• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.14 no.10
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• pp.1044-1051
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• 2003

In this paper, a compact planar microwave duplexer on the high dielectric substrate is presented. As the Ba(Mg$\sub$1/3/Ta$\sub$2/3/)O$_3$(BMT) has good dielectric performances with a high dielectric constant of $\varepsilon$$\sub$r/=23, it is suitable to apply to a printed circuit board fur reducing its circuit size. The BMT substrate is fabricated by using a tape casting fabrication process, and circuit patterns are screen-printed on it by suing silver paste. The open-loop ring type duplexer is designed and implemented on the BMT substrate, and it achieves the smaller size by 80% than one on a commercial substrate($\varepsilon$$\sub$r/=6.15) without degenerating its performance. Therefore the proposed BMT substrate has provided the miniaturization of the duplexer, moreover it can make a contribution towards reducing the size of microwave passive circuits.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.11 no.4
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• pp.514-522
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• 2000

In this thesis, a two-dimensional active phased array antenna without phase shifter is studied for two-dimensional beam scanning. A designed two-dimensional oscillator-type active array antenna, radiation elements and the oscillator circuits were combined with via-hole and coupled by slot on the opposite ground plane. The operating characteristics are analyzed and experimentally demonstrated , The two-dimensional $4\times4$ elements were designed for the proper coupling strengths and coupling phases by adjusting the width, length and offset position of slot-lines. The fabricated active phased array antenna shows the beam shift characteristics capable of scanning from $-17^{\circ}$ to $18^{\circ}$ with respect to broadside in one dimension, from $-5^{\circ}$ to $10^{\circ}$ in two dimension. The experimental results show that it is possible to use the oscillator-type active phased array antenna as a two-dimensional planar array antenna.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.13 no.10
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• pp.1005-1016
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• 2002

In this paper, a 2 GHz tapered shape of multiport power divider/combiner modified from the model published by [10] and adopted PBG(Photonic Band Gap) structure is proposed. Parameters determining electrical property of the circuit structure have been analyzed by HFSS simulation. For input matching, balance of output signals and phase linearity at each output port, one circular hole has been etched out on the circuit surface. 1:2 and 1:3 power dividers/combiners designed by this study have been compared with the same circuits designed by the method of [10] in terms of S-parameters. As a result, it has been found that tile modified structure and PBG of power divider/combiner have improved return loss more than 20 dB and another 18 dB. respectively, at 2 GHz.

• Journal of Advanced Navigation Technology
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• v.6 no.4
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• pp.279-290
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• 2002

In this paper, tapered shape of multiport power divider/combiner modified for 2 GHz range from the model published by [10] is proposed. Parameters determining electrical property of the circuit structure have been analyzed by HFSS simulation. For input matching, balance of output signals and phase linearity at each output port, one circular hole has been etched out on the circuit surface. 1:2 and 1:3 power dividers/combiners designed by this study have been compared with the same circuits designed by the method of [10] in terms of S-parameters. As a result, it has been found that the modified structure of power divider/combiner have improved return loss more than 20 dB and another 18 dB, respectively, at 2 GHz.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.26 no.5
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• pp.682-687
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• 2022

In this paper, the research results on monolithic three-dimensional integrated-circuit (M3DICs) stacked with tunneling field effect transistors (TFETs) are introduced. Unlike metal-oxide-semiconductor field-effect transistors (MOSFETs), TFETs are designed differently from the layout of symmetrical MOSFETs because the source and drain of TFET are asymmetrical. Various monolithic 3D inverter (M3D-INV) structures and layouts are possible due to the asymmetric structure, and among them, a simple inverter structure with the minimum metal layer is proposed. Using the proposed M3D-INV, this M3D logic gates such as NAND and NOR gates by sequentially stacking TFETs are proposed, respectively. The simulation results of voltage transfer characteristics of the proposed M3D logic gates are investigated using mixed-mode simulator of technology computer aided design (TCAD), and the operation of each logic circuit is verified. The cell area for each M3D logic gate is reduced by about 50% compared to one for the two-dimensional planar logic gates.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.37 no.4
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• pp.420-426
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• 2024

