• 제목/요약/키워드: Photo-electric properties

검색결과 32건 처리시간 0.032초

Photo-sensing Characteristics of VO2 Nanowires

  • Sohn, Ahrum;Kim, Eunah;Kim, Haeri;Kim, Dong-Wook
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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    • pp.197.1-197.1
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    • 2014
  • VO2 has intensively investigated for several decades due to its interesting physical properties, including metal-insulator transition (MIT), thermochromic and thermoelectric properties, near the room temperature. And also gas and photo sensing properties of VO2 nanowires have attracted increasing research interest due to the high sensitivity and multi-sensing capability. We studied the light-induced resistance change of VO2 nanowires. In particular, we have investigated plasmonic enhancement of the photo-sensing properties of the VO2 nanowires. To select proper wavelength, we performed finite-difference time-domain simulations of electric field distribution in the VO2 nanowires attached with Ag nanoparticles. Localized surface plasmon resonance (LSPR) is expected at wavelength of 560 nm. The photo-sensitivity was carefully examined as a function of the sample temperature. In the presentation, we will discuss physical origins of the photo-induced resistance change in VO2.

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Construction of a 2D Co(II) Coordination Polymer with (4,4)-Connected Topology: Synthesis, Crystal Structure, and Surface Photo-electric Property

  • Li, Jia-Ming
    • Bulletin of the Korean Chemical Society
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    • 제35권4호
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    • pp.1177-1181
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    • 2014
  • A 2D grid-like (4, 4)-connected topology coordination polymer, $[Co(BTA)_2(H_2O)_2]_n$ (1), where HBTA = 2-(1H-benzotriazol-1-yl)acetic acid, has been synthesized by hydrothermal method and characterized by single crystal X-ray diffraction, IR spectroscopy, elemental analysis and surface photovoltage spectroscopy (SPS). X-ray diffraction analyses indicated that 1 displays octahedral metal centers with secondary building units (SBUs) [$Co(BTA)_2(H_2O)_2$] bridged by the $BTA^-$ ligands. In the crystal, the 2D supramolecular architecture is further supported by $O-H{\cdots}O$, $O-H{\cdots}N$, $C-H{\cdots}O$ hydrogen bonds and ${\pi}{\cdots}{\pi}$ stacking interactions. The SPS of polymer 1 indicates that there are positive response bands in the range of 300-600 nm showing photo-electric conversion properties. There are good relationships between SPS and UV-Vis spectra.

새로운 광변색성 Spiroxazine색소의 합성과 특성 (Syntheses and Characterisitics of New Photochromic Spiroxazine Dyes)

  • 김성훈
    • 한국인쇄학회지
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    • 제12권1호
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    • pp.159-168
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    • 1994
  • The Aggregation State of thin vapor deposite Film made by Cyanine Dye were changed into Monomeric molecular state(M) and Dimeric Aggregation(D) at the acidic treatment, into reversible H-Aggregation (H) at alkalic gas or heat treatment. Photo-electric properties were higher H than D and M, this stats were effective in enhancing Photoelectric-conversion characteristic. Substitute group of Meso-Position being stronger electronic Donors, Electronic density is higher and Electric conductivity is enhanced, we confirmed Oscillator Strength calculated by PPP-Molecular Orbital Calculation and Absorption Spectra at solvent stats were agreed good.

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전하 트랩 및 주입 문제를 해결하기 위한 비정질 셀레늄 필름의 계면 특성 (Interfacial Properties of a-Se Thick Films to Solve Charge Trap and Injection Problems)

  • 조진욱;최장용;박창희;김재형;이형원;남상희;서대식
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 추계학술대회 논문집
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    • pp.497-500
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    • 2001
  • Due to their better photosensitivity in X-ray, the amorphous selenium based photoreceptor is widely used on the X-ray conversion materials. It was possible to control the charge carrier transport of amorphous selenium by suitably alloying a-Se with other elements(e,g. As, Cl). The charge transport properties of amorphous Selenium is decided on hole which is induced from metal to selenium in metal-selenium junction and which is transferred in a-Se bulk. This phenomenon is resulted of changing electric field owing to increasing of space charge by deep trap of a-Se bulk. In this paper, We dopped the chlorine to compensate deep hole trap and deposited blocking layer using dielectric material to prevent from increasing space charge for injection charge between metal electrode and a-Se layer. We compared space charge and the decreasing of trap density through measuring dark and photo current.

