• Bulletin of the Korean Chemical Society
• /
• v.34 no.4
• /
• pp.1137-1144
• /
• 2013

$TiO_2$ composites with seven different carbon materials (activated carbons, graphite, carbon fibers, single-walled carbon nanotubes, multi-walled carbon nanotubes, graphene oxides, and reduced graphene oxides) that are virgin or treated with nitric acid are prepared through an evaporation method. The photocatalytic activities of the as-prepared samples are evaluated in terms of $H_2$ production from aqueous methanol solution (photo-catalytic reduction: PCR) and degradation of aqueous pollutants (phenol, methylene blue, and rhodamine B) (photocatalytic oxidation: PCO) under AM 1.5-light irradiation. Despite varying effects depending on the kinds of carbon materials and their surface treatment, composites typically show enhanced PCR activity with maximum 50 times higher $H_2$ production as compared to bare $TiO_2$. Conversely, the carbon-induced synergy effects on PCO activities are insignificant for all three substrates. Colorimetric quantification of hydroxyl radicals supports the absence of carbon effects. However, platinum deposition on the binary composites displays the enhanced effect on both PCR and PCO reactions. These differing effects of carbon materials on PCR and PCO reactions of $TiO_2$ are discussed in terms of physicochemical properties of carbon materials, coupling states of $TiO_2$/carbon composites, interfacial charge transfers. Various surface characterizations of composites (UV-Vis diffuse reflectance, SEM, FTIR, surface area, electrical conductivity, and photoluminescence) are performed to gain insight on their photocatalytic redox behaviors.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2007.06a
• /
• pp.11-11
• /
• 2007

1차원 구조체인 반도체 나노선은 앙자제한효과 (quantum confinement effect) 등을 이용하여 고밀도/고효율의 소자 개발이 기대되고 있다. GaN는 상온에서 3.4 eV의 밴드갭 에너지를 갖는 III-V 족 반도체 재료로써 박막의 경우 광전자 소자로 폭넓게 응용되고 있다. 최근 GaN 나노선의 합성에 성공하면서 발광소자, 고효율의 태양전지, HEMT 등으로의 응용을 위한 많은 연구가 활발히 이루어지고 있다. 하지만, 아직까지 GaN 나노선의 전기적 특성을 제어하는 기술은 확립되지 않고 있다. 본 연구에서는 Vapor solid (VS)법을 이용하여 GaN 나노선을 합성하였으며, GaN 분말과 함께 $Mg_2N_3$ 분말을 첨가하여 (Ga,Mg)N 나노선을 성공적으로 합성하였다. 합성시에 GaN와 Mg 소스간의 거리 변화를 통해 Mg 도핑농도를 제어하고자 하였다. 이 같은 방법으로 합 된 (Ga,Mg)N 나노선의 Mg 도핑농도에 따른 결정학적 특성을 알아보고, (Ga,Mg)N 나노선을 이용하여 소자를 제작한 후 그 전기적 특성을 살펴보고자 한다. X-ray diffraction (XRD)과 high-resolution transmission electron microscopy (HRTEM), EDX를 이용하여 합성된 나노선의 결정학적 특성과 Mg의 도핑 농도를 확인하였다. Photo lithography와 e-beam lithography법을 이용하여 (Ga,Mg)N 나노선 field-effect transistor (FET)를 제작하고, channel current-drain voltage ($I_{ds}-V_{ds}$) 와 channel current-gate voltage ($I_{ds}-V_g$) 측정을 통해 (Ga,Mg)N 나노선이 도핑 농도에 따라 n형에서 p형으로 전기적 특성이 변화함을 확인하였다.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.02a
• /
• pp.480-480
• /
• 2010

In the present work, we studied effect of the deposition parameters on the structure and properties of ZnO films deposited by DC arc plasmatron. The varied parameters were gas flow rates, precursor composition, substrate temperature and post-deposition annealing temperature. Vapor of Zinc acetylacetone was used as source materials, oxygen was used as working gas and argon was used as the cathode protective gas and a transport gas for the vapor. The plasmatron power was varied in the range of 700-1,500 watts. Flow rate of the gases and substrate temperature rate were varied in the wide range to optimize the properties of the deposited coatings. After deposition films were annealed in the hydrogen atmosphere in the wide range of temperatures. Structure of coatings was investigated using XRD and SEM. Chemical composition was analyzed using x-ray photo-electron spectroscopy. Sheet conductivity was measured by 4-point probe method. Optical properties of the transparent ZnO-based coatings were studied by the spectroscopy. It was shown that deposition by a DC Arc plasmatron can be used for low-cost production of zinc oxide films with good optical and electrical properties. Sheet resistance of 4 Ohms cm was achieved after the deposition and 30 min annealing in the hydrogen at $350^{\circ}C$. Elevation of the substrate temperature during the deposition process up to $350^{\circ}C$ leads to decreasing of the film's resistance due to rearrangement of the crystalline structure.

