• Journal of Electrochemical Science and Technology
• /
• 제15권2호
• /
• pp.276-290
• /
• 2024

A study of the transition from transitory state to steady state in DSSCs based on natural dyes is presented; cochineal was used as dye and Li⁺, Na⁺, and K⁺ were the ions added to the electrolyte. The photocurrent profiles were obtained as a function of time. Several DSSCs were prepared with different cations and their role and the transitory-to-steady transition was determined. A novel hybrid charge carrier source model based on the Heaviside function H(t) and the Lambert-Beer law, was developed and applied to analysis of the transient response of the output photocurrent. Additionally, the maximum effective light absorption coefficient α and the electronic extraction rate κ for each ion were determined: ${\alpha}_{Li^+,Na^+,K^+}\,=\,(0.486,\,0.00085,\,0.1126)\,cm^{-1}$, and also the electronic extraction rate ${\kappa}^{Li^+,Na^+,K^+}_{ext.}\,=\,(1410,\,19.07,\,19.69)\,cm\,s^{-1}$. The impedance model using Fick's second law was developed for carrier recombination to characterize the photocurrent.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
• /
• pp.408-408
• /
• 2014

Graphene has received attention with its high electron mobility and visual transparency as a promising material for optoelectronic and photonic applications. Combination of graphene and conducting nanostructures i.e. plasmonic structures has recently been researched for enhancing light-matter interaction and overcoming diffraction limit of light. Here we show enhanced photodetection of incoherent visible light with graphene-mediated plasmonics. Gold nanoparticles fabricated by focused ion beam was used as an active element of photodetection and graphene was utilized as an interfacing material between nanostructures and electrodes. Hot electrons generated upon plasmon decay within nanoparticles pass over the potential barrier between nanostructure and graphene and give rise to a photocurrent with built-in electric field. We report 76.7% enhancement of photocurrent under resonant irradiation of fiber-coupled halogen lamp compared to the case without light illumination. We showed wavelength-dependent current response arisen from plasmonic nanostructure, providing a good agreement with theoretical calculation.

• Bulletin of the Korean Chemical Society
• /
• 제33권2호
• /
• pp.469-472
• /
• 2012

Intensity modulated photocurrent spectroscopy and intensity modulated photovoltage spectroscopy were investigated to measure the dynamic response of charge transfer and recombination in the standard, $TiCl_4$-treated and the combined scattering layer electrode dye-sensitized solar cells (DSSCs). IMPS and IMVS provided transit time ($\tau_n$), lifetime ($\tau_r$), diffusion coefficient ($D_n$) and effective diffusion length ($L_n$). These expressions are derived that generation, collection, and recombination of electrons in a thin layer nanocrystalline DSSC under conditions of steady illumination and with a superimposed small amplitude modulation. In this experimental, IMPS/IMVS showed that the main effect of $TiCl_4$ treatment is to suppress the recombination of photogenerated electrons, thereby extending their lifetime. And the Diffusion coefficient of combined scattering layer electrode is $6.10{\times}10^{-6}$ higher than that of the others, resulting in longer diffusion length.

• 전기의세계
• /
• 제17권2호
• /
• pp.16-26
• /
• 1968

Cds is possible to add excess donors and to compensate partially using other group metals as acceptors. The impurities can ble incorporated either during crysta growth or by diffusion into a bulkcrystal. The addition of rimpurities leads also to the production of vacancies in a manner depending on the atmosphere surrounding the crystal during growth, during the diffusion process or using bulk. Cds of the mentioned above affects spectral sensitivity, speed of response, the variation on photocurrent, electron life time, and decay of photoconductivity with temperature and with intensity of illumination. In the work to be deseribed, these properties have been studied between liquid nitrogen and room temperature. In addition, the electron trap distribution has been correlated with speed of response, variation of photocurrent with temperature in various atmosphere. Four major trapping levels have been observed, and their identification with impurity and vacancy levels is discussed. And also the effects of lattice imperfections on the photoconductive properties CdS were investigated in detail.

• 한국전기전자재료학회논문지
• /
• 제35권1호
• /
• pp.80-85
• /
• 2022

ZnO-based transparent conductive films have been widely studied to achieve high performance optoelectronic devices such as next generation flexible and transparent display systems. In order to achieve a transparent flexible ZnO-based device, a low temperature growth technique using a flexible polymer substrate is required. In this work, high quality flexible ZnO films were grown on colorless polyimide substrate using atomic layer deposition (ALD). Transparent ZnO films grown from 80 to 200℃ were fabricated with a metal-semiconductor-metal structure photodetectors (PDs). As the growth temperature of ZnO film increases, the photocurrent of UV PDs increases, while the sensitivity of that decreases. In addition, it is found that the response times of the PDs become shorter as the growth temperature increases. Based on these results, we suggest that high-quality ZnO film can be grown below 200℃ in an atomic layer deposition system, and can be applied to transparent and flexible UV PDs with very fast response time and high photocurrent.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
• /
• pp.207-207
• /
• 2008

