• 제목/요약/키워드: Photoresist

검색결과 433건 처리시간 0.023초

Heat Treatment of Carbonized Photoresist Mask with Ammonia for Epitaxial Lateral Overgrowth of a-plane GaN on R-plane Sapphire

  • Kim, Dae-sik;Kwon, Jun-hyuck;Jhin, Junggeun;Byun, Dongjin
    • 한국재료학회지
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    • 제28권4호
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    • pp.208-213
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    • 2018
  • Epitaxial ($11{\bar{2}}0$) a-plane GaN films were grown on a ($1{\bar{1}}02$) R-plane sapphire substrate with photoresist (PR) masks using metal organic chemical vapor deposition (MOCVD). The PR mask with striped patterns was prepared using an ex-situ lithography process, whereas carbonization and heat treatment of the PR mask were carried out using an in-situ MOCVD. The heat treatment of the PR mask was continuously conducted in ambient $H_2/NH_3$ mixture gas at $1140^{\circ}C$ after carbonization by the pyrolysis in ambient $H_2$ at $1100^{\circ}C$. As the time of the heat treatment progressed, the striped patterns of the carbonized PR mask shrank. The heat treatment of the carbonized PR mask facilitated epitaxial lateral overgrowth (ELO) of a-plane GaN films without carbon contamination on the R-plane sapphire substrate. Thhe surface morphology of a-plane GaN films was investigated by scanning electron microscopy and atomic force microscopy. The structural characteristics of a-plane GaN films on an R-plane sapphire substrate were evaluated by ${\omega}-2{\theta}$ high-resolution X-ray diffraction. The a-plane GaN films were characterized by X-ray photoelectron spectroscopy (XPS) to determine carbon contamination from carbonized PR masks in the GaN film bulk. After $Ar^+$ ion etching, XPS spectra indicated that carbon contamination exists only in the surface region. Finally, the heat treatment of carbonized PR masks was used to grow high-quality a-plane GaN films without carbon contamination. This approach showed the promising potential of the ELO process by using a PR mask.

압전 MEMS 스위치 구현을 위한 DLC 구조층에 관한 연구 (DLC Structure Layer for Piezoelectric MEMS Switch)

  • 황현석;이경근;유영식;임윤식;송우창
    • 한국위성정보통신학회논문지
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    • 제6권1호
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    • pp.28-31
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    • 2011
  • 본 논문에서는 d33 모드로 구동하여 우수한 성능을 가지는 RF-MEMS 스위치의 구현을 위한 희생층과 구조층의 조합으로서 DLC와 포토레지스트를 제안하였다. 포토레지스트의 경화현상을 방지하기 위하여 DLC 구조층은 상온에서 RF-PECVD 방법을 이용하여 증착하였다. 그리고 PZT 압전층은 RF 마그네트론 스퍼터링 방법을 이용하여 상온에서 구조층 위에 증착하였으며, 희생층의 제거 후 결정화를 위하여 급속 열처리 (RTA) 장비를 이용하여 후 열처리하였다. PZT의 결정화 과정과 DLC의 기계적 성질의 변화를 다양한 온도조건에 따라 분석한 결과 DLC는 PZT의 결정화 온도까지 영률과 강도면에서 우수한 특성을 나타냄을 확인하였다. 또한 포토레지스트를 사용함으로서 공정을 단순화하고 낮은 비용으로 제작이 가능하였다.

Hot Plate 신뢰성 시험.평가시스템 개발 (Reliability Evaluation System of Hot Plate for Photoresist Baking)

  • 송준엽;송창규;노승국;박화영
    • 한국정밀공학회지
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    • 제19권8호
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    • pp.180-186
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    • 2002
  • Hot Plate is the major unit that it used to remove damp of wafer surface, to strength adhesion of photoresist (PR) and to bake coated PR in FAB process of semiconductor. The badness of Hot Plate (HP) has directly influence upon the performance of wafer, it is necessary to guarantee the performance of HP. In this study, a reliability evaluation system has been designed and developed, which is to measure and to estimate thermal uniformity and flatness of HP in range of temperature 0~$250^\circC$. This system has included the techniques which measures and analyzes thermal uniformity using infrared thermal vision, and which compensates measuring error of flatness using laser displacement sensor For measuring flatness, a measurement stage of 3 axes are developed which adapts the precision encoder. The allowable error of this system in respect of thermal uniformity is less $than\pm0.1^\circC$ and in respect of flatness is less $than\pm$1mm . It is expected that the developed system can measure from $\Phi200mm\;(wafer 8")\;to\;\Phi300mm$ (wafer 12") and also can be used in performance test of the Cool Plate and industrial heater, etc.

