• 센서학회지
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• 제19권2호
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• pp.137-141
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• 2010

In this paper, we fabricated silicon piezoresistive pressure sensor with dry etching technology which used Deep-RIE and etching delay technology which used SOI(silicon-on-insulator) wafer. We improved pressure sensor offset and its temperature dependence by removing oxidation layer of SOI wafer which was used for dry etching delay layer. Sensitivity of the fabricated pressure sensor was about 0.56 mV/V${\cdot}$kPa at 10 kPa full-scale, and nonlinearity of the fabricated pressure sensor was less than 2 %F.S. The zero off-set change rate was less than 0.6 %F.S.

• E2M - 전기 전자와 첨단 소재
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• 제8권1호
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• pp.102-113
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• 1995

일반적으로 단결정 실리콘은 거의 모든 전자소자의 재료로서 널리 사용되고 있으며 제조공정기술 또한 상당한 수준에 도달하고 있다. 최근에는 실리콘 자체의 우수한 압저항효과, 기계적 특성 그리고 반도체 제조공정을 이용한 미세가공기술인 마이크로머시닝을 이용하는 반도체 압력센서에 대한 연구가 활발히 진행되고 있다. 기계식 압력센서에 비해서 전기적 변화를 이용하는 반도체 압력센서에서는 소형, 저가격, 고신뢰성, 고감도, 다기능, 고분해, 고성능 및 집적화 등의 우수한 특성을 지니고 있다. 본고에서는 이러한 특성을 가지는 반도체 압력센서중 특히, 압저항형과 용량형 압력센서의 구조와 원리, 그리고 연구.개발동향 및 향후 전망에 관해서 기술하였다.

• 한국컴퓨터정보학회:학술대회논문집
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• 한국컴퓨터정보학회 2016년도 제53차 동계학술대회논문집 24권1호
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• pp.137-139
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• 2016

본 논문에서는 압저항 소재 및 센서 기술과 ICT 응용 기술에 대해 소개한다. 먼저 압저항 소재의 구성 및 작동원리를 소개하고, 한국표준과학연구원에서 개발한 유연한 압저항 센서의 구성과 성능에 대해 기술한다. 또한, 개발된 압저항 센서와 ICT 기술을 융합한 스마트 안전 시스템 및 스마트 창호 침입감지 시스템에 대해 기술한다. 마지막으로, ICT기술을 기반으로 압저항 센서기술이 확장해 나아가야 할 스마트 보안 시스템 개발의 필요성을 기술한다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.416-417
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• 2005

In this study, we optimized the process of Si anisotropy etching by combing tetramethyl ammonium hydroxide (TMAH) etching process with ultrasonic wave technology. New ultrasonic TMAH etching apparatus was developed and it was used for fabricating a $20{\mu}m$ thick diaphragm for Si piezoresistive pressure sensors. Based on comparison study on etch rate and surface flatness, it was observed that the Si anisotropy etching methode with new ultrasonic TMAH etching apparatus (at 40 kHz/ 500 watt) was superior to conventional etching methods with TMAH or TMAH+ammonium persulfate(AP) solutions.

• 한국항해항만학회:학술대회논문집
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• 한국항해항만학회 2005년도 춘계학술대회 논문집
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• pp.405-410
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• 2005

현재 압력이나 가속도를 측정하기 위해 사용되는 반도체 센서 중에서 압저항 센서가 가장 광범위하게 적용되고 있다. 이러한 압저항 센서는 반도체 공정에 의해서 제작되고, 기존의 센서보다 높은 민감도를 가지므로 그 적용성이 매우 높다. 하지만, 압저항 센서를 형성하는 구조물의 형상과 관련된 연구가 국내에서 미비하므로 이에 대한 연구가 요구된다. 본 연구에서는 과도한 압력에 센서를 보호하기 위한 보스(Boss)와 민감도 향상을 위해 사용되는 매스(Seismic Mass)의 기하학적 변화가 민감도에 미치는 영향을 압저항 분포를 통하여 분석하고, 적절한 위치와 크기를 제시하고자 한다.

