• Journal of Electrical Engineering and Technology
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• v.8 no.6
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• pp.1462-1467
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• 2013

A pseudo 480-Hz drive method has been proposed to reduce the dynamic false contour noise that occurs on flat panel displays with displaying grayscale image in the digital mode, such as plasma display panels. The proposed method makes the image movements nearly continuous by rearranging the 8-bit image data displayed for 1 TV field into 8 subfields. The position of the image data rearranged in subfields has been optimized on the basis of the speed of the moving image by computer simulations for the dynamic false contour noise. It is verified that a significant reduction in the dynamic false contour noise is achieved with the proposed method as compared to the conventional noise reduction technologies. Moreover, to reduce the noise in digital mode displays, the proposed technology requires only 8 subfields. Therefore, there is no reduction in the brightness of the image.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.57-60
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• 2008

Over 5lm/W white luminous efficacy was obtained by 11" color test panel with narrowed discharge electrodes combined with high Xe partial pressure. By using optical spectroscopic methods, it was suggested that the electron heating efficiency is the most significant to improve the plasma efficiency in our experimental conditions.

• 한국정보디스플레이학회:학술대회논문집
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• 2000.01a
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• pp.105-106
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• 2000

The positive slope of the current-voltage characteristic at pressure up to 850 torr was obtained using the closed microhollow cathode without the individual and/or distributed ballast. This indicates that the stable parallel operation of the discharge was also achieved using the closed microhollow cathode. The parallel operation makes it possible to manufacture de plasma displays with high pressure, small discharge current, and long lifetime.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.132-132
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• 2015

Virtual metrology (VM) model based on plasma information (PI) parameter for C4F8 plasma-assisted oxide etching processes is developed to predict and monitor the process results such as an etching rate with improved performance. To apply fault detection and classification (FDC) or advanced process control (APC) models on to the real mass production lines efficiently, high performance VM model is certainly required and principal component regression (PCR) is preferred technique for VM modeling despite this method requires many number of data set to obtain statistically guaranteed accuracy. In this study, as an effective method to include the 'good information' representing parameter into the VM model, PI parameters are introduced and applied for the etch rate prediction. By the adoption of PI parameters of b-, q-factors and surface passivation parameters as PCs into the PCR based VM model, information about the reactions in the plasma volume, surface, and sheath regions can be efficiently included into the VM model; thus, the performance of VM is secured even for insufficient data set provided cases. For mass production data of 350 wafers, developed PI based VM (PI-VM) model was satisfied required prediction accuracy of industry in C4F8 plasma-assisted oxide etching process.

• Macromolecular Research
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• v.12 no.1
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• pp.134-140
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• 2004

Semi-crystalline poly(ethylene terephthalate) (PET) film surfaces were modified with argon and oxygen plasmas by radio-frequency (RF) glow discharge at 240 mTorr/40 W; the changes in topography and surface structure were investigated by atomic force microscopy (AFM) in conjunction with specular reflectance of infrared microspectroscopy (IMS). Under our operating conditions, analysis of the AFM images revealed that longer plasma treatment results in significant ablation on the film surface with increasing roughness, regardless of the kind of plasma used. The basic topographies, however, were different depending upon the kind of gas used. The specular reflectance analysis showed that the ablative mechanisms of the argon and oxygen plasma treatments are entirely different with one another. For the Ar-plasma-treated PET surface, no observable difference in the chemical structure was observed before and after plasma treatment. On the other hand, the oxygen-plasma-treated PET surface displays a significant decrease in the number of aliphatic C-H groups. We conclude that a constant removal of material from the PET surface occurs when using the Ar-plasma, whereas preferential etching of aliphatic C-H groups, with respect to, e.g. , carbonyl and ether groups, occurs upon oxygen plasma.

• YAKHAK HOEJI
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• v.37 no.6
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• pp.571-576
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• 1993

The substrate specificity of the purified rabbit plasma alkaline phosphatase (ALPase) was determined towards a extended range of potential substrates including relatively simple phosphate derivatives as p-NPP and indolyl phosphate, and several synthetic peptides and phosphoproteins. These results further estabilish the broad substrate specificity of these circulating enzymes. Interestingly, the plasma ALPase preferentially dephosphorylates Thr over Ser residues, as demonstrated with a series of synthetic peptides. The latter result is in contradiction to the behaviour of the tissue ALPase, which is thought to the ultimate source of plasma ALPase, and open therefore new perspectives with respective to the origin and "solubilisation" processes of these enzymes. Dephsphrylation of protein substrates by endogenous and isolated plasma ALPases indicates that ALPase probably displays protein phosphatase activity in vivo.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.198.1-198.1
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• 2016

