• Journal of the Korean Vacuum Society
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• v.13 no.4
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• pp.175-181
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• 2004

We investigated the stability of the DLC film coated on 304 stainless steel substrate by Radio frequency assisted chemical vapor deposition method. Fracture and spallation behaviour of the coating was observed during micro-tensile test of the fil $m_strate composite. As the tensile deformation progressed, the cracks of the film were observed in the perpendicular direction to the tensile axis. Further deformation resulted in the plastic deformation with $45^{\circ}$ slip bands on the substrate surface. Spallation of the film occurred with the plastic deformation, which was initiated at the cracks of the film and was aligned along the slip directions. We found that both the cracking and the spallation behaviors are strongly dependent on the pre-treatment condition, such as Ar plasma pre-treatment. The spallation of the film was considerably suppressed in an optimized condition of the substrate cleaning by Ar glow discharge. We observed the improved stability with increasing duration of Ar plasma pre-treatment.nt.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.232-232
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• 2011

DAF는 기존 침전 공정에 비해 뛰어난 정수 품질과 빠른 처리 시간으로 차세대 정수 공정으로 각광 받고 있다. DAF는 기포 생성 방법에 따라 용존 공기 부상법, 분산 공기 부상법, 진공 부상법, 전해 부상법, 미생물학적 부상법 등이 있다. 이 중 가장 많이 쓰이는 방식은 용존 공기 부상법으로, 과포화 상태의 기체와 액체의 혼합액을 압력을 급격히 감소시켜 기포를 발생 시키는 방법이다. 이 방법은 기포의 발생은 많지만 장비의 크기가 거대하고 시설제조 비용이 많이 드는 단점이 있다. 수중에서 발생되는 플라즈마는 그 구조와 메카니즘에 따라 생성되는 버블의 양을 제어할 수 있음을 확인하였다. 모세관 형태의 전극을 이용한 수중 방전은 전원 공급 장치만 있다면 적은 공간으로도 효과적으로 기포를 생성 할 수 있기 때문에, 수중 방전을 이용하여 기포 발생 후 DAF에 적용 가능한지 알아보고자 한다. DAF공정에서 필요한 요인으로는 기포의 크기, 개수, 성분 물질 등이 있는데, 그 중 가장 핵심은 기포의 크기 이다. 그래서 간단한 전원 장치와 리액터 제작 후 방전에 최적화 된 전극으로 기포를 발생시켜 기포의 크기를 측정하였다. 기포의 크기는 전극의 직경과 방전공간의 비율에 따라 제어가 가능함을 확인하였고 평균 기포의 크기는 약 50 ${\mu}m$로서, DAF에 적용 할 수 있는 크기이다. 일반적으로 기포의 사이즈가 작을수록 입자 제거율이 높은데, 실제 DAF공정에서 사용되는 기포의 사이즈는 80 ${\mu}m$정도 이다. 따라서 개발된 기포 발생장치를 DAF 공정에 응용한다면 높은 효율을 가질 것으로 판단된다.

• Journal of Korean Society on Water Environment
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• v.30 no.4
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• pp.394-402
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• 2014

High-voltage dielectric discharges are an emerging technique in environmental pollutant degradation, which are characterized by the production of hydroxyl radicals as the primary degradation species. The initiation and propagation of the electrical discharges depends on several physical, chemical, and electrical parameters such as 1st and 2nd voltage of power, gas supply, conductivity and pH. These parameters also influence the physical and chemical characteristics of the discharges, including the production of reactive species such as OH, $H_2O_2$ and $O_3$. The experimental results showed that the optimum 1st voltage and oxygen flow rate for RNO (N-Dimethyl-4-nitrosoaniline, indicator of the generation of OH radical) degradation were 160 V (2nd voltage of is 15 kV) and 4 L/min, respectively. As the 2nd voltage (4 kV to 15 kV) was increase, RNO degradation was increased and, generated $H_2O_2$ and $O_3$ concentration were increased. The conductivity of the solution was not influencing the RNO degradation, $H_2O_2$ and $O_3$ generation. The pH effect on RNO degradation was not high. However, the lower pH and the conductivity, the higher $H_2O_2$ and $O_3$ generation were observed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.164-165
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• 2005

The dry etch characteristics of GaAs over both AlGaAs and InGaP in planar inductively coupled $BCl_3$-based plasmas(ICP) with additions of $SF_6$ or $CF_4$ were studied. The additions of flourine gases provided enhanced etch selectivities of GaAs/AlGaAs and GaAs/InGaP. The etch stop reaction involving formation of involatile $AlF_3$ and $InF_3$ (boiling points of etch products: $AlF_3\sim1300^{\circ}C$, $InF_3$ > $1200^{\circ}C$ at atmosphere) were found to be effective under high density inductively coupled plasma condition. Decrease of etch rates of all materials was probably due to strong increase of flourine atoms in the discharge, which blocked the surface of the material against chlorine neutral adsorption. The process parameters were ICP source power (0 - 500 W), RF chuck power (0 - 30 W) and variable gas composition. The process results were characterized in terms of etch rate, selectivities of GaAs over AlGaAs and InGaP, surface morphology, surface roughness and residues after etching.