• 대한금속재료학회지
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• 제56권11호
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• pp.835-843
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• 2018

In this work, we report a delta rosette strain sensor based on highly stretchable silver nanowire (AgNW) percolation piezoresistors. The proposed rosette strain sensors were easily prepared by a facile two-step fabrication route. First, three identical AgNW piezoresistive electrodes were patterned in a simple and precise manner on a donor film using a solution-processed drop-coating of the AgNWs in conjunction with a tape-type shadow mask. The patterned AgNW electrodes were then entirely transferred to an elastomeric substrate while embedding them in the polymer matrix. The fabricated stretchable AgNW piezoresistors could be operated at up to 20% strain without electrical or mechanical failure, showing a maximum gauge factor as high as 5.3, low hysteresis, and high linearity ($r^2{\approx}0.996$). Moreover, the sensor responses were also found to be highly stable and reversible even under repeated strain loading/unloading for up to 1000 cycles at a maximum tensile strain of 20%, mainly due to the mechanical stability of the AgNW/elastomer composites. In addition, both the magnitude and direction of the principal strain could be precisely characterized by configuring three identical AgNW piezoresistors in a delta rosette form, representing the potential for employing the devices as a multidimensional strain sensor in various practical applications.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2004년도 추계학술대회 논문집
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• pp.186-189
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• 2004

Sensor used by semiconductor process produced an MAP sensor and applied to several industry. Among those sensors divided as transducer which convert physical quantity into electrical value, piezoresistive type sensor has been studied for the properties and sensitivity of piezoresistor. In this paper, the variation of seismic mass which have been functioned as actuator moving the cantilever beam analyzed the effect on distribution of resistance change ratio and supposed the optimal shape and position of piezoresistor. The resulting are following; According to the increment of seismic mass size, the value of resistance change ratio decreased caused by improve the stiffness. Y directional piezoresistor is formed in spot of 100 m apart from cantilever edge and length of that is 800$\mu$m. To increase the sensitivity, piezoresistor is made as n-type and x-direction.

• 한국마린엔지니어링학회:학술대회논문집
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• 한국마린엔지니어링학회 2005년도 전기학술대회논문집
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• pp.1016-1021
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• 2005

A piezoresistive pressure sensor using a silicone rubber membrane has been fabricated on the selectively diffused (100)-oriented n/n+/n silicon substrates by a unique silicon micromachining technique using porous silicon ething. The width, length and thickness of the beam were 120${\mu}m$, 600${\mu}m$ and 7${\mu}m$, respectively and the thickness of the silicone rubber membrane was 40${\mu}m$. By the fusion of silicon beam and silicone rubber membrane, the mechanical strength of the pressure sensor could be highly improved due to smaller shear stress. The effectiveness of the sensor was confirmed through an experiment and FEM simulation in which the pressure sensor was characterized.

• 대한전자공학회논문지
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• 제27권4호
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• pp.563-570
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• 1990

A silicon pressure sensor made of a full bridge of diffused resistors was designed and fabricated using semiconductor integrated circuit process. Thin diaphragms with 30\ulcorner thickness were obtained using anisotropic wet chemical etching technique. Our device showed strong temperature dependence. Compensation networks are used to compensate for the temperature dependence of the pressure sensor. The bridge supply voltage having positive temperature coefficient by compensation networks was utilized against the negative temperature coefficient of bridge output voltage. The sensitivity fluctuation of pressure sensor before temperature compensation was -1700 ppm/\ulcorner, while it reduced to -710ppm\ulcorner with temperature compensation. Our result shows that the we could develop accurate and reliable pressure sensor over a wide temperature range(-20\ulcorner~50\ulcorner).

• 한국마린엔지니어링학회:학술대회논문집
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• 한국마린엔지니어링학회 2000년도 춘계학술대회 논문집(Proceeding of the KOSME 2000 Spring Annual Meeting)
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• pp.105-109
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• 2000

Micronization of sensor is a trend of the silicon sensor development with regard to a piezoresistive silicon pressure sensor the size of the pressure sensor diaphragm have become smaller year by year and a microaccelerometer with a size less than 200-300${\mu}m$ has been realized. In this paper we study some of the micromachining processes of SOI(silicon on insulator)for the microaccelerometer and their subsequent processes which might affect thermal loads. The finite element method(FEM) has been a standard numerical modeling technique extensively utilized in structural engineering discipline for design of SOI wafers. Successful thermal behaviors analysis and design of the SOI wafers based on the tunneling current concept using SOI wafer depend on the knowledge abut normal mechanical properties of the SCS(single crystal silicon)layer and their control through manufacturing process