• International Journal of Clinical Preventive Dentistry
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• v.14 no.4
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• pp.228-234
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• 2018

Objective: The authors have experimented for the artificial plaque removal effect of several kinds of 360 degree rotating head typed tooth-brushes with sonic vibratory actioned by using of automatic machine for horizontal scrub method in order to find the better toothbrush type for plaque removal. Methods: The experiment was conducted on three medium to 360 degree rotating head toothbrushes, a medium sized toothbrush and a medium sized toothbrush, and a flat toothbrush consisting of 30 ordinary toothbrushes. A brushing machine with horizontal scrubbing was manufactured and had variations of the end of the bristle attached to or near the surface of the teeth, a vibrating wave action force of 16,000 or 18,000 cycles per minute, and a working time of 2 or 3 minutes. The tooth removal effect was confirmed by scanning and analyzing images with a computer program after automatic brushing with the machine. The elimination rate results for each group were analyzed using the independent t-test and one-way ANOVA test. Results: It revealed the most in removal effect for the artificial plaque in such conditions as action at near the tooth surface with 18,000 cycle for 3 minutes in case of using A, B, and C tooth-brush. And it has more removal effect rate than for using the plane tooth-brush (p<0.05). Conclusion: It was recommended to develop the 360 degree rotating head and vibratory toothbrush focusing to use near the tooth surface with 18,000 cycles of vibration for 3 minutes at one site of the teeth area.

• Current Applied Physics
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• v.18 no.12
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• pp.1465-1472
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• 2018

The magnetic and optical properties of Ce-doped ZnO systems have been widely demonstrated, but the effects of different strains of Ce-doped ZnO systems remain unclear. To solve these problems, this study identified the effects of biaxial strain on the electronic structure, absorption spectrum, and magnetic properties of Ce-doped ZnO systems by using a generalized gradient approximation + U (GGA + U) method with plane wave pseudopotential. Under unstrained conditions, the formation energy decreased, the system became stable, and the doping process became easy with the increase in the distances between two Ce atoms. The band gap of the systems with different strains became narrower than that of undoped ZnO without strain, and the absorption spectra showed a red shift. The band gap narrowed, and the red shift became weak with the increase of compressive strain. By contrast, the band gap widened, and the red shift became significant with the increase of tensile strain. The red shift was significant when the tensile strain was 3%. The systems with -1%, 0%, and 1% strains were ferromagnetic. For the first time, the magnetic moment of the system with -1% strain was found to be the largest, and the system showed the greatest beneficial value for diluted magnetic semiconductors. The systems with -3%, -2%, 2%, and 3% strains were non-magnetic, and they had no value for diluted magnetic semiconductors. The ferromagnetism of the system with -1% strain was mainly caused by the hybrid coupling of Ce-4f, Ce-5d, and O-2p orbits. This finding was consistent with Zener's Ruderman-Kittel-Kasuya-Yosida theory. The results can serve as a reference for the design and preparation of new diluted magnetic semiconductors and optical functional materials.

• Journal of the Korean Physical Society
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• v.73 no.12
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• pp.1821-1826
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• 2018

Uniformity is a key feature of state-of-the-art infrared focal planed array (IRFPA) and infrared imaging system. Unlike traditional infrared telescope facility, a ground-based infrared radiant characteristics measurement system with an IRFPA not only provides a series of high signal-to-noise ratio (SNR) infrared image but also ensures the validity of radiant measurement data. Normally, a long integration time tends to produce a high SNR infrared image for infrared radiant characteristics radiometry system. In view of the variability of and uncertainty in the measured target's energy, the operation of switching the integration time and attenuators usually guarantees the guality of the infrared radiation measurement data obtainted during the infrared radiant characteristics radiometry process. Non-uniformity correction (NUC) coefficients in a given integration time are often applied to a specified integration time. If the integration time is switched, the SNR for the infrared imaging will degenerate rapidly. Considering the effect of the SNR for the infrared image and the infrared radiant characteristics radiometry above, we propose a-wide-dynamic-range NUC algorithm. In addition, this essasy derives and establishes the mathematical modal of the algorithm in detail. Then, we conduct verification experiments by using a ground-based MWIR(Mid-wave Infared) radiant characteristics radiometry system with an Ø400 mm aperture. The experimental results obtained using the proposed algorithm and the traditional algorithm for different integration time are compared. The statistical data shows that the average non-uniformity for the proposed algorithm decreased from 0.77% to 0.21% at 2.5 ms and from 1.33% to 0.26% at 5.5 ms. The testing results demonstrate that the usage of suggested algorithm can improve infrared imaging quality and radiation measurement accuracy.