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SBN 박막의 배향도에 따른 초전특성 변화 (Pyroelectric Properties on the Orientation of SBN Thin Film)

  • 이채종;이희영;김정주;조상희
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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    • pp.366-367
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    • 2006
  • Different orientated SBN thin films were deposited by Ion Beam Sputtering, and electric properties were measured on each orientation. Ferroelectric $Sr_xBa_{1-x}Nb_2O_6$(SBN) has excellent electro-optic, photo-refractive, piezoelectric, pyroelectric properties. SBN thin film has been deposited by various method, of sol-gel, PLD, CVD, sputtering, etc.. To avoid lead pollution of Pb-system perovskite ferroelectric materials. SBN thin films were fabricated for pyroelectric IR sensor. Using the ceramic target of the same composition and Pt(100)/$TiO_2/SiO-2$/Si(100) substrate, crystallization and orientation behavior as well as electric properties of the films were examined. Seed layer and thin films thickness was controlled to observe the effect on preferred orientation. We measured I-V, C-V, P-E hysteresis to characterize electric-properties on each orientations.

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ε-Ga2O3 박막 성장 및 MSM UV photodetector의 전기광학적 특성 (Thin film growth of ε-Ga2O3 and photo-electric properties of MSM UV photodetectors)

  • 박상훈;이한솔;안형수;양민
    • 한국결정성장학회지
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    • 제29권4호
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    • pp.179-186
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    • 2019
  • 본 연구에서는 $Ga_2O_3$ 박막의 구조적 특성과 Ti/Au 전극을 증착하여 제작된 metal-semiconductor-metal (MSM) photodetector 소자의 광학적, 전기적 특성에 대해 연구하였다. 유기 금속 화학 증착법(metal organic chemical vapor deposition, MOCVD)을 이용해 서로 다른 온도에서 $Ga_2O_3$ 박막을 성장하였다. 성장온도에 따라 $Ga_2O_3$의 결정상이 ${\varepsilon}$-상에서 ${\beta}$-상으로 변화하는 것을 확인할 수 있었다. X-선 회절 분석(X-ray diffraction, XRD) 결과로 ${\varepsilon}-Ga_2O_3$의 결정구조를 확인하였고, 주사 전자 현미경(scanning electron microscopy, SEM) 이미지로 결정구조의 형성 메커니즘에 대해 논의하였다. 음극선 발광(Cathode luminescence, CL) 측정으로 $Ga_2O_3$의 발광성 천이에 관여하는 에너지 준위의 형성 원인에 대해 논의하였다. 제작된 MSM photodetector 소자의 외부 광에 대한 전류-전압 특성과 시간 의존성 on/off 광 응답 특성을 통해 ${\varepsilon}-Ga_2O_3$로 제작한 photodetector는 가시광보다 266 nm UV 파장 영역에서 훨씬 뛰어난 광전류 특성을 보이는 것을 확인하였다.

ZnO 반도체 나노선의 패턴 성장 및 전계방출 특성 (Patterned Growth of ZnO Semiconducting Nanowires and its Field Emission Properties)

  • 이용구;박재환;최영진;박재관
    • 한국세라믹학회지
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    • 제47권6호
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    • pp.623-626
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    • 2010
  • We synthesized ZnO nanowires patterned on Si substrate and investigated the field emission properties of the nanowires. Firstly, Au catalyst layers were fabricated on Si substrate by photo-lithography and lift-off process. The diameter of Au pattern was $50\;{\mu}m$ and the pattern was arrayed as $4{\times}4$. ZnO nanowires were grown on the Au catalyst pattern by the aid of Au liquid phase. The orientation of the ZnO nanowires was vertical on the whole. Sufficient brightness was obtained when the electric field was $5.4\;V/{\mu}m$ and the emission current was $5\;mA/cm^2$. The threshold electric field was $5.4\;V/{\mu}m$ in the $4{\times}4$ array of ZnO nanowires, which is quite lower than that of the nanowires grown on the flat Si substrate. The lower threshold electric field of the patterned ZnO nanowires could be attributed to their vertical orientation of the ZnO nanowires.

