• Composites Research
• /
• v.23 no.6
• /
• pp.32-38
• /
• 2010

The effect of the atmospheric pressure plasma(APP) treatments is experimentally investigated to ascertain the optimum condition to yield the best adhesive properties between a polyamide woven fabric and acrylonitrile butadiene rubber(NBR). For the atmospheric pressure flame plasma(APFP) treatment, the optimum number of treatment at given conditions is 2 times. The thermal deformation of the fabric is more serious with increasing the number of APFP treatment. The adhesive strength of the case with APFP treated fabric is increased about 35% when compare to the case with non-APFP treated one for the interface(bonding agent one or two coatings). When the surface is coated twice with the bonding agent, the adhesive energy with APFP treated fabric is increased about 4 times. It was found that the surface modification of polyamide woven fabric by APFP treatment is a fast, economic and applicable method to improve the adhesive properties between woven fabric and rubber when compared to other APP treatments.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.16 no.8
• /
• pp.700-704
• /
• 2003

This paper describes on characteristics of 2" 3C-SiC wafer bonding using PECVD (plasma enhanced chemical vapor deposition) oxide and HF (hydrofluoride acid) for SiCOI (SiC-on-Insulator) structures and MEMS (micro-electro-mechanical system) applications. In this work, insulator layers were formed on a heteroepitaxial 3C-SiC film grown on a Si (001) wafer by thermal wet oxidation and PECVD process, successively. The pre-bonding of two polished PECVD oxide layers made the surface activation in HF and bonded under applied pressure. The bonding characteristics were evaluated by the effect of HF concentration used in the surface treatment on the roughness of the oxide and pre-bonding strength. Hydrophilic character of the oxidized 3C-SiC film surface was investigated by ATR-FTIR (attenuated total reflection Fourier transformed infrared spectroscopy). The root-mean-square suface roughness of the oxidized SiC layers was measured by AFM (atomic force microscope). The strength of the bond was measured by tensile strength meter. The bonded interface was also analyzed by IR camera and SEM (scanning electron microscope), and there are no bubbles or cavities in the bonding interface. The bonding strength initially increases with increasing HF concentration and reaches the maximum value at 2.0 ％ and then decreases. These results indicate that the 3C-SiC wafer direct bonding technique will offers significant advantages in the harsh MEMS applications.ions.

• Composites Research
• /
• v.36 no.6
• /
• pp.441-447
• /
• 2023

Recently, as demand for high-strength, lightweight materials has increased, there has been great interest in joining with metals. In the case of mechanical bonding, such as bolting and riveting, chemical bonding using adhesives is attracting attention as stress concentration, cracks, and peeling occur. In this paper, surface treatment was performed to improve the adhesive strength, and the change in adhesive strength was analyzed. For the adhesive strength test were conducted with Carbon Fiber Reinforced Plastic(CFRP), CR340(Steel), and Al6061(Aluminum), and laser and plasma surface treatment were used. After plasma surface treatment, the adhesive strength improved by 7.3% and 39.2% in CFRP-CR340 and CFRP-Al6061, respectively. CR340-Al6061 was improved by 56.2% in laser surface treatment. Surface free energy(SFE) was measured by contact angle after plasma treatment, and it is thought that the adhesion strength was improved by minimizing damage through a chemical reaction mechanism. For laser surface treatment, it is thought that creates a rough bonding surface and improves adhesive strength due to the mechanical interlocking effect. Therefore, surface treatment is effect to improve adhesive strength, and based on this paper, the long-term fatigue test will be conducted to prevent fatigue failure, which is a representative cause of actual structural damage.

• Applied Chemistry for Engineering
• /
• v.20 no.5
• /
• pp.536-541
• /
• 2009

Plasma-polymerized acrylic acid films were deposited on Si wafer and KBr pellet by remote plasma-enhanced chemical vapor deposition (PECVD). Effects of plasma power, reaction pressure, indirect plasma method on the growth rate, chemical structure, and chemical bonding state of the films were investigated. Chemical structure and chemical state of the films were characterized by Fourier transformed infrared (FT-IR) spectroscopy and X-ray photoelectron spectroscopy (XPS) analysis and curve fitting technique. Growth rate of the film increased to a saturation value with plasma power of 100 W, but showed the maximum with reaction pressure at 300 mtorr. Whenever W/FM factor (applied energy per gas molecule) increased by increasing plasma power or lowering pressure, the fragmentation of acrylic acid molecules was promoted. From the XPS curve fitting analyses, we found that the intensity of carboxyl COO bonding peak decreased with W/FM factor, and the tendency of intensity change of carboxylic COO peak was contrary to those of ether C-O and carbonyl C=O peaks.

• Journal of the Microelectronics and Packaging Society
• /
• v.28 no.2
• /
• pp.29-37
• /
• 2021

The effect of Ar/N₂ two-step plasma treatment on the quantitative interfacial adhesion energy of low temperature Cu-Cu bonding interface were systematically investigated. X-ray photoelectron spectroscopy analysis showed that Ar/N₂ 2-step plasma treatment has less copper oxide due to the formation of an effective Cu4N passivation layer. Quantitative measurements of interfacial adhesion energy of Cu-Cu bonding interface with Ar/N₂ 2-step plasma treatment were performed using a double cantilever beam (DCB) and 4-point bending (4-PB) test, where the measured values were 1.63±0.24 J/m² and 2.33±0.67 J/m², respectively. This can be explained by the increased interfacial adhesion energy according phase angle due to the effect of the higher interface roughness of 4-PB test than that of DCB test.

