• Steel and Composite Structures
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• v.35 no.6
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• pp.779-788
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• 2020

Multi-Walled Carbon nanotubes (MWCNT) coupled with Silicone Rubber (SR) can represent applicable strain sensors with accessible materials, which result in good stretchability and great sensitivity. Employing these materials and given the fact that the combination of these two has been addressed in few studies, this study is trying to represent a low-cost, durable and stretchable strain sensor that can perform excellently in a high number of repeated cycles. Great stability was observed during the cyclic test after 2000 cycles. Ultrahigh sensitivity (GF>1227) along with good extensibility (ε>120%) was observed while testing the sensor at different strain rates and the various number of cycles. Further investigation is dedicated to sensor performance in the detection of human body movements. Not only the sensor performance in detecting the small strains like the vibrations on the throat was tested, but also the larger strains as observed in extension/bending of the muscle joints like knee were monitored and recorded. Bearing in mind the applicability and low-cost features, this sensor may become promising in skin-mountable devices to detect the human body motions.

• JSTS:Journal of Semiconductor Technology and Science
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• v.2 no.4
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• pp.246-252
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• 2002

Two kinds of PZT cantilevers integrated with a piezoresistor have been newly designed, fabricated, and characterized for high speed AFM. In first cantilever, a piezoresistor is used to sense atomic force acting on tip, while in second cantilever, a piezoresistor is integrated to calibrate hysteresis and creep phenomena of the PZT cantilever. The fabricated PZT cantilevers provide high tip displacement of $0.55\mu\textrm{m}/V$ and high resonant frequency of 73 KHz. A new cantilever structure has been designed to prevent electrical coupling between sensor and PZT actuator and the proposed cantilever shows 5 times lower coupling voltage than that of the previous cantilever. The fabricated PZT cantilever shows a crisp scanned image at 1mm/sec, while the conventional piezo-tube scanner shows blurred image even at $180\mu\textrm{m}/sec$. The non-linear properties of the PZT actuator are also well calibrated using the piezoresistive sensor for calibration.

• The Transactions of the Korean Institute of Electrical Engineers D
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• v.51 no.1
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• pp.32-38
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• 2002

This paper describes a development of a portable physical activity monitoring system using two accelerometers to quantify physical activity. The system hardware consists of two piezoresistive accelerometers, amplifiers with gain of 30, lowpass filters with cut-off frequency of 15Hz, offset control circuits, one-chip microcontroller and flash memory card. In order to evaluate the performance of the system we acquired 3 channel data at 32 sample/sec from body-fixed accelerometers in chest and right upper leg. And then the acquired data were processed by MatLab on personal computer. We tried to distinguish not only fundamental actions which are steady-state activities such as standing, sitting, and lying but also dynamic activities with walking, up a stairway, down a stairway, and running. Five subjects participated the evaluation process which compare the video data with the measured data. As a result, the activity classification rate of 90.6% on average was obtained. Overall results showed that the steady-state activities could be classified from the low component of 3-axis acceleration signal and dynamic activities could be distinguished from frequency analysis using wavelet transform and FFT. Finally, we could find that this system can be applied to acquire and analyze the static and dynamic physical activity data.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.888-891
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• 2003

This paper describes on the fabrication and characteristics of micro ceramic thin-film type pressure sensors based on Ta-N strain-gauges for high-temperature applications. The Ta-N thin-film strain-gauges are deposited onto thermally oxidized Si diaphragms by RF sputtering in an argon-nitrogen atmosphere($N_2$ gas ratio: 8 %, annealing condition: $900^{\circ}C$, 1 hr.), Patterned on a wheatstone bridge configuration, and use as pressure sensing elements with a high stability and a high gauge factor. The sensitivity is $1.097{\sim}1.21mV/V.kgf/cm^2$ in the temperature range of $25{\sim}200^{\circ}C$ and the maximum non-linearity is 0.43 %FS. The fabricated pressure sensor presents a lower TCR, non-linearity than existing Si piezoresistive pressure sensors. The fabricated micro ceramic thin-film type pressure sensor is expected to be usefully applied as pressure and load sensors that is operable under high-temperature environments.

• Journal of IKEEE
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• v.1 no.1 s.1
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• pp.1-10
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• 1997

It is well-known that rectangular bulk-Si sensors prepared by etch or epi etch-stop micromachining technology are already in practical use today, but the conventional bulk-Si sensor shows some drawbacks such as large chip size and limited applications as silicon sensor device is to be miniaturized. We consider a circular-shape SOI(Silicon-On-Insulator) micro-cavity technology to facilitate multiple sensors on very small chip, to make device easier to package than conventional sensor like pressure sensor and to provide very high over-pressure capability. This paper demonstrates the cross-functional results for stress analyses(targeting $5{\mu}m$ deflection and 100MPa stress as maximum at various applicable pressure ranges), for finding permissible diaphragm dimension by output sensitivity, and piezoresistive sensor theory from two-type SOI structures where the double SOI structure shows the most feasible deflection and small stress at various ambient pressures. Those results can be compared with the ones of circular-shape bulk-Si based sensor$^{[17]}. The SOI micro-cavity formed the sensors is promising to integrate with calibration, gain stage and controller unit plus high current/high voltage CMOS drivers onto monolithic chip.

