• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.196.1-196.1
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• 2013

반도체의 device design rule이 shrink 됨에 따라 공정이 난이도가 높아지고 이에 따른 관리가 어려워지고 있다. 특히 미세 particle에 대한 제어의 필요성은 보다 커졌다. 진공 chamber 발생하는 미세 particle의 주요 원인으로는 공정 중 발생한 polymer, chamber 내 부품의 식각 및 스퍼터링에 의한 부산물 등이 있다. Plasma 공정 도중 발생한 particle은 plasma 내 전자에 의해 대전되어 음의 전하량을 가지게 된다. 음의 전하량을 가진 particle은 plasma와 wafer의 경계면에서 형성되는 sheath 때문에 wafer에 도달하지 못하고 plasma 내에 부유하게 된다. 이러한 particle은 plasma가 꺼지게 되면 sheath가 사라지면서 wafer에 도달하게 되고 wafer의 오염을 유발하게 되고 생산 수율을 저하시키는 요인이 된다. 이러한 이유로 최근 plasma 공정에서는 공정 중 발생하는 부유성 particle에 대한 관리가 중요해졌다. 이를 관리하기 위해 plasma를 끄기 전 부유성 particle을 제거하는 방안을 고안하고 평가를 진행하였다. 공정이 끝나고 plasma가 꺼지기 전 plasma를 유지하여 부유성 particle이 wafer에 도달하지 못하는 상태에서 gas purge를 실시한다. 이러한 과정 후 plasma를 끄게 되면 부유성 particle이 wafer에 도달하는 것을 감소시키게 된다. 이번 평가를 통해 부유성 particle에 대해서 대략 20%의 감소 효과를 볼 수 있었다. 이를 토대로 향후 조건 최적화 후 적용 시 particle 감소뿐 만 아니라 수율 향상에도 기여할 수 있을 것이라 기대된다.

• Nuclear Engineering and Technology
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• v.55 no.9
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• pp.3485-3492
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• 2023

One of the major topic of tokamak research is the determination of the magnetic profile due to magnetic coil fields and plasma current by mean of data from magnetic probes. The most practical approach is to use the current filament method, which models the plasma column with multiple current carrying filaments and the total current of these filaments is equal to the plasma current. Determining the plasma boundary in Alvand-U tokamak is the main purpose of this paper. In order to determine the magnetic field profile and plasma boundary, information concerning the magnetic coils, their position, and current is required in the computing code. Then, the plasma shape is determined and finally the plasma boundary is extracted by the code. In the conducted research, we discuss how to determine the plasma boundary and the performance of the computing code for extraction of the plasma boundary. The developed algorithm shows to be effective by running it in the regular pc machine with characteristics of Intel (R) core (TM) i3-10100 CPU @3.60 GHz and 8.00 GB of RAM. Finally, we present results of a test run for computing code using a typical experimental pulse.

• 전기의세계
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• v.19 no.6
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• pp.39-44
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• 1970

본고에서는 plasma전체의 거동에 대해서는 plasma를 전자기체 및 (+)이온기체로서 이루어지는 유체로서 취급을 하면 잘 부합되며 설명되는 경우가 많기 때문에 이 절에서는 plasma를 유체로서 취급하여 기술하기로 한다. 우선 plasma는 열운동을 하고 있는 하전입자의 집단이기때문에 그 거동은 기체운동론에서 사용되는 Baltamann방정식을 기초로 두어서 논하게 된다.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.268-268
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• 2012