전하 트랩 및 주입 문제를 해결하기 위한 비정질 셀레늄 필름의 계면 특성 (Interfacial Properties of a-Se Thick Films to Solve Charge Trap and Injection Problems)

  • 조진욱;최장용;박창회;김재형;이형원;남상희;서대식
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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    • pp.497-500
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    • 2001
  • Due to their better photosensitivity in X-ray, the amorphous selenium based photoreceptor is widely used on the X-ray conversion materials. It was possible to control the charge carrier transport of amorphous selenium by suitably alloying a-Se with other elements(e.g. As, Cl). The charge transport properties of amorphous Selenium is decided on hole which is induced from metal to selenium in metal-selenium junction and which is transferred in a-Se bulk. This phenomenon is resulted of changing electric field owing to increasing of space charge by deep trap of a-Se bulk. In this paper, We dopped the chlorine to compensate deep hole trap and deposited blocking layer using dielectric material to prevent from increasing space charge for injection charge between metal electrode and a-Se layer. We compared space charge and the decreasing of trap density through measuring dark and photo current. 缀Ѐ㘰〻ሀ䝥湥牡氠瑥捨湯汯杹

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물분해용 Fe2O3/Na2Ti6O13/FTO 박막 제조 및 특성평가 (Fabrication and (Photo)Electrochemical Properties of Fe2O3/Na2Ti6O13/FTO Films for Water Splitting Process)

  • 윤강섭;구혜경;강우승;김선재
    • Corrosion Science and Technology
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    • 제11권2호
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    • pp.65-69
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    • 2012
  • One dimensional(1D) $Na_2Ti_6O_{13}$ nanorods with 70 nm in diameter was synthesized by a molten salt method. Using the synthesized nanorods, about 750 nm thick $Na_2Ti_6O_{13}$ film was coated on Fluorine-doped tin oxide(FTO) glasss substrate by the Layer-by-layer self-assembly(LBL-SA) method in which a repetitive self-assembling of ions containing an opposite electric charge in an aqueous solution was utilized. Using the Kubelka-Munk function, the band gap energy of the 1D-$Na_2Ti_6O_{13}$ nanorods was nalyzed to be 3.5 eV. On the other hand, the band gap energy of the $Na_2Ti_6O_{13}$ film coated on FTO was found to be a reduced value of 2.9 eV, resulting from the nano-scale and high porosity of the film processed by LBL-SA method, which was favorable for the photo absorption capability. A significant improvement of photocurrent and onset voltage was observed with the $Na_2Ti_6O_{13}$ film incorporated into the conventional $Fe_2O_3$ photoelectrode: the photocurrent increased from 0.25 to 0.82 mA/$cm^2$, the onset voltage decreased from 0.95 to 0.78 V.

UV Photo Response Driven by Pd Nano Particles on LaAlO3/SrTiO3 Using Ambient Control Kelvin Probe Force Microscopy

  • Kim, Haeri;Chan, Ngai Yui;Dai, Jiyan;Kim, Dong-Wook
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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    • pp.207.1-207.1
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    • 2014
  • High-mobility and two dimensional conduction at the interface between two band insulators, LaAlO3 (LAO) and SrTiO3 (STO), have attracted considerable research interest for both applications and fundamental understanding. Several groups have reported the photoconductivity of LAO/STO, which give us lots of potential development of optoelectronic applications using the oxide interface. Recently, a giant photo response of Pd nano particles/LAO/STO is observed in UV illumination compared with LAO/STO sample. These phenomena have been suggested that the correlation between the interface and the surface states significantly affect local charge modification and resulting electrical transport. Water and gas adsorption/desorption can alter the band alignment and surface workfunction. Therefore, characterizing and manipulating the electric charges in these materials (electrons and ions) are crucial for investigating the physics of metal oxide. Proposed mechanism do not well explain the experimental data in various ambient and there has been no quantitative work to confirm these mechanism. Here, we have investigated UV photo response in various ambient by performing transport and Kelvin probe force microscopy measurements simultaneously. We found that Pd nano particles on LAO can form Schottky contact, it cause interface carrier density and characteristics of persistence photo conductance depending on gas environment. Our studies will help to improve our understanding on the intriguing physical properties providing an important role in many enhanced light sensing and gas sensing applications as a catalytic material in different kinds of metal oxide systems.

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