• The Journal of Korean Society of Virology
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• v.28 no.2
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• pp.139-146
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• 1998

Recombinant polioviruses have been developed by many research groups for use as vaccine vector because poliovirus induces mucosal immunity as well as humoral immunity through oral uptake. We assessed the potential use of poliovirus as a T-cell epitope carrier. Recombinant poliovirus V129 5L was constructed to have a substituted T-helper epitope from the core protein of Hepatitis B virus at neutralization antigenic site 1 on its VP1 capsid protein. The recombinant virus replicated less efficiently than type 1 poliovirus Mahoney strain. The V129 5L formed a little smaller plaques than the Mahoney strain and showed some 1.25 log unit lower titer at the peak in the one-step growth kinetics though it had similar growth profile to that of the Mahoney strain. Since V129 5L recombinant virus was genetically stable even after 24 successive passages in HeLa cells, the antigenic site 1 on VP1 capsid protein was confirmed for its ability of carrying T cell epitope. The genetic stability of V129 5L also indicated that recombinant poliovirus can be successfully utilized for the development of the multivalent vaccines.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2007.10a
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• pp.751-753
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• 2007

Organic field-effect transistors (OFETs) are of interest for use in widely area electronic applications. We fabricated a copper phthalocyanine (CuPc) based field-effect transistor with different metal electrode. The CuPc FET device was made a top-contact type and the substrate temperature was room temperature. The source and drain electrodes were used an Au and Al materials. The CuPc thickness was 40nm. and the channel length was $50{\mu}m$, channel width was 3mm. We observed a typical current-voltage (I-V) characteristics in CuPc FET with different electrode materials.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.175-175
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• 2011

인체감지 적외선 센서로 사용되는 마이크로볼로미터 센서 감지재료인 $V_{2-x}W_xO_5$를 증착하고 단위소자를 제작하여 저항 및 센서성능을 측정 조사하였다. 감지재료는 $V_2O_5$에 W을 첨가하여 $V_{2-n}W_nO_5$ 타겟을 제작하였으며 RF sputtering 장비를 이용하여 $V_{1.85}W_{0.15}O_5$ 박막을 증착하였다. 증착온도 $400^{\circ}C$, $Ar/O_2$ 가스비율 50/20, 두께 200nm로 증착된 센서 재료의 특성을 조사한 결과 저항은 약 $20{\sim}70k{\Omega}$이었으며, TCR 값은 -3%/$^{\circ}C$ 이상으로 매우 우수한 박막특성을 얻었다. 볼로미터소자는 $40{\times}40{\sim}140{\times}140um^2$의 셀면적으로 설계하여 전극패턴과 습식식각공정으로 센서 구조체를 제작하였다. 소자의 성능평가는 검출기 측정장비를 이용하여 반응도 및 탐지도 특성을 조사하였다.

• Transactions on Electrical and Electronic Materials
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• v.8 no.4
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• pp.174-177
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• 2007

We fabricated organic field-effect transistors (OFETs) based a fluorinated copper phthalocyanine ($F_{16}CuPC$) and copper phthalocyanine (CuPc) as an active layer. And we observed the surface morphology of the $F_{16}CuPC$ thin film. The $F_{16}CuPC$ thin film thickness was 40 nm, and the channel length was $50{\mu}m$, channel width was 3 mm. And we also fabricated the $F_{16}CuPc/CuPc$ double layer FET and with different $F_{16}CuPc$ film thickness devices. We observed the typical current-voltage (I-V) characteristics and capacitance-voltage (C-V) in $F_{16}CuPc$ FET and we calculated the effective mobility. From the double layer FET devices, we observed the higher drain current more than single layer FET devices.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.59 no.4
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• pp.743-748
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• 2010

