• E2M - 전기 전자와 첨단 소재
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• 제7권2호
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• pp.94-99
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• 1994

The purpose of this work is to investigate the interface characteristics of hydrogenated amorphous silicon thin films prepared by PECVD and photo-induced CVD and to examine the annealing effects of ultraviolet irradiation on hydrogenated amorphous silicon thin films which were degraded by visible light illumination. The interface layer thickness of films deposited by photo-induced CVD was about 600-900.angs. while that by PECVD was about 1000-1300.angs.. These results can show that the quality of interface layer in photo induced CVD film is better than that in PECVD sample. The electrical properties are improved by ultraviolet irradiation on visible light soaked a-Si:H films using photo-CVD light sources, probably due to the fact that UV generates phonons in a-Si:H films and anneal the meta stable defects.

• 대한전자공학회논문지
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• 제26권7호
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• pp.73-82
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• 1989

실리콘계 절연박막 형성을 위한 저온공정을 개발하기 위하여 photo-CVD장치를 제작하여 $SiO_2$ 박막을 $50{\sim}250^{\circ}C$ 범위에서 증착시켰다. 이때 $SiH_4/N_2O$ 혼합가스는 수은증감반응법을 사용하지 않고 저압수은램프의 직접 광여기에 의해 분해시켰다. AES와 ESCA 분석결과 Si와 O의 화학량론적 구성이 거의 모든 공정조건에서 1:2로 나타났고, Si와 O원자의 결합상태가 $SiO_2$의 형태로 이루어져 있음을 보여주었다. 그리고 박막의 굴절율은 $1.39{\sim}1.44$의 범위로 나타나, 저온증착에 의해 밀도가 비교적 낮은 박막이 형성됨을 보였다.

• 한국결정성장학회지
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• 제9권3호
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• pp.289-294
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• 1999

The charged clusters or particles, which contain hundreds to thousands of atoms or even more, are suggested to from in the gas phase in the thin film processes such as CVD, thermal evaporation, laser ablation, and flame deposition. All of these processes are also phase synthesis of the nanoparticels. Ion-induced or photo-induced nucleation is the main mechanism for the formation of these nanoclusters or nanoparticles in the gas phase. Charge clusters can make a dense film because of its self-organizing characteristics while neutral ones make a porous skeletal structure because of its Brownian coagulation. The charged cluster model can successfully explain the unusual phenomenon of simultaneous deposition and etching taking place in diamond and silicon CVD processes. It also provides a new interpretation on the selective deposition on a conducting material in the CVD process. The epitaxial sticking of the charged clusters on the growing surface is getting difficult as the cluster size increases, resulting in the nanostructure such as cauliflower or granular structures.

• 한국결정성장학회:학술대회논문집
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• 한국결정성장학회 1999년도 PROCEEDINGS OF 99 INTERNATIONAL CONFERENCE OF THE KACG AND 6TH KOREA·JAPAN EMG SYMPOSIUM (ELECTRONIC MATERIALS GROWTH SYMPOSIUM), HANYANG UNIVERSITY, SEOUL, 06월 09일 JUNE 1999
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• pp.115-127
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• 1999

The charged clusters or particles, which contain hundreds to thousands of atoms or even more, are suggested to form in the gas phase in the thin film processes such as CVD, thermal evaporation, laser ablation, and flame deposition. All of these processes are also used in the gas phase synthesis of the nanoparticles. Ion-induced or photo-induced nucleation is the main mechanism for the formation of these nanoclusters or nanoparticles inthe gas phase. Charged clusters can make a dense film because of its self-organizing characteristics while neutral ones make a porous skeletal structure because of its Brownian coagulation. The charged cluster model can successfully explain the unusual phenomenon of simultaneous deposition and etching taking place in diamond and silicon CVD processes. It also provides a new interpretation on the selective deposition on a conducting material in the CVDd process. The epitaxial sticking of the charged clusters on the growing surface is gettign difficult as the cluster size increases, resulting in the nanostructure such as cauliflowr or granular structures.