• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1997.11a
• /
• pp.525-528
• /
• 1997

In this study, Eu(TTA)$_3$(phen) was synthesized and its films were prepared by vapor deposition method. Its films were characterized by UV-Vis absorption spectroscopy, Atomic Force Microscopy(AFM) and Photoluminescence(PL) measurements. Their electroluminescent(EL) characteristics were investigated by PL measurements, where a cell structure of glass substrate/ITO/Eu(TTA)$_3$(phen)/Al was employed. It was found that its films were well prepared without any decomposition and the film thickness could be controlled by adjusting the amount of Eu(TTA)$_3$(phen) in a boat. The EL spectrum of these films was almost the same as that of PL spectrum of these films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2007.11a
• /
• pp.367-367
• /
• 2007

Polymer/nanoparticle hybrids have been increasingly studied because of their enhanced properties for organic light emitting devices (OLEDs). In this study, we made poly(p-phenylene vinylene) (PPV) nanohybrid films by incorporation of Ag and $SiO_2$ nanoparticles into the PPV. A possible interaction between nanoparticles was investigated and especially we focused whether there is a change in the interaction between $SiO_2$ or Ag nanoparticles and matrix or not. The current characteristics of PPV nanohybrid films were analyzed by I-V and EL measurements. The optical properties were also investigated by UV-Vis spectroscopy and photoluminescence measurements.

• Korean Journal of Materials Research
• /
• v.15 no.7
• /
• pp.448-452
• /
• 2005

This study was based on organic electroluminescence display. Especially, TPD and $\alpha-NPD$ for the hole transport materials were synthesized by Ullmann reaction. This reaction was conducted between 3­methylphenylamine, 1-naphthylamine and 4,4'-diiodobiphenyl in toluene containing CuCl catalyst and KOH base. The structural property of reaction products were analyzed by FT-IR, $^1H-NMR$ spectroscopy, and thermal stability, reactivity and PL property were analyzed by melting point, yield and emission spectrum, respectively. The photoluminescence spectra of a pure TPD and $\alpha-NPD$ were observed at approximately 416nm and 438nm respectively. In this study, it was known that the melting point, yield, PL properties of TPD and $\alpha-NPD$ were changed by substituent group of amines.

• Journal of the Korean Applied Science and Technology
• /
• v.14 no.3
• /
• pp.79-87
• /
• 1997

In this study, MEH-PPV was synthesized and MEH-PPV and its mixtures with PMMA were deposited on substrates with Langmuir-Blodgett(LB) technique and their photoluminescent char acteristics were investigated using UV-Vis absorption spectroscopy, and photoluminescence(PL) measurements. The surface morphology of the LB films of MEH-PPV and its mixture with PMMA were investigated using Atomic Force Microscopy(AFM). Electroluminescent devices using LB films were fabricated with Al and ITO as a top and bottom electrode, respectively, and their I-V characteristics were investigated.

• Macromolecular Research
• /
• v.15 no.3
• /
• pp.216-220
• /
• 2007

A new polyfluorene-based copolymer having 2-ethylhexyloxy-5-methoxy-l,4-phenylene as an electron donating group and 2,5-diphenyl-oxadiazole as an electron withdrawing group was synthesized by the Suzuki coupling reaction. The obtained copolymer was characterized by $^1H-NMR,\;^{13}C-NMR$, and IR-spectroscopy. The weight average molecular weight ($M_w$) of the obtained polymer was 18,600 with a polydispersity index of 1.5. The maximum photoluminescence of the solution and film of the polymer was observed at 453 nm and 456 nm, respectively. A double-layer device with the configuration, ITO/PEDOT/copolymer/Al, emitted blue light at 460 nm.

• Journal of the Korean Vacuum Society
• /
• v.15 no.2
• /
• pp.209-215
• /
• 2006

We investigated the optical property and the electronic subband structure of InAs quantum dots in an InAsGa/GaAs well structure utilizing photoluminescence (PL), PL excitation (PLE) and near infrared transmission spectroscopy. From transmission and PLE spectra, we found three bound states in the InAs quantum dot and two bound states in InGaAs/GaAs quantum well, and correlated to the results of intersubband transitions observed in photocurrent spectrum.

