• Transactions on Electrical and Electronic Materials
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• 제16권1호
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• pp.49-52
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• 2015

The change of the chemical structure of graphene oxide (GO) was investigated by periodical sampling of GO during exfoliation by using a sonicator. A significant amount of GO was exfoliated during up to 10 hr of sonication. Raman and Fourier transform infrared spectroscopy revealed a continuous increase of the G/D or C=C/C=O peak ratio of GO, as the sonication time increases. The photoluminescence (PL) intensity of each GO sample also decreased as a function of the sonication time. PL excitation spectra with three major peaks indicate that the sizes of $sp^2$ carbon clusters were enlarged by longer sonication. In addition, new excitation at around 300 nm proves the existence of newly developed small clusters of $sp^2$ carbons as the sonication time increased.

• 한국전기전자재료학회논문지
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• 제22권3호
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• pp.230-234
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• 2009

Hydrogen and Oxygen plasma treatments have been done on sonochemical grow ZnO nanorods by varying treatment temperature and time, The changes(position and intensity) in ultraviolet(UV) peaks and green peaks of photoluminescence(PL) spectroscopy have been measured, Experimental results showed; i) in the case of hydrogen plasma treatment, the blue shift of UV peak and the increase of PL intensity of the UV peak were observed as the increase of the process time and temperature, ii) in the case of oxygen plasma treatment, the red shift of green peak was observed and the ratio of $I_{Green}/I_{UV}$ was also increased, as the increase of the process time and the temperature.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.302.1-302.1
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• 2014

We report the growth of high quality zinc oxide (ZnO) thin films on amorphous glass substrates and their structural and optical characteristics. For the growth of ZnO films, mechanically exfoliated ultrathin graphite or graphene layers were used as an intermediate layer because ZnO does not have any heteroepitaxial relationship with the amorphous substrates, which significantly improved the crystallinity of the ZnO films. Structural and optical characteristics of the films were investigated using scanning and transmission electron microscopy, x-ray diffraction, and variable temperature photoluminescence spectroscopy. High crystallinity and excellent optical characteristics such as stimulated emission were exhibited from the high quality ZnO films grown on glass substrates.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2012년도 추계총회 및 학술대회 논문집
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• pp.137-138
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• 2012

ZnO 박막을 Sol-gel용액을 이용한 스핀코팅 방법으로 석영기판 위에 성장하였고 Sol-gel 용액의 온도 변화에 따른 구조적, 광학적 특성을 분석하였다. ZnO 박막의 구조적, 광학적 특성을 조사하기 위해 field-emission scanning electron microscopy, X-ray diffraction (XRD), photoluminescence (PL), 그리고 ultraviolet-visible (UV) spectroscopy을 사용하였다. PL 분석에서 ZnO 박막은 orange 계열의 발광을 하였으며, PL spectra는 3.3 eV 부근의 near-band edge emission (NBE) 피크와 2.0 eV 부근의 deep-level emission (DLE) 피크로 이루어져있다. 모든 sol-gel 용액 온도에서, DLE 피크가 NBE 피크보다 더 우세하고 이 DLE 피크는 sol-gel 용액의 온도가 증가함에 따라 점점 증가하다가 감소하는 것을 알 수 있다. 이런 DLE 피크는 산소 공공, 아연 공공, 침입형 산소, 침입형 아연 등과 같은 결함에 의한 것이며, ZnO 박막은 sol-gel 용액의 온도에 따라 결함의 특성이 변화하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.664-664
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• 2013

Red europium(III) and green terbium(III) activating phosphors have been doped and co-doped in gadolinium oxide supports by a hydrothermal method. Scanning electron microscope images reveal that they are one-dimensional nanorods of 40~50 wide and 250~300 nm long. The gadolinium oxide supports show Gd(OH)3 of hexagonal phase and Gd2O3 of cubic crystal structure before and after a thermal annealing, respectively based on X-ray diffraction analysis. Their physicochemical characteristics have further been examined by photoluminescence spectroscopy, FT-IR, UV-visible absorption, and optical microscope. The emission colors are characterized by CIE coordinates. In addition, the emissions from Eu(III) and Tb(III) are assigned to $5D0{\rightarrow}7FJ$ (J=0,1,2,3,4) and $5D4{\rightarrow}FJ$ (J=6,5,4,3), respectively.

