• Title, Summary, Keyword: Plasma

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MICOWAVE PLASMA BURNER

  • Hong, Yong-Cheol;Shin, Dong-Hun;Lee, Sang-Ju;Jeon, Hyung-Won;Lho, Taihyeop;Lee, Bong-Ju
    • Proceedings of the Korean Vacuum Society Conference
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    • pp.95-95
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    • 2010
  • An apparatus for generating flames and more particularly the microwave plasma burner for generating high-temperature large-volume plasma flame was presented. The plasma burner was composed of micvrowave transmission lines, a field applicator, discharge tube, coal and gas supply systems, and a reactor. The plasma burner is operated by injecting coal powders into a 2.45 GHz microwave plasma torch and by mixing the resultant gaseous hydrogen and carbon compounds with plasma-forming gas. We in this work used air, oxygen, steam, and their mixtures as a discharge gas or oxidant gas. The microwave plasma torch can instantaneously vaporize and decompose the hydrogen and carbon containing fuels. It was observed that the flame volume of the burner was more than 50 times that of the torch plasma. The preliminary experiments were carried out by measuring the temperature profiles of flames along the radial and axial directions. We also investigated the characteristics for coal combustion and gasification by analyzing the byproducts from the exit of reactor. As expected, various byproducts such as hydrogen, carbon monoxide, carbon dioxide, hydrogen sulfide, etc. were detected. It is expected that such burner cab be applied to coal gasification, hydrocarbon reforming, industrial boiler of power plants, etc.

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Analysis of Plasma Effects on Seed Germination and Plant Growth

  • Kim, Taesoo;Park, Daehun;Park, Gyungsoon;Choi, Eun Ha
    • Proceedings of the Korean Vacuum Society Conference
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    • pp.253.1-253.1
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    • 2014
  • Plasma technology has been widely used for decontamination, differentiation, and disease treatment. Recently, studies show that plasma has effects on increasing seed germination and plant growth. In spite of increasing number of studies about plasma effects, the interaction between plasma and plants has been rarely informed. In this study, we have analyzed the effects of nonthermal atmospheric pressure plasma on seed germination and growth of coriander (Coriandum sativum), a medicinal plant. We used to Ar, air, and N2 plasma on seed as feeding gases. Plasma was discharged at 0.62 kV, 200 mA, 9.2 W. Seed germination was increased over time when treated with N2 based DBD plasma for exposure times of 30 seconds and 1 minute, everyday. After 7 days, about 80~100% of seeds were germinated in the treatment with N2 based DBD plasma, compared to control (about 40%, only gas treated seeds). In order to elucidate the mechanism of increased germination, we have analyzed characteristics of changes in plant hormones and seed surface structure by SEM.

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Inactivation of Microorganisms in Sewage Using a Pilot Plasma Reactor (Pilot 플라즈마 반응기를 이용한 하수 중 미생물의 불활성화)

  • Kim, Dong-Seog;Park, Young-Seek
    • Journal of Environmental Health Sciences
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    • v.39 no.3
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    • pp.289-299
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    • 2013
  • Objectives: For the field application of the dielectric barrier discharge plasma reactor, scale-up of the plasma reactor is needed. This study investigated the possibility of inactivation of microorganisms in sewage using pilot multi-plasma reactor. We also considered the possibility of degradation of total organic carbon (TOC) and nonbiodegradable matter ($UV_{254}$) in sewage. Methods: The pilot plasma reactor consists of plasma reactor with three plasma modules (discharge electrode and quartz dielectric tube), liquid-gas mixer, high voltage transformers, gas supply equipment and a liquid circulation system. In order to determine the operating conditions of the pilot plasma reactor, we performed experiments on the operation parameters such as gas and liquid flow rate and electric discharge voltage. Results: The experimental results showed that optimum operation conditions for the pilot plasma reactor in batch experiments were 1 L/min air flow rate), 4 L/min liquid circulation rate, and 13 kV electric discharge voltage, respectively. The main operation factor of the pilot plasma process was the high voltage. In continuous operation of the air plasma process, residual microorganisms, $UV_{254}$ absorbance and TOC removal rate at optimal condition of 13 kV were $10^{2.24}$ CFU/mL, 56.5% and 8.6%, respectively, while in oxygen plasma process at 10 kV, residual microorganisms, $UV_{254}$ absorbance and TOC removal rate at optimal conditions were $10^{1.0}$ CFU/mL, 73.3% and 24.4%, respectively. Electric power was increased exponentially with the increase in high voltage ($R^2$ = 0.9964). Electric power = $0.0492{\times}\exp^{(0.6027{\times}lectric\;discharge\;voltage)}$ Conclusions: Inactivation of microorganisms in sewage effluent using the pilot plasma process was done. The performance of oxygen plasma process was superior to air plasma process. The power consumption of oxygen plasma process was less than that of air plasma process. However, it was considered that the final evaluation of air and oxygen plasma must be evaluated by considering low power consumption, high process performance, operating costs and facility expenses of an oxygen generator.

