• 전기의세계
• /
• v.13 no.4
• /
• pp.10-15
• /
• 1964

It is well known that the starting characteristics of the cold cathode type discharge tube have photoelectric effects by the incident light from outside. After making the cold cathode type discharge tubes to be avaiable for popularizing, the present paper was devoted primaliry to a study of relations between the starting characterstics and photoelectric effects of discharge tube under the oight circumstances of day light, incandescent lamp, flouresent lamp, and mercury lamp we used frequently. The result of this investigation show that the photoelectric effects by flourescent lamp emitting short wave length having close ralation to the photoelectric effects is greater than incandescent lamp or day light, and also mercury lamp emitting shorter wave length than flourescent lamp indicates the greatest photoelectric effects.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.27 no.6
• /
• pp.282-288
• /
• 2017

In this paper, GaAs/AlGaAs multi-layer structure was grown by liquid phase epitaxy with graphite sliding boat, which can be used as a device structure of a photocathode image sensor. The multi-layer structure was grown on an n-type GaAs substrate in the sequence as follows: GaAs buffer layer, Zn-doped p-type AlGaAs layer as etching stop layer, Zn-doped p-type GaAs layer, and Zn-doped p-type AlGaAs layer. The Characteristics of GaAs/AlGaAs structures were analyzed by using scanning electron microscope (SEM), secondary ion mass spectrometer (SIMS) and hall measurement. The SEM images shows that the p-AlGaAs/p-GaAs/p-AlGaAs multi-layer structure was grown with a mirror-like surface on a whole ($1.25mm{\times}25mm$) substrate. The Al composition in the AlGaAs layer was approximately 80 %. Also, it was confirmed that the free carrier concentration in the p-GaAs layer can be adjusted to the range of $8{\times}10^{18}/cm^2$ by hall measurement. In the result, it is expected that the p-AlGaAs/p-GaAs/p-AlGaAs multi-layer structure grown by the LPE can be used as a device structure of a photoelectric cathode image sensor.