• ETRI Journal
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• 제26권5호
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• pp.475-480
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• 2004

Self-assembled InAs quantum dots (QDs) embedded in an InAlGaAs matrix were grown on an InP (001) using a solid-source molecular beam epitaxy and investigated using transmission electron microscopy (TEM) and photoluminescence (PL) spectroscopy. TEM images indicated that the QD formation was strongly dependent on the growth behaviors of group III elements during the deposition of InAlGaAs barriers. We achieved a lasing operation of around 1.5 ${\mu}m$ at room temperature from uncoated QD lasers based on the InAlGaAs-InAlAs material system on the InP (001). The lasing wavelengths of the ridge-waveguide QD lasers were also dependent upon the cavity lengths due mainly to the gain required for the lasing operation.

• JSTS:Journal of Semiconductor Technology and Science
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• 제14권1호
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• pp.117-123
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• 2014

The fabrication and characterization of a Si/ZnO thin film heterojunction ultraviolet photodiode has been presented in this paper. ZnO thin film of ~100 nm thick was deposited on <100> Silicon (Si) wafer by atomic layer deposition (ALD) technique. The Photoluminescence spectroscopy confirms that as-deposited ZnO thin film has excellent visible-blind UV response with almost no defects in the visible region. The room temperature current-voltage characteristics of the n-ZnO thin film/p-Si photodiodes are measured under an UV illumination of $650{\mu}W$ at 365 nm in the applied voltage range of ${\pm}2V$. The current-voltage characteristics demonstrate an excellent UV photoresponse of the device in its reverse bias operation with a contrast ratio of ~ 1115 and responsivity of ~0.075 A/W at 2 V reverse bias voltage.

• 한국세라믹학회지
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• 제43권11호
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• pp.738-742
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• 2006

We report on the effects of co-doping with fluorine on properties of ZnO thin films grown by pulsed-laser deposition. The transport characteristics of Ag-F and Li-F codoped ZnO films were determined by Hall-effect measurements at room temperature. Ag-F codoped ZnO films showed n-type semiconducting behaviors. An ambiguous carrier type was observed in Li-F codoped ZnO films grown at a temperature of 500$^{\circ}C$ with the oxygen pressures of 20 and 200 mTorr. The qualities of the codoped ZnO films were studied by X-ray diffraction, atomic force microscopy, X-ray photoemission spectroscopy, and photoluminescence.

• 한국세라믹학회지
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• 제52권2호
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• pp.146-149
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• 2015

Silicate glasses with different $Nd_2O_3$ concentrations were prepared through conventional melt-quenching methods while PbS quantum dots (QDs) were precipitated through heat treatment. The peak wavelengths of absorption and the photoluminescence of PbS QDs shifted to the short-wavelength side as the concentration of $Nd_2O_3$ increased. The electron energy loss spectroscopy (EELS) indicated that $Nd^{3+}$ ions were preferentially distributed inside the PbS QDs instead of the glass matrix. In addition, there was no significant change in the lifetimes of the $Nd^{3+}:^4F_{3/2}$ fluorescence between the as-prepared glass ($607{\mu}s$) and the heat-treated glass($576{\mu}s$). $Nd^{3+}$ ions were surrounded by oxygen instead of sulfur and the Nd-O clusters probably acted as nucleating centers for the formation of PbS QDs inside the glasses.

• 마이크로전자및패키징학회지
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• 제19권2호
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• pp.73-78
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• 2012

The chemical, electrical, and optical properties of ZnO and Al-doped ZnO films after high temperature annealing were studied. The resistivity increased significantly after annealing at $600^{\circ}C$ under $10^{-10}$ Torr atmosphere. The mechanism of the resistivity change was explored using photoemission spectroscopy and photoluminescence spectrometer. The results indicated that the amount of oxygen deficient region O-Zn bonds decreased and oxygen vacancy was decreased after the high temperature vacuum annealing. The increase in the resistivity of ZnO and Al-doped ZnO films was resulted from the decrease in carrier concentration due to a decrease in the amount of oxygen deficiency.