• 전기의세계
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• 제17권2호
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• pp.16-26
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• 1968

Cds is possible to add excess donors and to compensate partially using other group metals as acceptors. The impurities can ble incorporated either during crysta growth or by diffusion into a bulkcrystal. The addition of rimpurities leads also to the production of vacancies in a manner depending on the atmosphere surrounding the crystal during growth, during the diffusion process or using bulk. Cds of the mentioned above affects spectral sensitivity, speed of response, the variation on photocurrent, electron life time, and decay of photoconductivity with temperature and with intensity of illumination. In the work to be deseribed, these properties have been studied between liquid nitrogen and room temperature. In addition, the electron trap distribution has been correlated with speed of response, variation of photocurrent with temperature in various atmosphere. Four major trapping levels have been observed, and their identification with impurity and vacancy levels is discussed. And also the effects of lattice imperfections on the photoconductive properties CdS were investigated in detail.

• 한국염색가공학회지
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• 제18권5호
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• pp.53-60
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• 2006

The 1,3-bis(4-aminoaryl)squaraines showed color, change behavior, they were found to undergo reduction with sodium borohydride in solution to give colorless leuco compounds, which oxidized readily in air back to the colored squaraine dye. We have shown that initial observations indicated that the derivatives synthesized gave new donor-acceptor chromophores. It is also interesting to note than the oxidation of the leuco squaraines did initially produce a species absorbing about 630-680 wavelengths. The 1,3-squaraines have found many uses as near-infrared absorbers, laser dyes and photoconductive materials. Furthermore their color-change redox behavior has potential in the area of peroxidase-based bioassaysas oxidation sensitive indicator systems were investigated.

• 한국산학기술학회논문지
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• 제11권10호
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• pp.3893-3897
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• 2010

LBP 현상기 롤러는 시간이 지나면 자기력과 자화 특성이 감소하게 되며 이런 자성체 감소로 인해 인쇄 품질이 떨어진다. 본 연구에서는 재활용에 따른 현상기 롤러의 자성 분포를 조사하여 신제품과 비교함으로써 재활용의 사용 가능성 및 자성체의 경시 변화에 대해 제한하였다.

• JSTS:Journal of Semiconductor Technology and Science
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• 제6권3호
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• pp.210-224
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• 2006

A new analytical model for the static I-V characteristics of GaAs MESFET’s under optically controlled conditions in both linear and saturation region is presented in this paper. The novelty of the model lies in characterizing both photovoltaic (external, internal) and photoconductive effects. Deep level traps in the semi insulating GaAs substrate are also included in this model. Finally, effect of backgate voltage on I-V characteristics is explained analytically for the first time in literature. Small signal parameters of GaAs MESFET are derived under both dark and illuminated conditions. Some of the results are compared with reported experimental results to show the validity of the proposed model. Since accurate dc modeling is the key to accurate ac modeling, this model is very useful in the designing of photonic MMIC’s and OEIC’s using GaAs MESFET.

• 전자공학회논문지A
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• 제32A권3호
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• pp.124-133
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• 1995

A theoretical self-consistent thermoelectric model has been developed for optimal thermal design in the self-signal processing infraed detectors. The model is achived by employing the coupled thermoelectric equation which allows which allows the simultaneous investigation of the termal and electrical aspects of device behavior. The thermal limitation of detectivity and responsivity are determined by the enegy gap, carrier concentration, lifetime, and mobility as a function of the temperature. The calculated results indicate that the detectivity is decreased at bias fields above about 50 V/cm, because the performence is limiting by temperature when the bias voltage reached the level associated with Joule heating. It has been also found that the improvement in the mid-band modulation transfer function(MTF) may be restricted by increasing the bias fields. Further, the important paramerers in the thermal optimization of SPIR detector, such as temperature in the device, ambipolar velocity, element thickness and length, are also considered. The analytical study provides a mathematical basis for optimal design of such a photoconductive IR detector and the agreement between the experimental and theoretical results are seen to be good.

• Journal of the Optical Society of Korea
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• 제20권3호
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• pp.435-440
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• 2016

We developed a simple and real-time readout autocorrelator for several tens and sub-10fs pulses, based on the two photon absorption phenomena of a commercial GaP photodetector including a transimpedance amplifier. With a suitable gain adjustment, we demonstrated that the interferometric autocorrelation for sub-nJ pulses delivered as a high output voltage as to resolve all fringes in an autocorrelation trace with features of low noise and a low offset voltage. By fitting the measured quadratic power dependence of output voltages, we obtained the quantum efficiency of TPA for the GaP detector comparable with those of a GaAsP diode and an SHG with a thin BBO crystal. The autocorrelator of a TPA based GaP photodetector is highly suitable for sensitively measuring a few cycle pulses with a broad spectral distribution from 600 nm to 1100 nm.

• Nuclear Engineering and Technology
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• 제29권6호
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• pp.468-475
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• 1997

The transient photocurrent in amorphous silicon radiation detectors (n-i-n and forward biased p-i-n) were analyzed. The transient photocurrents in these devices could be modeled using multiple trap levels in the forbidden gap. Using this model the rise and decay shapes of the photocurrents could be fitted. The decaying photocurrent shapes of the p-i-n and n-i-n devices after a short duration of light pulse showed a similar behavior at low dark current density levels, but at higher dark current density levels the photocurrent of the p-i-n diode decayed faster than that of the n-i-n, which could be explained by the decreased electron lifetimes in the forward biased p-i-n diode at high dark current densities. The transient photoconductive gain behaviors in the amorphous silicon radiation detectors are discussed in terms of device configuration, dark current density and time scale.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2006년도 하계종합학술대회
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• pp.181-182
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• 2006

Photoconductive three-wire folded dipole antennas for terahertz photomixers have been developed. The folded antennas are characterized by a free space time-domain measurement technique, and the measured data are in good agreement with the simulation results. The folded dipole antennas have much higher antenna resistance than other resonant dipole antennas, implying that they can be used for higher output power of THz photomixers.

• Bulletin of the Korean Chemical Society
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• 제30권1호
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• pp.97-101
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• 2009

A new approach was applied to examine the charge generation and transport in organic photoconductive devices by Monte‐Carlo simulation utilizing multiple site interactions of carriers with all other charges within Coulomb radius. Stepwise generation frame was considered first by a charge separation process that was counted in two separate transactions, i.e., hopping against physical decay and dissociation against recombination. Thereafter, diffusion/ drifting process of free carriers was counted to follow. This method enables to examine readily the photocurrent generated alongside the charge generation efficiency. The field and temperature dependences of the efficiency and photocurrent were obtained comparable to Onsager’s and experimental data.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1987년도 전기.전자공학 학술대회 논문집(I)
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• pp.505-508
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• 1987

The structure of vacuum evaporated PbO films is investigated. Also, the Photosensitivity and dark resistivity are measured. The dominant structure and orientation of these films were red (tetragonal) form, and <110> and <101> direction under- the suitable deposition conditions. And the crystallite size of them was about $2um{\times}0.2um$. These PbO films have good photosensitivity(r=0.9) and high dark resistivity. (${\rho}=10^{14}{\Omega}{\cdot}cm$)