• Journal of the Earthquake Engineering Society of Korea
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• v.26 no.1
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• pp.13-22
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• 2022

This study proposes a low-cycle fatigue life derived from measurement points on pipe elbows, which are components that are vulnerable to seismic load in the interface piping systems of nuclear power plants that use seismic isolation systems. In order to quantitatively define limit states regarding leakage, i.e., actual failure caused by low-cycle fatigue, in-plane cyclic loading tests were performed using a sine wave of constant amplitude. The test specimens consisted of SCH40 6-inch carbon steel pipe elbows and straight pipes, and an image processing method was used to measure the nonlinear behavior of the test specimens. The leakage lines caused by low-cycle fatigue and the low-cycle fatigue curves were compared and analyzed using the relationship between the relative deformation angles, which were measured based on each of the measurement points on the straight pipe, and the moment, which was measured at the center of the pipe elbow. Damage indices based on the combination of ductility and dissipation energy at each measurement point were used to quantitatively express the time at which leakage occurs due to through-wall cracking in the pipe elbow.

• Journal of Advanced Navigation Technology
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• v.26 no.1
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• pp.29-34
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• 2022

In this paper, the design of a triple dipole quasi-yagi antenna operating in the 2.45 GHz and 5 GHz wireless LAN frequency bands and the 3.5 GHz WiMAX frequency band was studied. The proposed quasi-Yagi antenna consists of three dipoles connected in series with a V-shaped ground plane. The longest half-bow-tie-shaped dipole resonates in the 2.45 GHz band, whereas the medium-length dipole resonates at 3.5 GHz. The shortest dipole resonates in the 5 GHz band. By adjusting the length and width of the dipoles and the spacings between the dipoles, a triple-band directional antenna operating in the 2.45 GHz, 3.5 GHz, and 5 GHz bands are designed, and fabricated on an FR4 substrate with a size of 45 mm × 55 mm. It was confirmed that the fabricated antenna operates in the designed triple bands of 2.32-2.57 GHz, 3.26-3.69 GHz, and 4.50-6.56 GHz for a voltage standing wave ratio less than 2. Gain is maintained above 3 dBi in the three bands.

• Advances in nano research
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• v.12 no.2
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• pp.213-221
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• 2022

Silicon carbide (SiC) is a binary carbon-silicon compound. In its two-dimensional form, monolayer SiC is composed of a monolayer carbon and silicon atoms constructed as a honeycomb lattice. SiC has recently been receiving increasing attention from researchers owing to its intriguing electronic properties. In this present work, SiC nanoribbons (SiCNRs) are modelled and simulated to obtain accurate electronic properties, which can further guide fabrication processes, through bandgap engineering. The primary objective of this work is to obtain the electronic properties of monolayer SiCNRs by applying numerical computation methods using nearest-neighbour tight-binding models. Hamiltonian operator discretization and approximation of plane wave are assumed for the models and simulation by applying the basis function. The computed electronic properties include the band structures and density of states of monolayer SiCNRs of varying width. Furthermore, the properties are compared with those of graphene nanoribbons. The bandgap of ASiCNR as a function of width are also benchmarked with published DFT-GW and DFT-GGA data. Our nearest neighbour tight-binding (NNTB) model predicted data closer to the calculations based on the standard DFT-GGA and underestimated the bandgap values projected from DFT-GW, which takes in account the exchange-correlation energy of many-body effects.

• The Journal of the Acoustical Society of Korea
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• v.25 no.5
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• pp.229-238
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• 2006

This paper shows the analytic error caused by the inconsistency of the approximation order between the non local boundary condition (NLBC) and the parabolic governing equation. To obtain the analytic error, we first transform the NLBC to the half space domain using plane wave analysis. Then, the analytic error is derived on the boundary between the true numerical domain and the half space domain equivalent to the NLBC. The derived analytic error is physically expressed as the artificial reflection. We examine the characteristic of the analytic error for the grazing angle, the approximation order of the PE or the NLBC. Our main contribution is to present the analytic method of error estimation and the application limit for the high order parabolic equation and the NLBC.

• Journal of the Mineralogical Society of Korea
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• v.30 no.2
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• pp.59-70
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• 2017

$SiO_2$ is one of the most abundant constituents of the Earth's crust and mantle. Probing its electronic structures at high pressures is essential to understand their elastic and thermodynamic properties in the Earth's interior. The in situ high-pressure x-ray Raman scattering (XRS) experiment has been effective in providing detailed bonding transitions of the low-z materials under extreme compression. However, the relationship between the local atomic structures and XRS features at high pressure has not been fully established. The ab initio calculations have been used to overcome such experimental difficulties. Here we report the partial density of states (PDOS) of O atoms and the O K-edge XRS spectra of ${\alpha}-quartz$, ${\alpha}-cristobalite$, and $CaCl_2$-type $SiO_2$ phases calculated using ab initio calculations based on the full-potential linearized augmented plane wave (FP-LAPW) method. The unoccupied O PDOSs of the $CaCl_2$-type $SiO_2$ calculated with and without applying the core-hole effects present significantly distinctive features. The unoccupied O p states of the ${\alpha}-quartz$, ${\alpha}-cristobalite$ and $CaCl_2$-type $SiO_2$ calculated with considering the core-hole effect present similar features to their calculated O K-edge XRS spectra. This confirms that characteristic features in the O K-edge XRS stem from the electronic transition from 1s to unoccupied 2p states. The current results indicate that the core-hole effects should be taken in to consideration to calculate the precise O K-edge XRS features of the $SiO_2$ polymorphs at high pressure. Furthermore, we also calculated O K-edge XRS spectrum for $CaCl_2$-type $SiO_2$ at ~63 GPa. As the experimental spectra for these high pressure phases are not currently available, the current results for the $CaCl_2$-type $SiO_2$ provide useful prospect to predict in situ high-pressure XRS spectra.

