• Title/Summary/Keyword: Photolithography process

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Real-Time Scheduling System Re-Construction for Automated Manufacturing in a Korean 300mm Wafer Fab (반도체 자동화 생산을 위한 실시간 일정계획 시스템 재 구축에 관한 연구 : 300mm 반도체 제조라인 적용 사례)

  • Choi, Seong-Woo;Lee, Jung-Seung
    • Journal of Intelligence and Information Systems
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    • v.15 no.4
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    • pp.213-224
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    • 2009
  • This paper describes a real-time scheduling system re-construction project for automated manufacturing at a 300mm wafer fab of Korean semiconductor manufacturing company. During executing this project, for each main operation such as clean, diffusion, deposition, photolithography, and metallization, each adopted scheduling algorithm was developed, and then those were implemented in a real-time scheduling system. In this paper, we focus on the scheduling algorithms and real-time scheduling system for clean and diffusion operations, that is, a serial-process block with the constraint of limited queue time and batch processors. After this project was completed, the automated manufacturing utilizations of clean and diffusion operations became around 91% and 83% respectively, which were about 50% and 10% at the beginning of this project. The automated manufacturing system reduces direct operating costs, increased throughput on the equipments, and suggests continuous and uninterrupted processings.

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Fabrication of 3D Micro Structure by Dual Diffuser Lithography (듀얼 디퓨저 리소그래피를 이용한 3 차원 마이크로 구조의 제작)

  • Han, Dong-Ho;Hafeez, Hassan;Ryu, Heon-Yul;Cho, Si-Hyeong;Park, Jin-Goo
    • Korean Journal of Materials Research
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    • v.23 no.8
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    • pp.447-452
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    • 2013
  • Recently, products that a have 3-dimensional(3D) micro structure have been in wide use. To fabricate these 3D micro structures, several methods, such as stereo lithography, reflow process, and diffuser lithography, have been used. However, these methods are either very complicated, have limitations in terms of patterns dimensions or need expensive components. To overcome these limitations, we fabricated various 3D micro structures in one step using a pair of diffusers that diffract the incident beam of UV light at wide angles. In the experiment, we used positive photoresist to coat the Si substrate. A pair of diffusers(ground glass diffuser, opal glass diffuser) with Gaussian and Lambertian scattering was placed above the photomask in the passage of UV light in the photolithography equipment. The incident rays of UV light diffracted twice at wider angles while passing through the diffusers. After exposure, the photoresist was developed fabricating the desired 3D micro structure. These micro structures were analyzed using FE-SEM and 3D-profiler data. As a result, this dual diffuser lithography(DDL) technique enabled us to fabricate various microstructures with different dimensions by just changing the combination of diffusers, making this technology an efficient alternative to other complex techniques.

Self Assembled Patterns of Ag Using Hydrophobic and Hydrophilic Surface Characteristics of Glass (유리기판의 친수.소수 상태 변화를 이용한 자기정렬 Ag Pattern 형성 연구)

  • Choo Byoung-Kwon;Choi Jung-Su;Kim Gun-Jeong;Lee Sun-Hee;Park Kyu-Cang;Jang Jin
    • Journal of the Korean Vacuum Society
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    • v.15 no.4
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    • pp.354-359
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    • 2006
  • Recently, the interest in lithography without photo exposure has been increased compare to the conventional photolithography in nano meter and micrometer size patterning area. We studied a self aligned dipping of Ag solution through micro contact printing (${\mu}-CP$) with octadecyltrichlorosilane (OTS) treated polydimethylsiloxane (PDMS) soft mold. The OTS monolayer on the patterned PDMS was formed by dipping it into OTS solution. We transferred the OTS monolayer from PDMS mold to the glass. The OTS monolayer changed the surface energy from hydrophilic surface to hydrophobic surface, And then we made self aligned Ag solution patterns just after dipping the substrate, using adhesion difference of Ag solution between OTS treated hydrophobic area and non-OTS treated hydrophilic area. We finally get the Ag patterns through only dip-coating after the ${\mu}-CP$ process. And we observed surface energies on the glass substrate through the contact angle measurements as time goes on.

