• Proceedings of the KIEE Conference
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• 1995.07c
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• pp.1265-1267
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• 1995

In the fiber-photodiode(PD) coupling module using v-groove, the paraxial approximation is no longer valid because the beam enters obliquely the PD substrate with the angle of $20^{\circ}$ after being reflected from the $55^{\circ}$ mirror formed by anisotropically etching of the (100) silicon wafer. In this paper, we study the beam profile incident on the PD active area and fiber-PD coupling efficiency for this case.

• ETRI Journal
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• v.26 no.1
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• pp.61-64
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• 2004

We have explored the fabrication of an InP/InGaAs single heterojunction bipolar transistor (HBT) and a wave guide p-i-n photodiode (PD) on two kinds of double stacked layers for the implementation of an optoelectronic millimeter-wave monolithic integrated circuit (OEMMIC). We applied a photosensitive polyimide for passivation and integration to overcome the large difference between the HBT and PD layers of around $3{\mu}m$. Our experiment showed that the RF characteristics of the HBT were dependent on the location of the PD layer, while the dc performances of the HBTs and PDs were independent of the type of stacked layer used. The $F_t$ and $F_{max}$ of the HBTs on the HBT/PD stacked layer were 10% lower than those of the HBTs on the PD/HBT stacked layer.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.6
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• pp.88-97
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• 1994

We describe the design, fabrication, and performance of the optical fiber-photodiode 1$\times$12 arry module using mesa-type InS10.53T GaS10.47TAS/INP 1$\times$12 PIN photodiode array. We fabricated the PIN PD array for high-speed optical fiber parallel data link optimizing quantum efficiency, operating speed sensitivity from the PIN-FET structure, and electrical AC crosstalk. For each element of the array, the diameter of the photodetective area is 80 $\mu$m, the diameter of the p-metal pad is 90 $\mu$m, and the photodiode seperation is 250 $\mu$m to use Si v-groove. Ground conductor line is placed around diodes and p-metal pads are formed in zigzag to reduce Ac capacitance coupling between array elements. The dark current (IS1dT) is I nA and the capacitance(CS1pDT) is 0.9 pF at -5 V. No signifcant variations of IS1dT and CPD from element to element in the array were observed. We calulated the coupling efficiency for 10/125 SMF and 50/125 GI MMF, and measured the responsivity of the PD array at the wavelength is 1.55 $\mu$ m. Responsivities are 0.93 A/W for SMF and 0.96 A/W for MMF. The optical fiber-PD array module is useful in numerous high speed digital and analog photonic system applications.

• Journal of the Optical Society of Korea
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• v.18 no.5
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• pp.594-597
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• 2014

We propose a novel approach to measure the residual phase noise (RPN) of a photodiode (PD) based on a two-tone correlation method. Compared with the previous measurements of the RPNs of PDs, this method is more convenient in practical application. In this method, two microwave sources and other components were placed in two isolated links sharing the same PD, so the noises of them were uncorrelated. With an FFT analyzer, the uncorrelated noises could be mostly suppressed while only the RPN of the PD was preserved. Voltage-dependent nonlinearities of PDs were studied previously. In this letter, we investigate the relationship between the RPN of the PD and the bias voltage on the PD. By changing the bias voltage, the difference of the RPN can be up to 10 dB.

• ETRI Journal
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• v.38 no.4
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• pp.665-674
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• 2016

We designed and fabricated a semiconductor optical amplifier-integrated dual-mode laser (SOA-DML) as a compact and widely tunable continuous-wave terahertz (CW THz) beat source, and a pin-photodiode (pin-PD) integrated with a log-periodic planar antenna as a CW THz emitter. The SOA-DML chip consists of two distributed feedback lasers, a phase section for a tunable beat source, an amplifier, and a tapered spot-size converter for high output power and fiber-coupling efficiency. The SOA-DML module exhibits an output power of more than 15 dBm and clear four-wave mixing throughout the entire tuning range. Using integrated micro-heaters, we were able to tune the optical beat frequency from 380 GHz to 1,120 GHz. In addition, the effect of benzocyclobutene polymer in the antenna design of a pin-PD was considered. Furthermore, a dual active photodiode (PD) for high output power was designed, resulting in a 1.7-fold increase in efficiency compared with a single active PD at 220 GHz. Finally, herein we successfully show the feasibility of the CW THz system by demonstrating THz frequency-domain spectroscopy of an ${\alpha}$-lactose pellet using the modularized SOA-DML and a PD emitter.

