• Bulletin of the Korean Chemical Society
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• v.21 no.7
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• pp.701-704
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• 2000

Fluorene and carbazole-containing distyrylarylene model and polymeric fluorophores were prepared by reacting 2,7-dibromo-9-butylfluorene and 3,6-dibromo-9-butylcarbazole with styrene and divinylbenzene using the Heck reaction for the chemiluminesc ence. The UV-vis absorbance, photoluminescence (PL) as well as the chemiluminescence (CL) characteristics of the model and polymeric fluorophores were measured. Sodium salicylate-catalyzed reaction of bis(2,4,6-trichlorophenyl)oxalate (TCPO) with hydrogen peroxide produced a strong chemiluminescent blue light emission with 439-489 nm in the presence of the fluorophore. The wave-length of CL light was similar to that of photoluminescence. The chemiluminescent intensity was decayed according to the exponential equation.The glow of CL maintained more than 12 hr and was visible with naked eye.

• Journal of the Korean Physical Society
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• v.73 no.11
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• pp.1725-1728
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• 2018

We synthesized the gold nanoparticles (Au NPs)-embedded methylammonium lead iodide ($MAPbI_3$) film for the first time. The effects of metal nanoparticles on $MAPbI_3$ perovskite were systematically studied using UV-Vis absorption and photoluminescence (PL) measurements. As a result, the 20-nm-sized Au NPs-embedded $MAPbI_3$ film exhibited a 4.15% higher absorbance than the bare $MAPbI_3$ film. Moreover, the average PL intensity of the Au NPs-embedded $MAPbI_3$ film increased by about 75.25% over the bare $MAPbI_3$ film. Therefore, we have confirmed that addition of the Au NPs has a positive effect on the optical properties of $MAPbI_3$, and we believe that this study will provide a basic insight into the metal nanoparticles-embedded perovskite thin films for the future optoelectronic applications.

• Journal of the Korean Physical Society
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• v.73 no.11
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• pp.1729-1734
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• 2018

Organic-inorganic halide perovskite single crystals undergo phase transition of being cubic, tetragonal, or orthorhombic depending on the temperature. We investigated the $CH_3NH_3PbBr_{3-x}I_x$ single crystals grown by the inverse temperature crystallization method with temperature-dependent UV-Vis absorption and photoluminescence. From the temperature-dependent absorption measurement, the optical band gap is extracted by derivation of absorption spectrum fitting and Tauc plot. In our results, $CH_3NH_3PbBr_{3-x}I_x$ single crystals show that an abrupt change in optical band gap, PL peak position and intensity appears around 120 K - 170 K regions, indicating the phase transition temperature.

• Journal of Ceramic Processing Research
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• v.13 no.spc2
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• pp.189-192
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• 2012

Manufacturing process for silicate glass phosphors containing Eu2+ activator and their photoluminescence property have been studied. We adopted powder sintering process instead of traditional glass melting process for making glass phosphor. At first, phosphor powders were synthesized at 1200 ℃ for 2-3 hours under a reducing atmosphere with 10% H2-90% N2 gas mixture. The reduced powders were compacted into discs and then the discs weresintered at 1400 ~ 1500 ℃ for 1 hr under a reducing atmosphere of 5H2-95% N2. The enhancement of PL intensity by Al2O3 addition, XPS binding energy shift of Si 2p and O 1s, sintering shrinkage, and crystallization were characterized.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1568-1571
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• 2005

We have evaluated thermal stability of a $BaAl_2Si_2O_8:Eu^{2+}$ $(BAS:Eu^{2+})$, which have polymorph property such as hexagonal, monoclinic structure depending upon firing temperature. When both polymorph $BAS:Eu^{2+}$ were baked in air at 500 $^{\circ}C$ for 30 min, the photoluminescence (PL) intensity of $monoclinic-BAS:Eu^{2+}$ was maintained of the initial intensity. However, the PL intensity of $hexagonal-BAS:Eu^{2+}$ decreased significantly, corresponding to about 34 %. From analyses of Rietveld refinement, the difference of thermal stability of both $BAS:Eu^{2+}$ can be ascribed to both crystal structure of host materials and the average interatomic distances between $Eu^{2+}$ ion and oxygen their crystal structure which plays a key role of shield for Eu2+ ions against oxidation atmosphere.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.34D no.9
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• pp.50-55
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• 1997

In order to improve the electrical performance of ITO/InP solar cells, sulfur passivation technique was employed using (N $H_{4}$)$_{2}$ $S_{x}$ solution. Passivation effects were analyzed by measuring the short circuit current density ( $J_{sc}$ ) of solar cells and photoluminescence (PL) of ITO/InP interfaces. This paper firstly reports the sulfur passivation effects by investigating the correlation between the PL intensity and the short circuit current. Generally, PL intensity and the short circuit current of sulfur passivated sampels wer eincreased, and showed the same trend. Especially, samples prepared at 60.deg. C (N $H_{4}$)$_{2}$ $S_{x}$ solution exhibited the highest $J_{sc}$ and PL intensity. These results demonstrated that the short circuit currents was influenced by the ITO/InP interface states.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.252-255
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• 2003

The pulsed laser deposition process modeling is investigated using neural networks based on radial basis function networks and multi-layer perceptron. Two input factors are examined with respect to the PL intensity. In order to minimize the joint confidence region of fabrication process with varying the conditions, D-optimal experimental design technique is performed and photoluminescence intensity is characterized by neural networks. The statistical results were then used to verify the fitness of the nonlinear process model. Based on the results, this modeling methodology can be optimized process conditions for pulsed laser deposition process.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.108-111
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• 2001

ZnO thin films on (001) sapphire substrates have been deposited by pulsed laser deposition(PLD) technique for light emitting device applications. We have controlled the emission intensity of UV and visible light, depending on film thickness and various post-annealing time. UV emission became strong as the thickness of ZnO thin films increased. The intensity of visible light was strong as post-annealing temperature increased. The optical properties of the ZnO thin films were characterized by PL(photoluminescence) and the structural properties of the ZnO were characterized by XRD for the application of ZnO light emission device.

• Korean Journal of Optics and Photonics
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• v.26 no.5
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• pp.265-268
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• 2015

An inorganic electroluminescence device based on a green ZnS:(Cu,Al) phosphor was fabricated by a screen printing method. Graphene was added to the phosphor layer to increase the electroluminescence intensity. As the graphene concentration increased, the photoluminescence intensity decreased; on the other hand, the electroluminescence intensity increased, up to 0.6 wt%.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.108-111
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• 2001

ZnO thin films on (001) sapphire substrates knave been deposited by pulsed laser deposition(PLD) technique for light emitting device applications. We have controlled the emission intensity of UV and visible light, depending on film thickness and various post-annealing time. UV emission became strong as the thickness of ZnO thin films increased. The intensity of visible light was strong as post-annealing temperature increased. The optical properties of the ZnO thin films were characterized by PL(photoluminescence) and the structural properties of the ZnO were characterized by XRD for the application of ZnO light emission device.