• Proceedings of the IEEK Conference
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• 2003.07b
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• pp.1125-1128
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• 2003

This paper presents the design method of a Colpitts type oscillator with coplanar waveguide(CPW) structures in the range of Ka-band frequency for transmitter and receiver modules. Series short stubs of CPW patterns provide inductances and capacitances in the range of Ka-band which can be expressed as a CLC-$\pi$ equivalent circuit. The experimentation has employed ro4003 substrates as a CPW substrate which has a dielectric constant of 3.38 and a signal and ground space of 100um. A method of momentum simulation for the CPW patterns has performed with an ADS software tool of Hewlett-Packard Corp. Inductance and capacitance circuits of a Colpitts oscillator was interconnected to a MESFET with CPW bend structures of including the input and output impedance matching circuits of the active transistor. Circuit parameters for impedance matching were determined through the network conversion to the equivalent length of CPW transmission lines by using T-network 1 $\pi$-network conversion circuit. A Colpitts oscillator was fabricated on the substrate of a area of 8.5mm x 17.4mm with a MESFET of Fujitsu FMM5704X and CPW series short stubs. The design suggested the possibility of realizing oscillators on a planar surface for the wireless system of tansmitter and receiver modules in the frequency range of 30GHz

• Journal of Advanced Marine Engineering and Technology
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• v.40 no.9
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• pp.805-811
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• 2016

This paper proposes an estimation algorithm of phase currents of inverter systems with the planar bus bars for brush-less DC (BLDC) motors. The planar bus bar can improve the characteristic of the EMC(Electro-Magnetic Compatibility). In these inverters, a single current sensor of the dc-link measures the sum of a smooth capacitor current and phase currents of brush-less DC motor. Thus, it is essential to extract phase currents from the measured single current to control BLDC motor. Therefore, in this paper, the phase current is estimated by analyzing equivalent circuits of the BLDCM in ON and OFF periods of switching elements. The usefulness of the proposed algorithm is verified through experimental results.

• Journal of Sensor Science and Technology
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• v.30 no.5
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• pp.342-348
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• 2021

For the characterization or failure analysis of electronic devices such as PCB (printed circuit boards), the most common method is the measurement of voltage waveforms with an oscilloscope. However, because there are many types of problems that cannot be detected by voltage waveform analysis, several other methods such as X-ray transmission, infrared imaging, or eddy current measurement have been applied for these analyses. However, these methods have also been limited to general analyses because they are partially useful in detecting physical defects, such as disconnections or short circuits. Fundamentally current waveform measurements during the operation of electronic devices need to be performed, however, commercially available current sensors have not yet been developed, particularly for applications in highly integrated PCB products with sub-millimeter fine pitch. In this study, we developed a highly sensitive PHR (planar hall resistance) magnetic sensor for application in highly integrated PCBs. The developed magnetic sensor exhibited sufficient features of an ultra-small size of less than 340 ㎛, magnetic field resolution of 10 nT, and current resolution of 1 mA, which can be applicable for PCB analyses. In this work, we introduce the development process of the magnetic sensing probe and its characteristic results in detail, and aim to extend this pin-type current probe to applications such as current distribution imaging of PCBs.

• Journal of Electrical Engineering and information Science
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• v.3 no.2
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• pp.239-244
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• 1998

Piezoelectric pressure sensors and pyroelectric infrared detectors based on ZnO thin film have been integrated with GaAs metal-semiconductor field effect transistor (MESFET) amplifiers. Surface micromachining techniques have been applied in a GaAs MESFET process to form both microsensors and electronic circuits. The on-chip integration of microsensors such as pressure sensors and infrared detectors with GaAs integrated circuits is attractive because of the higher operating temperature up to 200 oC for GaAs devices compared to 125 oC for silicon devices and radiation hardness for infrared imaging applications. The microsensors incorporate a 1${\mu}$m-thick sputtered ZnO capacitor supported by a 2${\mu}$m-thick aluminum membrane formed on a semi-insulating GaAs substrate. The piezoelectric pressure sensor of an area 80${\times}$80 ${\mu}$m2 designed for use as a miniature microphone exhibits 2.99${\mu}$V/${\mu}$ bar sensitivity at 400Hz. The voltage responsivity and the detectivity of a single infrared detector of an area 80${\times}$80 $\mu\textrm{m}$2 is 700 V/W and 6${\times}$108cm$.$ Hz/W at 10Hz respectively, and the time constant of the sensor with the amplifying circuit is 53 ms. Circuits using 4${\mu}$m-gate GaAs MESFETs are fabricated in planar, direct ion-implanted process. The measured transconductance of a 4${\mu}$m-gate GaAs MESFET is 25.6 mS/mm and 12.4 mS/mm at 27 oC and 200oC, respectively. A differential amplifier whose voltage gain in 33.7 dB using 4${\mu}$m gate GaAs MESFETs is fabricated for high selectivity to the physical variable being sensed.

• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.1513_1514
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• 2009

This paper reports on a fabrication of novel substrate integrated waveguide (SIW)-based shielded stripline applicable to the broadband transverse electromagnetic (TEM) single-mode propagation. We suggested a structure for half-SIW and half-shielded stripline, which combined through the benzocyclobutene (BCB) bonding layer. The electrical interconnection between the sidewall of anisotropic wet-etched silicon and patterned BCB layers is measured subsequent to the metalization on the side wall. The proposed SIW-based shielded stripline has great potential in terms of simple fabrication, integration with planar circuits and monolithic system fabricated on a SIW structure.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.25 no.3
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• pp.40-49
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• 2011

This paper presents novel circuit topology of half-bridge soft-switching PWM inverter type DC-DC high power converter for DC bus feeding power plants. The proposed DC-DC power converter is composed of a typical voltage source-fed, half-bridge high frequency PWM inverter with a high frequency planar transformer link PWM control scheme and parallel capacitive lossless snubbers. The operating principle of the new DC-DC converter treated here is described by using switching mode-equivalent circuits, together with its unique features. All the active power switches in the half-bridge arms and input DC bus lines can achieve ZCS turn-on and ZVS turn-off commutation transitions. The total turn-off switching losses of the power switches can be significantly reduced. As a result, high switching frequency IGBTs can actually be selected in the frequency range of 40[kHz] under the principle of soft-switching. The performance evaluations of the experimental setup are illustrated practically.

• 한국정보통신설비학회:학술대회논문집
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• 2002.08a
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• pp.21-23
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• 2002

In millimeter wave applications, it is often necessary to use transitions between waveguide and planar circuits. Finline structures can be used effectively to this purpose. In multilayered case, it is necessary to analyze the structure with numerical method such as spectral domain immittance method. The design procedure uses tile cutoff frequency for each taper width. The dispersion data in a single layer are compared with those in literature. The performance of the designed finline taper is verified with the FEM simulation using HFSS.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.04a
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• pp.239-244
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• 1997

A hair-pin shaped microstrip-line resonator and a dielectric resonator for injection-locked oscillators have been designed and fabricated for the comparative studying of their characteristics. In general, a commonly used dielectric resonator shows lower phase noise value than hair-pin resonator in the free-running mode. In the injection-locked mode, however, a hair-pin resonator is superior to the dielectric resonator; the wider tuning range, the 22% improved locking bandwidth, the lower noise effect, the short term stability, and the higher power level. The planar structure of a hair-pin shaped microstrip-line resonator will be easily applied to monolithic microwave integrated circuits.

• Proceedings of the KIEE Conference
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• 2001.07c
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• pp.1841-1843
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• 2001

Asymmetrical parallel coupled lines are used in a number of circuits such as multi-band coupler and combline type band pass filter. Although graphical results and formulas are available for the design of coupled lines, the design procedure is hard to use, because even- and odd- mode impedances are always expressed in terms of the physical geometry. In this paper, we introduce a method to find design parameter using finite element analysis. By employing the capacitance obtained by FE analysis, design parameters for each lines are extracted. To show the validity of extracted design parameter for asymmetrical parallel coupled line, we have designed and simulated a planar type combline band pass filter.

• Journal of Electrical Engineering and Technology
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• v.10 no.3
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• pp.1154-1161
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• 2015

This paper presents a semi-lumped balun transformer using conventional PCB process and its design theory and geometry for the maximally flat response and wide bandwidth using magnetically coupled LC resonators. The proposed balun is comprised of two pairs of coupled resonators which share one among three LC resonators. It provides an identical magnitude and phase difference of 180° between two balanced ports with DC isolation and an impedance transformation characteristic. Theoretical design and analysis were performed to optimize the inductance and capacitance values of proposed balun device for obtaining the wide bandwidth and maximally flat response in its pass-band. Three balun transformers with a center frequency of 500 MHz were demonstrated for proving the concept of design proposed. They were fabricated by using lumped chip capacitors and planar inductors embedded into a conventional 4-layered PCB substrate. They exhibited a maximum magnitude difference of 0.8 dB and phase difference within 2.4 degrees.