Design and Fabrication of Mold Insert for Injection Molding of Microfluidic tab-on-a-chip for Detection of Agglutination (응집반응 검출을 위한 미세 유체 Lab on a chip의 사출성형 금형 인서트의 디자인 및 제작)

  • Choi, Sung-Hwan;Kim, Dong-Sung;Kwon, Tai-Hun
    • Transactions of Materials Processing
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    • v.15 no.9 s.90
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    • pp.667-672
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    • 2006
  • Agglutination is one of the most commonly employed reactions in clinical diagnosis. In this paper, we have designed and fabricated nickel mold insert for injection molding of a microfluidic lab-on-a-chip for the purpose of the efficient detection of agglutination. In the presented microfluidic lab-on-a-chip, two inlets for sample blood and reagent, flow guiding microchannels, improved serpentine laminating micromixer(ISLM) and reaction microwells are fully integrated. The ISLM, recently developed by our group, can highly improve mixing of the sample blood and reagent in the microchannel, thereby enhancing reaction of agglutinogens and agglutinins. The reaction microwell was designed to contain large volume of about $25{\mu}l$ of the mixture of sample blood and reagent. The result of agglutination in the reaction microwell could be determined by means of the level of the light transmission. To achieve the cost-effectiveness, the microfluidic lab-on-a-chip was realized by the injection molding of COC(cyclic olefin copolymer) and thermal bonding of two injection molded COC substrates. To define microfeatures in the microfluidic lab-on-a-chip precisely, the nickel mold inserts of lab-on-a-chip for the injection molding were fabricated by combining the UV photolithography with a negative photoresist SU-8 and the nickel electroplating process. The microfluidic lab-on-a-chip developed in this study could be applied to various clinical diagnosis based on agglutination.

An Integrated Mach-Zehnder Interferometric Sensor based on Rib Waveguides (Rib 도파로 기반 집적 마흐젠더 간섭계 센서)

  • Choo, Sung-Joong;Park, Jung-Ho;Shin, Hyun-Joon
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.47 no.4
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    • pp.20-25
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    • 2010
  • An integrated Mach-Zehnder interferometric sensor operating at 632.8 nm was designed and fabricated by the technology of planar rib waveguides. Rib waveguide based on silica system ($SiO_2-SiO_xN_y-SiO_2$) was geometrically designed to have single mode operation and high sensitivity. It was structured by semiconductor fabrication processes such as thin film deposition, photolithography, and RIE (Reactive Ion Etching). With the power observation, propagation loss measurement by cut-back method showed about 4.82 dB/cm for rib waveguides. Additionally the chromium mask process for an etch stop was employed to solve the core damaging problem in patterning the sensing zone on the chip. Refractive index measurement of water/ethanol mixture with this device finally showed a sensitivity of about $\pi$/($4.04{\times}10^{-3}$).

Imaging of self-assembled monolayers by surface plasmon microscope (표면 플라즈몬 현미경을 이용한 자기조립 단분자막의 이미징)

  • 표현봉;신용범;윤현철;양해식;김윤태
    • Korean Journal of Optics and Photonics
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    • v.14 no.1
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    • pp.97-102
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    • 2003
  • Multi-channel images of 11-MUA(11-Mercaptoundecanoic acid) and 11-MUOH(11-Mercaptoundecanol) self-assembled monolayers were obtained by using two-dimensional surface plasmon resonance (SPR) absorption. The patterning process was simplified by exploiting direct photo-oxidation of thiol bonding (photolysis) instead of conventional photolithography. Sharper images were resolved by using a white light source in combination with a narrow bandpass filter in the visible region, minimizing the diffraction patterns on the images. The line profile calibration of the image contrast caused by different resonance conditions at each point on the sensor surface (at a fixed incident angle) enables us to discriminate the monolayer thickness in nanometer scale. Furthermore, there is no signal degradation such as photo bleaching or quenching, which are common in the detection methods based on fluorescence.

