• Korean Journal of Materials Research
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• v.17 no.4
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• pp.215-221
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• 2007

The effect of $CF_4$ plasma treatment condition on the interfacial adhesion energy of inkjet printed Ag/polyimide system is evaluated from $180^{\circ}$ peel test by calculating the plastic deformation energy of peeled metal films. Interfacial fracture energy between Ag and as-received polyimide was 5.5 g/mm. $CF_4$ plasma treatment on the polyimide surface enhanced the interfacial fracture energy up to 17.6 g/mm. This is caused by the increase in the surface roughness as well as the change in functional group of the polyimide film due to $CF_4$ plasma treatment on the polyimide surface. Therefore, both the mechanical interlocking effect and the chemical bonding effect are responsible for interfacial adhesion improvement in ink jet printed Ag/polyimide systems.

• Proceedings of the KIEE Conference
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• 1993.07b
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• pp.581-583
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• 1993

One of the principal problems encountered in the use of fiber reinforced composites is to establish an active fiber surface to achieve maximum adhesion between resin and fiber surface. In order to improve the interface bonding, the surface of glass fiber should be treated with silane coupling agent in ordinary composite manufacturing processes. However, the price of the coupling agent is very high and in the treating process voids are formed, which decreasees electrical and mechanical strength. We want to develope new process that will overcome the disadvantage of the coupling agent and achieve maximum adhesion at the interface between resin and fiber by active plasma treatment on the glass fiber surface. In this study, we investigate the improvement of contact angle on the glass plate surface as the first step in developing new GFRP.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.5 no.5
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• pp.458-461
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• 2004

In order to improve the adhesion properties of copper, MPS(3-mercaptopropyltrimethoxysilane) organic film were employed. The plasma pretreatment in pure He or $He/O_{2}$ mixed gas environment greatly increased adhesion force. Adhesion force was measured by scratch test with nano indenter. Microstructures and surface roughness were observed with scanning electron microscope(SEM). The characteristics of MPS layer for pretreatment were studied with flourier transform infrared spectroscope(FT-IR) and contact angle tester. The heighest adhesion was achieved in the specimen pretreated with mixed plasma and NPS coating, which was 56mN. Other specimen showed lower value by $20{\%}$ to $30{\%}$. The roughness of substrate was not affected by the bonding strength of copper plating.

• Corrosion Science and Technology
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• v.22 no.4
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• pp.257-264
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• 2023

Ti-6Al-4V alloys are mainly used as dental materials due to their excellent biocompatibility, corrosion resistance, and chemical stability. However, they have a low bioactivity with bioinertness in the body. Therefore, they could not directly bond with human bone. To improve their applications, their bone bonding ability and bone formation capacity should be improved. Thus, the objective of this study was to improve the bioinert surface of titanium alloy substrate to show bioactive characteristics by performing surface modification using wollastonite powder. Commercial bioactive wollastonite powder was successfully deposited onto Ti-6Al-4V alloy using a room temperature spray process. It was found that wollastonite-coated layer showed homogeneous microstructure and uniform thickness. Corrosion resistance of Ti-6Al-4V alloy was also improved by plasma electrolytic oxidation treatment. Its wettability and bioactivity were also greatly increased by wollastonite coating. Results of this study indicate that both plasma electrolytic oxidation treatment and wollastonite coating by room temperature spray process could be used to improve surface bioactivity of Ti-6Al-4V alloy substrate.

• Korean Journal of Materials Research
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• v.13 no.3
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• pp.150-154
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• 2003

Amorphous carbon nitride films were deposited on Si(001) substrates by a plasma enhanced chemical vapor deposition technique (PECVD) using $CH_4$and $N_2$as reaction gases. The growth and film properties were investigated while the gas ratio and the working pressure were changed systematically. At 1 Torr working pressure, an increase in the $N_2$partial pressure results in a significant increase of the deposition rate as well as an apparent presence of C ≡N bonding, while little affecting the microstructure and amorphus nature of the films. In the case of changing the working pressure at a fixed $N_2$partial pressure of 98%, a film grown at a medium pressure of $1${\times}$10^{-2}$ Torr shows the most prominent C=N bonding nature and photoluminescent property.