• Composites Research
• /
• v.34 no.6
• /
• pp.434-439
• /
• 2021

Graphene and polyaniline with thermoelectric properties are one of the potential substitutes for inorganic materials for flexible thermoelectric applications. In this study, we studied the photo-induced thermoelectric effect of graphene-polyaniline composites. The graphene-polyaniline composites were synthesized by introducing an amine functional group to graphene oxide for covalently connecting graphene and polyaniline, reducing the graphene oxide, and then polymerizing the graphene oxide with aniline. Graphene-polyaniline composites were prepared by changing the aniline contents in order to expect an optimal photothermoelectric effect, and their structural properties were confirmed through FT-IR and Raman analysis. The photocurrent and photovoltage characteristics were analyzed by irradiating light asymmetrically without an external bias and the current and voltage with various aniline contents. While the photocurrent trends to the electrical conductivity of the graphene-polyaniline composites, the photovoltage was related to the temperature change of the graphene-polyaniline composite, which was converted into thermal energy by light.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2009.06a
• /
• pp.151-151
• /
• 2009

Recently, there has been increasing interest in amorphous oxide semiconductors to find alternative materials for an amorphous silicon or organic semiconductor layer as a channel in thin film transistors(TFTs) for transparent electronic devices owing to their high mobility and low photo-sensitivity. The fabriction of amorphous oxide-based TFTs at room temperature on plastic substrates is a key technology to realize transparent flexible electronics. Amorphous oxides allows for controllable conductivity, which permits it to be used both as a transparent semiconductor or conductor, and so to be used both as active and source/drain layers in TFTs. One of the materials that is being responsible for this revolution in the electronics is indium-zinc-tin oxide(IZTO). Since this is relatively new material, it is important to study the properties of room-temperature deposited IZTO thin films and exploration in a possible integration of the material in flexible TFT devices. In this research, we deposited IZTO thin films on polyethylene naphthalate substrate at room temperature by using magnetron sputtering system and investigated their properties. Furthermore, we revealed the fabrication and characteristics of top-gate-type transparent TFTs with IZTO layers, seen in Fig. 1. The experimental results show that by varying the oxygen flow rate during deposition, it can be prepared the IZTO thin films of two-types; One a conductive film that exhibits a resistivity of $2\times10^{-4}$ ohm${\cdot}$cm; the other, semiconductor film with a resistivity of 9 ohm${\cdot}$cm. The TFT devices with IZTO layers are optically transparent in visible region and operate in enhancement mode. The threshold voltage, field effect mobility, on-off current ratio, and sub-threshold slope of the TFT are -0.5 V, $7.2\;cm^2/Vs$, $\sim10^7$ and 0.2 V/decade, respectively. These results will contribute to applications of select TFT to transparent flexible electronics.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2006.06a
• /
• pp.154-154
• /
• 2006

Samsung Electro Mechanics ink jet has developed ultra high resolution alignment system. The alignment system has been developed for repeatable printing of conductive ink. The resolution of alignment system is 0.5um and the velocity of printing working plate is 1.5m/s. So far repeated printing results included sintering process have over 30um of drop mislocation data. In order to improve line thickness and conductivity of metal line, we need to develop the higher mechanical accurate align system. On the demand, this developed align system has under $1{\sim}2{\mu}m$ mispositioning performance and can measure of mechanical accuracy of inkjet printer, as well as the straightness of jetted drop from inkjet head. There is no kinds limit of substrate and ink to use SEM alignment system. By using this alignment system, we progress two experiment of reiterate printing drop and making conductive line on the glass and photo paper. Optical microscope and 3D profiler has been used for measurement of printed ink.

• Journal of the Korean Society of Radiology
• /
• v.13 no.6
• /
• pp.831-840
• /
• 2019

The X-ray detector by liquid crystal with front light was proposed and verified by a X-ray image. The proposed detector utilizes the visible light instead of the electric signal by transistor. Therefore, it shows low noise and can be fabricated at low cost. The liquid crystal detector uses the orientation change of the liquid crystal molecule by conductivity change of the photoconductive layer. We can get the X-ray image from the transmitted light through the liquid crystal. The X-ray dose was calibrated from the measured transmittance of the visible light after comparison to the reference transmittance curve of the liquid crystal. The amorphous Se was used for photo con ducting layer and parylene was used for the liquid crystal alignment instead of the conventional alignment layer which needs high-temperature process over 200℃. The proposed X-ray detector can decrease the X-ray dose by high sensitivity which was verified by simulation. After the fabrication of the X-ray detector, the X-ray image was obtained as a function of the bias voltage to the liquid crystal. 10 lines/mm resolution was obtained from the line pattern and we will apply it to the 17inch diagonal liquid crystal X-ray detector with 3π retardation.