• Journal of Satellite, Information and Communications
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• v.8 no.2
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• pp.44-49
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• 2013

LED communication is a wireless communication technology to transmit information using visible light coming out from the LED(Light Emitting Diode). It is a technique that can overcome RF(Radio Frequency) communication problems that are frequency allocations, human body hazards, security vulnerabilities, and interference between electronic devices. As a technique that can be used as lighting and communications with using LED, LED communication is suitable for ubiquitous environment. This paper introduces the process of data transmission algorithm for LED communication systems algorithm using LED, PD(Photodiode), and MCU(Micro Controller Unit).

• Proceedings of the IEEK Conference
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• 2004.08c
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• pp.482-485
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• 2004

We fabricated a hybrid bulk/fully depleted silicon on insulator (FDSOI) complementary metal oxide semiconductor (CMOS) active pixel image sensor. The active pixel is comprised of reset and source follower transistors on the SOI seed wafer, while the pinned photodiode and readout gate and floating diffusion are fabricated on the SOI handle wafer after the removal of the buried oxide. The source of dark current is eliminated by hybrid bulk/FDSOI pixel structure between localized oxidation of silicon (LOCOS) and photodiode(PD). By using the low noise hybrid pixel structure, dark currents qm be suppressed significantly. The pinned photodiode can also be optimized for quantum efficiency and reduce the noise of dark current. The spectral response of the pinned photodiode on the SOI handle wafer is very flat between 400 nm and 700 nm and the dark current that is higher than desired is about 10 nA/cm2 at a $V_{DD}$ of 2 V.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.34D no.5
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• pp.61-66
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• 1997

In this paper we report the fabrication of an InGaAs metal-semiconductor-metal (MSM) photodiode(PD) which an InAlAs barrier enhancement layer that has very low dark current and high speed chracteristics. The detector using Cr/Au schottky metal fingers with 4um spacing on a large active area of 300*300um$^{2}$ offers a low dark current of 38nA at 10V, a low capacitance of 0.8pF, and a high 3-dB bandwidth of 2.4 GHz. To our knowledge, these characteristics are better than any previously published results obtained from large area InGaAs MSM PD's. The RC equivalent model and frequency domain current response model considering transit time were also used to analyze the frequency characteristic of the fabricated device.

• Journal of the Korean Institute of Telematics and Electronics
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• v.27 no.5
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• pp.737-746
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• 1990

Ga0.47In0.53As PIN photodiodes(PD) having various areas have been fabricated by liquid phase epitaxial techniques. Ternary melt has been baked out at 675\ulcorner in H2 atmosphere for 20 hours before growth, which resulted in reduction of background carrier concentration of grown epi-layer. Also, lattice mismatch has been controlled within 0.01%. The room temperature performance of 10**-4cm\ulcornerarea PIN PD at a bias voltage of -5V were` quantum efficiency(with no antireflection coating)=60% for 1.3\ulcorner light source, dark current\ulcorner5nA, and capacitance\ulcornerpE. Frequency response measurement of packaged PIN PD has shown that cut-off frequency (f-3dB) was 961MHz. This PD has shown a good eye pattern when it was incorporated in a 565Mbps optical receiver.

• Korean Journal of Optics and Photonics
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• v.19 no.5
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• pp.343-348
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• 2008

This study was carried out to commercialize FTTH by developing a burst mode optical receiver for E-PON. The optical receiver was manufactured by minimizing the capacitance of a photodiode to improve sensitivity for meeting 10, 20 km OLT Rx standard of E-PON at the transmission speed of 1.25 Gb/s. When bit-error ratio is $10^{-12}$ and PRBS is $2^5-1$, sensitivity is -26 dBm, loud/soft ratio is 23 dB. Both preamble time and guard time were set to 102.4 ns (128 bit). After comparing a photodiode whose capacitance is 0.53 pF with another photodiode whose capacitance has been minimized to 0.26 pF, we could see that sensitivity improved to 0.7 dBm and so did bandwidth to 190 MHz of burst mode for the optical receiver manufactured by the photodiode whose capacitance is 0.26 pF.