• 마이크로전자및패키징학회지
• /
• 제24권4호
• /
• pp.39-46
• /
• 2017

본 연구는 평판형 히터용 금속방열판상의 세라믹 절연층 제조, 즉 절연성 금속기판에 관한 것이다. 반도체나 디스플레이의 열처리 공정 등에 사용되는 평판형 히터를 제조함에 있어서, 온도 균일도를 높이기 위해 금속 방열판으로서 열전도율이 높고, 비교적 가벼우며, 가공성 좋은 알루미늄 합금 기판이 선호된다. 이 알루미늄 기판에 발열 회로 패턴을 형성하기 위해서는 금속 기판에 절연층으로서 고온 안정성이 우수한 세라믹 유전체막을 코팅하여야 한다. 금속 기판상에 세라믹 절연층을 형성함에 있어서 가장 빈번히 발생하는 첫 번째 문제는 금속과 세라믹의 이종재료 간의 큰 열팽창계수 차이와 약한 결합력에 의한 층간박리 및 균열발생이다. 두 번째 문제는 절연층의 소재 및 구조적 결함에 따른 절연파괴이다. 본 연구에서는 이러한 문제점 해소를 위해 금속소재 기판과 세라믹 절연층 사이에 완충층을 도입하여 이들 간의 기계적 매칭과 접합력 개선을 도모하였고, 다중코팅 방법을 적용하여 절연막의 품질과 내전압 특성을 개선하고자 하였다.

• 한국정밀공학회:학술대회논문집
• /
• 한국정밀공학회 1995년도 추계학술대회 논문집
• /
• pp.1093-1097
• /
• 1995

A micro ion drag pump with planar electrodes on a glass substrate is fabricated and tested. the pump consisted of a 2- dimensional electrode pair array is driven by DC voltage using unipolar conduction. Ethy alcohol is pumped in both directions, and the flow rate and the pressure are measured, in channels of depth 100 .mu m or 200 .mu. m and width fixed at 3mm. It is found that the pump could be fabricated easily and at lower cost than the micro ion drag pumps previously investigated.

• 전자공학회논문지A
• /
• 제31A권1호
• /
• pp.71-76
• /
• 1994

Schottky diodes have been fabricated using the SDB wafer, and their characteristics have been investigated. For comparison, conventional planar and etched most structure were made on the same substrate. The ideality factor and barrier height of the fabricated devices are found to be 1.03 and 0.77eV, respectively. Breakdown volttge of the etched mesa Schottky diode has been increased to 180V. whereas it is 90V for the planar diode. Schottky diode with an etched mesa exhibits twice improvement in breaktown voltage.

• ETRI Journal
• /
• 제34권3호
• /
• pp.454-457
• /
• 2012

A miniaturized planar digital video broadcasting terrestrial (DVB-T) antenna, which is composed of a patterned helical line, an open stub, and an impedance matching circuit on an FR4 (${\varepsilon}_r$=4.4) substrate for portable media player applications, is presented in this letter. The antenna has monopole-like, omni-directional radiation characteristics and a wide impedance bandwidth (VSWR<3) in the DVB-T band from 174 MHz to 230 MHz at the VHF band.

• JSTS:Journal of Semiconductor Technology and Science
• /
• 제5권2호
• /
• pp.113-119
• /
• 2005

4H-SiC planar MESFETs were fabricated using ion-implantation on semi-insulating substrate without recess gate etching. A modified RCA method was used to clean the substrate before each procedure. A thin, thermal oxide layer was grown to passivate the surface and then a thick field oxide was deposited by CVD. The fabricated MESFET showed good contact properties and DC/RF performances. The maximum oscillation frequency of 34 GHz and the cut-off frequency of 9.3 GHz were obtained. The power gain was 10.1 dB and the output power of 1.4 W was obtained for 1 mm-gate length device at 2 GHz. The fabricated MESFETs showed the charge trapping-free characteristics and were characterized by the extracted small-signal equivalent circuit parameters.

• 한국인터넷방송통신학회논문지
• /
• 제8권5호
• /
• pp.51-56
• /
• 2008

본 논문에서는 이동 무선 통신에 적합한 인쇄형 평면(printed planar) 안테나를 제안한다. 인쇄형 평면 안테나는 간단성, 낮은 가격, 가벼움 등으로 제작이 간단하기 때문에 통신 시스템에 널리 사용된다. 기존의 페치 안테나는 이동 수신자에게 적용하기 위해서는 너무 큰 표면의 사용이 요구된다. 인쇄형 평면 안테나를 사용하여 사이즈를 줄일지라도 상당한 크기의 대역폭이 요구된다. 이러한 단점들을 해결하기 위해서는 기판의 두께는 커야하며, 기판의 유전 상수는 작아야 한다. 이러한 문제점을 해결하기 위해서 본 연구에서는 간단한 형태의 인쇄형 평면 안테나를 제안하고 안테나 크기와 동작 주파수에 의존하는 최적의 입력 임피던스를 보여준다. 제안된 인쇄형 평면 안테나의 성능평가는 프로토타입 안테나 모델을 사용하여 분석한다.