ZnO is one of the widely utilized n-type semiconducting oxide materials in the field of optoelectronic devices. For its application to the fabrication of promising ultraviolet (UV) photodetectors, ZnO with various structures has been extensively studied. However, study on the photodetectors using zero-dimensional (0-D) ZnO nanoparticle is scarce while the 0-D nanoparticle structure has many advantages compared to the other dimensional structures for absorption of light. In this study, the photocurrent characteristics of ZnO nanoparticles were investigated through a simply pasting of the nanoparticles across the pre-patterned electrodes. Then the photoluminescence (PL) characteristic, photocurrent response spectrum, photo- and dark-current and photoresponse spectrum were investigated with a He-Cd laser and an Xe lamp. An dominant PL peak of the ZnO nanoparticles was located at the wavelength of 380 nm under the illumination of 325-nm wavelength light. The ratio of photocurrent to dark current (on/off ratio) is as high as 106 which is considerable value for promising photodetectors. On the other hand, the time constants in photoresponse were relatively slow. The reasons of the high on/off ratio and relatively slow photoresponse characteristic will be discussed.

• 한국재료학회:학술대회논문집
• /
• 한국재료학회 2010년도 춘계학술발표대회
• /
• pp.12.1-12.1
• /
• 2010

We have developed a facile method to position different dyes (N719 and N749) sequentially in a mesoporous TiO2 layer through selective desorption and adsorption processes. Only upper part of the first adsorbed N719 dye was selectively removed by the desorption solution formulated with polypropylene glycol and tetrabutylammonium hydroxide without any damages of the dye. The desorption depth was controlled by the number of desorption process. Multi-dyed dye-sensitized solar cells (MDSSC) were fabricated by utilizing the method and their photovoltaic properties were investigated. From the incident photon-to-current conversion efficiency (IPCE) measurement, it was found that the MDSSC exhibited the extended spectral response for the solar spectrum while without decrease of maximum IPCE value compare to the DSSCs using one kind of dye (N719 or N749). The highest photocurrent density of 19.3 mA/cm2 was obtained from the MDSSC utilizing $15\;{\mu}m$ N719 / $14\;{\mu}m$ N749 bi-layered mesoporous TiO2 film. The photocurrent density was 25% and 8% higher than that of the DSSC using only N719 and N749 dye as a sensitizer, respectively. The power conversion efficiency of 9.8% was achieved from the MDSSC under the AM 1.5G one sun illumination.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
• /
• pp.134-135
• /
• 2006

$AgInS_2$ single crystal thin filmsl was deposited on throughly etched semi-insulator GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were $680^{\circ}C$ and $410^{\circ}C$ respectively, and the thickness of the single crystal thin films is $6{\mu}m$. From the photocurrent spectrum by illumination of perpendicular light on the c-axis of the $AgInS_2$ single crystal thin film, we have found that the values of spin orbit coupling ${\Delta}So$ and the crystal field splitting ${\Delta}Cr$ were 0.0098 eV and 0.15 eV at 10 K, respectively. In order to explore the applicability as a photoconductive cell, we measured the sensitivity ($\gamma$), the ratio of photocurrent to darkcurrent (pc/dc), maximum allowable power dissipation (MAPD), spectral response and response time. The result indicated that the samples annealed in S vapour the photoconductive characteristics are best. Therefore we obtained the sensitivity of 0.98, the value of pc/dc of $1.02{\times}10^6$, the MAPD of 312 mW, and the rise and decay time of 10.4ms and 10.8ms respectively.

• Current Applied Physics
• /
• 제18권11호
• /
• pp.1306-1312
• /
• 2018

The Mn-doped copper nitride ($Cu_3N$) films with Mn concentration of 2.0 at. % have high crystallinity and uniform surface morphology. We found that the as-synthesized Mn-doped $Cu_3N$ films show suitable optical absorption in the visible region and the band gap is ~1.48 eV. A simple photodetector based on Mn doped $Cu_3N$ films was firstly fabricated via magnetron sputtering method. The fabricated device with doping of Mn demonstrated high photocurrent response and fast response shorter than 0.1 s both for rise and decay time superior to the pure $Cu_3N$. Furthermore, the energy levels of Mn-doped Cu3N matched well with ITO and Ag electrode. The excellent photoelectric properties reflect a good balance between sensitivities and response rate. Our investigation reveals the excellent potential of Mn-doped $Cu_3N$ films for application of photodetectors.

• 한국표면공학회지
• /
• 제32권4호
• /
• pp.538-546
• /
• 1999

Ti(IV)-Fe(III) oxide films were formed by MOCVD technique, and their photoelectrochemical properties were examined in 0.5M N $a_2$$SO_4$ solution by a photoelectrochemical polarization test. Ti(IV)-Fe(III) oxide films deposited at 40$0^{\circ}C$ by MOCVD have crystalline structure and are all n-type semiconductors. The photocurrent and the quantum efficiency of the films increase with increasing the iron cationic fraction ($X_{Fe}$ ) in the films. The energy band gap of the films increase linearly with increasing the iron cationic fraction in the films. Ti(IV)-Fe(III) oxide film of $X_{Fe}$ /=0.60 has high photocurrent response and corrosion resistance simultaneously.