.4mW/mK^2$, which is thrice than that of crushing process. The maximum figure of merit (ZT) of 0.77 was achieved at 400 K for the milling sample. Furthermore, relatively high hardness and density values were noticed for the different processed samples.

• Journal of Powder Materials
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• v.24 no.5
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• pp.357-363
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• 2017

In this study, Bi-Sb-Te thermoelectric materials are produced by mechanical alloying (MA) and spark plasma sintering (SPS). To examine the influence of the milling atmosphere on the microstructure and thermo-electric (TE) properties, a p-type Bi-Sb-Te composite powder is mechanically alloyed in the presence of argon and air atmospheres. The oxygen content increases to 55% when the powder is milled in the air atmosphere, compared with argon. All grains are similar in size and uniformly, distributed in both atmospheric sintered samples. The Seebeck coefficient is higher, while the electrical conductivity is lower in the MA (Air) sample due to a low carrier concentration compared to the MA (Ar) sintered sample. The maximum figure of merit (ZT) is 0.91 and 0.82 at 350 K for the MA (Ar) and MA (Air) sintered samples, respectively. The slight enhancement in the ZT value is due to the decrease in the oxygen content during the MA (Ar) process. Moreover, the combination of mechanical alloying and SPS process shows a higher hardness and density values for the sintered samples.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09b
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• pp.1203-1204
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• 2006

Cu-$TiB_2$ nanocomposite powders were synthesized by combining high-energy ball-milling of Cu-Ti-B mixtures and subsequent self-propagating high temperature synthesis (SHS). Cu-40wt.%$TiB_2$ powders were produced by SHS reaction and ball-milled. The milled SHS powder was mixed with Cu powders by ball milling to produce Cu-2.5wt.%$TiB_2$ composites. $TiB_2$ particles less than 250nm were formed in the copper matrix after SHS-reaction. The releative density, electrical conductivity and hardness of specimens sintered at $650-750^{\circ}C$ were nearly 98%, 83%IACS and 71HRB, respectively. After heat treatment at 850 to $950^{\circ}C$ for 2 hours under Ar atmosphere, hardness was descedned by 15%. Our Cu-$TiB_2$ composite showed good thermal stability at eleveated temperature.