Applications of Plasma Modeling for Semiconductor Industry

  • Efremov, Alexandre
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • pp.3-6
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    • 2002
  • Plasma processing plays a significant role in semiconductor devices technology. Development of new plasma systems, such as high-density plasma reactors, required development of plasma theory to understand a whole process mechanism and to be able to explain and to predict processing results. A most important task in this way is to establish interconnections between input process parameters (working gas, pressure, flow rate, input power density) and various plasma subsystems (electron gas, volume and heterogeneous gas chemistry, transport), which are closely connected one with other. It will allow select optimal ways for processes optimization.

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Plasma for Semiconductor Processing

  • Efremov, Alexandre
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • pp.1-6
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    • 2002
  • Plasma processing of semiconductor materials plays a dominant role in microelectronic technology. During last century, plasma have gone a way from laboratory phenomena to industrial applications due to intensive progress in both scientific and industrial trends. Improvement and development of new experience together with development of plasma theory and plasma diagnostics methods. A most parameters (pressure, flow rate, power density) and various levels of plasma system (energy distribution, volume gas chemistry, transport, heterogeneous effects) to understand the whole process mechanism. It will allow us to choose a correct ways for processes optimization.

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Applications of Plasma Modeling for Semiconductor Industry

  • Efremov, Alexandre
    • Electrical & Electronic Materials
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    • v.15 no.9
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    • pp.10-14
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    • 2002
  • Plasma processing plays a significant role in semiconductor devices technology. Development of new plasma systems, such as high-density plasma reactors, required development of plasma theory to understand a whole process mechanism and to be able to explain and to predict processing results. A most important task in this way is to establish interconnections between input process parameters (working gas, pressure flow rate input power density) and a various plasma subsystems (electron gas, volume and heterogeneous gas chemistry, transport), which are closely connected one with other. It will allow select optimal ways for processes optimizations.

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ECR plasma pretreatment for Ru nucleation enhancement on the TiN film (Ru 핵생성에 대한 ECR plasma 전처리 세정의 효과)

  • 엄태종;신경철;최균석;이종무
    • Proceedings of the Materials Research Society of Korea Conference
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    • pp.120-120
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    • 2003
  • MOCVD법으로 TiN 표면에 Ru을 증착함에 있어서 Ru의 핵생성을 고양시키기 위한 ECR plasma 전처리 세정이 필요하다. 본 연구에서는 Ru 증착시 ECR $H_2O$$_2$, AE Plasma 전처리 세정 효과를 SEM, AES, XRD로 분석하였다. Ru의 핵생성은 ECR H$_2$, Ar Plasma의 노출시간이 증가할수록 향상된 반면, ECR $O_2$ plasma의 경우 노출시간이 증가할수록 핵생성 효과는 감소하였다. H$_2$ plasma 내의 H$_2$ion은 Ti와 NH$_3$를 형성하기 위해서 TiN과 반응하여 TiN을 Ti로 개질 시켰으며, Ar plasma 전처리 세정하는 동안 Ar plasma 내의 Ar ion은 TiN 또는 TiON 표면의 질소와 산소원자를 제거하는 효과를 나타내었다. 그 결과 TiN 표면상에서도 Ru의 핵생성이 쉽게 이루어졌으며 H$_2$, Ar ECR Plasma 전처리 세정에서 RU 핵생성이 향상되는 결과를 얻었다. 세 종류의 plasma중에서 Ar ECR plasma로 전처리 세정한 경우에 가장 높은 Ru 핵생성 밀도를 얻을 수 있었다.