• Applied Chemistry for Engineering
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• v.27 no.1
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• pp.92-100
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• 2016

Low-temperature conversion of nitrogen oxides using plasma-assisted hydrocarbon selective catalytic reduction of (HC-SCR) was investigated. Plasma was created in the catalyst-packed bed so that it could directly interact with the catalyst. The effect of the reaction temperature, the shape of catalyst, the concentration of n-heptane as a reducing agent, the oxygen content, the water vapor content and the energy density on $NO_x$ removal was examined. $NO_x$ conversion efficiencies achieved with the plasma-catalytic hybrid process at a temperature of $250^{\circ}C$ and an specific energy input (SIE) of $42J\;L^{-1}$ were 83% and 69% for one-dimensional Ag catalyst ($Ag\;(nanowire)/{\gamma}-Al_2O_3$) and spherical Ag catalyst ($Ag\;(sphere)/{\gamma}-Al_2O_3$), respectively, whereas that obtained with the catalyst-alone was considerably lower (about 30%) even with $Ag\;(nanowire)/{\gamma}-Al_2O_3$ under the same condition. The enhanced catalytic activity towards $NO_x$ conversion in the presence of plasma can be explained by the formation of more reactive $NO_2$ species and partially oxidized hydrocarbon intermediates from the oxidation of NO and n-heptane under plasma discharge. Increasing the SIE tended to improve $NO_x$ conversion efficiency, and so did the increase in the n-heptane concentration; however, a further increase in the n-heptane concentration beyond $C_1/NO_x$ ratio of 5 did not improve the $NO_x$ conversion efficiency any more. The increase in the humidity affected negatively the $NO_x$ conversion efficiency, resulting in lowering the $NO_x$ conversion efficiency at the higher water vapor content, because water molecules competed with $NO_x$ species for the same active site. The $NO_x$ conversion efficiency increased with increasing the oxygen content from 3 to 15%, in particular at low SIE values, because the formation of $NO_2$ and partially oxidized hydrocarbon intermediates was facilitated.

• Clean Technology
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• v.25 no.1
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• pp.81-90
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• 2019

A dielectric barrier discharge (DBD) plasma reactor packed with $Ni-CeO_2/{\gamma}-Al_2O_3$ catalyst was used for the dry ($CO_2$) reforming of propane (DRP) to improve the production of syngas (a mixture of $H_2$ and CO) and the catalyst stability. The plasma-catalytic DRP was carried out with either thermally or plasma-reduced $Ni-CeO_2/{\gamma}-Al_2O_3$ catalyst at a $C_3H_8/CO_2$ ratio of 1/3 and a total feed gas flow rate of $300mL\;min^{-1}$. The catalytic activities associated with the DRP were evaluated in the range of $500{\sim}600^{\circ}C$. Following the calcination in ambient air, the ${\gamma}-Al_2O_3$ impregnated with the precursor solution ($Ni(NO_3)_2$ and $Ce(NO_3)_2$) was subjected to reduction in an $H_2/Ar$ atmosphere to prepare $Ni-CeO_2/{\gamma}-Al_2O_3$ catalyst. The characteristics of the catalysts were examined using X-ray diffraction (XRD), transmission electron microscopy (TEM), field emission scanning electron microscopy (FE-SEM), energy dispersive X-ray spectrometry (EDS), temperature programmed reduction ($H_2-TPR$), temperature programmed desorption ($H_2-TPD$, $CO_2-TPD$), temperature programmed oxidation (TPO), and Raman spectroscopy. The investigation revealed that the plasma-reduced $Ni-CeO_2/{\gamma}-Al_2O_3$ catalyst exhibited superior catalytic activity for the production of syngas, compared to the thermally reduced catalyst. Besides, the plasma-reduced $Ni-CeO_2/{\gamma}-Al_2O_3$ catalyst was found to show long-term catalytic stability with respect to coke resistance that is main concern regarding the DRP process.