Magnetic properties of micro-patterned array of anti-dots in Co/Ni bilayer

  • Deshpande, N.G.;Seo, M.S.;Zheng, H.Y.;Lee, S.J.;Rhee, J.Y.;Kim, K.W.;Lee, Y.P.
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.08a
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    • pp.276-276
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    • 2010
  • Large-area micropatterned array of Co/Ni bilayer anti-dots was fabricated using photolithography and wet etching process. The surface morphology as well as the surface topography was checked by scanning electron microscopy and atomic force microscopy, whereas the magnetic properties were studied by magneto-optical Kerr effect (MOKE) and magnetic force microscopy (MFM). Systematic studies of the magnetic-reversal mechanism, the in-plane anisotropy and the switching field properties were carried out. To get a comprehensive knowledge about the domain configuration, we also employed OOMMF simulations. It was found from the MOKE measurements that a combined effect of configurational and the magneto-crystalline anisotropy simultaneously works in such micropatterned bilayer structures. In addition, the inclusion of holes in the uniform magnetic film drastically affected the switching field. The MFM images show well-defined domain structures which are periodic in nature. The micromagnetic simulations indicate that the magnetization reversal of such a structure proceeds by formation and annihilation of domain walls, which were equally manifested by the field-dependent MFM images. The observed changes in the magnetic properties are strongly related to both the patterning that hinders the domain-wall motion and to the magneto-anisotropic bilayered structure.

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Improvement of Device Characteristic on Solution-Processed Al-Zn-Sn-O Junctionless Thin-Film-Transistor Using Microwave Annealing

  • Mun, Seong-Wan;Im, Cheol-Min;Jo, Won-Ju
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.347.2-347.2
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    • 2014
  • 최근, 비정질 산화물 반도체 thin film transistor (TFT)는 수소화된 비정질 실리콘 TFT와 비교하여 높은 이동도와 큰 on/off 전류비, 낮은 구동 전압을 가짐으로써 빠른 속도가 요구되는 차세대 투명 디스플레이의 TFT로 많은 연구가 진행되고 있다. 한편, 기존의 Thin-Film-Transistor 제작 시 우수한 박막을 얻기 위해서는 $500^{\circ}C$ 이상의 높은 열처리 온도가 필수적이며 이는 유리 기판과 플라스틱 기판에 적용하는 것이 적합하지 않고 높은 온도에서 수 시간 동안 열처리를 수행해야 하므로 공정 시간 및 비용이 증가하게 된다는 단점이 있다. 이러한 점을 극복하기 위해 본 연구에서는 간단하고, 낮은 제조비용과 대면적의 박막 증착이 가능한 용액공정을 통하여 박막 트랜지스터를 제작하였으며 thermal 열처리와 microwave 열처리 방식에 따른 전기적 특성을 비교 및 분석하고 각 열처리 방식의 열처리 온도 및 조건을 최적화하였다. P-type bulk silicon 위에 산화막이 100 nm 형성된 기판에 spin coater을 이용하여 Al-Zn-Sn-O 박막을 형성하였다. 그리고, baking 과정으로 $180^{\circ}C$의 온도에서 10분 동안의 열처리를 실시하였다. 연속해서 Photolithography 공정과 BOE (30:1) 습식 식각 과정을 이용해 활성화 영역을 형성하여 소자를 제작하였다. 제작 된 소자는 Junctionless TFT 구조이며, 프로브 탐침을 증착 된 채널층 표면에 직접 접촉시켜 소스와 드레인 역할을 대체하여 동작시킬 수 있어 전기적 특성을 간단하고 간략화 된 공정과정으로 분석할 수 있는 장점이 있다. 열처리 조건으로는 thermal 열처리의 경우, furnace를 이용하여 $500^{\circ}C$에서 30분 동안 N2 가스 분위기에서 열처리를 실시하였고, microwave 열처리는 microwave 장비를 이용하여 각각 400 W, 600 W, 800 W, 1000 W로 15분 동안 실시하였다. 그 결과, furnace를 이용하여 열처리한 소자와 비교하여 microwave를 통해 열처리한 소자에서 subthreshold swing (SS), threshold voltage (Vth), mobility 등이 비슷한 특성을 내는 것을 확인하였다. 따라서, microwave 열처리 공정은 향후 저온 공정을 요구하는 MOSFET 제작 시의 훌륭한 대안으로 사용 될 것으로 기대된다.

