• Journal of Sensor Science and Technology
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• v.14 no.6
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• pp.369-373
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• 2005

High quality CdTe single crystal for the solar cell fabrication was grown by vertical Bridgman method. The etch pits patterns of (111) surfaces of CdTe etched by Nakagawa solution was observed the (111)A compesed of Cd atoms with typical triangle etch pits of pyramid mode. From the photoluminescence measurement on (111)A, we observed free exciton ($E_{x}$) existing only high quality crystal and neutal acceptor bound exciton ($A^{0}$,X) having very strong peak intensity. Then, the full width at half maximum and binding energy of neutral acceptor bound exciton were 7 meV and 5.9 meV, respectively. By Haynes rule, an activation enery of impurity was 59 meV. Therefore, the origins on impurity level acting as a neutral acceptor were associated Ag or Cu elements.

• Journal of the Korean Ceramic Society
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• v.37 no.2
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• pp.134-139
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• 2000

The main objective of the present investigation is to show the feasibility of combinatorial chemistry by applying this method to phosphor syntehses. In this respect barium hexaaluminate phosphor was prepared by the split-pool combinatorial method, which enabled much more rapid search of optimum compositions of target phosphors than conventional synthetic methods. Barium hexaaluminate phosphors doped with Eu2+ exhibit blue emission while those co-doped with Mn2+ and Eu2+ exhibit green emission. Basically, the phosphor doped with 1.3 mole of Ba and 0.06~0.15 mole of Eu2+ exhibit the maximum value of emission intensity at 435${\mu}{\textrm}{m}$. Under the UV and VUV extitations, the barium hexaaluminate phosphor co-doped with Mn2+ and Eu2+ shows strong green emission.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.04b
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• pp.42-45
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• 2004

High quality CdTe single crystal for the solar cell fabrication was grown by vertical Bridgman method. The etch pits patterns of {111}surfaces of CdTe etched by Nakagawa solution was observed the {111} A composed of Cd atoms with typical triangle etch pits of pyramid mode. From the photoluminescence measurement on {111}A, we observed free exciton($E_x$) existing only higy quality crystal and neytral acceptor bound exciton($A^0$,X) having very strong peak intensity. Then, the full width at half maximum and binding energy of neutral acceptor bound exciton were 7 meV and 5.9 meV, respectively. By Haynes rule, an actibation energy of impurity was 59 meV. Therefore, the origins on impurity level acting as a neutral acceptor were associated Ag or Cu elements.

• Transactions on Electrical and Electronic Materials
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• v.16 no.1
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• pp.49-52
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• 2015

The change of the chemical structure of graphene oxide (GO) was investigated by periodical sampling of GO during exfoliation by using a sonicator. A significant amount of GO was exfoliated during up to 10 hr of sonication. Raman and Fourier transform infrared spectroscopy revealed a continuous increase of the G/D or C=C/C=O peak ratio of GO, as the sonication time increases. The photoluminescence (PL) intensity of each GO sample also decreased as a function of the sonication time. PL excitation spectra with three major peaks indicate that the sizes of $sp^2$ carbon clusters were enlarged by longer sonication. In addition, new excitation at around 300 nm proves the existence of newly developed small clusters of $sp^2$ carbons as the sonication time increased.

• Journal of Sensor Science and Technology
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• v.15 no.6
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• pp.457-461
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• 2006

To use the porous silicon as gas sensors, we made the MOPS structure from the porous silicon with Al evaporation and investigated the sensing characteristic of ethanol. When the MOPS structure is in contact with ethanol gas, the maximum peak of PL changes and it return to original intensity without contact. The MOPS structure had response time 0.78s and recovery time 4.13s when it is in contact with ethanol, which satisfied the required sensor standards. Further complimentary researches, however, are required to investigate the contact mechanism between MOPS structure and ethanol and to solve the surface contamination problem.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.2
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• pp.103-106
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• 2000

ZnO is a wide-bandgap II-IV semiconductor and has a variety of potnetial applications. ZnO exhibits good piezoelectric, photoelectric and optical properties, and is a good candidate for an electroluminescence device. ZnO films have been deposited on (001) sapphire by PLD technique. Nd:YAG pulsed laser was operated at a wavelength of $\lambda=355nm$. The ZnO films were deposited at oxygen pressures from base to 500 mTorr. The substrate temperatures was increased from $200^{\circ}C\; to\;700^{\circ}C$ films showed strong UV emission by increasing the partial oxygen pressure. We have investigated the relationship between partial oxygen pressure and the intensity of UV emission.

