• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.1017-1020
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• 2003

The effect of doping Gd, La for Y into $YVO_{4}:Eu^{3+}$ red phosphor on its photoluminescence(PL) intensity has been investigated. $YVO_{4}:$Eu-based phosphors were prepared by solid-state reaction at temperature above $1200^{\circ}C$. Under UV excitation(254, 365 nm), it was measured that $YVO_{4}:Eu^{3+}$ was superior to a commercial red phosphor (Y,Gd)$BO_{3}:Eu^{3+}$ in terms of PL intensity and CIE color coordinates. When La, Gd were doped into $YVO_{4}:Eu^{3+}$, the change in the structure of the host material was observed. In result, when the ($Y{1_x}La_{x})VO_{4}:Eu^{3+}$ phosphors were excited by 365 nm excitation, its PL intensity was improved up to about 30 % for the case of x being $0.4{\sim}0.6$.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.25 no.5
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• pp.188-192
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• 2015

Gemological and spectroscopic properties of HPHT synthetic diamonds from New Diamond Technology (NDT) company in St. Petersburg (Russia) were examined. Their color (colorless, near-colorless with some boron and Fancy blue with high boron content) and clarity ($VVS-SI_1$) grades were comparable to those of top natural diamonds. NDT synthetic diamonds fluoresced and phosphoresced blue or orange under SWUV light. Photoluminescence spectra revealed H3 center with very small intensity and NV centers. The intensity of H3 in NDT synthetic diamond has very weak in comparison with natural one. Using a combination of gemological and spectroscopic tests, gem-quality synthetic diamonds from NDT can be distinguished from natural diamonds of similar quality.

• Current Photovoltaic Research
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• v.4 no.1
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• pp.8-11
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• 2016

Strong deep ultraviolet emitting aniline and $TiO_2$ composite has been synthesized via hydrolysis and condensation reactions of titaniumisopropoxide ($Ti(OPr)_4$), aniline, and acetic anhydride. Three different weight ratios of aniline and $Ti(OPr)_4$ including 3:1 ($TiO_2An-A$), 2:1 ($TiO_2An-B$), and 1:1 ($TiO_2An-C$) were synthesized and characterized their optical properties. The FTIR spectra of the $TiO_2An-A$, -B, and -C showed the absorption intensities of the benzene ring stretching and bending vibrations, and benzene ring -CH stretching, bending, and deformation vibrations increased with the increase of the amount of aniline. The UV-visible absorption spectra showed that the UV region absorption was slightly increased with the increase of the amount of aniline. The photoluminescence (PL) intensities were exponentially increased with the increase the excitation wavelength from 307 to 317 nm, steadily increased from 300 to 313 nm and slowly increased from 302 to 308 nm for $TiO_2An-A$, -B, and -C, respectively and decreased thereafter. Therefore, the PL intensity is strongly dependent on the weight ratio of $Ti(OPr)_4$ and aniline.

• Journal of Sensor Science and Technology
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• v.11 no.6
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• pp.371-377
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• 2002

$Y_2O_3:Eu^{3+}$ and Li-doped $Y_2O_3:Eu^{3+}$ thin films have been grown on sapphire substrates using a pulsed laser deposition technique. The thin film phosphors were deposited at a substrate temperature of $600^{\circ}C$ under the oxygen pressure of 100, 200 and 300 mTorr. The films grown under different deposition conditions have been characterized using microstructural and luminescent measurements. The crystallinity and photoluminescence (PL) of the films are highly dependent on the oxygen pressure. The PL brightness data obtained from $Y_2O_3:Eu^{3+}$ films grown under optimized conditions have indicated that sapphire is one of the most promising substrate for the growth of high quality $Y_2O_3:Eu^{3+}$ thin film red phosphor. In particular, the incorporation of $Li^{+}$ ions into $Y_2O_3$ lattice could induce a remarkable increase of PL. The highest emission intensity was observed with LiF-doped $Y_{1.84}Li_{0.08}Eu_{0.08}O_3(Y_2O_3LiEu)$, whose brightness was increased by a factor of 2.7 in comparison with that of $Y_2O_3:Eu^{3+}$ films. This phosphor may promise for application to the flat panel displays.

• Journal of the Korean Vacuum Society
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• v.10 no.1
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• pp.67-71
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• 2001

Optical investigation on Zn-doped InGaN grown by MOCVD was performed by using the photoluminescence. Two different spectra related to Zn-acceptor-like centers occurred at room temperature, with broad emissions peaking at 2.81, and 2.60 eV, Specially, emissions interacted with phonon were observed at 2.81 eV where phonon energy was 92.5 meV From temperature dependent blue-band emissions of InGaN, we observe that the intensity in high energy region was quickly decreased more than that in low energy region with increased temperature, and the peak position at 2.81 eV was blue shift of about 18 meV, The blue-band emmissions would be originated from the transition related to the localized Zn complex centers.

