• Journal of Convergence for Information Technology
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• v.10 no.6
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• pp.28-34
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• 2020

A structure in which GaAs and AlGaAs epilayers are formed with a metal organic chemical vapor deposition equipment on a GaAs wafer similar to the structure of making a vertical cavity surface emitting laser is used. Photonic Quantum Ring (PQR) devices that are naturally generated by 3D resonance are manufactured by chemically assisted ion beam etching technology, which is a dry etching method. A new technology that can be fabricated has been studied, and as a result, the possibility of wet etching of a solution containing phosphoric acid, hydrogen peroxide and methanol was investigated, and the device fabrication by applying this method are also discussed. In addition, the spectrum of the fabricated optical device was measured, and the results were theoretically analyzed and compared with the wavelength value obtained by the measurement. It is expected that the PQR device will be able to model cells in a three-dimensional shape or be applied to the display field.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.120-123
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• 2002

In this study it had an excellent optical characteristic, it followed in the creation rate and the refractive index regulation to the ease. Chalcogenide produced the $As_{45}Se_{45}Te_{10}$ thin film and the $MgF_{2}$ thin film. It measured thin film plan simulation, and the thin film has a 1 -dimensional photonic band gap. The chalcogenide $As_{45}Se_{45}Te_{10}$ thin film was measured with the fact that it has a high refractive index (2.6~2.9). The $As_{45}Se_{45}Te_{10}$ and $MgF_{2}$ thin film, have a high refractive index and a low refractive index, it used a simulation and planed period 5-pairs structure, the result was from 500nm to 800nm. It will be able to confirm the characteristic which most of the incidence light reflects, the He-Ne (632.8nm) laser was irradiated in the thin film which stabilized the thin film. $As_{45}Se_{45}Te_{10}$ (high refractive index layer: H) and $MgF_{2}$ (low refractive index layer: L) results which plans the thin film with glass/LHLHLLHLHL/air structure, 632.8nm against transmitance, increased a lot. An application possibility with the filter against a specific wave length was confirmed.

• Journal of electromagnetic engineering and science
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• v.6 no.2
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• pp.98-102
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• 2006

In this paper, we have designed and fabricated the high power amplifier employing PBG(Photonic Band-Gap Structure) to improve the linearity of the amplifier in the millimeter wave band. The fabricated amplifier using MMIC(TGA1073G) has operated about 24 GHz band and the PBG has resulted in 35 dB suppression about 49 GHz where the second harmonic occurs due to the amplifier. As a result, the output power has been 24.43 dBm and 13.2 dBc of the IMD has been improved. Also, the PAE is obtained to 14.96 % of the amplifier employing the PBG structure in Ka band.

• Journal of electromagnetic engineering and science
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• v.5 no.1
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• pp.43-47
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• 2005

Microwave or optical photonic band-gap(PBG) structures are conventionally realized by cascading distributive elements in a periodic pattern. However, the frequency bandwidth obtained through such plainly periodic arrangement is typically narrow, corporate with a relatively high rejection side-lobe band. To alleviate such problems, a design involving a chirping and tapering technique is hence introduced and employed. The design has been applied in both a planar stratified dielectric medium as well as a strip-line transmission line structure, and results are validated when compared with the corresponding conventional PBG structure.

• Journal of the Optical Society of Korea
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• v.12 no.1
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• pp.13-18
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• 2008

We numerically investigate by the finite-difference time-domain method the effects of surface termination on directional emission exiting a photonic crystal waveguide. The directed power and far-field beam profile for the original proposal [E. Moreno et al., Phys. Rev. B 69, 121402 (2004)] and its enhancement [S. K. Morrison et al., Appl. Phys. Lett. 86, 081110 (2005)] are computed for different values of some important parameters. We find another surface termination condition with a positive surface displacement in the structure of the original proposal which has a negative surface displacement. Our surface termination is more effective than the original structure, and nearly as effective as the termination for the enhancement, for directional emission. Besides, our termination is simpler than that for the enhancement. We confirm the effectiveness of directional emission from our termination in its far-field beam profile, radiation intensity distribution, and additionally the wave-vector space representation by the Fourier analysis.

• Journal of Integrative Natural Science
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• v.2 no.2
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• pp.82-85
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• 2009

Distributed Bragg reflector (DBR) porous silicon (PSi) was generated by an electrochemical etching a bragg structure into a silicon wafer through electrode current in aqueous ethanolic HF solution. DBR PSi exhibiting unique reflectivity was successfully obtained by an electrochemical etching of silicon wafer using square current waveform. The multilayered photonic crystals of DBR PSi exhibited the reflection of a specific wavelength with high reflectivity in the optical reflectivity spectrum. In this work, we have developed a method to create refractive index in Si substrate through intensity of an electric current. The electrochemical process allows for precise control of the structural properties of DBR PSi such as thickness of the porous layer, porosity, and average pore diameter. The number of reflection peak of DBR PSi and its pore size increased as the intensity of electric current increased. This might be a demonstration for the fabrication of specific reflectors or filters.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.824-827
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• 2000

Fabrication of InP-based photonic devices by dry etch Process is important for clear formation of waveguide mesa structure. We have developed more efficient etch process of the inductively coupled plasma (ICP) with low damages and less polymeric deposits for the InP-based photonic devices than the reactive ion etching (RIE) technique. We report the tendency of etch rate variation by the process parameters of the RF power, pressure, gas flow rate, and the gas mixing ratio. The surface roughness of InP-based waveguide structure was more improved by the light wet etching in the mixed solution of H$_2$SO$_4$:H$_2$O (1:1)

• Proceedings of the Optical Society of Korea Conference
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• 2007.07a
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• pp.301-302
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• 2007

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.14 no.3
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• pp.283-289
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• 2003

In this paper, we proposed novel multilayer photonic bandgap(PBG) structure using DSL(Descended Signal Line). From measurement result, the proposed PBG structure using DSL is reduced 72 % at size and increased 13 % at bandwidth compared to typical multilayer DGS(Defected Ground Structure). It is also reduced 42 % at size and increased 23 % at bandwidth compared to PBG structure using EGP(Elevated Ground Plane). In case of measurement for manufactured six PBG patterns, all patterns have the same cutoff frequency and bandstop characteristics. So it can be used for bandstop filter having very precise tolerance of below 300 MHz at 20 ㎓ if it is applied to real product and this filter will be useful for small microwave integrated circuit and module development.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.37 no.9
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• pp.38-48
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• 2000

This paper presents the photonic bandgap structure that has a defect mode within a broad stopband. In order to create a broad stopband, we eliminated one of periodic stopbands of PBG structure by using a quarter-wavelength transformer and cascaded another PBG structure having a center frequency corresponding to the eliminated stopband. We have demonstrated that it is a simple and effective method that can solve an overlapping problem of periodic stopband in two cascaded PBG structures.