• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.201-202
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• 2003

We developed a novel growth method of aligned carbon nanotubes. Aligned carbon nanotubes are grown on a metal catalyst on a glass substrate using biased Helicon plasma chemical vapor deposition (HPECVD) of $CH_4/H_2$ gases from 400 C to 500 C. The Helicon plasma source is one of the high-density plasma sources and is promising for low temperature carbon deposition. A Ni film was used as a catalyst to reduce the activation energy of the nanotubes' growth. The carbon nanotubes were deposited on the nickel catalysis layer selectively.

• Proceedings of the KIEE Conference
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• 1991.07a
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• pp.191-193
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• 1991

In this paper, we introduce silicon dioxide films deposited by Laser CVD, and evaluate the breakdown characteristics of these films by TZDB(Time Zero Dieiectric Breakdown) and TDDB(Time Dependent Dielectric Breakdown) test, failure times against eletric field are examined and accelation factors ${\beta}$ are obtained, and also, long term reliability is described by examining TDDB under positive voltage bias, all the above results are compared with PECVD(Plasma Enhanced CVD) $SiO_2$ breakdown, data, as a result, it is shown that the breakdown characteristics of Laser CVD $SiO_2$ films is improved.

• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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• 1998.10a
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• pp.67-74
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• 1998

Two kinds of polished and unpolished freestanding films prepared by DC plasma CVD method were impacted by SiC particles to understand erosion mechanism. Erosion damage caused by solid impact was characterized by surface profilometer, scanning electron microscopy and Raman spectroscopy. Gradually decrease of surface roughness and sharp reduction of crystallinity for unpolished CVD films were observed with increasing erosion time. It was found that smaller grains of the diamond were removed in early stage of erosion process and larger grains were eroded with further impingement. By introduction of re-growth method on polished diamond, further understanding of erosion mechanism was achieved. Most of the surface fractures were initiated at the grain boundary.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.183-183
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• 2010

최근 고밀도 플라즈마(High Density Plasma, HDP)를 이용하여 STI (shallow trench Isolation) 공정에 사용하기 위한 높은 종횡비를 가지는 갭을 공극 없이 절연물질로 채우는 HDP CVD 법이 개발되어 사용되고 있으며, HDP 공정에서는 그 증착 과정 중에 스퍼터링(Sputtering)에 의한 식각이 동시에 발생하기 때문에 높은 종횡비를 가지는 갭을 공극 없이 채우는 것이 가능하게 되었다. 이러한 특성을 이용하여 HDP CVD 공정은 주로 STI 와 알루미늄 배선간의 갭을 실리콘 산화막 ($SiO_2$)의 절연막으로 채우는 데 주로 사용되고 있다. 이 논문에서는 새로 개발된 HDP CVD 법을 적용하여 300 mm Si 웨이퍼에 $SiO_2$ 절연막을 증착하여 웨이퍼의 중심과 가장자리의 deposition uniformity를 nano-indenter system을 이용하여 연구하였으며, 그 결과 300 mm 웨이퍼에서 균일한 탄성계수 값이 측정되었다. 또한 HDP CVD로 제작된 SiO2 박막의 탄성계수 값이 99 - 107 GPa로 측정되어 기존 PECVD-$SiO_2$ 박막보다 약 10 - 20% 향상된 것을 확인하였다.

• Journal of the Semiconductor & Display Technology
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• v.19 no.2
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• pp.16-21
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• 2020

How accurately reproducible energy is delivered to the wafer in the process of making thin films using PE-CVD (Plasma enhanced chemical vapor deposition) during the semiconductor process. This is the most important technique, and most of the reaction on the wafer surface is made by thermal energy. In this study, we studied the method of monitoring the change of thermal energy transferred to the wafer surface by monitoring the temperature change according to the change of the thin film formed on the showerhead facing the wafer. Through this research, we could confirm the monitoring of wafer thin-film which is changed due to abnormal operation and accumulation of equipment, and we can expect improvement of semiconductor quality and yield through process reproducibility and equipment status by real-time monitoring of problem of deposition process equipment performance.