Adhesive bonding using thick polymer film of SU-8 photoresist for wafer level package

  • Na, Kyoung-Hwan;Kim, Ill-Hwan;Lee, Eun-Sung;Kim, Hyeon-Cheol;Chun, Kuk-Jin
    • 센서학회지
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    • 제16권5호
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    • pp.325-330
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    • 2007
  • For the application to optic devices, wafer level package including spacer with particular thickness according to optical design could be required. In these cases, the uniformity of spacer thickness is important for bonding strength and optical performance. Packaging process has to be performed at low temperature in order to prevent damage to devices fabricated before packaging. And if photosensitive material is used as spacer layer, size and shape of pattern and thickness of spacer can be easily controlled. This paper presents polymer bonding using thick, uniform and patterned spacing layer of SU-8 2100 photoresist for wafer level package. SU-8, negative photoresist, can be coated uniformly by spin coater and it is cured at $95^{\circ}C$ and bonded well near the temperature. It can be bonded to silicon well, patterned with high aspect ratio and easy to form thick layer due to its high viscosity. It is also mechanically strong, chemically resistive and thermally stable. But adhesion of SU-8 to glass is poor, and in the case of forming thick layer, SU-8 layer leans from the perpendicular due to imbalance to gravity. To solve leaning problem, the wafer rotating system was introduced. Imbalance to gravity of thick layer was cancelled out through rotating wafer during curing time. And depositing additional layer of gold onto glass could improve adhesion strength of SU-8 to glass. Conclusively, we established the coating condition for forming patterned SU-8 layer with $400{\mu}m$ of thickness and 3.25 % of uniformity through single coating. Also we improved tensile strength from hundreds kPa to maximum 9.43 MPa through depositing gold layer onto glass substrate.

노즐 분사 방식의 ITO 표면 포토레지스트 박리과정 요인의 수치해석 (Numerical Investigation of Factors affecting Photoresist Stripping Process on the ITO Surface using the Spray Method)

  • 김준현;이준혁;강태성;주기태;김용성;정병현;이대원
    • 한국생산제조학회지
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    • 제26권2호
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    • pp.158-165
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    • 2017
  • This study investigated spraying factors applicable to stripper usage. Cyclodextrine, as environment-friendly material, was included in the stripper composition. An efficient spray technology was applied for the Photoresist strip. For industrial applications, stripping requires a temperature below $50^{\circ}C$, a strip time within 50 s, and chemically stable activation. Spraying factors were organized considering many conditions-orifice diameter, working pressure (inlet speed), spray distance, and spray angle. For commercial practicability, the flow rate was limited to 3 L/min. The nozzle parameters were nozzle orifice diameter of 1.8-2.2 mm, spray distance of 40-60 mm, and injection speed of 0.7-1.2 m/s. Through the thermal spray movement of the fluid, the thermal boundary layer for a chemical reaction just above the ITO-glass surface and momentum region for sufficient agitation (above 4 m/s) was achieved.

Fluorene 단위 구조를 함유한 감광성 고분자의 합성 및 LCD 컬러필터용 카본블랙 포토레지스트로의 응용 (Synthesis of Fluorene-containing Photosensitive Polymer and Its Application to the Carbon Black-based Photoresist for LCD Color-Filter)

  • 김주성;박겸재;이동근;배진영
    • 폴리머
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    • 제35권1호
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    • pp.87-93
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    • 2011
  • 본 연구에서는 LCD 컬러필터 레지스트용 fluorene 단위 구조를 가지는 다기능 바인더 고분자를 개발하여 카본블랙 기반 감광성 레지스트(CBR)를 제조하고 블랙 매트릭스(BM)에 적용하였다. 다기능 바인더 고분자를 얻기 위해 bisphcnol fluorene epoxy acrylate를 함유한 불포화 폴리에스터(BFEA-polyester)를 합성하였으며 이는 $^1H$ NMR, GPC 및 FTIR을 이용하여 분석하였다. 합성된 BFEA-polyester 바인더 고분자를 상업용 아크릴 바인더와 비교 평가하기 위하여 각각 CBR 제조 후 BM 리소그래피 테스트를 수행하였다. 그 결과, 본 연구에서 합성된 BFEA-polyester 바인더 고분자는 적합한 광경화 반응성과 알칼리 용해성을 가질 뿐만 아니라 기존 아크릴 바인더보다 더 우수한 공정 마진, 패턴 특성 및 유리 가판에 대한 접착력을 나타내었다.

