• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2007년도 추계학술대회 논문집
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• pp.318-321
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• 2007

CdSe nanoparticles were prepared by chemical solution methods using $CdCl_2{\cdot}4H_2O$ (or $Cd(NO_3)_ 2{\cdot}4H_2O$) and $Na_2SeSO_3$. The characteristics of CdSe nanoparticles were controlled by the react ion time, reaction temperature and reaction method as well as the surfactants. Cetyltrimethyl ammonium bromide(CTAB) was used as a capping agent to control the chemical reactions in aqueous solution. Polyvinylalcohol(PVA) was used as a templet in sono-chemical method. CdSe nanoparticles synthesized in aqueous solution showed homogeneous size distribution with relatively stable surface. CdSe nanoparticles synthesized in non-aqueous solution containing diethanolamine(DEA) showed the structure transformation from cubic to hexagonal as the reduction temperature increased from 80 to $160^{\circ}C$. Core shell CdSe was synthesized by sono-chemical method. Characteristics of CdSe nanoparticles were analyzed using transmission electron microscopy(TEM), x-ray photoelectron spectroscopy(XPS), x-ray diffraction(XRD), UV-Vis absorption spectra, fourier transform infrared spectroscopy(FT-IR) and photoluminescence spectra spectroscopy(PL). This paper presents simple routes to prepare CdSe nanoparticles for solar cell applications.

• 한국군사과학기술학회지
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• 제13권4호
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• pp.659-664
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• 2010

The ZnS/CdS thin films were made using 99.99% ZnS and CdS(Aldrich) powders in $7{\times}10^{-6}torr$. The ZnS layer was coated over the CdS layer on an AlOx membrane within a vacuum, at the average speed of $1{\AA}/sec$. After studying the ZnS/CdS and CdS thin films(both with the dimensions of 2.52nm), using fluorescence spectroscopy and comparing the respective results together, we found that although both of the resulting spectra peaked at 390nm, the ZnS/CdS thin films showed a narrower peak, and a higher intensity of photoluminescence than the CdS thin films. The particles of ZnS/CdS thin films also proved to be more homogeneous in size. In addition, the ZnS layer acted as a protective layer. Also, after studying the spectra of ZnS/CdS thin films taken 30 days after their preparation, we found no signs of aging. These results were verified through the scanning electron microscopy(SEM), EDX analysis, thin film X-ray diffraction, and luminescence spectroscopy.

• 한국결정성장학회지
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• 제33권4호
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• pp.132-138
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• 2023

Doped and undoped-BiVO₄ samples with different elements (Li, Mg) and amounts were synthesized with a hydrothermal method. The synthesized samples were characterized using various techniques including X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), UV-Vis diffusion reflectance spectroscopy (UV-Vis DRS), and photoluminescence (PL) spectroscopy. Photocatalytic activity of the samples was evaluated by measuring the degradation of methyl blue (MB) under visible light irradiation. The results indicated that the incorporation of Mg and Li into BiVO₄ caused lattice distortion, the presence of surface hydroxyl groups, a narrower band gap, and a reduced recombination ratio of photo-induced electron-hole pairs. Notably, the photocatalytic activity of Mg5%-Li5% co-doped BiVO₄ sample exhibited a significant improvement compared to that of undoped BiVO₄ sample.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2010년도 춘계학술대회 초록집
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• pp.85.1-85.1
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• 2010

$Cu(In,Ga)Se_2$ (CIGS) thin film solar cell is currently 19.5% higher efficiency and developing a large area technology. The structure of CIGS solar cell that make five unit layers as back contact, light absorption, buffer, front transparent conducting electrode and antireflection to make them sequentially forming. Materials and various compositions of thin film unit which also manufacture a variety method used by the physical and chemical method for CIGS solar cell. The construction and performance test of evaporator for CIGS thin film solar cell has been done. The vapor pressures were changed by using vapor flux meter. The vapor pressure were copper (Cu) $2.1{\times}10^{-7}{\sim}3.0{\times}10^{-7}$ Torr, indium (In) $8.0{\times}10^{-7}{\sim}9.0{\times}10^{-7}$ Torr, gallium (Ga) $1.4{\times}10^{-7}{\sim}2.8{\times}10^{-7}$ Torr, and selenium (Se) $2.1{\times}10^{-6}{\sim}3.2{\times}10^{-6}$ Torr, respectively. The characteristics of the CIGS thin film was investigated by using X-ray diffraction (XRD), scanning electron microscopy/energy dispersive spectroscopy (SEM/EDS) and photoluminescence (PL) spectroscopy using a He-Ne laser. In PL spectrum, temperature dependencies of PL spectra were measured at 1137 nm wavelength.

