• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1995.11a
• /
• pp.281-284
• /
• 1995

A molecular photodiode was fabricated with hetero-Langmuir-Blodgett (LB) film consisting of an electron accepter(A) and sensitizer. N-Allyl-N-[3-propylamido-N\",N\"-야(n-octadecyl)]-4,4-bipyridum Dibromide and 7,8-dimethyl-10-dodecyl isoalloxan-zine were used as A and S units, respectively. By aligning hefter-LB film of A/S units on ITO glass with an aluminium thin film, a molecular photodiode with the structure of Metal/Insulator/Metal(MIM) was constructed. Due to excitation by irradiation with a 460nm monochromatic light source, the photo-induced unidirectional flow of electrons in the MIM device could be achieved and was detected as photocurrents. The direction of energy flow was in accordance with the energy level profile across the LB films. The photo switching function was achieved and the rectifying characteristics was obserbed in the molecular devise.

• Transactions on Electrical and Electronic Materials
• /
• v.8 no.3
• /
• pp.135-138
• /
• 2007

In this study, we investigated the electro-optical (EO) characteristic of fringe-field switching (FFS) mode cell by the two kinds of ultraviolet (UV) alignment method on the organic thin film (polyimide: PI). The suitable organic layers for FFS cell and the aligning capabilities of nematic liquid crystal (NLC) using the in-situ photoalignment method were studied; Disclination is observed after conventional photoalignment method for 1h, and in-situ photoalignment method for 1h. Monodomain alignment of the NLC can be observed via insitu photo alignment method for 2 h and 3 h. It is considered that NLC alignment is due to photo-depolymerization of the polymer with oblique non-polarized UV irradiation on PI surface. An unstable V-T curve of UV-aligned FFS-LCD with conventional photoalignment method can be achieved. However, a stable V-T curve of UV-aligned FFS-LCD with in-situ photoalignment method (1 h), and V-T curve of UV-aligned FFS-LCD with in-situ photo alignment method was much stable comparing with that of other UV-aligned FFSLCD's. As a result, more stable EO performance of UV-aligned FFS-LCD with in-situ photoalignment method for 3h is obtained than that of the other UV-aligned FFS-LCD's.

• Proceedings of the KIEE Conference
• /
• 2001.11a
• /
• pp.121-123
• /
• 2001

We synthesized dendrimers containing light switchable units such as azobenzene group at the air/water interface. Their chemical structure was verified by using NMR study and UV spectroscopy. We firstly investigated the monolayer behavior and by light irradiation using $\pi$-A isotherm at the air/water interface. As a result, the monolayer of dendrimer with azobenzene group showed the reversible photo-switching behavior by the isomerization of azobenzene group in their periphery. This suggests that optical behavior and morphological change are affected by the functional group and the symmetric chain.

• Proceedings of the KIPE Conference
• /
• 2003.07b
• /
• pp.511-515
• /
• 2003

This paper presents a novel prototype of the utility-interfaced sinusoidal pulse width modulated (SPWM) inverter using the high-frequency flyback transformer fur the small-scale solar photo-voltaic power conditioner (1kW - 4kW). The proposed SPWM power conditioner circuit with a high-frequency link has a function of electrical isolation, which is vital fur solar photovoltaic power conditioner systems with the viewpoint of safety and convenience. The discontinuous conduction mode (DCM) operation of the flyback transformer is also maintained to simplify the topology of the inverter circuit and control scheme. First, the operating principle of the proposed circuit is described far the understanding of the circuit parameters establishment. Then, the digitally constructed SPWM control scheme is presented. The proposed circuit is verified by the computer simulation and the prototype experiment.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.36 no.2
• /
• pp.143-150
• /
• 2023

Underwater wireless communication is a challenging issue for realizing the smart aqua-farm and various marine activities for exploring the ocean and environmental monitoring. In comparison to acoustic and radio frequency technologies, the visible light communication is the most promising method to transmit data with a higher speed in complex underwater environments. To send data at a speedier rate, high-performance photodetectors are essentially required to receive blue and/or cyan-blue light that are transmitted from the light sources in a light-fidelity (Li-Fi) system. Here, we fabricated high-performance organic phototransistors (OPTs) based on P-type donor polymer (PTO2) and N-type acceptor small molecule (IT-4F) blend semiconductors. Bulk-heterojunction (BHJ) PTO2:IT-4F photo-active layer has a broad absorption spectrum in the range of 450~550 nm wavelength. Solution-processed OPTs showed a high photo-responsivity >1,000 mA/W, a large photo-sensitivity >10³, a fast response time, and reproducible light-On/Off switching characteristics even under a weak incident light. BHJ organic semiconductors absorbed photons and generated excitons, and efficiently dissociated to electron and hole carriers at the donor-acceptor interface. Printed and flexible OPTs can be widely used as Li-Fi receivers and image sensors for underwater communication and underwater internet of things (UIoTs).

