• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.1019-1021
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• 2002

In place of $Alq_3$ for EL, various Zn-Complex with fluorenscent chromophores were synthesized. PL of Zn-Complex substituted with electron donor group at 2 or 4 position occurred to bathochromic shift of emission$(\lambda_{max})$ and PL intensity was weaker than Zn-Complex non-substituted with electron donor group.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.204-206
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• 2009

Luminescent films were prepared by infiltration of tris(dibenzoylmethane) mono(1, 10-phenanthroline) europium incorporated ormosil into colloidal $SiO_2$ photonic crystal templates. The PL intensity of the infiltrated film into the template was about 13 times higher than that of the plane film prepared without the template.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.636-639
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• 2001

InGaN/GaN multiple quantum wells (MQWs) grown with various growth interruptions between the InGaN well and GaN barrier by metal-organic chemical vapor deposition were investigated using photoluminescence, high-resolution transmission electron microscopy, and energy filtered transmission electron microscopy (EFTEM). The luminescence intensity of the MQWs with growth interruptions is abruptly reduced compared to that of the MQW without growth interruption. Also, as the interruption time increases the peak emission shows a continuous blue shift. Evidence of indium clustering is directly observed both by using an indium ratio map of the MQWs and from indium composition measurements along an InGaN well using EFTEM. The higher intensity and lower energy emission of light from the MQW grown without interruption showing indium clustering is believed to be caused by the recombination of excitons localized in indium clustering regions and the increased indium composition in these recombination centers.

• Journal of Information Display
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• v.1 no.1
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• pp.35-41
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• 2000

Manganese-doped $Zn_2SiO_4$ phosphors well known as a green emitter with high luminescence efficiency were prepared by the homogeneous precipitation method, and their photoluminescence properties under vacuum-ultraviolet (VUV) excitation were investigated. $Zn_2SiO_4$:Mn phosphors obtained by this method have exhibited a high luminance of property and a spherical shape of particles. In particular, the green emission intensity of zinc orthosilicate prepared as containing around 2 mole% of manganese was much stronger than that of the commercial $Zn_2SiO_4$:Mn phosphor, while the decay time was longer. However, addition of $Al^{3+}$ and $Li^+$ into $Zn_2SiO_4$:Mn composition has significantly diminished the decay time of the phosphor without much degradation of the emission intensity.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.3
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• pp.230-234
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• 2009

Hydrogen and Oxygen plasma treatments have been done on sonochemical grow ZnO nanorods by varying treatment temperature and time, The changes(position and intensity) in ultraviolet(UV) peaks and green peaks of photoluminescence(PL) spectroscopy have been measured, Experimental results showed; i) in the case of hydrogen plasma treatment, the blue shift of UV peak and the increase of PL intensity of the UV peak were observed as the increase of the process time and temperature, ii) in the case of oxygen plasma treatment, the red shift of green peak was observed and the ratio of $I_{Green}/I_{UV}$ was also increased, as the increase of the process time and the temperature.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.137-140
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• 2001

To improve structural properties and induce higher conductivity, we have annealed emitting layer. The temperature condition was investigated by various experiment. To observe the surface morphology of emitting layer, measured the AFM and the X -ray diffraction pattern of P3HT film is shown. It is move to slightly low angles and diffraction peaks also become much sharper. After annealing of emitting layer, EL intensity and Voltage-current-luminance curve is better as compared with untreated. But PL intensity was decreased. It is known that by emission principal. After annealing of emitting layer, EL devices enhances the interface adhesion between the emissive polymer and Indium-tin-oxide electrode, which takes a critical role to improve the emitting properties of EL devices.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.1279-1282
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• 2009

The luminescence properties of a potential blue-emitting $RbBaPO_4:Eu^{2+}$ phosphor substituted with various metal ions have been investigated. The main emission wavelength of the phosphor samples was red-shifted by the substitution with K and Sr ions. The maximum peak intensity was obtained from the sample $Rb_{0.25}K_{0.75}Ba_{0.99}Eu_{0.01}PO_4$ which showed 144% relative intensity versus that of BAM:$Eu^{2+}$ phosphor under 254 nm excitation.

• Bulletin of the Korean Chemical Society
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• v.19 no.12
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• pp.1320-1325
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• 1998

ZnGa2O4: Mn phosphors were prepared by a new chemical process, and their photoluminescence and electron paramagnetic resonance characteristics were investigated. The chemical method showed a low temperature formation of phosphors and a rod-type shape of particles. The strong ultraviolet emission was observed in the undoped ZnGa2O4 phosphor, while strong green emission in the Mn2+-activated ZnGa2O4 phosphor. The green emission intensity of the phosphor prepared by the chemical method was much stronger than that prepared by the conventional method. This difference with preparation methods was interpreted as due to the difference in the distribution of Mn2+ in the host lattice. From EPR results, it was explained that the line intensity of the undoped ZnGa2O4 is associated with the electrical conductivity of this material and the concentration quenching of green luminescence of ZnGa2O4: Mn at higher Mn2+ concentration is attributed to the coupling by exchange interaction between Mn2+ ions.

• Korean Journal of Materials Research
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• v.12 no.10
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• pp.771-775
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• 2002

$Gd_2$$O_3$:Eu phosphor particles with nano-sized and non-aggregation characteristics were prepared by spray pyrolysis using the spray solution containing polymeric precursor and $Li_2$$CO_3$ flux material. Nano-sized $Gd_2$$O_3$:Eu phosphor particles had higher brightness than the commercial $Y_2$$O_3$:Eu phosphor particles. The $Gd_2$$O_3$:Eu phosphor particles had nano-size and non-aggregation characteristics after heat-treatment at $1000^{\circ}C$ when the addition amount of $Li_2$$CO_3$ flux was 1 wt.% and 3 wt.%. The mean size of particles were 200 nm and 400 nm when the amount of flux was 1 wt.% and 3 wt.%, respectively. The prepared phosphor particles had higher photoluminescence intensity than that of the commercial product regardless of the content of$ Li_2$$CO_3$ flux and had the maximum brightness when the content of flux was 5 wt %. The photoluminescence intensity of the nano-sized $Gd_2$$O_3$:Eu phosphor particles containing 3 wt.% $Li_2$$CO_3$ flux was 125% in comparison with that of the micron-sized $Y_2$$O_3$:Eu commercial product.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.17 no.2
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• pp.57-62
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• 2007

Willemite green phosphor powders have been prepared by the metallo-organic decomposition (MOD) method, and the photoluminescence and phase formation were studied as a function of both the firing temperature ($800{\sim}1100^{\circ}C$) and the concentration of Mn activator ($4{\sim}12 mol%$). Under 254 nm excitation source, the emission intensity of the phosphors increased with increasing the firing temperature from 800 to $1000^{\circ}C$. From the XRD analysis, the powders heat-treated above $1000^{\circ}C$ showed willemite crystal structure. The maximum emission intensity was obtained far the phosphors heat-treated at $1000^{\circ}C$ with 8 mol% of Mn content. The concentration quenching was occurred when the Mn concentration exceeded 10 mol%. The phosphor particles showed spherical shapes with the average size of $0.4{\sim}0.5{\mu}m$ by the SEM morphology.