• Journal of the Korean Magnetics Society
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• v.18 no.6
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• pp.211-216
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• 2008

The effects of Si impurity on electronic structures and magnetism of bcc Fe are investigated by using a first-principles method by considering spin-orbit coupling. In order to describe the Si impurity, a 27 atomic bcc Fe supercell has been considered. The Kohn-Sham equation was solved in terms of the all-electron full-potential linearized augmented plane wave (FLAPW) method within the generalized gradient approximation (GGA). The effects of spin-orbit coupling were calculated self-consistently by considering spin-diagonal terms based on second variation method. For the ferromagnetic (FM) state without considering SOC, the spin magnetic moment of the Si impurity was calculated to be $-0.143{\mu}B$, while the magnetic moments of Fe atoms were calculated to be $2.214{\mu}B$, $2.327{\mu}B$, and $2.354{\mu}B$ in away from the Si atom, respectively. However, the FM state with considering SOC, the spin magnetic moment of the Si impurity was calculated to be $-0.144{\mu}B$, which is not affected significantly by SOC, but the spin magnetic moments of Fe atoms were calculated $2.189{\mu}B$, $2.310{\mu}B$, and $2.325{\mu}B$, respectively, which are much reduced value compared to those of the FM state without SOC. Comparing the total charge density and spin density, those features are thought to be originated by the screening distortions of the Fe $t_{2g}$ orbital, which can be obtained by considering SOC.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.31-31
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• 2010

The growth of the high-quality GaN epilayers is of significant technological importance because of their commercializedoptoelectronic applications as high-brightness light-emitting diodes (LEDs) and laser diodes (LDs) in the visible and ultraviolet spectral range. The GaN-based heterostructural epilayers have the polar c-axis of the hexagonal structure perpendicular to the interfaces of the active layers. The Ga and N atoms in the c-GaN are alternatively stacked along the polar [0001] crystallographic direction, which leads to spontaneous polarization. In addition, in the InGaN/GaN MQWs, the stress applied along the same axis contributes topiezoelectric polarization, and thus the total polarization is determined as the sum of spontaneous and piezoelectric polarizations. The total polarization in the c-GaN heterolayers, which can generate internal fields and spatial separation of the electron and hole wave functions and consequently a decrease of efficiency and peak shift. One of the possible solutions to eliminate these undesirable effects is to grow GaN-based epilayers in nonpolar orientations. The polarization effects in the GaN are eliminated by growing the films along the nonpolar [$11\bar{2}0$] ($\alpha$-GaN) or [$1\bar{1}00$] (m-GaN) orientation. Although the use of the nonpolar epilayers in wurtzite structure clearly removes the polarization matters, however, it induces another problem related to the formation of a high density of planar defects. The large lattice mismatch between sapphiresubstrates and GaN layers leads to a high density of defects (dislocations and stacking faults). The dominant defects observed in the GaN epilayers with wurtzite structure are one-dimensional (1D) dislocations and two-dimensional (2D) stacking faults. In particular, the 1D threading dislocations in the c-GaN are generated from the film/substrate interface due to their large lattice and thermal coefficient mismatch. However, because the c-GaN epilayers were grown along the normal direction to the basal slip planes, the generation of basal stacking faults (BSFs) is localized on the c-plane and the generated BSFs did not propagate into the surface during the growth. Thus, the primary defects in the c-GaN epilayers are 1D threading dislocations. Occasionally, the particular planar defects such as prismatic stacking faults (PSFs) and inversion domain boundaries are observed. However, since the basal slip planes in the $\alpha$-GaN are parallel to the growth direction unlike c-GaN, the BSFs with lower formation energy can be easily formed along the growth direction, where the BSFs propagate straightly into the surface. Consequently, the lattice mismatch between film and substrate in $\alpha$-GaN epilayers is mainly relaxed through the formation of BSFs. These 2D planar defects are placed along only one direction in the cross-sectional view. Thus, the nonpolar $\alpha$-GaN films have different atomic arrangements along the two orthogonal directions ($[0001]_{GaN}$ and $[\bar{1}100]_{GaN}$ axes) on the $\alpha$-plane, which are expected to induce anisotropic biaxial strain. In this study, the anisotropic strain relaxation behaviors in the nonpolar $\alpha$-GaN epilayers grown on ($1\bar{1}02$) r-plane sapphire substrates by metalorganic chemical vapor deposition (MOCVO) were investigated, and the formation mechanism of the abnormal zigzag shape PSFs was discussed using high-resolution transmission electron microscope (HRTEM).