• Proceedings of the IEEK Conference
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• 2003.07b
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• pp.1033-1036
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• 2003

In this paper, Si anisotropic etching characteristics of tetramethylammonium hydroxide (TMAH)/ ammonium persulfate (AP) solutions were investigated to realize the optimum structure of a diaphragm for the piezoresistive pressure sensor application. Due to its low toxicity and its high compatibility with the CMOS processing, TMAH was used as Si anisotropic etchants. The variations of Si etch rate on the etching temperature, TMAH concentration, and etching time were obtained. With increasing the etching temperature and decreasing TMAH concentrations, the Si etch rate is increased while a significant non-uniformity exists on the etched surface because of formation of hillocks on the <100> surface. With the addition of AP to TMAH solution, the Si etch rate is increased and an improvement in flatness on the etching front is observed. The Si etch rate is also maximized with increasing the number of addition of AP to TMAH solution per one hour. The Si square diaphragms of 20${\mu}{\textrm}{m}$ thickness and 100~400${\mu}{\textrm}{m}$ one-side length were fabricated successfully by applying optimum Si etching conditions of TMAH/AP solutions.

• Fashion & Textile Research Journal
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• v.18 no.6
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• pp.733-745
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• 2016

This paper provides a review of wearable textile strain sensors that can measure the deformation of the body surface according to the movements of the wearer. In previous studies, the requirements of textile strain sensors, materials and fabrication methods, as well as the principle of the strain sensing according to sensor structures were understood; furthermore, the factors that affect the sensing performance were critically reviewed and application studies were examined. Textile strain sensors should be able to show piezoresistive effects with consistent resistance-extension in response to the extensional deformations that are repeated when they are worn. Textile strain sensors with piezoresistivity are typically made using conductive yarn knit structures or carbon-based fillers or conducting polymer filler composite materials. For the accuracy and reliability of textile strain sensors, fabrication technologies that would minimize deformation hysteresis should be developed and processes to complement and analyze sensing results based on accurate understanding of the sensors' resistance-strain behavior are necessary. Since light-weighted, flexible, and highly elastic textile strain sensors can be worn by users without any inconvenience so that to enable the users to continuously collect data related to body movements, textile strain sensors are expected to become the core of human interface technologies with a wide range of applications in diverse areas.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.27 no.7
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• pp.948-955
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• 2003

Pressure coefficient in rotating discharge hole was measured to gain insight into the influence of rotation to the discharge characteristics of rotating discharge hole. Pressure measurements were done by the telemetry system that had been developed by the authors. The telemetry system measures static pressure using piezoresistive pressure sensors. Pressure coefficients in rotating discharge hole were measured in longitudinal direction and circumferential direction with various rotating speed and 3 pressure ratios. From the results, the pressure coefficient, and therefore the discharge coefficient, is known to decrease with the increase of Ro number owing to the increase of flow approaching angle to the discharge hole inlet. However, there exists critical Ro number where the decrease rate of discharge coefficient with the increase of Ro number changes abruptly; flow separation occurs from the discharge hole exit at this critical Ro number. Critical Ro number increases with the increase of length-to-diameter ratio, but the increase is small where the length-to-diameter ratio is higher than 3. The decrease rate of discharge coefficient with the increase of Ro number depends on the pressure recovery at the discharge hole, and the rate is different from each length-to-diameter ratio; it has tendency that the short discharge hole shows higher decrease rate of discharge coefficient.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.31 no.3 s.258
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• pp.283-291
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• 2007

The static pressure distribution, atomization characteristics and velocity distribution of tapered nozzle swirl spray is analyzed and then compared with original swirl spray. The static pressure distribution inside the swirl spray is measured using a piezoresistive pressure transducer. Phase Doppler anemometry (PDA) is applied to measure and analyze the droplet size and velocity distribution of tapered nozzle and original swirl spray. The static pressure inside the spray shows the lower value compared to the atmospheric pressure and this pressure drop is getting attenuated as the taper angle is increased. The droplet size of tapered nozzle spray shows similar value compared to the original swirl spray at the horizontal mainstream while it shows increased value at vertical mainstream. The deteriorated atomization characteristics of tapered nozzle spray is improved by applying high fuel temperature injection without causing the spray collapse. The velocity results show that the larger portion of fuel is positioned with higher injection velocity, and the smaller portion of fuel is positioned with lower injection velocity with causing spatially non-uniform mixture distribution.

• Journal of Sensor Science and Technology
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• v.11 no.3
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• pp.138-144
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• 2002

The silicon piezoresistive pressure sensor is made by semiconductor process to obtain stainless steel isolated type pressure sensor. The sensor is loaded on a stainless steel housing with glass molding, $50\;{\mu}m$ stainless steel thin film is welded, and the stainless steel housing encapsulated by silicone oil. The performance of fabricated the pressure sensor has 10 bar pressure range. The XTR105 of exclusive transmitter chip is used the pressure transmitter that output current is 4 - 20 mA. The accuracy is ${\pm}5%$ FS, however, the accuracy is ${\pm}1%$ FS when the sensor is compensated temperature.