Organic light-emitting diode (OLED) displays have promising potential to replace liquid crystal displays (LCDs) due to their advantages of low power consumption, fast response time, broad viewing angle and flexibility. Organic light emitting materials are vulnerable to moisture and oxygen, so inorganic thin films are required for barrier substrates and encapsulations.[1-2]. In this work, the silicon-based inorganic thin films are deposited on plastic substrates by plasma-enhanced chemical vapor deposition (PECVD) at low temperature. It is necessary to deposit thin film at low temperature. Because the heat gives damage to flexible plastic substrates. As one of the transparent diffusion barrier materials, silicon oxides have been investigated. $SiO_x$ have less toxic, so it is one of the more widely examined materials as a diffusion barrier in addition to the dielectric materials in solid-state electronics [3-4]. The $SiO_x$ thin films are deposited by a PECVD process in low temperature below $100^{\circ}C$. Water vapor transmission rate (WVTR) was determined by a calcium resistance test, and the rate less than $10.^{-2}g/m^2{\cdot}day$ was achieved. And then, flexibility of the film was also evaluated.

• Journal of Satellite, Information and Communications
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• v.12 no.1
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• pp.114-119
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• 2017

In this paper we present the search on HC-06 Bluetooth based driver module for emergency LED Multi-Directional Indicator. Nowadays, a growing trends in which electronic displays such as LED, LCD or plasma monitors are being installed in public places like bars, stores, entertainment areas, restaurants, lobbies, etc. In this paper, the study is curried out on efficiency of HC-06 Bluetooth module based controller driver that relates generally to the field of emergency signage management systems for displaying various indicator contents remotely on electronic displays in public and privates venues. It allows user smart devices interaction remotely with digital signage by providing content for displaying on at least one display in a venue. Depending on the emergency case, HC-06 Bluetooth based driver module proves the high efficiency as well as good performance of processing and communicating remotely the indicator based message that is displayed from a venue management control system by using smart devices. The system combines smart device that linked to HC-06 Bluetooth module with ATmega168/328 embedded micro controller which result by switching the displayer containing the digital signage indicator based message.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.2 no.1
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• pp.3-9
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• 2009

Although Active matrix organic light emitting diode (AMOLED) display has a better image quality in terms of viewing angle, contrast ratio, and response time than liquid crystal displays (LCDs), it still has some critical issues such as lifetime, residual images, and brightness non-uniformity due to non-uniformity in electrical characteristics of driving TFTs and IR drops on supplied power line. Among them, we improved irrecoverable residual images of AMOLED displays which is mainly related to the hysteresis characteristics of driving TFTs. We consider four kinds of surface treatment conditions before gate oxide deposition for improving hysteresis characteristics. We can reduce the hysteresis level of p-channel TFT to 0.23 V, interface trap states between the poly-Si layer and gate insulator to $3.11{\times}10^{11}cm^{-2}$, and output current variation of p-channel TFT to 3.65 % through the surface treatment using ultraviolet light and H2 plasma. Therefore, the recoverable residual image problem of AMOLED displays can be improved by surface treatment using ultraviolet light and $H_2$ plasma.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.4
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• pp.373-378
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• 2006

We report on plasma damage free-sputtering technologies for organic light emitting diodes (OLEDs), organic thin film transistor (OTFT) and flexible displays by using a box cathode sputtering (BCS) method. Specially designed BCS system has two facing targets generating high magnetic fields ideally entering and leaving the targets, perpendicularly. This target geometry allows the formation of high-density plasma between targets and enables us to realize plasma damage free sputtering on organic layer without protection layer against plasma. The OLED with Al cathode prepared by BCS shows electrical and optical characteristics comparable to OLED with thermally evaporated Mg-Ag cathode. It was found that OLED with Al cathode layer prepared by BCS has much lower leakage current density ($1{\times}10^{-5}\;mA/cm^2$ at -6 V) than that $(1{\times}10^{-2}{\sim}-10^0\;mA/cm^2)$ of OLED prepared by conventional DC sputtering system. This indicates that BCS technique is a promising electrode deposition method for substituting conventional thermal evaporation and DC/RF sputtering in fabrication process of organic based optoelectronics.