• Title, Summary, Keyword: Plasma

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Gas phase diagnostics of high-density $SiH_4/H_2$ microwave plasma

  • Toyoda, Hirotaka;Kuroda, Toshiyuki;Ikeda, Masahira;Sakai, Junji;Ito, Yuki;Ishijima, Tatsuo
    • Proceedings of the Korean Vacuum Society Conference
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    • pp.94-94
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    • 2010
  • As a new plasma source for the plasma enhanced chemical vapor deposition (PCVD) of ${\mu}c$-Si deposition, we have demonstrated a microwave-excited plasma source, which can produce high density (${\sim}10^{12}\;cm^{-3}$) plasma with low electron temperature (~1 eV) and low plasma potential (~10 V). In this plasma source, microwave power radiated from slot antenna is distributed along the plasma-dielectric interface in large area and this enables us to produce uniform high-density plasma in large area. To optimize deposition conditions, deep understanding of gas phase chemistry is indispensable. In this presentation, we will discuss on the gas phase diagnostics of microwave $SiH_4/H_2$ plasma such as $SiH_4$ dissociation or $SiH_3$ radical profile as well as deposited film properties.

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Advanced Microwave Plasma Technology for Liquid Treatment

  • Toyoda, Hirotaka;Takahashi, T.;Takada, N.
    • Proceedings of the Korean Vacuum Society Conference
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    • pp.121.1-121.1
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    • 2014
  • Recently, much attention has been given to plasma production under liquid and its applications [1]. However, most of plasma production techniques reported so far utilize high voltage dc, ac, rf or microwave power [2], where damage to discharge electrodes and small discharge volume are remained issues. As an alternative of plasma production method under liquid, we have proposed pulsed microwave excited plasma using slot antenna, where damage to the slot electrode can be minimized and plasma volume can be increased. We have also reported improvement of treatment efficiency with use of reduced-pressure condition during the discharge [3]. To realize low pressure conditions in liquid, various alternative technique can be considered. One possible technique is simultaneous injection of microwave power and ultrasonic wave. Ultrasonic wave induces pressure fluctuation with the wave propagation and is so far used for cavitation production in the water. We propose utilization of reduced pressure induced by ultrasonic cavitation for improvement of the plasma production. Correlation between the plasma production and the ultrasonic power will be discussed.

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Structural Properties of Plasma-treated Polymer Films and Their Applications

  • Lee, Jin Young;Lee, Geon Joon;Kim, In Tae;Choi, Eun Ha
    • Proceedings of the Korean Vacuum Society Conference
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    • pp.522-522
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    • 2013
  • Plasma can be used to various applications such as sterilization, inactivation/removal of microorganisms, wound healing, tooth bleaching, cancer treatment, surface modification and plasma polymerization. In this research, we studied the effect of plasma irradiation on the structural, optical, and biological properties of the polymer films. Several polymers were synthesized and then deposited on the glass substrates. The polymer films were treated by oxygen and nitrogen plasmas. Plasma-treated films were investigated by contact angle, infrared absorption spectroscopy, cathodoluminescence spectroscopy, and scanning electron microscopy. Functional materials were prepared on plasma-treated surface, and their performances were investigated using various techniques. Next, we discuss relationship between the performance of functional materials and the structural properties of plasma-treated polymer films.

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Deposition and in-situ Plasma Doping of Plasma-Polymerized Thiophene Films Using PECVD

  • Kim, Tae-Wook;Lee, Jung-Hyun;Back, Ji-Woong;Jung, Woo-Gwang;Kim, Jin-Yeol
    • Macromolecular Research
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    • v.17 no.1
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    • pp.31-36
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    • 2009
  • Highly transparent, thin polythiophene (PT) films were successfully synthesized by the plasma polymerization of thiophene. These films were doped with $O_2$ plasma by in-situ doping technique. The plasma polymerized PT films were deposited at about 50 to 340 nm/min, depending on the temperature and plasma power. A resultant transparency as high as 85% was achieved. The plasma polymerized PT films exhibited the characteristics of an insulator or semiconductor ($10^{10{\sim}12}{\Omega}/{\Box}$, $10^{-7}S/cm$). The conductivity was immediately increased up to $10{\Omega}/{\Box}$ and $10^{-2}S/cm$, when doped with $O_2$ plasma. The plasma-doped PT films exhibited an increased surface roughness resulting in a decreased contact angle. However, the thickness of the PT layer was partially decomposed and/or etched with increasing voltage above 40 W.

Measurements of Plasma Flows in Micro-Tube/Channel Using Micro-PIV (Micro-PIV를 이용한 마이크로 튜브/채널 내에서의 혈장유동측정)

  • Ko, Choon-Sik;Yoon, Sang-Youl;Ki, Ho-Seong;Kim, Kyung-Chun
    • Transactions of the Korean Society of Mechanical Engineers B
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    • v.28 no.5
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    • pp.587-593
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    • 2004
  • In this paper, flow characteristics of plasma flow in a micro-tube were investigated experimentally using micro particle image velocimetry(micro-PIV). For comparison, the experiments were repeated for deionized(DI) wale. instead of plasma. Both velocity profiles of plasma and do-ionized water are well agreed with the theoretical velocity distribution of newtonian fluid. We also carried out generating plasma-in-oil droplet formation at a Y-junction microchannel. In order to clarify the hydrodynamic aspects involved in plasma droplet formation, Rhodamine-B were mixed with plasma only for visualization of plasma droplet. With oil as the continuous phase and plasma as the dispersed phase, plasma droplet can be generated in a continuous phase flow at a Y-junction. For given experimental parameters, regular-sized droplets are reproducibly formed at a uniform flow conditions.