• Particle and aerosol research
• /
• v.6 no.2
• /
• pp.51-59
• /
• 2010

ZnO quantum dots embedded in a silica matrix without agglomeration were synthesized from $TEOS:Zn(NO_3)_2$ solutions in one-step process by aerosol-gel method. It was successfully demonstrated that the size of ZnO Q-dots could be controlled from 2 to 7 mm verified by a high resolution transmission electron microscope observation. The line scanning energy dispersive X-ray spectroscopy(EDS) revealed that the Q-dots existed preferentially inside SiO2 sphere when Zn/Si < 0.5. However, the Q-dots distributed homogeneously all over the sphere when Zn/Si > 1.0. Blue-shifted UV/Vis absorption peak observation confirmed the quantum size effect on the optical properties. The photoluminescence(PL) emission peaks of the powders at room temperature were consistent with previous reports in the following aspects: 1) PL characteristics are dominated by two peaks of deep-level defect-related emissions at 2.4 - 2.8 eV, 2) the first defect-related peak at 2.4 eV was blue shifted due to the quantum size effect with decreasing the concentration of $Zn(NO_3)_2$(decreasing the size of ZnO q dots). More interestingly, the existence of surface-exposed ZnO q dots affects greatly the second defect PL peak at 2.8 eV.

• Journal of Korean Vacuum Science & Technology
• /
• v.4 no.1
• /
• pp.23-26
• /
• 2000

We have fabricated by metal organic chemical vapor deposition (MOCVD) In$\_$0.13/Ga$\_$0.87/N/GaN multiple quantum well (MQW) with thickness as thin as 10 A and barriers also of th same width on (0001) sapphire substrate. We have investigated this thin MQW by steady-state and time-resolved photoluminescence(PL) in picosecond time scale in a wide temperature range from 10 to 290 K. In the PL at 10 K, we observed a broad peak at 3.134 eV which was attributed to the quantum well emission of InGaN. The full width at half maximum (FWHM) of this peak was 129 meV at 10 K and its broadening at low temperatures was considered to be due to compositional fluctuations and interfacial disorder in the alloy. The narrow width of the quantum well was mainly responsible for the broadening of the emission linewidth. We also observed an intense and sharp peak at 3.471 eV of GaN barrier. From the temperature dependent PL measurements, the activation energy of the InGaN quantum well emision peak was estimated to be 69 meV. The lifetime of the quantum well emission was found to be 720 ps at 10 K, which was explained in terms of the exciton localization arising from potential fluctuations.

• Korean Journal of Materials Research
• /
• v.10 no.3
• /
• pp.241-245
• /
• 2000

Thick GaN films were grown on (0001) sapphire substrates using the direct reaction gallium and ammonia. The GaN films grew dominantly along [0002] direction, but included the growth of GaN(1010) planeq with V-shaped facetted surfaces at low temperature. With increasing growth temperature, however, the growth of GaN (1010) and (1011) planes was appeared from the films, which gives rise to the growth of hexagonal crystal with pyramid-shaped surface. The growth rate of GaN films increased with increasing growth temperature, but decreased at $1270^{\circ}C$ because the GaN films began to decompose into Ga and N at the temperature. It seemed that the crystal and optical qualities of the GaN films improve with increasing $NH_3$ flow rate. From X-ray diffraction (XRD) and photoluminescence (PL) measurements, it was observed that the yellow luminescence (YL) appeared to be significant as the peak intensity of (1010) plane of XRD spectra increased.

• Korean Journal of Materials Research
• /
• v.25 no.9
• /
• pp.480-486
• /
• 2015

$Pb_{1-x}MoO_4:Er^{3+}/Yb^{3+}$ phosphors with various doping concentrations of $Er^{3+}$ and $Yb^{3+}$ ($x=Er^{3+}+Yb^{3+}$, $Er^{3+}=0.05$, 0.1, 0.2, and $Yb^{3+}=0.2$, 0.45) are successfully synthesized using a microwave sol-gel method, and the up-conversion photoluminescence properties are investigated. Well-crystallized particles, which are formed after heat treatment at $900^{\circ}C$ for 16 h, exhibit a fine and homogeneous morphology with particle sizes of $2-5{\mu}m$. Under excitation at 980 nm, the $Pb_{0.7}MoO_4:Er_{0.1}Yb_{0.2}$ and $Pb_{0.5}MoO_4:Er_{0.05}Yb_{0.45}$ particles exhibit a strong 525 nm emission band, a weak 550 nm emission band in the green region, and a very weak 655 nm emission band in the red region. The Raman spectra of the doped particles indicate the presence of strong peaks at higher and lower frequencies induced by the disordered structures of $Pb_{1-x}MoO_4$ through the incorporation of the $Er^{3+}$ and $Yb^{3+}$ ions into the crystal lattice, which results in the unit cell shrinkage accompanying the new phase formation of the $MoO_{4-x}$ group.