• Bulletin of the Korean Chemical Society
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• 제26권11호
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• pp.1776-1782
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• 2005

ZnSe/ZnS, UV-blue luminescent core shell quantum dots, were synthesized via a thermal decomposition reaction of organometallic zinc and solvent coordinated Selenium (TOPSe) in a hot solvent mixture. The synthetic conditions of the core (ZnSe) and the shell (ZnS) were independently studied at various reaction temperature conditions. The obtained colloidal nanocrystals at corresponding temperatures were characterized for their optical properties by UV-vis, room temperature solution photoluminescence (PL) spectroscopy, and further obtained powders were characterized by XRD, TEM, and EDXS analyses. The synthetic temperature condition to obtain the best PL emission intensity for the ZnSe core was 300 ${^{\circ}C}$, and for the optimum shell capping, the temperature was 135 ${^{\circ}C}$. At this temperature, solution PL spectrum showed a narrow emission peak at 427 nm with a PL efficiency of 15%. In addition, the measured particle sizes for the ZnSe/ZnS nanocomposite via TEM were in the range of 5 to 12 nm. Furthermore, we have synthesized water-soluble ZnSe/ZnS nanoparticles by capping the ZnSe/ZnS hydrophobic surface with mercaptoacetate (MAA) molecules. For the obtained aqueous colloidal solution, the UV-vis spectrum showed an absorption peak at 250 nm, and the solution PL emission spectrum showed a peak at 425 nm, which is similar to that for hydrophobic quantum dot ZnSe/ZnS. However, the calculated PL efficiency was relatively low (0.1%) due to the luminescence quenching by water and MAA molecules. The capping ligand was also characterized by FT-IR spectroscopy, with the carbonyl stretching peak in the mercaptoacetate molecule appearing at 1575 $cm ^{-1}$. Finally, the particle sizes of the MAA capped ZnSe/ZnS were measured by TEM, showing a range of 12 to 17 nm.

• 한국재료학회지
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• 제26권12호
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• pp.757-763
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• 2016

$Ho^{3+}/Yb^{3+}/Tm^{3+}$ tri-doped $NaY_{1-x}(WO_4)_2$ phosphors with proper doping concentrations of $Ho^{3+}$, $Yb^{3+}$ and $Tm^{3+}$ ($x=Ho^{3+}+Yb^{3+}+Tm^{3+}$, $Ho^{3+}$=0.04, 0.03, 0.02, 0.01, $Yb^{3+}$=0.35, 0.40, 0.45, 0.50 and $Tm^{3+}$=0.01, 0.02, 0.03, 0.04) were successfully synthesized via the microwave sol-gel route, and their upconversion properties were investigated. Well-crystallized microcrystalline particles showed fine and homogeneous microcrystalline morphology with particle sizes of $1-2{\mu}m$. The optical properties were comparatively examined using photoluminescence emission and Raman spectroscopy. Under excitation at 980 nm, the doped particles exhibited white emissions based on blue, green and red emission bands, which correspond to the $^1G_4{\rightarrow}^3H_6$ transitions of $Tm^{3+}$ in the blue region, the $^5S_2/^5F_4{\rightarrow}^5I_8$ transitions of $Ho^{3+}$ in the green region, the $^5F_5{\rightarrow}^5I_8$ transitions of $Ho^{3+}$, and the $^1G_4{\rightarrow}^3F_4$ and $^3H_4{\rightarrow}^3H_6$ transitions of $Tm^{3+}$ in the red region. The pump power dependence of the upconversion emission intensity and the Commission Internationale de L'Eclairage chromaticity coordinates of the phosphors were evaluated in detail.

