• Journal of the Korea Academia-Industrial cooperation Society
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• v.3 no.3
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• pp.161-165
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• 2002

Ge-doped rnulticomponent oxide glasses were prepared by a conventional melting method. The change of micro structure in glasses was investigated by using PL (photoluminescence) and ESR (electron spin resonance). Before UV irradiation, the PL intensity increased according to germanium contents, but decreased the intensity as soon as UV irradiation. A changed property was recovered near it original properties when it was annealed. These photodarkening and thermal bleaching effect were observed by ESR intrument. These effect did not change the glass phase but vary only change of micro structure.

• Journal of the Korean Ceramic Society
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• v.37 no.3
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• pp.219-226
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• 2000

Amorphous Ge20As20Se60 chalcogenide thin films were prepared by spin coating technique from mixed solutions of As40Se60 and Ge40Se60 dissolved in ethylenediamine. Films were prepared at a roating speed of 3500 rpm and spinning time was 10 second and heat-treateed at 27$0^{\circ}C$ for 1 hour. The resulting film thickness and RMS roughness were approximately 340 nm and 15$\AA$. Photostructure changes were investigated with 514.5nm Ar+ laser irradiation and heat-treatment. After Ar+ laser irradiation, transmittance and transmission efficiency decreased respectively up to 24.9% at 2.43 eV and 67.5% at 3.27 eV, and absorption edge shifted toward long wavelength. Optical bandgap changed from 2.03 to 1.83 eV, and absoprtion coefficient and absorption efficiency increased up to 0.33$\times$105cm-1 at 3.37eV and 88.3% at 1.31 eV, respectively. These photodarkening state were recovered reversibly by heat-treatment at 27$0^{\circ}C$ for 1 hour. Photodarkening and thermal bleaching effects by laser irradiation and heat-treatment revealed reversible amorphous-to-amorphous transition varying only coordination number.

• Proceedings of the Optical Society of Korea Conference
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• 1990.02a
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• pp.162-166
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• 1990

Photoinduced anisotropy (PIA) in amorphous As2S3 (a-As2S3 ) thin film, deposited by vacuum evaporation, is investigated. PIA is induced by linearly polarized Ar+ laser beam (λ=514.5nm) and probed by weak Ar+ laser (λ=514.5nm) and He-Ne laser (λ=632.8nm) beam through the crossed analyzer. Keeping pump beam intensity constantly, rotation of pump beam polarization direction induces reorientation phenomina of anisotropic axis. Introducing directional factor into simplified 3-level system, which is used to analyze photodarkening phenomina, an analytical expression of PIA is derived. Temporal behavior of PIAand its reorientation phenomina are investigated andcompared with theory. In the experiment pump beam intensity is 100mW/$\textrm{cm}^2$ and thickness of a-As2S3 thin film is 3${\mu}{\textrm}{m}$. In those condition, time constant of photoinduced anisotropy obtained by method of least square curve fitting is 4.0$\times$10-2sec-1. The time constant of PIA we obtained is larger than that of photodarkening, 2.8$\times$10-2sec-1.

• Korean Journal of Optics and Photonics
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• v.6 no.4
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• pp.331-336
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• 1995

The steady-state absorption saturation of the photodarkend SDG was investigated. The absorption saturation intensity was observed to increase for the photodarkened sample. The diffraction efficiency of the permanent grating due to photodarkening was also measured using the backward DFWM technique. For the low backward pump intensity, the diffraction efficiency was proportional to the intensity of the pump beam. The origin of increasing diffraction efficiency is attributed to the difference in absorption between the permanent gratings created by photodarkening. ening.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.04a
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• pp.31-34
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• 1997

A reversible scalar phenomena in amorphous As$_{40}$ Ge$_{10}$ Se$_{15}$ S$_{35}$ have been investigated by blue-pass-filtered Hg lamp and He-Ne laser. Annealing causes the shift of the absorption edge to shelter wavelengths approximately 0.17ev, also illumination moves it to longer wavelengths about 0.05 ~ 0.07eV and it increases the refractive index maximum 0.3. Therefore the thermalbleaching(TB) and photodarkening(PD) effects have been understood by the results related to optical absorption characteristics. TB could be estimated as increasing the stabilization of amorphous chalcogenide films since absorption slope of extended regions(U) was not changed by annealing. On the other hand, PD could be understood as due to the enhancement of disorder since the slope of Urbach’s tail(1/F) around an absorption edge were decreased by illumination.ion.n.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.12
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• pp.71-79
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• 1994

In this paper, $As_{40}Se_{50-x}S_[x}Ge_{10}$(x=0, 25, 35, at.%) bulk and thin films, to develope device of reversible hologram, proved amorphous by X-RD analysis. On the thin films with composition rate, as Se-doped-quantity increased, absorption edge shifted to long wavelength, and we found that reversible photodarkening effect occurred when thin films are exposed and annealed. Optical energy gap was larger when thin films are annealed than exposed. In this effect thin films structurally stabilized by annealing. It is to formed grating hologram by the bragg method on the $As_{40}Se_{15}S_[35}Ge_{10}$ thisn films with the best transmittance properties As polariging angle grew larger, we found that maximum diffraction efficiency became smaller, and obtained it of 4.5% on the thin fim thicknesss of 0.6 m, polarizing angle of 40$^[\circ}$ and exposing for 20sec.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.11a
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• pp.5-9
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• 1996