A Study on the High Selective Oxide Etching using Inductively Coupled Plasma Source (유도결합형 플라즈마원을 이용한 고선택비 산화막 식각에 관한 연구)

  • 이수부;박헌건;이석현
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.11 no.4
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    • pp.261-266
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    • 1998
  • In developing the high density memory device, the etching of fine pattern is becoming increasingly important. Therefore, definition of ultra fine line and space pattern and minimization of damage and contamination are essential process. Also, the high density plasma in low operating pressure is necessary. The candidates of high density plasma sources are electron cyclotron resonance plasma, helicon wave plasma, helical resonator, and inductively coupled plasma. In this study, planar type magnetized inductively coupled plasma etcher has been built. The density and temperature of Ar plasma are measured as a function of rf power, flow rate, external magnetic field, and pressure. The oxide etch rate and selectivity to polysilicon are measured as the above mentioned conditions and self-bias voltage.

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THERMAL PLASMA DECOMPOSITION OF FLUORINATED GREENHOUSE GASES

  • Choi, Soo-Seok;Park, Dong-Wha;Watanabe, Takyuki
    • Nuclear Engineering and Technology
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    • v.44 no.1
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    • pp.21-32
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    • 2012
  • Fluorinated compounds mainly used in the semiconductor industry are potent greenhouse gases. Recently, thermal plasma gas scrubbers have been gradually replacing conventional burn-wet type gas scrubbers which are based on the combustion of fossil fuels because high conversion efficiency and control of byproduct generation are achievable in chemically reactive high temperature thermal plasma. Chemical equilibrium composition at high temperature and numerical analysis on a complex thermal flow in the thermal plasma decomposition system are used to predict the process of thermal decomposition of fluorinated gas. In order to increase economic feasibility of the thermal plasma decomposition process, increase of thermal efficiency of the plasma torch and enhancement of gas mixing between the thermal plasma jet and waste gas are discussed. In addition, noble thermal plasma systems to be applied in the thermal plasma gas treatment are introduced in the present paper.

A study of characteristics for Image sticking in AC - Plasma Display Panel

  • Han, Yong-gyu;Lee, S.B.;Jeong, S.H.;Son, C.G.;Yoo, N.L.;Lee, H.J.;Lim, J.E.;Lee, J.H.;Jeoung, J.M.;Ko, B.D.;Oh, P.Y.;Moon, M.W.;Choi, Eun-Ha
    • 한국정보디스플레이학회:학술대회논문집
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    • pp.263-265
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    • 2005
  • In the alternative current plasma display panel(AC-PDP) technology, it is very important to remove the image sticking for improving an image quality. In this paper, we have investigated the driving method of alternative current plasma display panel(AC-PDP) for preventing image sticking. We have investigated the driving method of alternative current plasma display panel(AC-PDP) for preventing image sticking. The preventing method of image sticking was proposed by adopting the Sticking Remove Pulse(SRP). The variation of brightness is most affected by the MgO to be formed at the surface of the phosphor layer. As a result, the image sticking is reduced when the driving method adopted an SRP.

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Transport of space charge between sub-pixels in AC-plasma cell discharge

  • Lee, S.B.;Park, E.Y.;Han, Y.G.;Moon, M.W.;Oh, P.Y.;Song, K.B.;Lee, H.J.;Son, C.G.;Jeong, S.H.;Yoo, N.L.;Hong, Y.J.;Jeong, S.J.;Kim, J.H.;Park, S.O.;Choi, E.H.
    • 한국정보디스플레이학회:학술대회논문집
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    • pp.929-931
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    • 2006
  • In this experiment, we have investigated that the transported space charge between sub-pixels in AC-plasma cell discharge. The test pulse 30 V, $5{\mu}s$ was applied to the address electrodes of neighbor cells of discharge occurred cells. And we have measured the transported space charge between sub-pixels in accordance with the various last sustain pulse widths t(time gap between the rising edges of sustain and test pulses) of 0.2 to $3{\mu}s$. It was observed that the peak value of transported space charge has been shown to be 21.5pC at $1.0{\mu}s$. And the IR peak value have been occured after $0.51{\mu}s$ with respect to sustain voltage.

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Plasma etching behavior of RE-Si-Al-O glass (RE: Y, La, Gd)

  • Lee, Jeong-Gi;Hwang, Seong-Jin;Lee, Seong-Min;Kim, Hyeong-Sun
    • Proceedings of the Materials Research Society of Korea Conference
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    • pp.49.1-49.1
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    • 2010
  • The particle generation during the plasma enhanced process is highly considered as serious problem in the semiconductor manufacturing industry. The material for the plasma processing chamber requires the plasma etching characteristics which are homogeneously etched surface and low plasma etching depth for preventing particulate contamination and high durability. We found that the materials without grain boundaries can prevent the particle generation. Therefore, the amorphous material with the low plasma etching rate may be the best candidate for the plasma processing chamber instead of the polycrystalline materials such as yttria and alumina. Three glasses based on $SiO_2$ and $Al_2O_3$ were prepared with various rare-earth elements (Gd, Y and La) which are same content in the glass. The glasses were plasma etched in the same condition and their plasma etching rate was compared including reference materials such as Si-wafer, quartz, yttria and alumina. The mechanical and thermal properties of the glasses were highly related with cationic field strength (CFS) of the rare-earth elements. We assumed that the plasma etching resistance may highly contributed by the thermal properties of the fluorine byproducts generated during the plasma exposure and it is expected that the Gd containing glass may have the highest plasma etching resistance due to the highest sublimation temperature of $GdF_3$ among three rare-earth elements (Gd, Y and La). However, it is found that the plasma etching results is highly related with the mechanical property of the glasses which indicates the cationic field strength. From the result, we conclude that the glass structure should be analyzed and the plasma etching test should be conducted with different condition in the future to understand the plasma etching behavior of the glasses perfectly.

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