• Current Optics and Photonics
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• v.5 no.2
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• pp.173-179
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• 2021

The electroluminescence (EL) intensities of GaN-based light-emitting diodes (LEDs) are estimated based on their photoluminescence (PL) properties. The PL intensity obtained under open-circuit conditions is divided into two parts: the PL intensity under a forward bias lower than the optical turn-on voltage, and the difference between the PL intensities under open-circuit conditions and under forward bias. The luminescence induced by photoexcitation under a constant forward bias lower than the optical turn-on voltage is primarily the PL from the excited area of the LED. In contrast the intensity difference, obtained by subtracting the PL intensity under the forward bias from that under open-circuit conditions, contains the EL induced by the photocarriers generated during photoexcitation. In addition, a reverse photocurrent is generated during photoexcitation under constant forward bias across the LED, and can be correlated with the PL-intensity difference. The relationship between the photocurrent and PL-intensity difference matches well the relationship between the injection current and EL intensity of LEDs. The ratio between the photocurrent generated under a bias and the short-circuit current is related to the ratio between the PL-intensity difference and the PL intensity under open-circuit conditions. A relational expression consisting of the ratios, short-circuit current, and PL under open-circuit conditions is proposed to estimate the EL intensity.

• Korean Journal of Materials Research
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• v.16 no.8
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• pp.485-489
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• 2006

The preparation conditions of $YBO_3$:Eu phosphor particles having the maximum photoluminescence intensity under vacuum ultraviolet in the spray pyrolysis were optimized. The $YBO_3$:Eu phosphor particles prepared from spray solution with stoichiometric amount of boric acid had the maximum photoluminescence intensity. The $YBO_3$:Eu phosphor particles with pure phases were formed at low post-treatment temperatures because of fast reaction of yttrium and boron components without volatilization of boron component. The prepared $YBO_3$:Eu phosphor particles by spray pyrolysis had fine size, narrow size distribution and regular morphology. The photoluminescence intensity of the prepared $YBO_3$:Eu phosphor particles under vacuum ultraviolet was 103% of the commercial $(Y,Gd)BO_3$:Eu phosphor particles.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.185-187
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• 2004

The electron concentration of ZnO thin film fabricated by pulsed laser deposition was controlled by varying oxygen gas pressure. The electron concentration of ZnO was increased from $10^{17}\;to\;10^{19}/cm^3$ as oxygen gas pressure increased from 20 mTorr to 350 mTorr. Ultraviolet(UV) intensity of photoluminescence of ZnO was controlled, too. UV intensity of ZnO was increased as oxygen gas pressure increased from 20 mTorr to 350 mTorr. The relation between electron concentration and UV intensity was investigated.

• Korean Journal of Materials Research
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• v.15 no.6
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• pp.408-412
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• 2005

[ $Ba_{1.5}Sr_{0.5}SiO_4:Eu$ ] phosphor particles with high photoluminescence intensity under long wavelength ultraviolet were prepared by spray pyrolysis. We investigated the effect of $NH_4F$ flux added into starting solution on the morphology and photoluminescence intensity of $Ba_{1.5}Sr_{0.5}SiO_4:Eu$ phosphor prepared by spray pyrolysis. $Ba_{1.5}Sr_{0.5}SiO_4:Eu$ phosphor particles prepared from starting solution containing $NH_4F$ flux had the maximum photoluminescence intensity at the post-treatment temperature of $1200^{\circ}C$ and the maximum photoluminescence intensity of $Ba_{1.5}Sr_{0.5}SiO_4:Eu$ phosphor particles prepared from the starting solution containing $NH_4F$ flux was $137\%$ of that of the phosphor particles prepared from the starting solution without flux material. $Ba_{1.5}Sr_{0.5}SiO_4:Eu$ phosphor particles prepared from starting solution containing $NH_4F$ flux had larger size and more aggregated morphology than those prepared from starting solution without flux material. The photoluminescence intensity of $Ba_{1.5}Sr_{0.5}SiO_4:Eu$ phosphor particles prepared from starting solution containing $NH_4F$ flux above $3wt.\%$ had high photoluminescence intensities. The addition amount of $NH_4F$ flux showing the maximum photoluminescence intensity was $12wt.\%$. The optimum amount of $NH_4F$ flux was $5wt.\%$ when we considered the morphological and photoluminescence characteristics of $Ba_{1.5}Sr_{0.5}SiO_4:Eu$ ohosphor particles prepared by spray pyrolysis.

• Ceramist
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• v.10 no.3
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• pp.7-14
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• 2007

PbS QDs in glasses have attracted much attention due to the potentials for near-infrared applications. Growth of PbS QDs in the glass is discussed and size of PbS QDs formed in the glass can be tuned by varying the thermal treatment conditions. Hyperbolic-band approximation and four-band envelope function provide good simulation of the exciton energies of PbS QDs. Absorption and photoluminescence of PbS QDs was tuned into $1{\sim}2{\mu}m$ wave-length regime with large full width at half maximum photoluminescence intensity (>160 nm). Photoluminescence intensity of PbS QDs in the glasses was closely related to size of quantum dots, temperature, excitation and defects. Decrease in temperature shifted the photoluminescence bands to shorter wavelength and switched the photoluminescence from darkened state and brightened state.

