• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.08a
• /
• pp.223-223
• /
• 2012

Surface engineering plays a significant role in fabricating highly functionalized materials applicable to industrial and biomedical fields. Surface wrinkles and folds formed by ion beam or plasma treatment are buckling-induced patterns and controlled formation of those patterns has recently gained considerable attention as a way of creating well-defined surface topographies for a wide range of applications. Surface wrinkles and folds can be observed when a stiff thin layer attached to a compliant substrate undergoes compression and plasma treatment is one of the techniques that can form stiff thin layers on compliant polymeric substrates, such as poly (dimethylsiloxane) (PDMS). Here, we report two effective methods using plasma modification techniques for controlling the formation of surface wrinkles and folds on flat or patterned PDMS substrates. First, we show a method of creating wrinkled diamond-like carbon (DLC) film on grooved PDMS substrates. Grooved PDMS substrates fabricated by a molding method using a grooved master prepared by photolithography and a dry etching process were treated with argon plasma and subsequently coated with DLC film, which resulted in the formation of wrinkled DLC film aligning perpendicular to the steps of the pre-patterned ridges. The wavelength and the amplitude of the wrinkled DLC film exhibited variation in the submicron- to micron-scale range according to the duration of argon plasma pre-treatment. Second, we present a method for controlled formation of folds on flat PDMS substrates treated with oxygen plasma under large compressive strains. Flat PDMS substrates were strained uniaxially and then treated with oxygen plasma, resulting in the formation of surface wrinkles at smaller strain levels, which evolved into surface folds at larger strain levels. Our results demonstrate that we can control the formation and evolution of surface folds simply by controlling the pre-strain applied to the substrates and/or the duration of oxygen plasma treatment.

• Journal of the Korean institute of surface engineering
• /
• v.46 no.3
• /
• pp.99-104
• /
• 2013

The simple and cost-effective microfabrication method of photosensitive glass (PSG) using metal patterning and blank exposure was proposed. Conventional photolithography for micromachining of PSG needs a costly quartz mask which has high transmittance as an optical property. However, in this study the process was improved through the combination of micro-patterned Ti thin film and blank UV exposure without quartz mask. The effect of UV exposure time as well as the DHF etching condition was investigated. UV exposure test was performed within the range from 3 min to 9 min. The color and etch result of PSG exposed for 5 min were the most clear and effective to etch more precisely, respectively. The etching results of PSG in diluted hydrofluoric acid (DHF) with a concentration of 5, 10, 15 vol% were compared. The effect on the side etch was insignificant while the etch rate was proportional as the concentration increased. 10 vol% DHF results not only high etch rate of 75 ${\mu}m/min$ also lower side etch value after PSG etching. This method facilitates the microfabrication of PSG with various patterns and high aspect ratio for applying to advanced applications.

• Journal of the Korea Society for Simulation
• /
• v.26 no.4
• /
• pp.43-49
• /
• 2017

With the advances in and expansion of the semiconductor and display businesses in Korea the demand of the engineers in such fields is increasing. Keeping pace with the trend, the semiconductor courses in undergraduate not only include the newest technologies in addition to the fundamental theories but fabrication related technologies as well in order to produce engineers with practical knowledge. However, since semiconductor fabrication requires expensive equipment and materials in a clean room, laboratory class can't be provided in undergraduate. To overcome this limitation actual fabrication processes are recorded in video and played in class. In addition, 3D visualization of fabrication processes can be used.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2009.06a
• /
• pp.440-440
• /
• 2009

Semiconductor nanowires offer exciting possibilities as components of solar cells and have already found applications as active elements in organic, dye-sensitized, quantum-dot sensitized, liquid-junction, and inorganic solid-state devices. Among many semiconductors, silicon is by far the dominant material used for worldwide photovoltaic energy conversion and solar cell manufacture. For silicon wire to be used for solar device, well aligned wire arrays need to be fabricated vertically or horizontally. Macroscopic silicon wire arrays suitable for photovoltaic applications have been commonly grown by the vapor-liquid-solid (VLS) process using metal catalysts such as Au, Ni, Pt, Cu. In the case, the impurity issues inside wire originated from metal catalyst are inevitable, leading to lowering the efficiency of solar cell. To escape from the problem, the wires of purity of wafer are the best for high efficiency of photovoltaic device. The fabrication of wire arrays by the electrochemical etching of silicon wafer with photolithography can solve the contamination of metal catalyst. In this presentation, we introduce silicon wire arrays by electrochemical etching method and then fabrication methods of radial p-n junction wire array solar cell and the various merits compared with conventional silicon solar cells.

• 한국생물공학회:학술대회논문집
• /
• 2003.04a
• /
• pp.74-78
• /
• 2003

Multi-channel images of 11-MUA and 11-MUOH self-assembled monolayers were obtained by using two-dimensional surface plasmon resonance (SPR) absorption. Patterning process was simplified by exploiting direct photo-oxidation of thiol bonding (photolysis) instead of conventional photolithography. Sharper images were resolved by using a white light source in combination with a narrow bandpass filter in the visible region, minimizing the diffraction patterns on the images. The line profile calibration of the image contrast caused by different resonance conditions at each points on the sensor surface (at a fixed incident angle) enables us to discriminate the monolayer thickness in sub-nanometer scale. Furthermore, there is no signal degradation such as photo bleaching or quenching which are common in the detection methods based on the fluorescence.