As optical massmemories, (Se, S)-based chalcogenide amorphous films are used for a holographic supermicrofiche by using the refractive-index change. In 1000$\AA$thick-As$_{40}$ Ge$_{10}$Se$_{100-x}$S$_{x}$(x=0.25, 35at.%), the amount of refractive index change $\Delta$n reaches 0.01~0.53 at 6328, 7800$\AA$ by exposing for 15minutes plue-pass filtered mercury lamp(~4300$\AA$) and annealing 20$0^{\circ}C$. And in initially annealed As$_{40}$ Ge$_{10}$Se$_{15}$ S$_{35}$, photodarkening(PD) and thermalbleaching(TB) was founded.ded.B) was founded.d.

• Electrical & Electronic Materials
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• v.8 no.4
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• pp.472-477
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• 1995

The degree of the photodoping process in Ag(100[.angs.])/a-Se$_{75}$Ge$_{25}$(1500[.angs.]) films has measured as a function of the photon energy between 1.5[eV] and 2.9[eV] with the exposing time. The "window" characteristics of Ag occur at 3400[.angs.] (3.65[eV]) and Ag is almost transparent in this region. It is shown that transmittance is almost constant (40-50%) for the wavelength ranges of our experiment. It is found that the energy gap of a unexposed a-Se$_{75}$Ge$_{25}$ film is 1.81[eV]. Ag photodoping process results in the photodarkening effect which the absorption edge shifts to the long wavelength. Especially, very large band shift (-0.3[eV]) is obtained by exposing He-Ne laser(6328[.angs.]).. We have obtained "the U-type property" for Ar He-Ne and semiconductor laser. It is associated with the variation of energy gap(E$_{g}$) with photo-dose and substantially is explained by DWP model.l.gap(E$_{g}$) with photo-dose and substantially is explained by DWP model.

• Electrical & Electronic Materials
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• v.10 no.5
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• pp.467-472
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• 1997

In this study, we investigated the thickness dependence of thermal bleaching(TB) effect as well as photo-induced scalar phenomena, such as photodrakening(PD) effect and photorefraction(PR) change, in chalcogenide A $s_{40}$ G $e_{10}$S $e_{15}$ $S_{35}$ thin films. We found that when these films were exposed for 15 minutes using blue-pass filtered Hg lamp(~4300$\AA$) after annealing for 30 minutes around the glass transition temperature Tg(20$0^{\circ}C$), the refractive index change ($\Delta$n) was varied up to 0.02~0.46 according to each thickness condition and the optical energy gap ($\Delta$ $E_{op}$ ) was shifted to a longer wavelength of approximately 0.67eV, especially for 1000$\AA$-thickness. Also, the TB PD effects have been understood by the results related to optical absorption characteristics. The TB effect could be estimated as increasing the stabilization of amorphous chalcogenide films since absorption slope of extended regions(U) was not changed by annealing. On the other hand, the PD effect could be understood as due to the enhancement of disorder since U and the slope of Urbachs tail(1/F) around an absorption edge were decreased by exposing.ing.n edge were decreased by exposing.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.5
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• pp.435-440
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• 2002

In this study, we have investigated photo-induced changes of optical energy gap( $E_{OP)}$ and photoluminescence (PL) in amorphous ($\alpha$-) S $e_{100-x}$G $e_{x}$ (x=5, 25 and 33) thin films prepared by conventional thermal evaporation method. In the $\alpha$-S $e_{100-x}$G $e_{x}$ thin film, the $E_{OP}$ is obtained by a linear extrapolation of the ($\alpha$hν)$^{\frac{1}{2}}$ versus hν plot to the energy axis using the optical absorption coefficient ($\alpha$) calculated from the extinction coefficient k measured in the wavelength range of 290~900nm. Although the values of $\Delta$ $E_{OP}$ are very different, all films exhibit photo-induced photo-darkening (PD) effect that is a red shift of $E_{OP}$ . In particular, $\Delta$ $E_{OP}$ in $\alpha$-S $e_{75}$ G $e_{25}$ thin film exhibits the largest value (i, e., $\Delta$ $E^{OP}$ ~40meV for $\alpha$-S $e_{95}$ G $e_{5}$ , $\Delta$ $E_{OP}$ ~200meV for $\alpha$-S $e_{75}$ G $e_{25}$ , $\Delta$ $E_{OP}$ ~130meV for $\alpha$-S $e_{67}$ G $e_{33}$ ). PL spectra in $\alpha$-SeGe by hν$_{HeCd}$ have no-Stokes shift (SS) and show a tendency dependent on both composition and illumination time. We explain the energy-induced phenomena such as the PD and thermal bleaching, the native charged-defect generation and the no-SS PL, etc..the PD and thermal bleaching, the native charged-defect generation and the no-SS PL, etc..tc..