• Proceedings of the Korea Society for Industrial Systems Conference
• /
• 2001.05a
• /
• pp.224-231
• /
• 2001

Hydrogenated amorphous carbon films were deposited by ERC-PECVD with deposition conditions, such as ECR power, gas composition of methane and hydrogen, deposition time, and substrate bias voltage. The characteristics of the film were analyzed using the AES, ERDA, FTIR. Raman spectroscopy and micro hardness tester. From the results of AES and ERDA, the elements in the deposited film were confirmed as carbon and hydrogen atoms. FTIR spectroscopy analysis shows that the atomic bonding structure of a-C:H film consisted of sp³and sp²bonding, most of which is composed of sp³bonding. The structure of the a-C:H films changed from CH₃bonding to CH₂or CH bonding as deposition time increased. We also found that the amount of dehydrogenation in a-C:H films was increased as the bias voltage increased. Raman scattering analysis shows that integrated intensity ratio (I/sub D//I/sub G/) of the D and G peak was increased as the substrate bias voltage increased, and films hardness was increased.

• Journal of the Korean Society for Precision Engineering
• /
• v.20 no.8
• /
• pp.153-157
• /
• 2003

In the present work, the effect of plasma treatment of aluminum on the fracture toughness of CFRP/aluminum composites was investigated. The surface of the aluminum was treated by a DC plasma. The plasma treatment was carried out at volume ratio of acetylene gas to nitrogen gas of 5:5 and the treatment time used was 30 sec. Cracked lap shear specimens of aluminum/CFRP composites were made using secondary bonding procedure. Fracture toughness of aluminum/CFRP composites was determined using the work factor approach. Then, the fracture toughness of plasma-treated aluminum/CFRP composites was compared with that of untreated aluminum/CFRP composites. The results showed that the fracture toughness of plasma-treated aluminum/CFRP composites was about 50 % higher than that of untreated aluminum/CFRP composites.

• Journal of Korean Ophthalmic Optics Society
• /
• v.3 no.1
• /
• pp.1-8
• /
• 1998

The a-C:H films have been grown on the glass substrate by PECVD mathod, where plasma was generated with a 60Hz line power source. The carbonization is checked from peak intensities of D($sp^3$) and G($sp^2$) peaks in Raman spectra. The hydronization and C-H bonding status in films can also be determined from FTIR results. Both the bonding strength of C-H and the ratio of $sp^3$ to $sp^2$ in bonding are found to be slightly dependent of partial pressure of $C_2H_2$. Judging from above results, we can conclude that the best value for partial pressure of $C_2H_2$ in growing process of thick films is about 15%.

• Bulletin of the Korean Chemical Society
• /
• v.29 no.2
• /
• pp.393-397
• /
• 2008

Inductively coupled plasma atomic emission spectrometry (ICP-AES) was used to determine the presence of germanium and phosphorus in a pure gold bonding wire. The samples were dissolved with hydrobromic acid and nitric acid at room temperature. The quantitation limits were 0.012 mg L-1 at 265.118 nm for Ge and 0.009 mg L-1 at 177.495 nm for P. Using the mixed acid digestion formula of DIW+HBr+HNO3, the recoveries were in the range of 98-100% and the relative standard deviation was within 1.1-2.3%. On the other hand, the amount of Ge decreased by about 16.2% using DIW+HCl+HNO3, due to the formation of a volatile compound. The Ge contents determined using the external method and the standard addition method were 9.45 mg kg-1 and 9.24 mg kg-1, respectively, and the P contents, using the same methods, were 22.49 mg kg-1 and 23.09 mg kg-1, respectively. Both methods were successfully used to determine the trace amounts of P and Ge in the pure gold bonding wire samples.

• Journal of the Korean institute of surface engineering
• /
• v.29 no.5
• /
• pp.549-555
• /
• 1996

Diamond Like Carbon film is amorphous film which is considered to consist of three coordinate graphite structure and tetrahedron coordinate diamond structure. Its hardness, thermal conductivity and chemical stability are nearly to one of diamond. It is well known to become semi-conductor by doping of inpurity. In this study Diamond Like Carbon film was synthesized by Microwave Plasma CVD in the gas mixture of hydrogen-methan-nitrogen and doped of nitrogen on the single-crystal silicon or silica glass. The temperature of substrate and nitrogen concentration in the gas mixture had an effect on the bonding state, structural properties and conduction mechanism. The surface morphology was observed by Scanning Electron Microscope. The strucure was analyzed by laser Raman spectrometry. The bonding state was evaluated by electron spectroscopy. Diamond Like Carbon film synthesized was amorphous carbon containing the $sp^2$ and $sp^3$ carbon cluster. The number of $sp^2$ bonding increased as nitrogen concentration increased from 0 to 40 vol% in the feed gas at 1233K substrate temperature and at $7.4\times10^3$ Pa. Increase of nitrogen concentration made Diamond Like Carbon to be amorphous and the doze of nitragen could be controlled by nitrogen concentration of feed gas.