• Journal of Sensor Science and Technology
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• v.13 no.3
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• pp.252-257
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• 2004

$Y_{2}O_{3}:Eu^{3+}$ thin films have been grown on $Al_{2}O_{3}$(0001) substrates by a pulsed laser deposition (PLD) method. The phosphor thin films were deposited at a substrate temperature of 500, 600, and $700^{\circ}C$ under the oxygen pressure of 100, 200, and 300 mTorr. The crystallinity, surface roughness and photoluminescence of the films are highly dependent on the substrate temperature and oxygen pressure. The films grown on $Al_{2}O_{3}$(0001) substrate even under the different substrate temperatures and oxygen pressures exhibited (222) preferred orientation. The luminescent spectra exhibited strong luminescence of ${^{5}D_{0}}-{^{7}F_{2}}$ transition within $Eu^{+3}$ peaking at 612 nm. The crystallinity and luminescence intensity of the films have been improved as the substrate temperature increasing. With increase of oxygen pressure from 50 to 300 mTorr, the crystallinity of the films has been uniformly decreased. The photoluminescence intensity and surface roughness have similar behaviors as a function of oxygen pressure. At 200 mTorr, both photoluminescence intensity and surface roughness show a maximum.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.9
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• pp.846-850
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• 2005

[ $SrTiO_3$ ]:Al, Pr red phosphors for FED were synthesized by solid state reaction method. The dependence of their luminescent properties on Sr and Al concentration was investigated. The $SrTiO_3$: Al, Pr phosphors showed the characteristic X-ray diffraction patterns of the perovskite structure. Photoluminescence intensity and lattice constant in $SrTiO_3$: Al, Pr phosphors changed in quite a similar manner with Sr concentration. Photoluminescence intensity increased with increasing lattice constant, and the decrease of photoluminescence intensity and lattice constant occurred in the vicinity of 1 mol Sr concentration.

• Journal of the Korean Ceramic Society
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• v.51 no.5
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• pp.413-417
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• 2014

The effect of calcination treatment of raw powders prior to high temperature synthesis of Ca-${\alpha}$-SiAlON:$Eu^{2+}$ phosphor was investigated. Based on data acquired from thermogravimetric analysis, calcination temperatures were set at 600, 750, and $900^{\circ}C$. Compared to the photoluminescence (PL) intensity of direct synthesis without calcination, a similar intensity was found for the $600^{\circ}C$ treatment, a 19% increased PL intensity was found for the $750^{\circ}C$ treatment, and a 23% decreased PL intensity was found for the $900^{\circ}C$ treatment. Observation of the particle morphology of the synthesized phosphors revealed that the material transport promoted through the agglomerates formed by the $750^{\circ}C$ treatment led to enhanced PL intensity. On the other hand, the oxidation of the starting AlN particles during the $900^{\circ}C$ treatment resulted in decreased photoluminescence.

• Bulletin of the Korean Chemical Society
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• v.32 no.11
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• pp.3861-3864
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• 2011

Rhodamine B dye (RB) has been introduced into the mesoporous silica (SBA15) and Ag anchored mesoporous silica by applying solution impregnation method. Surface treatment of SBA15 with 3-aminopropyltrimethoxysilane (APTMS) facilitates selective anchoring of the RB molecules on SBA15. The photoluminescence spectra of RB confined within SBA15 indicates higher emission intensity, than that of the RB solid, particularly in the presence of Ag nanoparticles. The significant enhancement in photoluminescence intensity is attributed to the local enhancement of the optical fields near the molecules by interactions with silver plasmons.

• Korean Journal of Materials Research
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• v.4 no.5
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• pp.516-523
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• 1994

The interfacial coherency of metal organic chemical vapor deposition grown InGaAsP/InP heterostructure wafers was examined and their influences on the optoelectronic properties were investigated in this study. (400) symmetric and (511) asymmetric reflections were employed to measure the lattice coherency. Existence of misfit dislocations was examined by x-ray topography and reverified by photoluminescence (PL) imaging. PI, measurements were performed, and higher PL intensity was obtained for elastically strained samples and lower intensity for plastically deformed samples. The highest PL intensity was obtained for the sample lattice matched at the growth temperature. PL full-width at half maximum (FWHM) was found to depend on the degree of lattice mismatch. A correlatior between x-ray FWHM and PL intensity was empirically established. The results presented demonstrate that the interfacial coherency is of primary significance in affecting the optoelectronic properties through elastic strain and plastic deformation.