• Journal of Surface Science and Engineering
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• v.29 no.6
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• pp.781-787
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• 1996

Silicom oxide films with good water repellency were prepared by rf plasma-enhanced CVD (rf-PECVD) using four kinds of organosilicon compound, which had different number of methyl ($CH_3$) groups, and oxygen as gas sources. The differences in the deposition rates, film composition and film properties were studied in detail. Water repellency depended on the number of $CH_3$ groups in the organosilicon compounds and the partial pressure of oxygen in the plasma. The highest contact angle for water drops, about 95 degrees, was obtained when trimethy lmethoxy silane (TMMOS) was used. The contact angle decreased with the amount of oxygen gas introduced into the plasma. The dissociation of $CH_3$ groups by adding oxygen was comfirmed by Fourier transform infrared spectroscopy(FTIR) and X-ray photoelectron spectroscopy (XPS). The optical properties were estimated by double-beam spectroscopy and ellipsometry. The transmittance of the glass plate coated by the film prepared with tetramethoxy silane (TMOS) was about 90% and the refractive index of film was 1.44. This value was smaller than the refractive index of a glass plate(soda lime glass, refractive index is 1.515) and this film played a role of anti-refractive coating.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2003.10a
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• pp.54-54
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• 2003

DLC films were deposited on Si(100) substrates by inductively coupled plasma (ICP) assisted chemical vapor deposition (CVD). A mixture of acetylene (C$_2$H$_2$) and argon (Ar) gases was used as the precursor and plasma source, respectively. The structure of the films was characterized by the Raman spectroscopy. Results from the Raman spectroscopy analysis indicated that the property change of the DLC films is due to the sp$^3$ and sp$^2$ ratio in the films under various conditions such as ICP power, working pressure and RF substrate bias. The hydrogen content in the DLC films was determined by an electron recoil detector (ERB). The roughness of the films was measured by atomic force microscope (Am). A microhardness tester was used for the hardness and elastic modulus measurement. The DLC film showed a maximum hardness of 37㎬. In this work, the relationship between deposition parameters and mechanical properties were discussed.

• Journal of the Korean Vacuum Society
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• v.2 no.3
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• pp.346-354
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• 1993

The diamond particles and films were deposited on Si and qurtz substrate for $CH_4-H_2$ mixed gas by using RF plasma CVD. The temperature of substrate and the thinkness of films deposited on Si substrate were uniformly kept up by inserting metal plate between substrate and substrate holder. On increasing the reaction pressure in the same discharge power, the morphologies of films were changed from well-defind films to micro-crystal or ball-like. When diamond films were deposited on Si substrate from $CH_4-H_2$ mixed gas, we obtained well-defined diamond films at lower concentration than 0.5 vol% of $CH_4/H_2$. The deposited diamond films were indentified by SEM, XRD and Raman spectroscopy.

• Journal of the Microelectronics and Packaging Society
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• v.8 no.1
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• pp.13-18
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• 2001

Carbon nanotubes (CNTs) were grown on Ni-coated glass substrates by catalytic chemical vapor depositors (CVD) using RF plasma under $600^{\circ}C$. Various types of CNTs were obtained by different growth temperature, etching period and thickness of Ni catalyst. $NH_3$ or $H_2$ gas was used as a etching gas, then $C_2H_2$ gas was flowed as carbon source. Vertically aligned CNTs with diameter of 150 nm and length of 3 $\mu\textrm{m}$ were observed by SEM. CNTs synthesized by catalytic CVD using RF plasma should be expected to FED emitter.

• Carbon letters
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• v.12 no.4
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• pp.185-193
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• 2011

Carbon nanotubes (CNTs) have developed into one of the most competitively researched nano-materials of this decade because of their structural uniqueness and excellent physical properties such as nanoscale one dimensionality, high aspect ratio, high mechanical strength, thermal conductivity and excellent electrical conductivity. Mass production and structure control of CNTs are key factors for a feasible CNT industry. Water and ethanol vapor enhance the catalytic activity for massive growth of vertically aligned CNTs. A shower system for gas flow improves the growth of vertically aligned single walled CNTs (SWCNTs) by controlling the gas flow direction. Delivery of gases from the top of the nanotubes enables direct and precise supply of carbon source and water vapor to the catalysts. High quality vertically aligned SWCNTs synthesized using plasma enhance the chemical vapor deposition technique on substrate with suitable metal catalyst particles. This review provides an introduction to the concept of the growth of vertically aligned SWCNTs and covers advanced topics on the controlled synthesis of vertically aligned SWCNTs.