• 제목/요약/키워드: Photo sensitive polyimide

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폴리이미드 용량형 습도센서의 전극 패턴에 따른 감습 특성 (Humidity Sensitive Characterization by Electrode Pattern on the Capacitive Humidity Sensor Using Polyimide)

  • 박성백;신훈규;임준우;장상목;권영수
    • 한국전기전자재료학회논문지
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    • 제27권9호
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    • pp.566-570
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    • 2014
  • Electrode pattern effects on the capacitive humidity sensor were investigated. The fabrication of the capacitive humidity sensor was formed with three steps. The bottom electrode was formed on the silicon substrate with Pt/Ti thin layer by using shadow mask and e-beam evaporator. The photo sensitive polyimide was formed on the bottom electrode by using photolithography process as a humidity sensitive thin film. The upper electrode was formed on the polyimide thin film with Pt/Ti thin layer by using e-beam evaporator and lift-off method. Three electrode patterns, such as circle, square, and triangle pattern, were used and changed the sizes to investigate the effects. The capacitances of the sensors were decreased 622 to 584 pF with the area decreament of patterns 250,000 to $196,250{\mu}m^2$. From these results, a capacitive humidity sensor with photo sensitive polyimide is expected to be applied to a high sensitive humidity sensor.

감광성 폴리이미드를 모울드로 이용한 기반층이 없는 선택적 금속 도금에 관한 기초 연구 (A Fundamental Study of Selective Metal Electroplating Without Seed Layers Using a Photosensitive Polyimide as Molds)

  • 안동섭;이상욱;김호성;김용권
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1993년도 정기총회 및 추계학술대회 논문집 학회본부
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    • pp.204-206
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    • 1993
  • In this paper we represented electroplating process without seed layers for making metal micro structures needed for applying terminal voltage for one-to-one cell fusion system. In this system, we need thick insulator and metal structures because the diameter of a cell is approximately $40{\mu}m$. So, we adopted the photo-sensitive polyimide as electroplating molds and structural material. Generally, the processes utilizing the photo-sensitive polyimide as molds have metal seed layers on the substrate as electroplating electrodes and requires wiring tasks to these seed layers. We proposed electroplating process without any seed layer on the Si-substrate and simulated P-N-P (electrode - Si substrate - electrode) junction on N-type silicon substrate. Leakage current from one metal structure to another which arise when terminal voltage is applied can be remarkably decreased by doping Boron in the region to be electroplated.

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