Atmospheric pressure microwave induced plasmas are used to excite and ionize chemical species for elemental analysis, for plasma reforming, and for plasma surface treatment. Microwave plasma differs significantly from other plasmas and has several interesting properties. For example, the electron density is higher in microwave plasma than in radio-frequency (RF) or direct current (DC) plasma. Several types of radical species with high density are generated under high electron density, so the reactivity of microwave plasma is expected to be very high [1]. Therefore, useful applications of atmospheric pressure microwave plasmas are expected. The surface characteristics of SUS304 stainless steel are investigated before and after surface modification by microwave plasma under atmospheric pressure conditions. The plasma device was operated by power sources with microwave frequency. We used a device based on a coaxial transmission line resonator (CTLR). The atmospheric pressure plasma jet (APPJ) in the case of microwave frequency (880 MHz) used Ar as plasma gas [2]. Typical microwave Pw was 3-10 W. To determine the optimal processing conditions, the surface treatment experiments were performed using various values of Pw (3-10 W), treatment time (5-120 s), and ratios of mixture gas (hydrogen peroxide). Torch-to-sample distance was fixed at the plasma edge point. Plasma treatment of a stainless steel plate significantly affected the wettability, contact angle (CA), and free energy (mJ/$m^2$) of the SUS304 surface. CA and ${\gamma}$ were analyzed. The optimal surface modification parameters to modify were a power of 10 W, a treatment time of 45 s, and a hydrogen peroxide content of 0.6 wt% [3]. Under these processing conditions, a CA of just $9.8^{\circ}$ was obtained. As CA decreased, wettability increased; i.e. the surface changed from hydrophobic to hydrophilic. From these results, 10 W power and 45 s treatment time are the best values to minimize CA and maximize ${\gamma}$.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1221-1224
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• 2005

The improvement of luminance and luminous efficiency is the one of the most important parts in AC-PDPs. To achieve high luminance and luminous efficiency, high VUV emission efficiency is needed. We measured the emission spectra of the vacuum ultraviolet(VUV) rays in surface discharge AC-PDP with ternary gas mixture of He-Ne-Xe. The influence of He-Ne-Xe gas-mixture ratio on excited $Xe^{\ast}$ resonant atoms and $Xe_2\;^{\ast}$ dimers has been investigated. It is found that luminous efficiency of ternary gas mixture, He-Ne-Xe, is shown to be much higher than that of binary gas mixture of Ne-Xe. For improving discharge luminous efficiency, we have studied VUV emission characteristics of ternary gas mixture, He(50%)-Ne-Xe and He(70%)-Ne-Xe with Xe concentration and filling gas pressure.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.218.1-218.1
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• 2014

In order to measure the absolute plasma density, various probes are proposed and investigated and microwave probes are widely used for its advantages (Insensitivity to thin non-conducting material deposited by processing plasmas, High reliability, Simple process for determination of plasma density, no complicate assumptions and so forth). There are representative microwave probes such as the cutoff probe, the hairpin probe, the impedance probe, the absorption probe and the plasma transmission probe. These probes utilize the microwave interactions with the plasma-sheath and inserted structure (probe), but frequency range used by each probe and specific mechanisms for determining the plasma density for each probe are different. In the recent studies, behaviors of each microwave probe with respect to the plasma parameters of the plasma density, the pressure (the collision frequency), and the sheath width is abundant and reasonably investigated, whereas relative diagnostic characteristics of the probes by a comparative study is insufficient in spite of importance for comprehensive applications of the probes. However, experimental comparative study suffers from spatially different plasma characteristics in the same discharge chamber, a low-reproducibility of ignited plasma for an uncertainty in external discharge parameters (the power, the pressure, the flow rate and so forth), impossibility of independently control of the density, the pressure, and the sheath width as well as expensive and complicate experimental setup. In this paper, various microwave probes are simulated by finite-different time-domain simulation and the error between the input plasma density in FDTD simulations and the measured that by the unique microwave spectrums of each probe is obtained under possible conditions of plasma density, pressure, and sheath width for general low-temperature plasmas. This result shows that the each probe has an optimum applicable plasma condition and reliability of plasma density measurement using the microwave probes can be improved by the complementary use of each probe.

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.05a
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• pp.38.1-38.1
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• 2009

Plasma etching is an essential process for electronic device industries and the particulate contamination during plasma etching has been interested as a big issue for the yield of productivity. The oxynitride glasses have a merit to prevent particulate contamination due to their amorphous structure and plasma etching resistance. The YSiAlON oxynitride glasses with increasing nitrogen content were manufactured. Each oxynitride glasses were fluorine-plasma etched and their plasma etching rate and surface roughness were compared with reference materials such as sapphire, alumina and quartz. The reinforcement mechanism of plasma etching resistance of the YSiAlON glasses studied by depth profiling at plasma etched surface using electron spectroscopy for chemical analysis. The plasma etching rate decreased with nitrogen content and there was no selective etching at the plasma etched surface of the oxynitride glasses. The concentration of silicon was very low due to the generation of SiF4 very volatile byproduct and the concentration of aluminum and yttrium was relatively constant. The elimination of silicon atoms during plasma etching was reduced with increasing nitrogen content because the content of the nitrogen was constant. And besides, the concentration of oxygen was very low on the plasma etched surface. From the study, the plasma etching resistance of the glasses may be improved by the generation of nitrogen related structural groups and those are proved by chemical composition analysis at plasma etched surface of the YSiAlON oxynitride glasses.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.212-212
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• 1999