This study proposes an innovative methodology for developing flexible printed circuit boards (FPCBs) capable of conforming to three-dimensional shapes, meeting the increasing demand for electronic circuits in diverse and complex product designs. By integrating a traditional flat plate-based fabrication process with a subsequent three-dimensional thermal deformation technique, we have successfully demonstrated an FPCB that maintains stable electrical characteristics despite significant shape deformations. Using a modified polyimide substrate along with Ag flake-based conductive ink, we identified optimized process variables that enable substrate thermal deformation at lower temperatures (~130℃) and enhance the stretchability of the conductive ink (ε ~30%). The application of this novel FPCB in a prototype 3D-shaped sensor device, incorporating photosensors and temperature sensors, illustrates its potential for creating multifunctional, shape-adaptable electronic devices. The sensor can detect external light sources and measure ambient temperature, demonstrating stable operation even after transitioning from a planar to a three-dimensional configuration. This research lays the foundation for next-generation FPCBs that can be seamlessly integrated into various products, ushering in a new era of electronic device design and functionality.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.20 no.8
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• pp.714-720
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• 2009

In this paper, design and the implementation method of a band-tunable ultra-wideband planar doubler are described Microstrip-to-CPS(balun) transition and Microstrip-to-CPW transition are respectively used for input/output matching circuits for the doubler. The Input balun structure allows to apply diode bias, and the doubler output frequency is tunable by changing the diode bias voltage. With the bias voltage of -0.6 V, the measured operating frequency band of the implemented doubler is $10{\sim}20$ GHz, with the bias voltage of $-0.2{\sim}-0.4$ V, the operating frequency band is $10{\sim}30$ GHz, and with 0 V bias, the operating frequency band is $20{\sim}30$ GHz. The doubler provides conversion loss of less than 15 dB and fundamental frequency suppression of 30 dB.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.14 no.10
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• pp.1071-1078
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• 2003

In this paper, the planar, compact, and broadband phased array antenna system for IMT-2000 applications has been investigated. Two methods far designing a low-cost and low-complex beam-farming network are proposed. First, a new compact and broadband phase shifter with continuously controlled phase bits is designed by using parallel coupled lines. Second, its equivalent phase delay line is suggested to be capable of replacing the complex phase shifter with a reference phase bit on a phased array antenna. For the purpose of achieving the broadband system, in addition to the broadband phase shifter, a wide-slot antenna with a ground reflector is utilized as an element antenna. Therefore, the phased array antenna system has achieved compact size, broad bandwidth, and wide steering angle, although it has low complexity and low fabrication cost. The 3${\times}$1 phased array antenna system has a compact size of 1.6 λ${\times}$ l.6 λ, which is the sufficient ground plane of the wide-slot antenna. Experimental results present that the S$\_$11/ has less than 15 dB within the band and its radiation patterns on an E-plane have the capability of steering an antenna beam from -29$^{\circ}$to +30$^{\circ}$.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.162-162
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• 1999

