• Journal of the Korean Vacuum Society
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• v.17 no.3
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• pp.220-225
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• 2008

In this research, the P(VDF-TrFE) copolymer thin films were prepared by the physical vapor deposition and studied to their piezoelectric properties. In the case of a specimen produced by varying the deposition temperature from $260^{\circ}C$ to $300^{\circ}C$, its piezoelectric coefficient($d_{33}$) increased from 32.3pC/N to 36.28pC/N, and piezoelectric voltage coefficient($g_{33}$) from $793{\times}10^{-3}V{\cdot}m/N$ to $910.5{\times}10^{-3}V{\cdot}m/N$. On the basis of these experimental results, we concluded that the P(VDF-TrFE) copolymer thin film prepared at $300^{\circ}C$ showed the optimum piezoelectric properties. At the deposition temperature of $320^{\circ}C$, its piezoelectric coefficient(d33) decreased 25.3 pC/N and piezoelectric voltage coefficient($g_{33}$) $680{\times}10^{-3}V{\cdot}m/N$.

• Journal of the Korean Ceramic Society
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• v.41 no.3
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• pp.216-220
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• 2004

This paper is concerned with the development of stacked ceramic thin actuation layer IDEAL (InterDigitated Electrode Actuation Layer) using d$_{33}$ actuation mechanism of piezoelectric ceramic. Most of the thin piezoelectric actuators are operated with d$_{31}$ actuation mechanism. Many kinds of piezoelectric ceramic actuators are strived now to improve the actuation performance. One of efforts to improve performance of piezoceramic actuators is the research trying to develop an actuator using the piezoelectric coefficient d$_{33}$ . The piezoelectric coefficient d$_{33}$ is almost twice larger than piezoelectric coefficient d$_{31}$ . Therefore, the induced strain of PZT thin layer with d$_{33}$ 3 actuation mechanism is bigger than that with d$_{31}$ actuation mechanism. The AFC(MIT) and LaRC-MFC$^{TM}$ which is developed by a research team of NASA Langley Research Center used d$_{33}$ actuation mechanism with surface interdigitated electrode to enhance its actuation performance. But their actuation mechanism is not perfect d$_{33}$ actuation mechanism since the interdigitated electrodes are placed at the surface of the actuation layer. In this research, the stacked ceramic thin actuation layer with imbedded interdigitated electrode is designed and manufactured. The actuation strain of stacked ceramic thin actuation layer is measured and compared with the actuation strain of the LaRC-MFC$^{TM}$. The comparison shows that the developed stacked ceramic thin actuation layer can produce 15% more actuation strain than LaRC-MFC$^{TM}$.> TM/.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.916-919
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• 2000

A great deal of research has been done in the field of characterization for piezoelectric thin films after the first report on the measurement for the piezoelectric coefficient of thin films in 1990. The main idea of this research is to provide a distinctive solution for the measurement of both the longitudinal and the transverse piezoelectric d-coefficients, d$\sub$33/ and d$\sub$3l/, of ferroelectric thin films and also thick films. In general, to get these two coefficients of thin films, two different measuring systems are required. Here, we propose the improved method for the evaluation of these two coefficients with single equipment and with the relatively convenient procedure. The two-step loading process of applying the both positive and the negative pressure has been designed to acquire the piezoelectric coefficients. These results have beer calibrated for both the longitudinal and the transverse piezoelectric d-coefficients, d$\sub$33/ and d$\sub$31/, of thin films. In the first stage of the experiments, we have obtained d$\sub$33/ of 108pC/N and d$\sub$31/ of 57pC/N for the PZT thin films.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.12
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• pp.1054-1059
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• 2002

A great deal of research has been done in the field of characterization for piezoelectric thin films after the first report on the measurement for the piezoelectric coefficient of thin films in 1990. The main idea of this research is to provide a distinctive solution for the measurement and standardization of both the longitudinal and the transverse piezoelectric d-coefficients, d33 and d31, of ferroelectric thin films. In general, to get these two coefficients of thin films, two different measuring systems are required. Here, we propose the improved method for the evaluation of these two coefficients with single equipment and with the relatively convenient procedure. The two-step loading process of applying the both positive and the negative pressure has been introduced to acquire the piezoelectric coefficients. These results have been calibrated for both the longitudinal and 4he transverse piezoelectric d-coefficients, d33 and 431, of thin films by comparison with the virtual standard created from FEM. In this experiments, we have obtained d33 of 331pC/N and 031 of -92.2pC/N for the PZT thin films.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.11
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• pp.690-693
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• 2015

In this paper, in order to develop excellent Pb-free composition ceramics for ultrasonic sensor. The $SnO_2$-doped ($Na_{0.525}K_{0.443}Li_{0.037})(Nb_{0.883}Sb_{0.08}Ta_{0.037})O_3$)(abbreviated as NKL-NST) ceramics have been synthesized using the ordinary solid state reaction method. The effect of $SnO_2$-doping on their dielectric and piezoelectric properties was investigated. The ceramics doped with 0 wt% $SnO_2$ have the optimum values of piezoelectric constant($d_{33}$), piezoelectric figure of merit($d_{33}.g_{33}$), planar piezoelectric coupling coefficient($k_p$) and density : $d_{33}=195[pC/N]$, $d_{33}.g_{33}=5.62pm^2/N.kp=0.40$, $density=4.436[g/cm^3]$. suitable for duplex ultrasonic sensor application.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.10
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• pp.637-640
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• 2017

