• Applied Chemistry for Engineering
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• v.22 no.2
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• pp.190-195
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• 2011

To investigate the photon-trapping effect and scattering layer effect of $TiO_2$ multi-layer in dye-sensitized solar cell (DSSC) and the degree of recombination of electrons at the electrode treated $TiCl_4$, we formed electrodes of different conditions and obtained the most optimal electrode conditions. To estimate characteristics of the cell, IV curve, UV-Vis spectrophotometer, electrochemical impedance spectroscopy (EIS) and incident photon-to-current conversion efficiency (IPCE) were measured. As a result, we confirmed that the multi-layer's efficiency was higher than that of monolayer in the IV curve and the performance of $TiCl_4$ treated electrode was increased according to decreasing the impedance of EIS. Among several conditions, the efficiency of the cell with scattering layer is higher than that of a layer with the base electrode about 19%. Because the light scattering layer enhances the efficiency of the transmission wavelength and has long electron transfer path. Therefore, the value of the short circuit current increases approximately 10% and IPCE in the maximum peak also increases about 12%.

• Journal of the Korean Solar Energy Society
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• v.31 no.2
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• pp.82-88
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• 2011

The artificial increase in the solar intensity incident on solar cells using lenses or mirrors can allow solar cells to generate equivalent power with a lower cost. There are two types of concentration optics for solar energy conversion. One is to use mirrors, and the other is to use Fresnel lenses. The gains that can be achieved with a Fresnel lens or a parabolic mirror are compared. The result showed the gains are comparable and the two configurations were developed competitively. In application areas of Fresnel lenses as solar concentrators, several variations of design were devised and tested. Some PV systems still use commercially available flat Fresnel lenses as concentrators. A convex linear Fresnel lens to improve the concentration ratio and the efficiency is devised and flat linear Fresnel lens in thermal energy collection is utilized. In this study, we designed and optimized flat Fresnel lens and the 'light pipe' to develop 500X concentrated solar PV system. In the process, we compare the transmission efficiencies according to groove types. We performed rigorous ray tracing simulation of the flat Fresnel lenses. The computer aided simulation showed the 'grooves in case' has the better efficiency than that of 'grooves out case'. Based on the ray-trace results we designed and manufactured sample Fresnel lenses. The optical performance were measured and compared with ray-trace results. Finally, the optical efficiency was measured to be above 75%. All the design and manufacturing were performed based on that InGaP/InGaAs/Ge triple junction solar cell is used to convert the photon energy to electrical power. Field test will be made and analyzed in the near future.

• Nuclear Engineering and Technology
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• v.55 no.1
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• pp.278-284
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• 2023

The synthetic B₂O₃-As₂O₃ glass ceramic are prepared to investigate the physical properties and the radiation shielding capabilities with the variation of concentration of the As₂O₃ with 10, 20, 30, and 40%, respectively. XRD analyses are performed on the fabricated glass-ceramic and depicted the improvement of crystallinity by adding As₂O₃. The radiation shielding properties are studied for the B₂O₃-As₂O₃ glass ceramic. The values of linear attenuation coefficient (LAC) are varied with the variation of incident photon gamma energy (23.1-103 keV). The LAC values enhanced from 12.19 cm^-1-37.75 cm^-1 by raising the As₂O₃ concentration from 10 to 40 mol% at low gamma energy (23.1 keV) for BAs10 and BAs40, respectively. Among the shielding parameters, the half-value layer, transmission factor, and radiation protection efficiency are estimated. Furthermore, the fabricated samples of glass ceramic have low manufacturing costs and good shielding features compared to the previous work. It can be concluded the B₂O₃-As₂O₃ glass ceramic is appropriate to apply in X-ray or low-energy gamma-ray shielding applications.

• Korean Journal of Materials Research
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• v.20 no.11
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• pp.586-591
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• 2010

Solar cells have been more intensely studied as part of the effort to find alternatives to fossil fuels as power sources. The progression of the first two generations of solar cells has seen a sacrifice of higher efficiency for more economic use of materials. The use of a single junction makes both these types of cells lose power in two major ways: by the non-absorption of incident light of energy below the band gap; and by the dissipation by heat loss of light energy in excess of the band gap. Therefore, multi junction solar cells have been proposed as a solution to this problem. However, the $1^{st}$ and $2^{nd}$ generation solar cells have efficiency limits because a photon makes just one electron-hole pair. Fabrication of all-silicon tandem cells using an Si quantum dot superlattice structure (QD SLS) is one possible suggestion. In this study, an $SiO_x$ matrix system was investigated and analyzed for potential use as an all-silicon multi-junction solar cell. Si quantum dots with a super lattice structure (Si QD SLS) were prepared by alternating deposition of Si rich oxide (SRO; $SiO_x$ (x = 0.8, 1.12)) and $SiO_2$ layers using RF magnetron co-sputtering and subsequent annealing at temperatures between 800 and $1,100^{\circ}C$ under nitrogen ambient. Annealing temperatures and times affected the formation of Si QDs in the SRO film. Fourier transform infrared spectroscopy (FTIR) spectra and x-ray photoelectron spectroscopy (XPS) revealed that nanocrystalline Si QDs started to precipitate after annealing at $1,100^{\circ}C$ for one hour. Transmission electron microscopy (TEM) images clearly showed SRO/$SiO_2$ SLS and Si QDs formation in each 4, 6, and 8 nm SRO layer after annealing at $1,100^{\circ}C$ for two hours. The systematic investigation of precipitation behavior of Si QDs in $SiO_2$ matrices is presented.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.276-276
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• 2010

