• Journal of the Korean Institute of Telematics and Electronics D
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• v.34D no.7
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• pp.30-36
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• 1997

Bump bonded piezoesistive silicon accelerometer was fabricated by the porous silicon micromachining and th eprocess technique of integrated circuit. The output voltage of the accelerometer fabricated on (111)-oreiented Si substrates with n/n$^{+}$n triple layers showed good linear characteristic of less than 1%. The measured sensitivity and the resonant frequency was about 743 .mu.V/g and 2.04 kHz, respectively. And the transverse sensitivity of 5.2% was measured from the accelerometer. Also, to investigate an influence on the output characteristics of the sensor due to bump bonding, the values of the piezoresistors were measured through thermal-cycling test in the temperature variation form -50 to 120.deg. C. Then, there was 0.014% resistance changes about 3.61 k.ohm., so sthe output charcteristics of the sensor was less affected by bump bonding.g.

• Journal of Physiology & Pathology in Korean Medicine
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• v.19 no.6
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• pp.1673-1675
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• 2005

The pulse diagnosis is an important and universal method in Oriental medicine. Nevertheless, because of characteristic that depends on subjective sense of Oriental medicine doctor (OMD), it is not recognized by objective basis. The Korean Institute of Oriental Medicine(KIOM) and Daeyo Medi. Co. Ltd. developed the 3-D Mac using arrey piezoresistive sensors and multi-axial robot. 133 healthy subjects participated in this study, 75 males and 58 females, between 20 and 70 years of age. All subjects were relaxed in a supine position on a comfortable chair for twenty minutes before the measurement was taken. The measured position is the radial artery of subject's left wrist and the position is called Chon, Kwan and Chuck in Oriental medicine. To detect floating and sinking pulse, we established coefficient of floating and sinking(CFS). CFS means relative position of maximum pulse pressure in PH curve. The lower CFS value means that the pulse has floating tendency. There was significant diffence between CFS and diagnosis of floating-sinking pulse by OMD(p=0.020). CFS value of over 40's group was significantly larger than those of 20's and 30's(p=0.000). There was no significant difference between male and female(p=0.061).

• Journal of Sasang Constitutional Medicine
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• v.18 no.1
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• pp.118-131
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• 2006

1. Objective Pulse diagnosis is generally applied to Traditional Oriental Medicine but not to Sasang Constitution diagnosis. Recently new pulse analyzer using array piezoresistive sensor and multi-channel robot arm developed. It reflects Oriental Medical Doctors' diagnostic processes, and its reproducibility test was done at Korea Institute of Oriental Medicine. We performed this study to set parameters diagnosing Sasang Constitution. 2. Methods One hundred thirty three subjects participated in this study. They are healty and approved this study. Before being tested with pulse analyzer, they had interview with Sasang Constitution Specialist to diagnose their Sasang Constitution. We established some useful parameters from parameters of pulse analyzer according to the Original Texts of Oriental Medicine and clinical experiences to analyze with clinical data of this study. 3. Results (I) There is a significant difference in pre-dicrotic notch time among all parameters of pulse analyzer in Sasang Constitution groups(P=0.047). (2) There is a significant difference in maximum pulse pressure in 33 to 48 year Sasang Constitution groups(P=0.010). (3) There is a significant difference in frequency width in 17 to 32 year Sasang Constitution groups(P=0.002). (4) There is a significant difference in CFS value in groups which OMD diagnoses; Floating & Sinking pulse(P=0.020). (5) There is a significant difference in pulse rate in groups which OMD diagnoses; Rapid & Slow pulse(P=0.000). (6) There is a significant difference in maximum pulse pressure in groups which OMD diagnoses; Deficient & Solid pulse(P=0.000). 4. Conclusions Analyzing parameters in each Sasang Constitution group, we found it shows significant difference in maximum pulse pressure and corresponding tendency in coefficient of floating & sinking pulse with theories of Sasang Consti-tutional Medicine. As we accumulate more clinical data, we will establish algorithm to diagnose Sasang Constitution using a pulse analyzer.

• Journal of Sensor Science and Technology
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• v.3 no.3
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• pp.45-53
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• 1994

A new type of Si diaphragm was fabricated using Si-wafer direct bonding and two-step electrochemical etch-stopping methods. Using the new diaphragm structure in mechanical sensors, more precise control of cavity depth and diaphragm thickness was achievable. Also, the propagation of the stress, which was generated near the bonding interface, to the surface can be avoided. Finally, a piezoresistive-type Si pressure sensor was fabricated utilizing the diaphragm and a digital pressure gauge, which can display units of pressure, was realized.

• Journal of Sensor Science and Technology
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• v.1 no.2
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• pp.131-145
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• 1992

This paper has been described a process technology for the fabrication of Si-on-insulator(SOI) transducers and circuits. The technology utilizes Si-wafer direct bonding(SDB) and mechanical-chemical(M-C) local polishing to create a SOI structure with a high-qualify, uniformly thin layer of single-crystal Si. The electrical and piezoresistive properties of the resultant thin SOI films have been investigated by SOI MOSFET's and cantilever beams, and confirmed comparable to those of bulk Si. Two kinds of pressure transducers using a SOI structure have been proposed. The shifts in sensitivity and offset voltage of the implemented pressure transducers using interfacial $SiO_{2}$ films as the dielectrical isolation layer of piezoresistors were less than -0.2% and +0.15%, respectively, in the temperature range from $-20^{\circ}C$ to $+350^{\circ}C$. In the case of pressure transducers using interfacial $SiO_{2}$ films as an etch-stop layer during the fabrication of thin Si membranes, the pressure sensitivity variation can be controlled to within a standard deviation of ${\pm}2.3%$ from wafer to wafer. From these results, the developed SDB process and the resultant SOI films will offer significant advantages in the fabrication of integrated microtransducers and circuits.

• Journal of the Microelectronics and Packaging Society
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• v.25 no.3
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• pp.55-59
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• 2018

In this paper, we investigated the characteristics of shear stress type piezoresistor on a diaphragm structure formed by MEMS (Microelectromechanical System) technology of silicon-direct-bonding (SDB) wafers with Si/$SiO_2$/Si-sub. The diaphragm structure formed by etching the backside of the wafer using a TMAH aqueous solution can be used for manufacturing various sensors. In this study, the optimum shape condition of the shear stress type piezoresistor formed on the diaphragm is found through ANSYS simulation, and the diaphragm structure is formed by using the semiconductor microfabrication technique and the shear stress formed by boron implantation. The characteristics of the piezoelectric resistance are compared with the simulation results. The sensing diaphragm was made in the shape of an exact square. It has been experimentally found that the maximum shear stress for the same pressure at the center of the edge of the diaphragm is generated when the structure is in the exact square shape. Thus, the sensing part of the sensor has been designed to be placed at the center of the edge of the diaphragm. The prepared shear stress type piezoresistor was in good agreement with the simulation results, and the sensitivity of the piezoresistor formed on the $2200{\mu}m{\times}2200{\mu}m$ diaphragm was $183.7{\mu}V/kPa$ and the linearity of 1.3 %FS at the pressure range of 0~100 kPa and the symmetry of sensitivity was also excellent.