• Journal of Digital Convergence
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• v.19 no.11
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• pp.341-349
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• 2021

We studies to verify results similar to those of previous experiments, and their potential as a lighting device through optical characteristics experiments and resonance and optical characteristics simulations of array devices. The photonic quantum ring (PQR) device having a mesa diameter of 40 ㎛ and an internal hole diameter of 3 ㎛ was fabricated. Through the near-field observation of the fabricated device, it was found that the PQR device operates even at ㎂, and also that the mesa and hole devices are driven independently of each other. As a result of measuring the wavelength spectrum of the device according to the location, the coupling phenomenon due to mesa and holes was confirmed.

• Journal of Convergence for Information Technology
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• v.10 no.6
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• pp.28-34
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• 2020

A structure in which GaAs and AlGaAs epilayers are formed with a metal organic chemical vapor deposition equipment on a GaAs wafer similar to the structure of making a vertical cavity surface emitting laser is used. Photonic Quantum Ring (PQR) devices that are naturally generated by 3D resonance are manufactured by chemically assisted ion beam etching technology, which is a dry etching method. A new technology that can be fabricated has been studied, and as a result, the possibility of wet etching of a solution containing phosphoric acid, hydrogen peroxide and methanol was investigated, and the device fabrication by applying this method are also discussed. In addition, the spectrum of the fabricated optical device was measured, and the results were theoretically analyzed and compared with the wavelength value obtained by the measurement. It is expected that the PQR device will be able to model cells in a three-dimensional shape or be applied to the display field.

• ETRI Journal
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• v.26 no.1
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• pp.1-6
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• 2004

The photonic quantum ring (PQR) laser is a three dimensional whispering gallery (WG) mode laser and has anomalous quantum wire properties, such as microampere to nanoampere range threshold currents and ${\sqrt{T}}$-dependent thermal red shifts. We observed uniform bottom emissions from a 1-kb smart pixel chip of a $32{\times}32$ InGaAs PQR laser array flip-chip bonded to a 0.35 ${\mu}m$ CMOS-based PQR laser driver. The PQR-CMOS smart pixel array, now operating at 30 MHz, will be improved to the GHz frequency range through device and circuit optimization.