Localized surface plasmon resonance (LSPR) has been explored recently as a promising approach to increase energy conversion efficiency in photovoltaic devices, particularly for thin film hydrogenated amorphous silicon (a-Si:H) solar cells. The LSPR is frequently excited via an electromagnetic (EM) radiation in proximate metallic nanostructures and its primary con sequences are selective photon extinction and local EM enhancement which gives rise to improved photogeneration of electron-hole (e-h) pairs, and consequently increases photocurrent. In this work, high-dielectric-constant (k) $ZrO_2$ (refractive index n=2.22, dielectric constant $\varepsilon=4.93$ at the wavelength of 550 nm) is proposed as spacing layer to enhance the LSPR for application to the thin film silicon solar cells. Compared to excitation of the LSPR using $SiO_2$ (n=1.46, $\varepsilon=2.13$ at the wavelength of 546.1 nm) spacing layer with Au nanoparticles of the radius of 45nm, that using $ZrO_2$ dielectric shows the advantages of(i) ~2.5 times greater polarizability, (ii) ~3.5 times larger scattering cross-section and ~1.5 times larger absorption cross-section, (iii) 4.5% higher transmission coefficient of the same thickness and (iv) 7.8% greater transmitted electric filed intensity at the same depth. All those results are calculated by Mie theory and Fresnel equations, and simulated by finite-difference time-domain (FDTD) calculations with proper boundary conditions. Red-shifting of the LSPR wavelength using high-k $ZrO_2$ dielectric is also observed according to location of the peak and this is consistent with the other's report. Finally, our experimental results show that variation of short-circuit current density ($J_{sc}$) of the LSPR enhanced a-Si:H solar cell by using the $ZrO_2$ spacing layer is 45.4% higher than that using the $SiO_2$ spacing layer, supporting our calculation and theory.

• Journal of the Korean Society of Radiology
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• v.11 no.7
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• pp.547-553
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• 2017

In the current medical field, lead is widely used as a radiation shield. However, the lead weight is very heavy, so wearing protective clothing such as apron is difficult to wear for long periods of time and there is a problem with the danger of lethal toxicity in humans. Recently, many studies have been conducted to develop substitute materials of lead to resolve these problems. As a substitute materials for lead, barium(Ba) and iodine(I) have excellent shielding ability. But, It has characteristics emitting characteristic X-rays from the energy area near 30 keV. For patients or radiation workers, shielding materials is often made into contact with the human body. Therefore, the characteristic X-rays generated by the shielding material are directly exposured in the human body, which increases the risk of increasing radiation absorbed dose. In this study, we have developed the FLUKA transport code, one of the most suitable elements of radiation transport codes, to remove the characteristic X-rays generated by barium or iodine. We have verified the reliability of the shielding fraction of the structure of the structure shielding by comparing with the MCPDX simulations conducted as a prior study. Using the MCNPX and FLUKA, the double layer shielding structures with the various thickness combination consisting of barium sulphate ($BaSO_4$) and bismuth oxide($Bi_2O_3$) are designed. The accuracy of the type shown in IEC 61331-1 was geometrically identical to the simulation. In addition, the transmission spectrum and absorbed dose of the shielding material for the successive x-rays of 120 kVp spectra were compared with lead. In results, $0.3mm-BaSO_4/0.3mm-Bi_2O_3$ and $0.1mm-BaSO_4/0.5mm-Bi_2O_3$ structures have been absorbed in both 33 keV and 37 keV characteristic X-rays. In addition, for high-energy X-rays greater than 90 keV, the shielding efficiency was shown close to lead. Also, the transport code of the FLUKA's photon transport code was showed cut-off on low-energy X-rays(below 33keV) and is limited to computerized X-rays of the low-energy X-rays. But, In high-energy areas above 40 keV, the relative error with MCNPX was found to be highly reliable within 6 %.