• Proceedings of the KIEE Conference
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• 1987.07b
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• pp.1532-1535
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• 1987

In this paper, we propose the algorithm for mask level simulation. The circuit parameters were extracted from the photomask data in format of bitmap. The extracted circuit parameter was transformed into the input file format of SPICE-16. And then the simulation of mask pattern data was carried out the SPICE-16. Thus the error operation of IC due to the mistake of photomask pattern could be prevented.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.3
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• pp.212-215
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• 2005

Modified illumination techniques have been used to enhance the resolution of the sub-wavelength lithography. But, since they shield the central part of incident light, the light efficiency is seriously degraded, which in turn reduces the throughput of a lithography process. In this research, we introduced an annular illumination structure that enhances the light efficiency with a concentric circular grating at the backside of a photomask. The efficiency of the structure was theoretically analyzed.

• Journal of the Optical Society of Korea
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• v.18 no.6
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• pp.762-765
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• 2014

We fabricated a periodically poled lithium niobate (PPLN) by direct laser-writing of a quasi-phase-matching (QPM) structure in photolithographic process. Because we do not need to prepare a photomask by electron-beam writing, the "maskless" process shortens the fabrication time and significantly reduces the cost. We evaluated the poling quality of the direct laser-written PPLN by measuring the diffraction noise from the surface relief pattern of the fabricated QPM grating and comparing the results to those from a conventional PPLN made with a photomask. The quality of the PPLN fabricated by direct laser-writing was shown to be equivalent to that fabricated by the conventional method.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.34D no.12
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• pp.62-67
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• 1997

The optical lithography wit an ArF excimer laser as a light source is expected to be used in the mass production of giga-bit DRAMs which require less than 0.2.mu.m minimum feature size. In this case, the distortion of a patterned image becomes very severe, since the lithography porcess is performed at the resolution limit. Traditionally, the photomask pattern was designed and revised with trial-and-error methods, such as repeated execution of process simulators or actual process experiments which require time and effort. Ths paper describes a program which automatically finds an optimal mask pattern. The program divides the mask plane into cells with same sizes, chooses a cell randomly, changes the transparent/opaque property of the cell, and eventually genrates a mask pattern which produces required image pattern. The program was applied to real DRAM cell patterns to produce mask patterns which genertes image patterns closer to object images than original mask patterns.

• Proceedings of the KIEE Conference
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• 2000.07c
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• pp.2257-2259
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• 2000

This paper reports on the design, fabrication and driving experiment of micro mirror array(MMA) for lithography process to apply to biochip fabrication Photolithography technology is applied to activate specific area on the surface of modified glass surface, DNA monomers are bound on the activated area of the glass surface. After repeat of DNA monomer synthesizing process, DNA single strand probes could be solid-synthesized on the glass substrate. Without using photomask, photolithography process is tried using micro mirror array(MMA). Photomask or mask alignment is not required in maskless photolithography process using micro mirror array.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.300.2-300.2
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• 2013

Periodically shaped pillar-arrays and hole-arrays were fabricated on a Si wafer. Geometric features are similar in a periodic length of 4 ${\mu}m$ and a depth of 2 ${\mu}m$. For the hole-array patterns, positive PR processes were performed. UV exposed PR patterns were removed during a developing process to leave shapes of inversely replicated from a glass photomask. Meanwhile, negative PR processes were taken for the pillar-array patterns. UV exposed PR patterns were remained on a Si substrate having a same feature of patterns of a glass photomask. For an electrical aspect, a pillar structure has a short carrier-collection length resulting in the improved open-circuit voltage of 609 mV from 587 mV of a planar device. An improved performance may be achieved to reduce recombination loss along the patterning surface.

• Proceedings of the Optical Society of Korea Conference
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• 2009.10a
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• pp.282-283
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• 2009

• Korean Journal of Materials Research
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• v.25 no.9
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• pp.462-467
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• 2015

Pellicle is defined as a thin transparent film stretched over an aluminum (Al) frame that is glued on one side of a photomask. As semiconductor devices are pursuing higher levels of integration and higher resolution patterns, the cleaning of the Al flame surface is becoming a critical step because the contaminants on the Al flame can cause lithography exposure defects on the wafers. In order to remove these contaminants from the Al frame, a highly concentrated nitric acid ($HNO_3$) solution is used. However, it is difficult to fully remove them, which results in an increase in the Al surface roughness. In this paper, the pellicle frame cleaning is investigated using various cleaning solutions. When the mixture of sulfuric acid ($H_2SO_4$), hydrofluoric acid (HF), hydrogen peroxide ($H_2O_2$), and deionized water with ultrasonic is used, a high cleaning efficiency is achieved without $HNO_3$. Thus, this cleaning process is suitable for Al frame cleaning and it can also reduce the use of chemicals.

• Journal of the Korean Society for Precision Engineering
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• v.25 no.1
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• pp.138-144
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• 2008

Micro-machining of a brittle material such as glass, silicon, etc., is important in micro fabrication. Particularly, micro-abrasive jet machining (${\mu}-AJM$) has become a useful technique for micro-machining of such materials. The ${\mu}-AJM$ process is mainly based on the erosion of a mask which protects brittle substrate against high velocity of micro-particle. Therefore, fabrication of an adequate mask is very important. Generally, for the fabrication of a mask in the ${\mu}-AJM$ process, a photomask based on the semi-conductor fabrication process was used. In this research a rapid mask fabrication technology has been developed for the ${\mu}-AJM$. By scanning the focused UV laser beam, a micro-mask pattern was fabricated directly without photolithography process and photomask. Two kinds of mask patterns were fabricated using SU-8 and photopolymer (Watershed 11110). Using fabricated mask patterns, abrasive-jet machining of Si wafer were conducted successfully.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.834-838
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• 2004

We report on a simple method of fabricating multimode transflective liquid crystal displays (LCDs) using the photoalignment technique. Using a self-masking process of ultraviolet light by the reflector as a photomask as well as a reflective mirror, the periodic multimode is obtained with no additional fabrication processes. Moreover, variations of the cell gap are not required for such trasflective LCDs