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Design and Fabrication of a Polarization-Independent 1 ${\times}$ 8 InGaAsP/InP MMI Optical Splitter (편광에 무관한 1 ${\times}$ 8 InGaAsP/InP 다중모드간섭 광분배기의 설계 및 제작)

  • Yu, Jae-Su;Moon, Jeong-Yi;Bae, Seong-Ju;Lee, Yong-Tak
    • Proceedings of the Optical Society of Korea Conference
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    • 2000.08a
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    • pp.28-29
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    • 2000
  • Optical power splitters and/or couplers are important components for optical signal distribution between channels both in wavelength division multiplexing(WDM) systems and photonic integrated circuits(PICs). Since polarization is usually not known after propagation in an optical fiber, passive WDM components have to be polarization insensitivity, Compared to alternatives such as directional couplers or Y-junction splitters, splitters based on multimode interference(MMI) have found a growing interest in recent yens because of their desirable characteristics, such as compact size, low excess loss, wide bandwidth, polarization independence, and relaxed fabrication tolerances$^{(1)}$ . These devices have been fabricated in polymers, silica, or III-V semiconductor materials. A1 $\times$ 4 MMI power splitter on InP materials that were suitable for application in the 1.55-${\mu}{\textrm}{m}$ region$^{(2)}$ . However, the fabrication process of the structure is too complicated and the photolithography tolerance is very tight. Also, a 1 $\times$ 16 InGaAsP/InP MMI power splitter with an excess loss of 2.2dB and a splitting ratio of 1.5dB was demonstrated by using deep etching$^{(3)}$ . The deep etching of the sidewalls through the entire guide layer of the slab waveguide resulted in a number of drawbacks$^{(4)}$ . (omitted)

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Shape anisotropy and magnetic properties of Co/Ni anti-dot arrays

  • Deshpande, N.G.;Seo, M.S.;Kim, J.M.;Lee, S.J.;Lee, Y.P.;Rhee, J.Y.;Kim, K.W.
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.02a
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    • pp.444-444
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    • 2011
  • Recently, patterned magnetic films and elements attract a wide interest due to their technological potentials in ultrahigh-density magnetic recording and spintronic devices. Among those patterned magnetic structures, magnetic anti-dot patterning induces a strong shape anisotropy in the film, which can control the magnetic properties such as coercivity, permeability, magnetization reversal process, and magneto-resistance. While majority of the previous works have been concentrated on anti-dot arrays with a single magnetic layer, there has been little work on multilayered anti-dot arrays. In this work, we report on study of the magnetic properties of bilayered anti-dot system consisting of upper perforated Co layer of 40 nm and lower continuous Ni layer of 5 nm thick, fabricated by photolithography and wet-etching processes. The magnetic hysteresis (M-H) loops were measured with a superconducting-quantum-interference-device (SQUID) magnetometer (Quantum Design: MPMS). For comparison, investigations on continuous Co thin film and single-layer Co anti-dot arrays were also performed. The magnetic-domain configuration has been measured by using a magnetic force microscope (PSIA: XE-100) equipped with magnetic tips (Nanosensors). An external electromagnet was employed while obtaining the MFM images. The MFM images revealed well-defined periodic domain networks which arise owing to the anisotropies such as magnetic uniaxial anisotropy, configurational anisotropy, etc. The inclusion of holes in a uniform magnetic film and the insertion of a uniform thin Ni layer, drastically affected the coercivity as compared with single Co anti-dot array, without severely affecting the saturation magnetization ($M_s$). The observed changes in the magnetic properties are closely related to the patterning that hinders the domain-wall motion as well as to the magneto-anisotropic bilayer structure.

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