• Journal of Korean Vacuum Science & Technology
• /
• v.5 no.1
• /
• pp.11-18
• /
• 2001

Dielectric passivation effects on the EM(electromigration) have been a great interest with recent ULSI and multilevel structure tends in thin film interconnections of a microelectronic device. SiO$_2$, PSG(phosphosilicate glass), and Si$_3$N$_4$ passivation materials effects on the EM resistance were investigated by utilizing widely used Al-1%Si thin film interconnections. A standard photolithography process was applied for the fabrication of 0.7㎛ thick 3㎛ wide, and 200㎛ ~1600㎛ long Al-1%Si EM test patterns. SiO$_2$, PSG, and Si$_3$N$_4$ dielectric passivation with the thickness of 300 nm were singly deposited onto the Al-1%Si thin film interconnections by using an APCVD(atmospheric pressure chemical vapor deposition) and a PECVD(plasma enhanced chemical vapor deposition) in order to investigate the passivation materials effects on the EM characteristics. EM tests were performed at the direct current densities of 3.2 $\times$ 10$\^$6/∼4.5 $\times$ 10$\^$6/ A/cm$^2$ and at the temperatures of 180 $\^{C}$, 210$\^{C}$, 240$\^{C}$, and 270$\^{C}$ for measuring the activation energies(Q) and for accelerated test conditions. Activation energies were calculated from the measured MTF(mean-time-to-failure) values. The calculated activation energies for the electromigration were 0.44 eV, 0.45 eV, and 0.50 eV, and 0.66 eV for the case of nonpassivated-, Si$_3$N$_4$passivated-, PSG passivated-, and SiO$_2$ passivated Al-1%Si thin film interconnections, respectively. Thus SiO$_2$ passivation showed the best characteristics on the EM resistance followed by the order of PSG, Si$_3$N$_4$ and nonpassivation. It is believed that the passivation sequences as well as the passivation materials also influence on the EM characteristics in multilevel passivation structures.

• Journal of the Korean Vacuum Society
• /
• v.10 no.1
• /
• pp.27-30
• /
• 2001

Electromigration Phenomena in Al-1%Si thin film interconnections under DC and PDC conditions were investigated. Thin film interconnections with $SiO_2$ and PSG/$SiO_2$ dielectric passivation layer were formed by a standard photolithography process method and test line lengths were 100, 400, 800, 1200, and 1600 $\mu\textrm{m}$. The current density of $1.19\times10^7\textrm{A/cm}^2$ was stressed in Al-1%Si thin film interconnections under DC condition. The current density of $1.19\times10^7\textrm{A/cm}^2$ was also applied under PDC condition at the frequency of 1 Hz with the duty factor of 0.5. The electromigration resistance of PSG/SiO2 dielectric passivation test line was stronger than $SiO_2$ dielectric passivation test line. The lifetime under PDC was 2-4 times longer than DC condition. As the thin film interconnection line increased, the lifetime decreased and saturated over the critical length. Failure patterns by an electromigration were dominated by void-induced electrical open and hillock-induced electrical short.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.27 no.9
• /
• pp.566-570
• /
• 2014

Electrode pattern effects on the capacitive humidity sensor were investigated. The fabrication of the capacitive humidity sensor was formed with three steps. The bottom electrode was formed on the silicon substrate with Pt/Ti thin layer by using shadow mask and e-beam evaporator. The photo sensitive polyimide was formed on the bottom electrode by using photolithography process as a humidity sensitive thin film. The upper electrode was formed on the polyimide thin film with Pt/Ti thin layer by using e-beam evaporator and lift-off method. Three electrode patterns, such as circle, square, and triangle pattern, were used and changed the sizes to investigate the effects. The capacitances of the sensors were decreased 622 to 584 pF with the area decreament of patterns 250,000 to $196,250{\mu}m^2$. From these results, a capacitive humidity sensor with photo sensitive polyimide is expected to be applied to a high sensitive humidity sensor.

• Transactions of the Korean Society of Mechanical Engineers A
• /
• v.34 no.12
• /
• pp.1857-1863
• /
• 2010

We present the fabrication and characterization of transparent carbon nanotube film (CNF) piezoresistors. CNFs were fabricated by vacuum filtration methods with 65?92% transmittance and patterned on Au-deposited silicon wafer by photolithography and dry etching. The patterned CNFs were transferred onto poly-dimethysiloxane (PDMS) using the weak adhesion property between the silicon wafer and the Au layer. The transferred CNFs were confirmed to be piezoresistors using the equation of concentrated-force-derived resistance change. The gauge factor of the CNFs was measured to range from 10 to 20 as the resistance of the CNFs increased with applied pressure. In polymer microelectromechanical systems, CNF piezoresistors are the promising materials because of their high sensitivity and low-temperature process.

• Journal of the Korean Society for Nondestructive Testing
• /
• v.28 no.5
• /
• pp.395-400
• /
• 2008

Alternating magnetic field was used for detection of surface flaws on nonmagnetic and magnetic metallic specimens. The nondestructive sensor probe was composed of the planar coil with inductive magnetic thin film yoke as a sensing component and a single straight typed exciting coil. The planar inductive coil sensor with magnetic yoke was fabricated by sputtering, electroplating, dry etching and photolithography process. The alternative currents with the range of 0.1A to 1.0A (0.7 MHz to 1.8 MHz) were applied to the exciting coil. The specimens were prepared with the slit shaped artificial surface flaws (minimum depth and width; 0.5 mm) on metallic plate (Al; nonmagnetic metal and FeC; magnetic metal). The detected signal for the positions and shapes of surface flaws on specimens were obtained with high sensitivity and high signal to ratio. The measured output signals by the non-contacted scanning on surface of FeC specimen with micron-sized crack were converted to the images of the flaws. And these results were compared with the optical images, respectively.