• Bulletin of the Korean Chemical Society
• /
• 제32권spc8호
• /
• pp.2941-2948
• /
• 2011

A nanogap formed by a metal nanoparticle and a flat metal substrate is one kind of "hot site" for surface-enhanced Raman scattering (SERS). The characteristics of a typical nanogap formed by a planar Au and either an Au and Ag nanoparticle have been well studied using 4-aminobenzenethiol (4-ABT) as a probe. 4-ABT is, however, an unusual molecule in the sense that its SERS spectral feature is dependent not only on the kinds of SERS substrates but also on the measurement conditions; thus further characterization is required using other adsorbate molecules such as 1,4-phenylenediisocyanide (1,4-PDI). In fact, no Raman signal was observable when 1,4-PDI was selfassembled on a flat Au substrate, but a distinct spectrum was obtained when 60 nm-sized Au or Ag nanoparticles were adsorbed on the pendent -NC groups of 1,4-PDI. This is definitely due to the electromagnetic coupling between the localized surface plasmon of Au or Ag nanoparticle with the surface plasmon polariton of the planar Au substrate, allowing an intense electric field to be induced in the gap between them. A higher Raman signal was observed when Ag nanoparticles were attached to 1,4-PDI, irrespective of the excitation wavelength, and especially the highest Raman signal was measured at the 632.8 nm excitation (with the enhancement factor on the order of ${\sim}10^3$), followed by the excitation at 568 and 514.5 nm, in agreement with the finite-difference timedomain calculation. From a separate potential-dependent SERS study, the voltage applied to the planar Au appeared to be transmitted without loss to the Au or Ag nanoparticles, and from the study of the effect of volatile organics, the voltage transmission from Au or Ag nanoparticles to the planar Au also appeared as equally probable to that from the planar Au to the Au or Ag nanoparticles in a nanogap electrode. The response of the Au-Ag nanogap to the external stimuli was, however, not the same as that of the Au-Au nanogap.

• ETRI Journal
• /
• 제40권3호
• /
• pp.389-395
• /
• 2018

A novel class of planar metamaterial unit-cells consisting of a peace logo pattern is presented. A significant advantage of the proposed peace-logo planar metamaterial (PLPM) unit-cell over existing designs is its tunability, simplicity, and compatibility with microstrip structures. The theoretical analysis is founded on the famous transmission-line theory for the metamaterial concept. Then, the tunable dual-band two-sided PLPM (TSPLPM) unit-cell is designed by printing a similar PLPM pattern at the bottom of the substrate. The influence of the bottom PLPM pattern on the resonance frequencies of the unit-cell was analyzed by performing numerical simulations using CST Microwave Studio 2017 and HFSSv15 simulators. The results of the numerical simulations demonstrated that the proposed TSPLPM has the ability to control the resonance frequencies over 50 GHz-75 GHz for millimeter-wave applications.

• ETRI Journal
• /
• 제17권2호
• /
• pp.1-10
• /
• 1995

We propose a novel planar optical interconnection scheme for 100 Gb/s optical packet address detection, which consists of waveguide grating couplers and a diffractive microlens integrated on a glass substrate 3-dimensionally. Length and duty cycle of the grating couplers have been determined on the bases of the ray-optic propagation-mode analysis in a slab waveguide and of the rigorous coupled-wave diffraction analysis for out-coupled radiation-modes. The 3-dimensionally integrated planar optics makes it possible to connect each address bit-signals of $TE_ 0-waveguide$ mode to the detector with a power uniformity of 6.4 % and a total coupling efficiency of 72.3 %.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
• /
• pp.172-173
• /
• 2012

Currently GaN based LED is known to show high internal or external efficiency at low current range. However, this LED operation occurs at high current range and in this range, a significant performance degradation known as 'efficiency droop' occurs. Auger process, carrier leakage process, field effect due to lattice mismatch and thermal effects have been discussed as the causes of loss of efficiency, and these phenomena are major hindrance in LED performance. In order to investigate the main effects of efficiency loss and overcome such effects, it is essential to obtain relative proportion of measurements of internal quantum efficiency (IQE) and various radiative and nonradiative recombination processes. Also, it is very important to obtain radiative and non-radiative recombination times in LEDs. In this research, we measured the IQE of InGaN/GaN multiple quantum wells (MQWs) LEDs with PSS and Planar substrate using modified ABC equation, and investigated the physical mechanism behind by analyzing the emission energy, full-width half maximum (FWHM) of the emission spectra, and carrier recombination dynamic by time-resolved electroluminescence (TREL) measurement using pulse current generator. The LED layer structures were grown on a c-plane sapphire substrate and the active region consists of five 30 ${\AA}$ thick In0.15Ga0.85N QWs. The dimension of the fabricated LED chip was $800um{\times}300um$. Fig. 1. is shown external quantum efficiency (EQE) of both samples. Peak efficiency of LED with PSS is 92% and peak efficiency of LED with planar substrate is 82%. We also confirm that droop of PSS sample is slightly larger than planar substrate sample. Fig. 2 is shown that analysis of relation between IQE and decay time with increasing current using TREL method.