• 한국진공학회지
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• 제7권1호
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• pp.11-16
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• 1998

본 연구에서는 GaAs의 selenium보호막형성 효과를 관찰하기 위하여 $Na_2$Se/NH$_4$OH 용액을 제조하고 X-선 광전자 분광기(X-ray photoelectron spectroscopy)와 photoluminescence(PL)를 이용하여 표면처리된 GaAs의 처리직후 및 대기중 노출에 따른 화학적 결합특성 및 광학적 특성을 관찰하였다. 용액처리 직후, 표면에는 As-Se결합이 형성 되었으며 Se는 한가지 산화상태인 -2가로 존재함이 관찰되었다. 또한 세정처리후의 표면보 다 Se용액처리 이후에 PL의 피이크 세기가 크게 증가됨으로부터 Se 용액처리가 GaAs의 표면상태밀도를 효과적으로 감소시킬 수 있음을 확인할 수 있었다. 그러나 처리 직후 공기 중 노출없이 관찰한 GaAs표면에서 산화막이 국부적으로 관찰되었으며 이렇게 처리과정중 생성된 산화막은 대기중 노출에 따라 산화막 성장을 유도하고 표면처리 효과를 저하시키는 주요인으로 작용함을 알 수 있었다. 이는 Se용액처리된 GaAs표면의 PL강도가 대기중 노출 에 따라 감소하며 세정처리후 GaAs표면의 PL강도와 유사한 값을 나타냄으로 부터도 확인 할 수 있었다.

• Korean Chemical Engineering Research
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• 제50권1호
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• pp.72-75
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• 2012

Strain-free AlGaN/GaN 나노선을 기판에 분산시킨 후 E-beam lithography(EBL)를 이용해 단일 나노선 자외선 센서를 제작하였다. 나노선의 구조적, 광학적 특성을 분석하기 위해 focused ion beam(FIB), photoluminescence, micro-Raman spectroscopy를 이용하여 나노선의 strain 및 형태를 조사하였다. 자외선 센서로서의 특성 여부를 확인하기 위하여 빛을 차단 한 조건과 자외선을 조사하는 조건하에서 current-voltage(I-V) 특성을 측정하였으며 각각 9.0 ${\mu}S$과 9.5 ${\mu}S$의 전기전도도(conductance)를 얻었다. 자외선 조사 조건하에서 excess carrier의 증가로 인해 전기전도도가 약 5%가 향상되었음을 알 수 있었다. 자외선을 반복적으로 조사하는 과정의 실험을 통해 우수한 포화 시간(saturation time)과 감쇠 시간(decay time)을 얻었다. 따라서 AlGaN/GaN 나노선은 자외선 센서로서 많은 가능성을 가지고 있음을 확인하였다.

• 전기전자학회논문지
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• 제27권4호
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• pp.556-560
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• 2023

본 연구에서는 4H-SiC Epi Surface에 Nitrogen implantation 공정이 깊은준위결함과 lifetime에 미치는 영향을 비교분석하였다. Deep Level Transient Spectroscopy (DLTS)와 Time Resolved Photoluminescence (TR-PL)을 사용하여 깊은준위결함과 carrier lifetime을 측정하였다. As-grown SBD에서는 0.16 eV, 0.67 eV, 1.54 eV 에너지 준위와 implantation SBD의 경우 0.15 eV 준위에서의 결함을 측정되었으며, 이는 nitrogen implantation으로 불순물이 titanium 및 carbon vacancy를 대체됨으로 lifetime killer로 알려진 Z_1/2, EH_6/7 준위 결함은 감소하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.336-336
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• 2013

Zinc oxide (ZnO) based transparent oxide semiconductors have been studied due to their high transmittance and electrical conductivity. Pure ZnO have unstable optical and electrical properties at high temperatures but doped ZnO thin films can have stable optical and electrical properties. In this paper, transparent oxide semiconductors of Y-doped ZnO thin films prepared by sol-gel method. The ionic radius of $Y^{3+}$ (0.90 A) is close to that of $Zn^{2+}$ (0.74 A), which makes Y suitable dopant for ZnO thin films. The Sn-doped ZnO thin films were deposited onto quartz substrates with different atomic percentages of dopant which were Y/Zn = 0, 1, 2, 3, 4, and 5 at.%. These thin films were pre-heated at $150^{\circ}C$ for 10 min and then annealed at $500^{\circ}C$ or 1 h. The structural and optical properties of the Y-doped ZnO thin films were investigated using field-emission scanning electronmicroscopy (FE-SEM), X-ray diffraction (XRD), UV-visible spectroscopy, and photoluminescence (PL).