초고주파 집적회로의 핵심소자로 각광을 받고 있는 GaAs MESFET(MEtal-emiconductor)은 게이트 형성 공정이 가장 중요하며, WNx 내화금속을 이용한 planar 게이트 구조의 경우 임계전압(Vth:threshold voltage)의 균일도가 우수할 뿐만 아니라 특히 Side-wall을 이용한 self-align 게이트는 소오스 저항을 줄일 수 있어 고성능의 소자 제작을 가능하게 한다.(1) 본 연구의 핵심이 되는 Side-wall을 형성하기 위하여 PECVD법에 의한 SiOx 박막을 증착하고, 건식식각법을 이용하여 SiOx side-wall을 형성하였다. 이 공정을 이용하여 소오스 저항이 낮고 임계전압의 균일도가 우수한 고성능의 self-aligned gate MESFET을 제작하였다. 3inch GaAs 기판상에 이온주입법에 의한 채널 형성, d.c. 스퍼터링법에 의한 WNx 증착, PECVD법에 의한 SiOx 증착, MERIE(Magnetic Enhanced Reactive Ion Etcing)에 의한 Side-wall 형성, LDD(Lightly Doped Drain)와 N+ 이온주입, 그리고 RTA(Rapid Thermal Annealing)를 사용하여 활성화 공정을 수행하였다. 채널은 40keV, 4312/cm2로, LDD는 50keV, 8e12/cm2로 이온주입하였고, 4000A의 SiOx를 증착한 후 2500A의 Side-wall을 형성하였다. 옴익 접촉은 AuGe/Ni/Au 합금을 이용하였고, 소자의 최종 Passivation은 SiNx 박막을 이용하였다. 제작된 소자의 전기적 특성은 hp4145B parameter analyzer를 이용한 전압-전류 측정을 통하여 평가하였다. Side-wall 형성은 0.3$\mu\textrm{m}$ 이상의 패턴크기에서 수직으로 잘 형성되었고, 본 연궁에서는 게이트 길이가 0.5$\mu\textrm{m}$인 MESFET을 제작하였다. d.c. 특성 측정 결과 Vds=2.0V에서 임계전압은 -0.78V, 트랜스컨덕턴스는 354mS/mm, 그리고 포화전류는 171mA/mm로 평가되었다. 특히 본 연구에서 개발된 트랜지스터의 게이트 전압 변화에 따른 균일한 트랜스 컨덕턴스의 특성은 RF 소자로 사용할 때 마이크로 웨이브의 왜곡특성을 없애주기 때문에 균일한 신호의 전달을 가능하게 한다. 0.5$\mu\textrm{m}$$\times$100$\mu\textrm{m}$ 게이트 MESFET을 이용한 S-parameter 측정과 Curve fitting 으로부터 차단주파수 fT는 40GHz 이상으로 평가되었고, 특히 균일한 트랜스컨덕턴스의 경향과 함께 차단주파수 역시 게이트 바이어스, 즉 소오스-드레스인 전류의 변화에 따라 균일한 값을 보였다. 본 연구에서 개발된 Side-wall 공정은 게이트 길이가 0.3$\mu\textrm{m}$까지 작은 경우에도 사용가능하며, WNx self-align gate MEESFET은 낮은 소오스저항, 균일한 임계전압 특성, 그리고 높고 균일한 트랜스 컨덕턴스 특성으로 HHP(Hend-Held Phone) 및 PCS(Personal communication System)와 같은 이동 통신용 단말기의 MMICs(Monolithic Microwave Integrates Circuits)의 제작에 활용될 것으로 기대된다.

• Journal of Sensor Science and Technology
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• v.10 no.1
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• pp.1-8
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• 2001

Conventional microgyroscopes of vibrating type require resonant frequency tuning of the driving and sensing modes to achieve high sensitivity. These tuning conditions depend on each fabricated microgyroscopes, even though the microgyroscopes are identically designed. A new micromachined resonator, which is applicable to microgyroscopes with self-toning characteristics, is presented. Since the laterally driven two degrees of freedom (2DOF) resonator was designed as a symmetric structure with identical stiffness in two orthogonal axes, the resonator is applicable to vibrating microgyroscopes, which do not need mode tuning. A dynamic model of the resonator was derived considering gyroscopic application. The dynamic model was evaluated by experimental comparison with fabricated resonators. The microgyroscopes were fabricated using a simple 2-mask-process of a single polysilicon layer deposited on an insulator layer. The feasibility of the resonator as a vibrating microgyroscopes with self-tuning capability is discussed. The fabricated resonators of a particular design have process-induced non-uniformities that cause different resonant frequencies. For several resonators, the standard deviations of the driving and sensing frequencies were as high as 1232Hz and 1214Hz, whereas the experimental average detuning frequency was 91.75Hz. The minimum detuned frequency was 68Hz with $0.034mVsec/^{\circ}$ sensitivity. The sensitivity of the microgyroscopes was low due to process-induced non-uniformity; the angular rate bandwidth, however, was wide. This resonator could be successfully applicable to a vibrating microgyroscopes with high sensitivity, if improvements in uniformity of the fabrication process are achieved. Further developments in improved integrated circuits are expected to lower the noise level even more.