• Transactions on Electrical and Electronic Materials
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• v.12 no.5
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• pp.218-221
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• 2011

We modified the optical properties of the $CuInS_2$ nanocrystal (NC) by alloying. Nanocrystals (NCs) with alloyed cores were synthesized by refluxing the as-synthesized $CuInS_2$ NCs with a mixture of cadmium acetate, zinc acetate and palmitic acid. The shift in emission wavelength of the NCs after shell layer formation was minimized by alloying. The photoluminescence (PL) spectra showed significant reduction of emission intensity. A detailed study on the emission process of NCs implies that the formation of shell layers with small lattice mismatch minimized the mismatch strain generated from the shell layers in contrast to core alloyed NCs. In particular, time-resolved PL spectra of the NCs showed a significant increase in the lifetime of excited carriers by modifying the band alignment of the NCs by modifying the shell composition.

• Journal of Powder Materials
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• v.19 no.5
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• pp.362-366
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• 2012

We report the effect of the chain length of carboxylic acid on the photoluminescence(PL) of $CuInS_2$/ZnS nanocrystals. $CuInS_2$/ZnS nanocrystals with emission wavelength ranging from 566 nm through 583 nm were synthesized with zinc acetate and carboxylic acids with various chain length. In this study, $CuInS_2$/ZnS nanocrystals prepared using long chain carboxylic acid showed more improved PL intensity. The origin of strong photoluminescence of the nanocrystals prepared with zinc acetate and long chain carboxylic acid was ascribed to improved size distribution due to strong reactivity between long chain carboxylic acid and zinc acetate.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.50 no.9
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• pp.444-449
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• 2001

In this paper, a novel ultraviolet sensor is presented based on a photoluminescent porous silicon. Porous silicon layer was formed by chemical etching of surface of pn junction in a $HF(48%)-HNO_3(60%)-H_20$ solution. Incident ultraviolet(UV) light is converted to visible light by photoluminescent porous silicon layer, and then this visible light generates electron-hole pairs in the pn junction, which produces a photocurrent flow through the device. In order to maximize detection efficiency, the peak sensitivity wavelength of the pn junction diode was matched with the peak wavelength of Photoluminescence from porous silicon layer. The porous silicon ultraviolet sensor showed a large output current as UV intensity increases and but very low sensitivity to visible light. The detection sensitivity of porous silicon sensor was calculated as 2.91mA/mW. These results are expected to open up a possibility that the present porous silicon sensor can be used for detecting UV light in a visible background, compared to silicon UV detectors which have an undesirable response to visible light.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.237-242
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• 2001

The stochiometric mix of evaporating materials for the CuGaSe$_2$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, CuGaSe$_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were 610$^{\circ}C$ and 450$^{\circ}C$, respectively The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). From the photocurrent spectrum by illumination of perpendicular light on the c-axis of the CuGaSe$_2$ single crystal thin film, we have found that the values of spin orbit splitting Δ So and the crystal field splitting ΔCr were 91 meV and 249.8 meV at 20 K, respectively. From the Photoluminescence measurement on CuGaSe$_2$ single crystal thin film, we observed free excition (Ex) existing only high quality crystal and neutral bound exiciton (D$^{\circ}$,X) having very strong peak intensity. Then, the full-width-at-half-maximum(FWHM) and binding energy 7f neutral acceptor bound excision were 8 meV and 35.2 meV, respectivity. By Haynes rule, an activation energy of impurity was 355.2 meV

• Transactions on Electrical and Electronic Materials
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• v.6 no.4
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• pp.169-172
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• 2005

[ $Y_2O_3:Eu$ ] powder was synthesized using a solution-combustion method by dissolving $(CH_3CO_2)_3Y$ and $(CH_3CO_2)_3$ Eu in methyl-alcohol solution. Results from X-ray diffractometery (XRD), thermogravimetry (TG)-differential thermal analysis (DTA) show that $Y_2O_3:Eu$ crystallizes completely when the dry powder is sintered at $500^{\circ}C$. The investigated optical properties were the photoluminescence emission spectra, the excitation spectra and luminescence decay curve. Europium (Eu) concentration had no observable effect on the optical spectrum which depended on the emission intensity. The mean lifetime of synthesized phosphors was $2.3\~2.6 ms$.