• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.101.1-101.1
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• 2016

Van der Waals (vdW) heterostructures built from two-dimensional layered materials provide an unprecedented opportunity in designing new material systems because the lack of dangling bonds on the vdW surfaces enables the creation of high-quality heterointerfaces without the constraint of atomically precise commensurability. In particular, the ability to build artificial heterostructures, combined with the recent advent of transition metal dichalcogenides, allows the fabrication of unique semiconductor heterostructures in an ultimate thickness limit for fundamental studies as well as novel device applications. In this talk, we will present the characterization of the electronic and optoelectronic properties of atomically thin p-n junctions consisting of vertically stacked WSe2 and MoS2 monolayers. We observed gate-tunable diode-like current rectification and a photovoltaic response across the p-n interface. Unlike conventional bulk p-n junctions, the tunneling-assisted interlayer recombination of the majority carriers is responsible for the tenability of the charge transport and the photovoltaic response. Furthermore, we will discuss the enhanced optoelectronic characteristics in graphene-sandwiched vdW p-n junctions.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.249.1-249.1
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• 2015

Quantum dots (QDs) are attracting growing attention for photovoltaic device applications because of their unique electronic, optical and physical properties. Lead sulfide (PbS) QDs are one of the most widely studied materials for the devices and known to have size-tunable properties. In this context, we investigated the relationship between the size of PbS QDs and two synthesizing conditions, a concentration of ligand, oleic acid in this work, and injection temperature. The inverted colloidal quantum dot solar cells based on the heterojunction of n-type zinc oxide layer and p-type PbS QDs were also fabricated. The size of the QDs and cell properties were observed to depend on both the QD synthesizing conditions, and hence the overall efficiency of the cell could vary even though the size of QDs used was same. The QD synthesizing conditions were finally optimized for the maximum cell efficiency.

• Proceedings of the KIPE Conference
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• 2000.07a
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• pp.670-673
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• 2000

This paper describes a new inverter active inverter between a photovoltaic(PV) array and single-phase utility that avoid the bulky input(60Hz) transformer on the AC side. The interface employs a pwm boost converter on the DC side followed by a pwm boost converter on the DC side followed by a pwm current-forced single-phase rectifier for injecting the power from the PV array into the mains. The current waveform at the AC side remains sinusoidal and exactly in phase at all time. The circuit also has the advantage of requiring fewer switching device than high-frequency link system. This paper describes modeling of PV array and new system topology. Simulation results on the performance of the connection are also presented.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.56 no.10
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• pp.1744-1750
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• 2007

This paper addresses grid interconnection tests of a 3kW transformer-less photovoltaic (PV) inverter to verify the effectiveness of the PV inverter and promote its wide use. The 3kW transformer-less PV inverter, which was equipped with intelligent protection and control system, was manufactured. A hardware test bed was constructed for performance tests of the PV inverter. Control performance and grid protection tests were carried out using the test bed. Test results verify the performance of the power control and grid protection functions of the developed transformer-less PV inverter.

• Current Photovoltaic Research
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• v.8 no.1
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• pp.1-5
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• 2020

The most important factor in enhancing the performance of an optical device is to minimize reflection and increasing transmittance of light for a broad wavelength range. The choice of appropriate coating material is crucial in decreasing reflection losses at the substrate. The purpose of this review is to highlight anti-reflection coating (ARC) materials that can be applied to silicon solar cell and glass substrate for minimizing reflection losses. The optical and electrical behavior of ARC on a substrate is highly dependent on thickness and refractive index (RI) of ARC films that are being deposited on it. The coating techniques and performance of single and multi-layered ARC films after coated on a substrate in a wide range of wavelength spectrum will be studied in the paper.

• KIEAE Journal
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• v.9 no.4
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• pp.37-42
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• 2009

Photovoltaic-thermal(PVT) collectors are a combination of photovoltaic modules with solar thermal collectors, forming one device that receives solar radiation and produces electricity and heat simultaneously. The PVT collectors can produce more energy per unit surface area than side by side PV modules and solar thermal collectors. There are two types of water type PVT collectors, depending on the existence of glass cover over PV module; glass-covered(glazed) PVT module, which produces relatively more thermal energy but has lower electrical yield, and uncovered(unglazed) PVT module, which has relatively lower thermal energy with somewhat higher electrical performance. In this paper, the experimental performance of two types of the water-based PVT combined collectors, glazed and unglazed, was analyzed. The electrical and thermal performances of the PVT combined collectors were measured in outdoor conditions, and the results were compared.

• Proceedings of the Polymer Society of Korea Conference
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• 2006.10a
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• pp.312-312
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• 2006

Block copolymers with well-defined nanoscopic structures have recently gained much attention for their potential uses as functional nanostructures. Here, we show that nanoporous templates made from polystyrene-block-poly (methyl methacrylate) (PS-b-PMMA) satisfy a novel design concept. At first, arrays of nanoscopic cylindrical microdomains oriented normal to the surface can easily be prepared. Then, we fabricated ultra high density arrays of conducting polymer as poly(pyrrole) (Ppy) and poly(3,4-ethylenedioxythiophene) (PEDOT) nanowires with diameters of $25{\sim}40\;nm$ on the ITO glass by electropolymerization of the monomers inside nanoholes. These high density arrays of conducting polymer nanowires could be used as P-type materials for photovoltaic devices.

• The Transactions of the Korean Institute of Power Electronics
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• v.17 no.6
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• pp.539-545
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• 2012

Due to merits cost and efficiency, the transformer-less type photovoltaic (PV) inverters have been popularized in the solar market. However, the leakage current flowing through a parasitic capacitor between PV array and ground can cause adverse effect in the transformer-less PV system. In this paper, a bi-directional PV inverter with high efficiency and low noise is proposed for the PV system with an energy storage device. The proposed inverter is a transformer-less type and performs the bi-directional power control between dc sources and grid with high efficiency. In addition, the proposed inverter can suppress the leakage current and obtain low noise characteristic. Finally, 3-kW prototype was implemented to confirm validity of the proposed inverter.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.4 no.2
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• pp.131-133
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• 1994

Deposition of silicon on pretreated sapphire substrates has been investigated by the liquid phase epitaxy method at low temperatures. An average 14 $\mu\textrm{m}$ thickness of silicon was grown over a large area on sapphire substrate originally coated with a much thinner silicon layer $[0.5 \mu\textrm{m} (100) Si/(1102) sapphire]$ at low temperatures from $(380^{\circ}C to 460^{\circ}C)$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.8
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• pp.496-500
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• 2015

This paper was proposed the theoretical research and optimal design 3000V super junction NPT IGBT for using electrical automotive and power conversion. Because super junction IGBT was showed ultra low on resistance, it was structure that can improve the thermal characteristics of conventional NPT IGBT. The electrical characteristics of super junction NPT IGBT were 2.52 V of on state voltage drop, 4.33 V of threshold voltage and 2,846 V breakdown voltage. We did not obtaing 3,000 V breakdown voltage but we will obtain 3,000 V breakdown voltage through improving p pillar layer. If we are carried this research, This device will be used electrical automotive, power conversiton and high speed train.