• Journal of ILASS-Korea
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• v.13 no.4
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• pp.193-199
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• 2008

Spray coating is a versatile surface modification technology in which coating is built-up based on the successive deposition of micron-scaled particles. Depending on the coating materials, the coatings can meet the required mechanical properties, corrosion resistance, and other properties of base materials. Spraying processes are mainly classified into thermal and kinetic spraying according to their bonding mechanism and deposition characteristics. Specifically, thermal spraying process can be further classified into many categories based on the design and mechanism of the process, such as frame spraying, arc spraying, atmospheric plasma spraying (APS), and high velocity oxygen-fuel (HVOF) spraying, etc. Kinetic spraying or cold gas dynamic spraying is a newly emerging coating technique which is low-temperature and high-pressure coating process. In this paper, overall view of thermal and kinetic spray coating technologies is discussed in terms of fundamentals and industrial applications. The technological characteristics and bonding mechanism of each process are introduced. Deposition behavior and properties of technologically remarkable materials are reviewed. Furthermore, industrial applications of spray coating technology and its potentials are prospected.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2003.06a
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• pp.1211-1214
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• 2003

The film is prepared by electron cyclotron resonance chemical vapor deposition (ECRCVD) employing CH$_4$ and H$_2$ gases. It is deposited by the control of microwave plasma power, gas flow ratio, deposition pressure, and In-situ thermal treatment temperature. The structure of a-C:H (hydrogenated amorphous carbon) thin film is analysed by FT-IR spectroscopy. The fraction sp$^3$ versus sp$^2$ bonding is very important to clear up the surface and interrace of a-C:H film properties such as nano-scale friction behavior. The sp$^3$ versus sp$^2$ bonding of a-C:H thin film is dependent on the deposition conditions, therefore. nano-scale friction behavior is dependent on the deposition conditions.

• Journal of Korean Ophthalmic Optics Society
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• v.6 no.1
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• pp.87-91
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• 2001

The a-C:H films have been grown on the glass substrate by PECVD method, where plasma was generated with a 60 Hz line power source. The carbonization is checked from peak intensities of D($sp^3$) and G($sp^2$) peaks in Raman spectra and is analyzed using the Gaussian convolution method of spectrum. Both the bonding strength of C-H and the ratio of $sp^3$ to $sp^2$ in bonding are found to be slightly dependent of partial pressure of $C_2H_2$.

• Journal of the Korean Vacuum Society
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• v.1 no.1
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• pp.145-152
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• 1992

Si surfaces exposed to CHF3/C2F6 gas plasmas ih reactive ion etching (RIE) have been characterized by X-ray photoelectron spectroscopy (XPS). CHF3/C2F6 gas plasma exposure of Si surface leads to the deposition of residual film containing carbon and fluorine. The narrow scan spectra of C 1s show various bonding states of carbon as C-Si, C-F/H, C-CFx(x $\leq$ 3), C-F, C-F2, and C-F3. The chemical bonding states of fluorine are described with F-Si, F-C and F-O. And the oxygen and silicon are also detected. The effects of parameters for reactive ion etching as CHF3/C2F6 gas ratio, RF power, and pressure are investigated.

• The Korean Journal of Ceramics
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• v.3 no.1
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• pp.18-20
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• 1997

The fabrication process of silicon-diamond(SOD) structure wafer were studied. Microwave plasma chemical vapor deposition (MWPCVD) and annealing technology were used to synthesize diamond film with high resistivity and thermal conductivity. Bonding and etchback silicon-on-diamond (BESOD) were utilized to form supporting substrate and single silicon thin layer of SOD wafer. At last, a SOD structure wafer with 0.3~1$\mu\textrm{m}$ silicon film and 2$\mu\textrm{m}$ diamond film was prepared. The characteristics of radiation for a CMOS integrated circuit (IC) fabricated by SOD wafer were studied.