초임계 이산화탄소를 이용한 고농도이온주입 포토레지스트의 효율적인 제거 (Efficient Stripping of High-dose Ion-implanted Photoresist in Supercritical Carbon Dioxide)

  • 김도훈;임의상;임권택
    • 청정기술
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    • 제17권4호
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    • pp.300-305
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    • 2011
  • 고농도 이온 주입되어 경화된 포토레지스트(HDI PR)를 효과적으로 제거하기 위해 초임계 이산화탄소와 여러 가지 공용매를 사용하였다. 공용매에 의한 용해 방식으로는 경화된 PR층이 완벽하게 제거되지 않기 때문에 고압셀에 초음파 발생 팁을 부착하여 웨이퍼 표면에 물리적인 힘을 제공함으로서 제거 성능을 높이고 제거시간을 단축할 수 있었다. 또한, HDI PR 제거 반응 후에 초임계 이산화탄소와 서로 섞이지 않는 헬륨 가스를 셀 내부에 주입하여 내용물을 배출함으로서, PR 제거 반응 잔여물을 빠른 시간에 제거할 수 있었다. 공용매의 종류 및 농도, 반응 온도, 압력 변화에 따른 HDI PR 제거 특성을 조사하였으며, 웨이퍼 표면의 반응 전 후의 상태 및 성분을 scanning electron microscopy과 energy dispersive X-ray spectrometer를 이용하여 분석하였다.

Negative Thick Photoresist를 이용한 $100{\mu}m$ 높이의 금속 구조물의 제작에 관한 연구 (Fabrication of $100{\mu}m$ High Metallic Structure Using Negative Thick Photoresist and Electroplating)

  • 장현기;김용권
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1998년도 하계학술대회 논문집 G
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    • pp.2541-2543
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    • 1998
  • This paper describes the fabrication process to fabricate metallic structure of high aspect ratio using LlGA-like process. SU-8 is used as an electroplating mold. SU-8 is an epoxy-based photoresist, designed for ultrathick PR structure with single layer coating [1,2]. We can get more than $100{\mu}m$ thick layer by single coating with conventional spin coater, and applying multiple coating can make thicker layers. In the experiments, we used different kinds of SU-8, having different viscosity. To optimize the conditions for mold fabrication process, experiments are performed varying spinning time and speed, soft-bake, develop and PEB (Post Expose Bake) condition. With the optimized condition, minimum line and space of $3{\mu}m$ pattern with a thickness of $40{\mu}m$ and $4{\mu}m$ pattern with a thickness of $130{\mu}m$ were obtained. Using the patterned PR as a plating mold, metallic structure was fabricated by electroplating. We have fabricated a electroplated nickel comb actuator using SU-8 as plating mold. The thickness of PR mold is $45{\mu}m$ and that of plated nickel is$40{\mu}m$. Minimum line of the mold is $5{\mu}m$. Patterned metallic layer or polymer layer, which has selectivity with the structural plated metallic layer, can be used as sacrificial layer for fabrication of free-standing structure.

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인쇄회로기판 감광층 보호필름의 레이저 유도 박리 (Laser-Driven Peeling of the Photoresist-Protective Film of a Printed Circuit Board)

  • 민형석;허준연;이지영;이명규
    • 한국광학회지
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    • 제26권5호
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    • pp.261-264
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    • 2015
  • 본 논문에서는 인쇄회로기판의 감광층 보호필름을 532 nm 파장의 나노초 레이저의 단일펄스로 박리할 수 있음을 보여준다. 인쇄회로기판의 가장자리를 9 mm 크기의 레이저 빔으로 국부적으로 박리시킨 후 스카치테이프를 레이저 조사에 의해 초기 박리 된 영역에 붙여 전체 보호필름을 떼어내었는데, 160 - 170 mJ의 펄스에너지 범위에서는 10회의 반복된 실험 모두에서 감광층 손상 없는 박리에 성공하였다. 보호필름 초기 박리에 레이저를 사용하는 방식은 기계적 압착에 바탕을 둔 기존의 널링방식과는 달리 감광층에 손상을 유발하지 않는 비접촉 방식으로써, 인쇄회로기판 제조공정에 보다 효율적으로 사용될 수 있을 것으로 판단된다.