• Journal of the Korea Institute of Information and Communication Engineering
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• v.22 no.1
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• pp.117-124
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• 2018

Junctionless amorphous InGaZnO thin film transistors with different film thickness have been fabricated. Their device performance parameters were extracted and gate oxide breakdown voltages were analyzed with different film thickness. The device performances were enhanced with increase of film thickness but the gate oxide breakdown voltages were decreased. The device performances were enhanced with increase of temperatures but the gate oxide breakdown voltages were decreased due to the increased drain current. The drain current under illumination was increased due to photo-excited electron-hole pair generation but the gate oxide breakdown voltages were decreased. The reason for decreased breakdown voltage with increase of film thickness, operation temperature and light intensity was due to the increased number of channel electrons and more injection into the gate oxide layer. One should decide the gate oxide thickness with considering the film thickness and operating temperature when one decides to replace the junctionless amorphous InGaZnO thin film transistors as BEOL transistors.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.11-11
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• 2007

1차원 구조체인 반도체 나노선은 앙자제한효과 (quantum confinement effect) 등을 이용하여 고밀도/고효율의 소자 개발이 기대되고 있다. GaN는 상온에서 3.4 eV의 밴드갭 에너지를 갖는 III-V 족 반도체 재료로써 박막의 경우 광전자 소자로 폭넓게 응용되고 있다. 최근 GaN 나노선의 합성에 성공하면서 발광소자, 고효율의 태양전지, HEMT 등으로의 응용을 위한 많은 연구가 활발히 이루어지고 있다. 하지만, 아직까지 GaN 나노선의 전기적 특성을 제어하는 기술은 확립되지 않고 있다. 본 연구에서는 Vapor solid (VS)법을 이용하여 GaN 나노선을 합성하였으며, GaN 분말과 함께 $Mg_2N_3$ 분말을 첨가하여 (Ga,Mg)N 나노선을 성공적으로 합성하였다. 합성시에 GaN와 Mg 소스간의 거리 변화를 통해 Mg 도핑농도를 제어하고자 하였다. 이 같은 방법으로 합 된 (Ga,Mg)N 나노선의 Mg 도핑농도에 따른 결정학적 특성을 알아보고, (Ga,Mg)N 나노선을 이용하여 소자를 제작한 후 그 전기적 특성을 살펴보고자 한다. X-ray diffraction (XRD)과 high-resolution transmission electron microscopy (HRTEM), EDX를 이용하여 합성된 나노선의 결정학적 특성과 Mg의 도핑 농도를 확인하였다. Photo lithography와 e-beam lithography법을 이용하여 (Ga,Mg)N 나노선 field-effect transistor (FET)를 제작하고, channel current-drain voltage ($I_{ds}-V_{ds}$) 와 channel current-gate voltage ($I_{ds}-V_g$) 측정을 통해 (Ga,Mg)N 나노선이 도핑 농도에 따라 n형에서 p형으로 전기적 특성이 변화함을 확인하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.244.1-244.1
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• 2013

The p-type GaN which act as a hole injection layer in GaN-based LEDs has fundamental problems. The first one arises from the difficulty in growing a highly doped p-GaN (with a carrier concentration exceeding ~1018 $cm^{-3}$). And the second one is the absence of appropriate metals or conducting oxides having a work function that is larger than that of p-type GaN (7.5 eV). Moreover, the LED efficiency is decreases gradually as the injection current increases (the so-called 'efficiency droop' phenomenon). The efficiency droop phenomenon in InGaN quantum wells (QWs) has been a large obstacle that has hindered high-efficiency operation at high current density. In this study, we introduce the new approaches to improve the light-output power of LEDs by using graphene oxide sheets. Graphene oxide has many functional groups such as the oxygen epoxide, the hydroxyl, and the carboxyl groups. Due to nature of such functional groups, graphene oxide possess a lot of hole carriers. If graphene oxide combine with LED top surface, graphene oxide may supply hole carriers to p-type GaN layer which has relatively low free carrier concentration less than electron concentration in n-type GaN layer. To prove the enhancement factor of graphene oxide coated LEDs, we have investigated electrical and optical properties by using ultra-violet photo-excited spectroscopy, confocal scanning electroluminescence microscopy.

