• Title/Summary/Keyword: Planar Circuits

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Development of 1×16 Thermo-optic MZI Switch Using Multimode Interference Coupler (다중모드 간섭현상을 이용한 1×16 마하젠더 스위치 개발)

  • Kim, Sung-Won;Hong, Jong-Kyun;Lee, Sang-Sun
    • Korean Journal of Optics and Photonics
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    • v.17 no.5
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    • pp.469-474
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    • 2006
  • A $1{\times}16$ thermo-optic switch with small excess loss using multimode interference(MMI) couplers is designed, fabricated, and measured. This paper introduces the proposed $1{\times}16$ thermo-optic switch, and discusses the measurement results. The $1{\times}16$ thermo-optic switch is farmed as 4-stage which consists of 15 unit devices. The unit devices are the $2{\times}2$ thermo-optic switches with Mach-Zehnder interferometer(MZI) structure. The characteristics of the $1{\times}16$ thermo-optic switch depends strongly on each unit device. The unit deviceconsists of two 3-dB general interference MMI couplers and two single mode waveguide arms as a phase shifter. First of all, the 3-dB optical splitter and $2{\times}2$ MZI thermo-optic switch have been tested to confirm the characteristics of the unit devices of the $1{\times}16$ MZI thermo-optic switch. Using the measurement results of the unit devices, the $1{\times}16$ MZI thermo-optic switch can be produced with better characteristics. The resultant structure of the MMI coupler with the optical light source of wavelength of 1550nm for the $1{\times}16$ thermo-optic switch is that the width and the optimized length are $25{\mu}m\;and\;1580{\mu}m$, respectively. The smallest excess loss fur the unit device is -0.5dB and the average excess loss is -0.7dB.

Electrochemical Characterization of Anti-Corrosion Film Coated Metal Conditioner Surfaces for Tungsten CMP Applications (텅스텐 화학적-기계적 연마 공정에서 부식방지막이 증착된 금속 컨디셔너 표면의 전기화학적 특성평가)

  • Cho, Byoung-Jun;Kwon, Tae-Young;Kim, Hyuk-Min;Venkatesh, Prasanna;Park, Moon-Seok;Park, Jin-Goo
    • Journal of the Microelectronics and Packaging Society
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    • v.19 no.1
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    • pp.61-66
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    • 2012
  • Chemical Mechanical Planarization (CMP) is a polishing process used in the microelectronic fabrication industries to achieve a globally planar wafer surface for the manufacturing of integrated circuits. Pad conditioning plays an important role in the CMP process to maintain a material removal rate (MRR) and its uniformity. For metal CMP process, highly acidic slurry containing strong oxidizer is being used. It would affect the conditioner surface which normally made of metal such as Nickel and its alloy. If conditioner surface is corroded, diamonds on the conditioner surface would be fallen out from the surface. Because of this phenomenon, not only life time of conditioners is decreased, but also more scratches are generated. To protect the conditioners from corrosion, thin organic film deposition on the metal surface is suggested without requiring current conditioner manufacturing process. To prepare the anti-corrosion film on metal conditioner surface, vapor SAM (self-assembled monolayer) and FC (Fluorocarbon) -CVD (SRN-504, Sorona, Korea) films were prepared on both nickel and nickel alloy surfaces. Vapor SAM method was used for SAM deposition using both Dodecanethiol (DT) and Perfluoroctyltrichloro silane (FOTS). FC films were prepared in different thickness of 10 nm, 50 nm and 100 nm on conditioner surfaces. Electrochemical analysis such as potentiodynamic polarization and impedance, and contact angle measurements were carried out to evaluate the coating characteristics. Impedance data was analyzed by an electrical equivalent circuit model. The observed contact angle is higher than 90o after thin film deposition, which confirms that the coatings deposited on the surfaces are densely packed. The results of potentiodynamic polarization and the impedance show that modified surfaces have better performance than bare metal surfaces which could be applied to increase the life time and reliability of conditioner during W CMP.