• Journal of the Semiconductor & Display Technology
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• v.11 no.1
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• pp.35-39
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• 2012

$YAlO_3:Tb{_x}^{3+}$ has been synthesized by a combustion process and the concentration x of Tb was varied from 0.001 and 0.05 mol% per mole of $YAlO_3$. The emission optical properties on the $YAlO_3:Tb{_x}^{3+}$ have been investigated by time-resolved photoluminescence spectra and decay curves of center wavelength. The emission color changes from blue to green with increasing the $Tb^{3+}$ concentration from x= 0.001 to 0.05 mole fraction in $YAlO_3$ host. This emission color change can be explained in terms of cross-relaxation processes. Decay curves of emission intensity indicate that the type of energy transfer is donor-acceptor transition.

• Bulletin of the Korean Chemical Society
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• v.23 no.8
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• pp.1111-1115
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• 2002

The photoluminescence of calixarene crystals has been studied as functions of temperature, time, and concentration. The vibronic bands shift to longer wavelength and become significantly sharper as temperature decreases. The experimental results r eveal that the structural transformation occur during the annealing process. Time-resolved spectra of calixarene at 12 K are monitored. Spectral features, which demonstrate characteristic of energy transfer processes, are not observed. The depopulation of excited state density is mainly controlled by unimolecular decay process dominating other decay processes. The lifetime was found to be 2.6 $\pm$ 0.1 ns. For the case of calixarene mixed with naphthalene, the fluorescence spectrum shows that the band centered at 340 nm lies 2840 $cm^{-1}$ below the relatively broad 310 nm band found for calixarene crystals. The spectra also exhibit that the emission intensity increases with increasing calixarene concentration. The results are evident that the calixarene emission is quenched by the naphthalene. Phosphorescence of calixarene mixed with naphthalene crystals is observed to determine whether the emission is due to naphthalene. The phosphorescence peaks were compared with the ground-state vibrational frequencies of naphthalene and found to be in good agreement. The results indicate that inter-molecular energy transfer occurs between calixarene and naphthalene.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.5
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• pp.415-418
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• 2009

$Zn_{2}SiO_{4}$:Mn green phosphors doped with Mg for PDP were synthesized by solid state reaction method. $Zn_{2}SiO_{4}$:Mn, Mg phosphors with increasing Mg concentration were changed from Rhombohedral to Orthorhombic structure. Photoluminescence intensity of $Zn_{2}SiO_{4}$:Mn phosphors doped with Mg 0.5 mol was definitely higher than that of Mg non-doped sample. The enhanced luminescence with doping Mg in the $Zn_{2}SiO_{4}$:Mn phosphors was interpreted by the increase of energy transfer from host to Mn ions with substitution Mg for Zn in the $Zn_{2}SiO_{4}$:Mn host.

• Transactions on Electrical and Electronic Materials
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• v.9 no.2
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• pp.57-61
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• 2008

The $(Y,Gd)_2O_3$:Eu phosphors were synthesized using the impregnation method in order to improve the performance of red-emitting phosphors for plasma display panels. $(Y,Gd)_2O_3$:Eu phosphors, with a particle size ranging from 150 and 200 nm, exhibited a strong red emission at around 615 nm. The emission intensity and particle size of the powders were controlled by adjusting the sintering temperature and raw material composition. The resulting particle size was very uniform and photoluminescence (PL) characteristic was excellent, being about twice that of commercial red phosphor.