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Effects of Plasma Spray Conditions on Photoelectric Properties of Plasma Sprayed $TiO_2$ Semiconductor ($TiO_2$ 반도체 용사피막의 광전극 특성에 미치는 용사조건의 영향)

  • 박정식;박경채
    • Journal of Welding and Joining
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    • v.12 no.1
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    • pp.94-101
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    • 1994
  • In this study, plasma spraying has been used to produce $TiO_2$ polycrystalline coatings from $TiO_2$ powders. The physical and chemical properties of plasma sprayed $TiO_2$ coatings depend greatly on plasma spraying conditions. The electrical resistivity, oxygen concentration, photocurrent and crystal structure of plasma sprayed $TiO_2$ coating has been studied. The results are as follows: 1. The oxygen loss and electrical conductivity of $TiO_2$ plasma sprayed coatings increased by low pressure and high amount of auxiliary gas, hydrogen in plasma spraying. 2. Oxygen loss increase electrical conductivity, and decrease photocurrent of $TiO_2$ plasma sprayed coatings. 3. Photocurrent of $TiO_2$ plasma sprayed coatings manufactured in atmospheric pressure is higher than that of low pressure.

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In-situ Endpoint Detection for Dielectric Films Plasma Etching Using Plasma Impedance Monitoring and Self-plasma Optical Emission Spectroscopy with Modified Principal Component Analysis

  • Jang, Hae-Gyu;Chae, Hui-Yeop
    • Proceedings of the Korean Vacuum Society Conference
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    • pp.153-153
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    • 2012
  • Endpoint detection with plasma impedance monitoring and self-plasma optical emission spectroscopy is demonstrated for dielectric layers etching processes. For in-situ detecting endpoint, optical-emission spectroscopy (OES) is used for in-situ endpoint detection for plasma etching. However, the sensitivity of OES is decreased if polymer is deposited on viewport or the proportion of exposed area on the wafer is too small. To overcome these problems, the endpoint was determined by impedance signal variation from I-V monitoring (VI probe) and self-plasma optical emission spectroscopy. In addition, modified principal component analysis was applied to enhance sensitivity for small area etching. As a result, the sensitivity of this method is increased about twice better than that of OES. From plasma impedance monitoring and self-plasma optical emission spectroscopy, properties of plasma and chamber are analyzed, and real-time endpoint detection is achieved.

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PROPAGATION PROCESSES OF NEWLY DEVELOPED PLASMA JET IGNITER

  • Ogawa, Masaya;Sasaki, Hisatoshi;Yosgida, Koji;Shoji, Hideo;Tanaka, Hidenori
    • International Journal of Automotive Technology
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    • v.3 no.1
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    • pp.9-16
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    • 2002
  • In plasma jet ignition, combustion enhancement effects occur toward the plasma jet issuing direction. Therefore, when the igniter is attached at the center of a cylindrically shaped combustion chamber, plasma jet should issue toward the round combustion chamber wall. The plasma jet igniter that had an annular circular orifice has been developed. The purpose of this study is to elucidate the relationship between the newly developed plasma Jet igniter configuration and combustion enhancement effects. In this newly developed plasma Jet igniter, flame front wrinkle appears on the flame front and flame propagates rapidly. Plasma Jet influences on the flame propagation far long period when the plasma jet igniter has issuing angle 90 degrees and large cavity volume, because the plasma jet only lasts several ms. However, in the early stage of combustion, flame front area of issuing angle 45 degrees is larger than that of 90 degrees, because the initial flame kernel is formed by the plasma jet.