• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.12
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• pp.2823-2830
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• 2014

The antenna miniaturization technique involves the increment of the electrical length of the resonator the variation of the physical appearance of the antenna. The most typical method of size reduction is designing helical antenna, meander antenna, and fractal antenna. Size reduction using fractal antenna is proposed in this paper. Fractal koch curve has been etched in microstrip patch antenna to downsize the antenna at ISM (Industrial Scientific and Medical) frequency band of 2.45 GHz koch curve microstrip patch antenna ha FR4 epoxy substrate with dielectric constant 4.7, loss tangent equal to 0.02 and dielectric high of 1.6 mm. The designed antenna is fabricated using etching process. The fabricated antenna has return loss of 2.45 GHz, VSWR of 1.1492, and impedance is matched to $46{\Omega}$.

• Journal of the Korean Vacuum Society
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• v.21 no.4
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• pp.193-198
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• 2012

In this study, we have fabricated the polymer insulator and diamond-like carbon (DLC) thin films by using plasma enhanced chemical vapor deposition methods. we fabricated the DLC films with various thicknesses as the passivation layer on plasma polymer and investigated the structural, physical, and electrical properties of DLC/plasma polymer films. The plasma polymer synthesized in this work had the low leakage current and low dielectric constant. The values of hardness and elastic modulus in DLC/plasma polymer films are increased, and the value of rms surface roughness is decreased, and contact angle value is increased with increasing DLC film thickness. In the electrical properties of DLC/plasma polymer, the value of the dielectric constant is increased, however the leakage current property of the DLC/plasma polymer is improved than that of plasma polymer film with increasing DLC film thickness.

• Korean Journal of Materials Research
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• v.12 no.12
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• pp.962-966
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• 2002

The $SrBi_2$$Nb_2$$O_{9}$ (SBN) thin films were deposited with $SrNb_2$$O_{6}$ / (SNO) and $Bi_2$$O_3$ targets by co-sputtering method. For the growth of SBN thin films, we adopted the various power ratios of two targets; the power ratios of the SNO target to $Bi_2$$O_3$ target were 100 W : 20 W, 100 W : 25 W, and 100 W : 30 W during sputtering the SBN films. We found that the electrical properties of SBN films were greatly dependent on Bi content in films. The $Bi_2$Pt and $Bi_2$$O_3$ phase as second phases occurred at the films with excess Bi content greater than 2.4, resulting in poor ferroelectric properties. The best growth condition of the SBN films was obtained at the power ratio of 100 W : 25 W for the two targets. At this condition, the crystallinity and electrical properties of the films were improved at even low annealing temperature as $700^{\circ}C$ for 1h in oxygen ambient and the Sr, Bi and Nb component in the SBN films were about 0.9, 2.4, and 1.8 respectively. From the P-E and I-V curves for the specimen, the remnant polarization value ($2P_{r}$) of the SBN films was obtained about 6 $\mu$C/c $m^2$ at 250 kV/cm and the leakage current density of this thin film was $2.45$\times$10^{-7}$ $A/cm^2$ at an applied voltage of 3 V.V.