• Applied Microscopy
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• v.45 no.4
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• pp.242-248
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• 2015

In this paper, three carbon sources, i.e., solid graphite, gaseous CH4 and liquid ethanol, and one solid silicon source were employed to synthesize SiC/C nanocomposite powders by arc-discharge plasma. The processing conditions such as the component ratios of raw materials, atmospheric gases, etc. were adjusted for controllable synthesis of the nanopowders. It is indicated that both of solid graphite and silicon can be co-evaporated and reacted to form nanophases of cubic ${\beta}$-SiC with ~50 nm in mean size and a little free graphite; the carbon atoms decomposed from gaseous $CH_4$ favor to combine with the evaporated silicon atoms to form the dominant SiC nanophase; liquid carbon source of ethanol can also be used to harvest the main ${\beta}$-SiC and minor 6H-SiC phases in the assembly of nanoparticles. The as-prepared SiC/C nanocomposite powders were further purified by a heat-treatment in air and their photocatalytic performances were then greatly improved.

• Journal of Technologic Dentistry
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• v.31 no.1
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• pp.55-61
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• 2009

Passive fitting of meso-structure and super-structures is a predominant requirement for the longevity and clinical success of osseointegrated dental implants. However, precision and passive fitting has been unpredictable with conventional methods of casting as well as for corrective techniques. Alternative to conventional techniques, electro discharge machining(EDM) is an advanced method introduced to dental technology to improve the passive fitting of implant prosthesis. In this technique material is removed by melting and vaporization in electric sparks. Regarding the efficacy of EDM, the application of this technique induces severe surface morphological and elemental alterations due to the high temperatures developed during machining, which vary between $10,000{\sim}20,000^{\circ}C$. The aim of this study was to investigate the morphological and elemental alterations induced by EDM process of casting dental gold alloy and non-precious alloy used for the production of implant-supported prosthesis. A conventional clinical dental casting alloys were used for experimental specimens patterns, which were divided in three groups, high fineness gold alloy(Au 75%, HG group), low fineness gold alloy(Au 55%, LG group) and nonprecious metal alloy(Ni-Cr, NP group). The UCLA type plastic abutment patterns were invested with conventional investment material and were cast in a centrifugal casting machine. Castings were sandblasted with $50{\mu}m\;Al_2O_3$. One casting specimen of each group was polished by conventional finishing(HGCON, LGCON, NPCON) and one specimen of each group was subjected to EDM in a system using Cu electrodes, kerosene as dielectric fluid in 10 min for gold alloy and 20 min for Ni-Cr alloy(HGEDM. LGEDM, NOEDM). The surface morphology of all specimens was studied under an energy dispersive X-ray spectrometer (EDS). The quantitative results from EDS analysis are presented on the HGEDM and LGEDM specimens a significant increase in C and Cu concentrations was found after EDM finishing. The different result was documented for C on the NPEDM with a significant uptake of O after EDM finishing, whereas Al, Si showed a significant decrease in their concentrations. EDS analysis showed a serious uptake of C and Cu after the EDM procedure in the alloys studied. The C uptake after the EDM process is a common finding and it is attributed to the decomposition of the dielectric fluid in the plasma column, probably due to the development of extremely high temperatures. The Cu uptake is readily explained from the decomposition of Cu electrodes, something which is also a common finding after the EDM procedure. However, all the aforementioned mechanisms require further research. The clinical implication of these findings is related with the biological and corrosion resistance of surfaces prepared by the EDM process.

• Journal of Surface Science and Engineering
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• v.41 no.5
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• pp.214-219
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• 2008

Indium tin oxide (ITO) films were deposited on PET substrate by RF superimposed DC magnetron sputtering using ITO (doped with 10 wt% $SnO_2$) target. Substrate temperature was maintained below $750^{\circ}C$ without intentionally substrate heating during the deposition. The discharge voltage of DC power supply was decreased from 280 V to 100 V when superimposed RF power was increased from 0 W to 150 W. The electrical properties of the ITO films were improved with increasing of superimposed RF power. In the result of cyclic bending test, relatively high mechanical property was obtained for the ITO film deposited with RF power of 75 W under DC current of 0.75 A which could be attributed to the decrease of internal stress caused by decrease in both deposition rate and plasma impedance.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.223-226
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• 2004

MgO thin films were deposited bye-beam evaporation on $SiO_2$/Si wafers for the application of a protective layer in alternating current plasma display panels (AC-PDPs). Three different MgO sources, single crystal, melted polycrystal and sintered polycrystal, were used to find out the change of the properties of MgO protective layer depending on the source type. The properties of MgO thin films such as density, orientation and surface morphology were influenced by the source type. MgO thin films deposited with the melted polycrystal source had the highest density with the highest (100) preferred orientation, whereas the films deposited with the sintered polycrystal source had the lowest density with less preferred orientation. Such a result seems to be originated from the different mobility of adatoms on the surface of the deposited MgO thin films. Different microstructures of MgO thin films deposited even in the same deposition condition were observed depending on the MgO source type, resulting in different discharge characteristics.