• Applied Chemistry for Engineering
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• v.22 no.5
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• pp.545-550
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• 2011

We have synthesized a high electrically conductive 4-(2-(4-(acetylthio)phenyl)ethynyl)benzoic acid (APBA) with a conjugated aromatic structure as a bio fix linker, and then fabricated APBA self-assembled monolayer (SAM) with a self-assembly technique. The structure of the prepared APBA SAM was studied and electrochemical properties of APBA SAM immobilized with a ferrocene molecule were investigated. Also, we have examined the molecular orientation and oxidation-reduction redox characteristics of the mixed SAM consisting of APBA and butanethiol (BT) with a X-ray photo electron spectroscopy (XPS) and cyclicvoltammetry, respectively. Electrochemical activity of the mixed SAM was increased with increasing the mixed time. Especially, the maximum redox current was obtained at a mixed time of 36 hrs.

• Journal of the Korean Vacuum Society
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• v.15 no.2
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• pp.216-222
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• 2006

In this paper, we investigated the effect of hydrogen-plasma (H-plasma) treatment on the electrical and optical properties of a quantum dot infrared photodetector (QDIP) with a 5-stacked InAs dots in an InGaAs/GaAs well structure and $Al_{0.3}Ga_{0.7}As/GaAs$ SL (superlattice) current blocking layer. It has been observed that H-plasma treatment didn't affect the band structure of QDIP. It has been also observed that the H-plasma treatment on the QDIP not only enhance the electrical property of QDIP by curing the defect channels in $Al_{0.3}Ga_{0.7}As/GaAs$ SL but also introduce defects in QDIP structure. The H-plasma treatment for 10 min with 20 W of RF power provided the lowest dark current, which made it possible to measure the photo-current (PC) of QDIP whose PC was not detectable without the H-plasma treatment due to the high dark current.

• Journal of the Korean Vacuum Society
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• v.21 no.5
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• pp.264-272
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• 2012

In this paper, we report THz generation and detection characteristics investigated by InGaAs semiconductor epilayers, as results of a basic study obtained from the InGaAs-based THz transmitter/receiver (Tx/Rx). High-temperature and low-temperature (LT) grown InGaAs epilayers were prepared by the molecular beam epitaxy technique for the characterization of THz generation and detection, respectively, and the surface emission based on the photo-Dember effect was tried for THz generation. THz wave was generated by irradiation of a Ti:Sapphire fs pulse laser (60 ps/83 MHz), and a LT-GaAs Rx was used for the THz detection. The frequency band shown in the spectral amplitudes Fourier-transformed from the measured current signals was ranging in 0.5~2 THz, and the signal currents were exponentially increased with the Tx beam power. The THz detection characteristics of LT-InGaAs were investigated by using an Rx with dipole (5/20 ${\mu}m$) antenna, and the cutoff frequency was ~2 THz.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.10
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• pp.671-677
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• 2001

A RuO$_2$ Schottky photo-detector was designed and fabricated with GaN layers on the sapphire substrate. For good absorption of UV light, an epitaxial structure with undoped GaN(0.5 ${\mu}{\textrm}{m}$)/n￣-GaN(0.1${\mu}{\textrm}{m}$)/n＋-GaN(1.5${\mu}{\textrm}{m}$) was grown by MOCVD. The structure had the carrier concentrations of 3.8$\times$10$^{18}$ cm￣$^3$, the mobility of 283$\textrm{cm}^2$/V.s. After ECR etching process for mesa structure with the diameter of about 500${\mu}{\textrm}{m}$, Al ohmic contact was formed on GaN layer. After proper passivation between the contacts with Si$_3$/N$_4$, was formed on undoped GaN layer. The fabricated Schottky diode had a specific contact resistance of 1.15$\times$10$^{-5}$ ［$\Omega$.$\textrm{cm}^2$］. It has a low leakage current of 305 pA at -5 V, which was attributed by stable characteristics of RuO$_2$ Schottky contact. In optical measurement, it showed the high UV to visible extinction ratio of 10$^{5}$ and very high responsivity of 0.23 A/W at the wavelength of 365nm.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.40 no.7
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• pp.486-493
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• 2003

Schottky type A $l_{0.33}$G $a_{0.67}$N ultraviolet photodetectors were fabricated on the MOCVD grown AlGaN/ $n^{＋}$-GaN and AlGaN/AlGaN interlayer/ $n^{＋}$-GaN structures. The grown layers have the carrier concentrations of -$10^{18}$, and the mobilities were 236 and 269 $\textrm{cm}^2$/V.s, respectively. After mesa etching by ICP etching system, the Si3N4 layer was deposited for passivation between the contacts and Ti/AL/Ni/Au and Pt were deposited for ohmic and Schottky contact, respectively. The fabricated Pt/A $l_{0.33}$G $a_{0.67}$N Schottky diode revealed a leakage current of 1 nA for samples with interlayer and 0.1$\mu\textrm{A}$ for samples without interlayer at a reverse bias of -5 V. In optical measurement, the Pt/A $l_{0.33}$G $a_{0.67}$N diode with interlayer showed a cut-off wavelength of 300 nm, a prominent responsivity of 0.15 A/W at 280 nm and a UV-visible extinction ratio of 1.5x$10^4./TEX>.