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.08a
• /
• pp.343-344
• /
• 2012

It has been known since the mid 1960s that Ag can be photodissolved in chalcogenide glasses to form materials with interesting technological properties. In the 40 years since, this effect has been used in diverse applications such as the fabrication of relief images in optical elements, micro photolithographic schemes, and for direct imaging by photoinduced Ag surface deposition. ReRAM, also known as conductive bridging RAM (CBRAM), is a resistive switching memory based on non-volatile formation and dissolution of a conductive filament in a solid electrolyte. Especially, Ag-doped chalcogenide glasses and thin films have become attractive materials for fundamental research of their structure, properties, and preparation. Ag-doped chalcogenide glasses have been used in the formation of solid electrolyte which is the active medium in ReRAM devices. In this paper, we investigated the nature of thin films formed by the photo-dissolution of Ag into Ge-Se glasses for use in ReRAM devices. These devices rely on ion transport in the film so produced to create electrically programmable resistance states. [1-3] We have demonstrated functionalities of Ag doped chalcogenide glasses based on their capabilities as solid electrolytes. Formation of such amorphous systems by the introduction of Ag+ ions photo-induced diffusion in thin chalcogenide films is considered. The influence of Ag+ ions is regarded in terms of diffusion kinetics and Ag saturation is related to the composition of the hosting material. Saturated Ag+ ions have been used in the formation of conductive filaments at the solid electrolyte which is the active medium in ReRAM devices. Following fabrication, the cell displays a metal-insulator-metal structure. We measured the I-V characteristics of a cell, similar results were obtained with different via sizes, due to the filamentary nature of resistance switching in ReRAM cell. As the voltage is swept from 0 V to a positive top electrode voltage, the device switches from a high resistive to a low resistive, or set. The low conducting, or reset, state can be restored by means of a negative voltage sweep where the switch-off of the device usually occurs.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2003.07b
• /
• pp.904-907
• /
• 2003

We synthesized dendrimers containing light switchable units, azobenzene group. To apply to the molecular level devices or data storage system using Langmuir-Blodgett(LB) film, we firstly investigated the monolayer behavior using the surface pressure-area(${\pi}-A$) isotherms at air-water interface. And then the surface pressure shift of monolayer by light irradiation was also measured to the dendrimer with azobezene group. As a result, the monolayer of dendrimer with azobenzene group showed the reversible photo-switching behavior by the isomerization of azobenzene group in their periphery. This results suggest that the dendrimers with azobenzene group can be applied to high efficient nano-device of molecular level. And we measured the electrical properties by MIM and STM. The dendrimer with azobenzene group compared trans form and cis form at electrical properties.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.7 no.3
• /
• pp.196-208
• /
• 2007

An analytical model is proposed for an optically controlled Metal Semiconductor Field Effect Transistor (MESFET), known as Optical Field Effect Transistor (OPFET) considering the diffusion fabrication process. The electrical parameters such as threshold voltage, drain-source current, gate capacitances and switching response have been determined for the dark and various illuminated conditions. The Photovoltaic effect due to photogenerated carriers under illumination is shown to modulate the channel cross-section, which in turn significantly changes the threshold voltage, drainsource current, the gate capacitances and the device switching speed. The threshold voltage $V_T$ is reduced under optical illumination condition, which leads the device to change the device property from enhancement mode to depletion mode depending on photon impurity flux density. The resulting I-V characteristics show that the drain-source current IDS for different gate-source voltage $V_{gs}$ is significantly increased with optical illumination for photon flux densities of ${\Phi}=10^{15}\;and\;10^{17}/cm^2s$ compared to the dark condition. Further more, the drain-source current as a function of drain-source voltage $V_{DS}$ is evaluated to find the I-V characteristics for various pinch-off voltages $V_P$ for optimization of impurity flux density $Q_{Diff}$ by diffusion process. The resulting I-V characteristics also show that the diffusion process introduces less process-induced damage compared to ion implantation, which suffers from current reduction due to a large number of defects introduced by the ion implantation process. Further the results show significant increase in gate-source capacitance $C_{gs}$ and gate-drain capacitance $C_{gd}$ for optical illuminations, where the photo-induced voltage has a significant role on gate capacitances. The switching time ${\tau}$ of the OPFET device is computed for dark and illumination conditions. The switching time ${\tau}$ is greatly reduced by optical illumination and is also a function of device active layer thickness and corresponding impurity flux density $Q_{Diff}$. Thus it is shown that the diffusion process shows great potential for improvement of optoelectronic devices in quantum efficiency and other performance areas.

• Proceedings of the KIEE Conference
• /
• 2007.10c
• /
• pp.250-252
• /
• 2007

본 논문에서는 Multi-stage Electro-magnetic Launcher(EML)를 개발함에 있어, Photo Sensor Switching System을 구성하여 Reluctance type의 2-Stage Coilgun을 설계, 제작하였다. 이를 위해, 솔레노이드 코일의 최적 aspect ratio와 발사체의 size를 F.E.M. 해석을 통해 결정하였고, 탄속측정기를 제작하여 실험을 통해 각 stage의 최적 시정수를 결정하였다.

• Bulletin of the Korean Chemical Society
• /
• v.35 no.3
• /
• pp.731-736
• /
• 2014

An organic junction transistor with a vertical structure based on an active layer of poly(3-hexylthiophene) was fabricated by facile micro-contact printing combined with the Langmuir-Schaefer technique, without conventional e-beam or photo-lithography. Direct printing and subsequent annealing of Au-nanoparticles provided control over the thickness of the Au electrode and hence control of the electrical contact between the Au electrode and the active layer, ohmic or Schottky. The junction showed similar current-voltage characteristics to an NPN-type transistor. Current through the emitter was simply controllable by the base voltage and a high transconductance of ~0.2 mS was obtained. This novel fabrication method can be applied to amplifying or fast switching organic devices.