Ar-O2 분위기의 Plasma 표면 처리된 OPP 의 polymer 위에 약 400$\AA$ 정도로 sputter 코팅된 Al의 부착력에 관하여 연구를 하였다. 금속과 polymer와 같이 성질이 서로 다른 물질이 서로 결합할 때 접착력은 제품의 성능과 신뢰도를 결정하는데 매우 중요한 인자이다. 최근 고분자재료의 표면을 플라즈마 처리 (plasma surface treatment)에 의해 고분자와 금속도포(coating) 층간의 접착력향상에 따라, 증착필름 및 인쇄용 필름 등의 기능도 향상시킬 수 있다. 저온 plasma를 이용한 표면처리는 plastic 재료가 가지고 있는 기본적인 특성을 저해하지 않고, 그 표면 층만을 개량하는 plasma 또는 sputter etching 갚은 electrical discharge 방법은 진공 증착 방식에서 많이 사용되고 있다. 7$\mu\textrm{m}$의 두께 OPP polymer를 10m/min의 속도로 OPP의 표면을 연속 plasma pretreatment를 하였다. 5$\times$10-2torr에서, PEM(Plasma Emission Monitor)를 이용하여 plasma intensity에 따른 Ar/O2비를 변화시키면서 test를 하였다. AFM과 XPS를 이용하여 OPP의 표면분석을 하였다. 이 plasma처리는 기존의 D.C plasma 처리 방식과는 달리 Midium frequency AC voltage hollow cathod 방식으로 plasma를 발생된 high energy plasma 분위기를 만들 수 있다. 이러한 방식은 -cycle일 때 plasma로부터 발생된 전자가 polymer 표면을 bombard 하게 되고, +cycle 일 때 polymer 표면이 cathod 가 되어 active ion에 의해 sputtering 이 된다. 이때 plasma 처리기의 polymer 기판 후면에 magnet를 설치하여 높은 ionization을 발생시켜 처리 효과를 한층 높여 주었다. 이 plasma 처리는 표면 청정화, 표면 etching 이 동시에 행하는 것과 함께 장시간 처리에 의해 표면에서는 미세한 과, C=C기, -C-O-의 극성기의 도입에 의한 표면 개량이 된다는 것을 관찰할 수 있다. OPP polymer 표면을 Ar 100%로 plasma 처리한 경우 C-O, C=O 등의 carbonyl가 발생됨을 알 수 있었다. C-O, C=O 등의 carbynyl polor group이 도입됨에 따라 sputter된 Al의 접착력이 향상됨을 알 수 있으며, TEM 관찰 결과 grain size도 상당히 작아짐을 알 수 있었다.

• Applied Science and Convergence Technology
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• v.24 no.4
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• pp.102-110
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• 2015

Fluid model based numerical analysis is done to simulate a plasma processing system with electrodes at floating potential. $V_f$ is a function of electron temperature, electron mass and ion mass. Commercial plasma fluid simulation softwares do not provide options for floating electrode boundary value condition. We developed a user subroutine in CFD-ACE+ and compared four different cases: grounded, dielectric, zero normal electric field and floating electric potential for a 2D-CCP (capacitively coupled plasma) with a ring electrode.

• Journal of Korean Society for Atmospheric Environment
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• v.16 no.4
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• pp.373-380
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• 2000

A new type of photocatalyst plasma air purification filter for decomposition of some VOCs has been developed. The photocatalyst plasma air purification filter employs the pulsed discharge plasma as an energy source of TiO2. photocatalyst instead of UV light. In closed room(2m3) test removal efficiency of some VOCs was 80∼100% in 15∼24 hours. In the initial step of phptocatalyst plasma reaction. Acetone and Nitromethane etc were detected. But they were completely oxidized to CO2 and H2O.