• Journal of the Korean Applied Science and Technology
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• v.38 no.1
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• pp.107-117
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• 2021

The purpose of this study is to provide basic data for the development of UV protection products using natural materials. The research method is investigation and analyzation of the current status of the domestic and foreign industries, natural material research trends, and patent status of skin care-related sunscreen. As the result of the study, the U.S. market for sunscreen is the largest one, accounting for about 21% of the world, and the Chinese market is rapidly growing. The top four major types of functional cosmetics in Korea are complex functional products, followed by wrinkle improvement, sunscreen and whitening, and both the global and domestic markets continue to grow continuously. Over the past decade, research trends in natural sunscreen materials have shown that Scutellaria baicalensis, Humulus lupulus L., licorice, Finger root, Green tea, lespedeza cuneata extracts are effective, and in addition, they are also effective in photo-aging, antioxidant, anti-inflammatory, antibacterial, whitening, and wrinkle improvement. The patent registration status is on the rise and the ingredients were secured from plants and seaweeds. As the conclusion of this research, It is expected that natural UV protection material will be able to be used as multi-functional cosmetics material by developing safe and proven natural materials in line with future global trends.

• Restorative Dentistry and Endodontics
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• v.24 no.2
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• pp.299-309
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• 1999

The composite resin, due to its esthetic qualities, is considered the material of choice for restoration of anterior teeth. With respect to shade control, the direct-placement resin composites offer some distinct advantages over indirect restorative procedures. Visible-light-cured (VLC) composites allow dentists to match existing tooth shades or to create new shades and to evaluate them immediately at the time of restoration placement. Optimal intraoral color control can be achieved if optical changes occurring during application are minimized. An ideal VLC composite, then, would be one which is optically stable throughout the polymerization process. The shade guides of the resin composites are generally made of plastic, rather than the actual composite material, and do not accurately depict the true shade, translucency, or opacity of the resin composite after polymerization. So the numerous problems associated with these shade guides lead to varied and sometimes unpredictable results. The aim of this study was to assess the color changes of current resin composite restorative materials which occur as a result of the polymerization process and to compare the color differences between the shade guides provided with the products and the actual resin composites before- and after-polymerization. The results obtained from this investigation should provide the clinician with information which may aid in improved color match of esthetic restoration. Five light activated, resin-based materials (${\AE}$litefil, Amelogen Universal, Spectrum TPH VeridonFil-Photo, and Z100) and shade guides were used in this study. Three specimens of each material and shade combination were made. Each material was condensed inside a 1.5mm thick metal mold with 10mm diameter and pressed between glass plates. Each material was measured immediately before polymerization, and polymerized with Curing Light XL 3000 (3M Dental products, USA) visible light-activation unit for 60 seconds at each side. The specimens were then polished sequentially on wet sandpaper. Shade guides were ground with polishing stones and rubber points (Shofu) to a thickness of approximately 1.5mm. Color characteristics were performed with a spectrophotometer (CM-3500d, Minolta Co., LTD). A computer-controlled spectrophotometer was used to determine CIELAB coordinates ($L^*$, $a^*$ and $b^*$) of each specimen and shade guide. The CIELAB measurements made it possible to evaluate the amount of the color difference values (${\Delta}E{^*}ab$) of resin composites before the polymerization process and shade guides using the post-polishing color of the composite as a control, CIE standard D65 was used as the light source. The results were as follows. 1. Each of the resin composites evaluated showed significant color changes during light-curing process. All the resin composites evaluated except all the tested shades of 2100 showed unacceptable level of color changes (${\Delta}E{^*}ab$ greater than 3.3) between pre-polymerization and post-polishing state. 2. Color differences between most of the resin composites tested and their corresponding shade guides were acceptable but those between C2 shade of ${\AE}$litefil and IE shade of Amelogen Universal and their respective shade guides exceeded what is acceptable. 3. Comparison of the mean ${\Delta}E{^*}ab$ values of materials revealed that Z100 showed the least overall color change between pre-polymerization and post-polishing state followed by ${\AE}$litefil, VeridonFil-Photo, Spectrum TPH, and Amelogen Universal in the order of increasing change and Amelogen Universal. Spectrum TPH, 2100, VeridonFil-Photo and ${\AE}$litefil for the color differences between actual resin and shade guide. 4. In the clinical environment, the shade guide is the better choice than the shade of the actual resin before polymerization when matching colors. But, it is recommended that custom shade guides be made from resin material itself for better color matching.