In this study, $(1-x)(Na_{0.52}K_{0.443}Li_{0.037})(Nb_{0.883}Sb_{0.08}Ta_{0.037})O_3-x(Bi_{0.5}(Na_{0.7}K_{0.3})_{0.5}ZrO_3$ ceramics were fabricated by BNKZ substitution using a conventional solid-state method to develop excellent lead-free piezoelectric ceramics for piezoelectric actuators; their dielectric and piezoelectric properties were then investigated. All specimens were in the orthorhombic phase. $NKL-NSTO_3$ ceramics with x=0.01 showed excellent piezoelectric properties. The density (${\rho}$), piezoelectric charge constant ($d_{33}$), planar piezoelectric coupling coefficient ($k_p$), mechanical quality factor ($Q_m$), and dielectric constant (${\varepsilon}_r$) had optimized values of $4.56g/cm^3$, 208 pC/N, 0.43, 96, and 975, respectively.

• Proceedings of the KIEE Conference
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• 1987.11a
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• pp.254-256
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• 1987

In this study, piezoelectric composite materials of O-3 connectivity were made by, mixing FZT ceramics with polymers, the dependence of volume % PZT and poling condition for dielectric and piezoelectric properties were investigated. The measured value of dielectric constant was dependent on the volume % PZT, which was exponentially increased with volume %PZT. Piezoelectric coefficient ($\bar{d}_{33}$) was exponentially increased with volume % PZT. Voltage coefficient ($\bar{g}_{33}$) was decreased with volume % PZT, but it was larger than that of single phase PZT ($\bar{g}_{33}$) because the dielectric constant ($\bar{\varepsilon}_{33}$) of composite materials was decreased.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.4
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• pp.218-222
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• 2017

In this paper, in order to develop excellent composition ceramics for a piezoelectric energy- harvesting device, we synthesized $0.99(Na_{0.52}\;K_{0.443}\;Li_{0.037})(Nb_{0.883}\;Sb_{0.08}\;Ta_{0.037})O_3$ + $0.01(Sr_{0.95}Ca_{0.05})TiO_3$ + $0.3\;wt%\;Bi_2O_3\;+\;0.3\;wt%\;Fe_2O_3\;+\;0.3\;wt%\;CuO$ (abbreviated as NKN-SCT) ceramics with different sintering times, using the ordinary solid-state reaction method. The effect of sintering time on the microstructure and piezoelectric properties was investigated. The ceramics with the sintering time of 7 h have the optimum values of the piezoelectric constant ($d_{33}$), piezoelectric voltage constant ($g_{33}$), planar piezoelectric coupling coefficient (kp), mechanical quality factor (Qm), and dielectric constant (${\varepsilon}r$): $d_{33}=314[pC/N]$, $g_{33}=20.07[10^{-3}mV/N]$, kp = 0.442, Qm = 93, ${\varepsilon}r=1,768$, all being suitable for a piezoelectric energy-harvesting device.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.2
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• pp.90-94
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• 2016

In this work, [$Pb(Mg_{1/2}W_{1/2})_{0.03}(Ni_{1/3}Nb_{2/3})_x(Zr_{0.5}Ti_{0.5})_{0.97-x}O_3-BiFeO_3$] (x=0.02 to 0.12) composition ceramics were fabricated by the conventional soild state reaction method and their microstructure and piezoelectric properties were investigated according to PNN substitution. The addition of small amount of $BiFeO_3$, $Li_2CO_3$, and $CaCO_3$ were used in order to decrease the sintering temperature of the ceramics. The XRD (x-ray diffraction patterns) of all ceramics exhibited a perovskite structure. The sinterability of PMW-PNN-PZT-BF ceramics was remarkably improved using liquid phase sintering of $CaCO_3$, $Li_2CO_3$. However, it was identified from of the X-ray diffraction patterns that the secondary phase formed in grain boundaries decreased the piezoelectric properties. According to the substitution of PNN, the crystal structure of ceramics is transformed gradually from a tetragonal to rhombohedral phase. The x=0.10 mol PNN-substituted PMW-PNN-PZT-BF ceramics sintered at $920^{\circ}C$ showed the optimum values of piezoelectric constant($d_{33}$), piezoelectric figure of merit($d_{33{\cdot}}g_{33}$), planar piezoelectric coupling coefficient($k_p$) and density : $d_{33}=566$ [pC/N], $g_{33}=29.28[10^{-3}mV/N]$, $d_{33{\cdot}}g_{33}=16.57[pm^2/N]$, $k_p=0.61$, density=7.82 [$g/cm^3$], suitable for duplex ultrasonic sensor application.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.126-129
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• 1999

Dielectric and piezoelectric properties of perovskite materials such as La modified $Pb(Zr,Ti)O_3$ ceramics and $Pb(Zn_{1/3}Nb_{2/3})O_3-PbTiO_3$ single crystals were investigated for cryogenic capacitor and actuator applications. Enhanced extrinsic contributions resulted in piezoelectric coefficient (d33) as high as 250 pC/N at 30 K, superior to that of PZT ($d_{33}$ ~ 100 pC/N). This cryogenic property enhancement was associated with retuning the MPB (or cryogenic temperatures. PZN-PT single crystals exhibited dramatic property improvements such as $d_{33}$ > 500 pC/N at 30 K as a result of an engineered domain state.