Boron nitride (BN) and carbon nitride (CN) films, which have relatively low work functions and commonly exhibit negative electron affinity behaviors, were coated on carbon nanotubes (CNTs) by magnetron sputtering. The CNTs were directly grown on metal-tip (tungsten, approximately 500nm in diameter at the summit part) substrates by inductively coupled plasma-chemical vapor deposition (ICP-CVD). The variations in the morphology and microstructure of CNTs due to coating of the BN and CN films were analyzed by field-emission scanning electron microscopy (FE-SEM). The energy dispersive x-ray (EDX) spectroscopy and Raman spectroscopy were used to identify the existence of the coated layers (CN and BN) on CNTs. The electron-emission properties of the BN-coated and CN-coated CNT-emitters were characterized using a high-vacuum field emission measurement system, in terms of their maximum emission currents ($I_{max}$) at 1kV and turn-on voltage ($V_{on}$) for approaching $1{\mu}A$. The results showed that the $I_{max}$ current was significantly increased and the $V_{on}$ voltage were remarkably reduced by the coating of CN or BN films. The measured values of $I_{max}-V_{on}$ were as follows; $176{\mu}A$-500V for the 5nm CN-coated emitter and $289{\mu}A$-540V for the 2nm BN-coated emitter, respectively, while the $I_{max}-V_{on}$ of the as-grown (i.e., uncoated) emitter was $134{\mu}A$-620V. In addition, the CNT emitters coated with thin CN or BN films also showed much better long-term (up to 25h) stability behaviors in electron emission, as compared with the conventional CNT emitter.

• Journal of Broadcast Engineering
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• v.16 no.4
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• pp.624-634
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• 2011

Recently, the JCT-VC is developing the next generation video coding standard that is called HEVC. HEVC has adopted many coding technologies increasing coding efficiency. For chroma interpolation, DCT-based interpolation filter showing better performance than the linear filter in H.264/AVC was adopted in HEVC. In this paper, a combined filter that utilizes the FIR filter and the linear filter in H.264/AVC is proposed to increase coding efficiency. When the proposed method is compared with DCT-based interpolation filter, the experimental results for various sequences show that the average BD-rate improvements on chroma U and V components are 0.9% and 1.1%, respectively, in the high efficiency case of random access structure, those on U and V components are 1.1% and 1.1%, respectively, in the low complexity case of random access structure, those on U and V components are 0.9% and 1.4%, respectively, in the high efficiency case of low delay structure, and those on U and V components are 1.8% and 1.8%, respectively, in the low complexity case of low delay structure.

• Proceedings of the Korean Nuclear Society Conference
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• 2005.05a
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• pp.1066-1067
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• 2005

• Proceedings of the Zoological Society Korea Conference
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• 2001.04a
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• pp.91.2-91
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• 2001

Allelic ladders ; DNA profiling ; Koreans ; STRs ; Y-chromosome haplotypes

• Journal of the Korean Geotechnical Society
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• v.24 no.6
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• pp.5-16
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• 2008

This study investigated the existing theoretical backgrounds in order to examine the stability control method of lateral flow caused by the Plasticity of soils when unsymmetrical surcharge works on polluted soils and then compared and analyzed the results measured through model tests. Ultimate bearing power of ML and $ML_{p1}$ and $ML_{p2}$ obtained at surcharge(q)-settlement$(S_v)$ curve showed similar trends to ultimate bearing power obtained from control chart of deflection $(S_v-Y_m)$ by Tominaga.Hashimoto, that of $S_v-(Y_m/S_v)$ by Matsuo.Kawamura and that of $(q/Y_m)-q$ by Shibata.Sekiguchi and so it is considered that it has no problem in actual applicability. ${S_v-(Y_m/S_v)}$ of control chart of $ML_{p1}$ by Matsuo.Kawamura showed smaller value than ultimate bearing capacity value from surcharge-settlement curve $(q-S_v)$. Expression of ML of fracture baseline at stability control charge by Matsuo Kawamura is ${S_v=3.21exp}\{-0.48(Y_m/S_v)\}$ and expression of $ML_{p1}$ is ${S_v=3.26exp}\{-0.96(Y_m/S_v)\}$ and expression of $ML_{p2}$ is ${S_v=6.33exp}\{-0.45(Y_m/S_v)\}$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.303-304
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• 2009

We fabricated organic field-effect transistors (OFETs) based a fluorinated copper phthalocyanine. ($F_{16}CuPc$) as an active layer. And we observed the surface morphology of the $F_{16}CuPc$ thin film. The $F_{16}CuPc$ thin film thickness was 40nm, and the channel length was $50{\mu}m$, channel width was 3mm. We observed the typical current-voltage (I-V) characteristics and capacitance-voltage (C-V) in $F_{16}CuPc$ FET and we calculated the effective mobility.